75GD120DN2 [ETC]
IGBT Module ; IGBT模块\n
| 型号： | 75GD120DN2 |
| 厂家： | 
ETC |
| 描述： | IGBT Module
|
| 文件： | 总9页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSM 75 GD 120 DN2
IGBT Power Module
• Solderable Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
V
I
Package
Ordering Code
CE
C
BSM 75 GD 120 DN2
1200V 103A ECONOPACK 3
C67070-A2516-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1200
V
CE
CGR
R
= 20 kW
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
103
75
C
T = 80 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
206
150
C
T = 80 °C
C
Power dissipation per IGBT
P
W
tot
T = 25 °C
520
C
Chip temperature
T
T
+ 150
°C
j
Storage temperature
-40 ... + 125
stg
£
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
R
R
0.235
0.55
K/W
thJC
thJC
is
£
D
V
-
2500
16
Vac
mm
Clearance
-
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
F
sec
-
40 / 125 / 56
1
Oct-01-2003
BSM 75 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 3 mA
4.5
5.5
6.5
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 75 A, T = 25 °C
-
-
2.5
3.1
3
GE
GE
C
j
= 15 V, I = 75 A, T = 125 °C
3.7
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1200 V, V = 0 V, T = 25 °C
-
-
1
4
1.5
-
CE
CE
GE
j
= 1200 V, V = 0 V, T = 125 °C
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
320
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 75 A
31
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
nF
iss
V
-
-
-
5.1
0.72
0.38
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
GE
2
Oct-01-2003
BSM 75 GD 120 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 75 A
t
ns
d(on)
V
CC
GE
C
W
R
= 15
-
-
-
-
30
60
Gon
Rise time
= 600 V, V = 15 V, I = 75 A
t
r
V
CC
GE
C
W
R
= 15
70
140
600
100
Gon
Turn-off delay time
= 600 V, V = -15 V, I = 75 A
t
d(off)
V
CC
GE
C
W
R
= 15
450
70
Goff
Fall time
= 600 V, V = -15 V, I = 75 A
t
f
V
CC
GE
C
W
= 15
R
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 75 A, V = 0 V, T = 25 °C
-
-
2.3
1.8
2.8
-
F
GE
j
I = 75 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 75 A, V = -600 V, V = 0 V
t
µs
µC
rr
F
R
GE
di /dt = -900 A/µs, T = 125 °C
-
0.125
-
F
j
Reverse recovery charge
I = 75 A, V = -600 V, V = 0 V
Q
rr
F
R
GE
di /dt = -800 A/µs, T = 25 °C
F
j
di /dt = -800 A/µs, T = 125 °C
-
-
3.2
10
-
-
F
j
di /dt = -900 A/µs, T = 25 °C
F
j
3
Oct-01-2003
BSM 75 GD 120 DN2
Power dissipation
Safe operating area
I = ¦ (V
P
= ¦ (T )
)
CE
tot
C
C
parameter: T £ 150 °C
parameter: D = 0, T = 25°C , T £ 150 °C
C j
j
10 3
550
W
A
t
= 14.0µs
p
450
Ptot
IC
10 2
10 1
10 0
10 -1
400
350
300
250
200
150
100
100 µs
1 ms
10 ms
DC
50
0
0
20
40
60
80
100 120 °C
160
10 0
10 1
10 2
10 3
V
TC
VCE
Collector current
I = (T )
Transient thermal impedance IGBT
= (t )
Z
¦
¦
p
C
C
th JC
parameter: V
15 V , T 150 °C
parameter: D = t / T
³
£
GE
j
p
10 0
120
A
K/W
100
IC
ZthJC
10 -1
90
80
70
60
50
40
30
20
10 -2
D = 0.50
0.20
0.10
0.05
10 -3
single pulse
0.02
0.01
10
0
10 -4
0
20
40
60
80
100 120 °C
160
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
4
Oct-01-2003
BSM 75 GD 120 DN2
Typ. output characteristics
Typ. output characteristics
I = f (V
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p j
p
j
150
A
150
A
130
120
110
100
90
130
120
110
100
90
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
IC
IC
7V
7V
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
0
10
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
150
A
130
120
110
100
90
IC
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
V
VGE
14
5
Oct-01-2003
BSM 75 GD 120 DN2
Typ. capacitances
Typ. gate charge
C = f (V )
V
= ¦ (Q
)
CE
GE
Gate
parameter: I
= 75 A
parameter: V = 0 V, f = 1 MHz
C puls
GE
10 2
20
V
nF
16
C
VGE
600 V
800 V
14
12
10
8
10 1
Ciss
10 0
6
Coss
Crss
4
2
0
0
10 -1
100
200
300
400
nC
QGate
550
0
5
10
15
20
25
30
V
VCE
40
Reverse biased safe operating area
= f(V T = 150°C
Short circuit safe operating area
I = f(V ) , T = 150°C
Csc
I
)
,
Cpuls
CE
j
CE
j
parameter: VGE = 15 V
parameter: VGE = ± 15 V, tSC £ 10 µs, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
6
4
1.5
1.0
0.5
0.0
2
0
0
200 400 600 800 1000 1200
V
VCE
1600
0
200 400 600 800 1000 1200
V
VCE
1600
6
Oct-01-2003
BSM 75 GD 120 DN2
Typ. switching time
Typ. switching time
I = f (I ) , inductive load , T = 125°C
t = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 15
par.: V = 600V, I = 75 A
W
CE
10 4
GE
G
CE
C
10 4
ns
ns
t
t
tdoff
10 3
10 3
tdoff
tr
tdon
tr
10 2
10 2
tf
tf
tdon
10 1
10 1
0
20 40 60 80 100 120 140
A
IC
180
0
10
20
30
40
50
60
80
W
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 15 W
par.: V = 600V, V = ± 15 V, I = 75 A
CE
GE
G
CE
GE
C
40
40
Eon
mWs
30
mWs
30
E
E
Eon
Eoff
25
25
20
20
Eoff
15
15
10
10
5
0
5
0
0
20 40 60 80 100 120 140
A
IC
180
0
10
20
30
40
50
60
80
W
RG
7
Oct-01-2003
BSM 75 GD 120 DN2
Forward characteristics of fast recovery
Transient thermal impedance Diode
= ¦ (t )
reverse diode
I = f(V )
Z
F
F
th JC
p
parameter: D = t / T
parameter: T
p
j
10 0
150
A
K/W
130
IF
120
110
100
90
ZthJC
10 -1
Tj=125°C
Tj=25°C
80
10 -2
D = 0.50
0.20
70
60
0.10
50
0.05
40
10 -3
single pulse
0.02
30
0.01
20
10
0
10 -4
10 -5
0.0
0.5
1.0
1.5
2.0
V
3.0
10 -4
10 -3
10 -2
10 -1 s 10 0
VF
tp
8
Oct-01-2003
BSM 75 GD 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 300 g
9
Oct-01-2003
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