75GAL120DN2 [ETC]

IGBT Module ; IGBT模块\n


型号：	75GAL120DN2
厂家：	ETC
描述：	IGBT Module IGBT模块\n 双极性晶体管
文件：	总5页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSM 75 GAL 120 DN2

IGBT Power Module

• Single switch with chopper diode at collector

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 75 GAL 120 DN2

1200V 105A HALF BRIDGE GAL 1 C67076-A2011-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

105

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

210

150

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

625

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

Diode thermal resistance, chip case

Diode thermal resistance, chip-case,chopper

Insulation test voltage, t = 1min.

Creepage distance

≤ 0.2

≤ 0.5

K/W

thJC

THJC

≤

0.36

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Nov-24-1997

BSM 75 GAL 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Gate threshold voltage

GE(th)

= V

I = 2 mA

4.5

5.5

6.5

CE, C

Collector-emitter saturation voltage

CE(sat)

= 15 V, I = 75 A, T = 25 °C

2.5

3.1

= 15 V, I = 75 A, T = 125 °C

3.7

Zero gate voltage collector current

CES

= 1200 V, V = 0 V, T = 25 °C

1.4

= 1200 V, V = 0 V, T = 125 °C

Gate-emitter leakage current

= 20 V, V = 0 V

GES

400

AC Characteristics

Transconductance

= 20 V, I = 75 A

Input capacitance

= 25 V, V = 0 V, f = 1 MHz

iss

5.5

0.8

0.3

Output capacitance

= 25 V, V = 0 V, f = 1 MHz

oss

rss

Reverse transfer capacitance

= 25 V, V = 0 V, f = 1 MHz

Nov-24-1997

BSM 75 GAL 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Switching Characteristics, Inductive Load at T = 125 °C

Turn-on delay time

= 600 V, V = 15 V, I = 75 A

d(on)

Ω

= 15

Gon

Rise time

= 600 V, V = 15 V, I = 75 A

Ω

= 15

140

600

100

Gon

Turn-off delay time

= 600 V, V = -15 V, I = 75 A

d(off)

Ω

= 15

450

Goff

Fall time

= 600 V, V = -15 V, I = 75 A

= 15 Ω

Goff

Free-Wheel Diode

Diode forward voltage

I = 75 A, V = 0 V, T = 25 °C

2.5

I = 75 A, V = 0 V, T = 125 °C

1.8

Reverse recovery time

I = 75 A, V = -600 V, V = 0 V

µs

µC

di /dt = -900 A/µs, T = 125 °C

0.125

Reverse recovery charge

I = 75 A, V = -600 V, V = 0 V

di /dt = -900 A/µs

T = 25 °C

3.2

T = 125 °C

Nov-24-1997

BSM 75 GAL 120 DN2

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Chopper Diode

Chopper diode forward voltage

= 100 A, V = 0 V, T = 25 °C

2.5

= 100 A, V = 0 V, T = 125 °C

1.8

Reverse recovery time, chopper

= 100 A, V = -600 V, V = 0 V

µs

µC

rrC

di /dt = -1000 A/µs, T = 125 °C

0.125

Reverse recovery charge, chopper

= 100 A, V = -600 V, V = 0 V

rrC

di /dt = -1000 A/µs

T = 25 °C

T = 125 °C

Nov-24-1997

IGBT-Module

IGBT-Modules

%60ꢀꢁ*$/ꢂꢃꢄ'1ꢃꢅꢆꢅ%60ꢀꢁ*$5ꢂꢃꢄ'1ꢃ

Gehäusemaße / Schaltbild

Package outline / Circuit diagram

PIN 6 and 7

GAL type

only

PIN 4 and 5

GAR type

only

GAL type

GAR type

Update of Drawing Sep-21-98

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