AB-057 [ETC]
AB-057 - COMPARISON OF NOISE PERFORMANCE BETWEEN A FET TRANSIMPEDANCE AMPLIFIER AND A SWITCHED INTEGRATOR ; AB - 057 - 间比较一个FET跨导放大器和噪声性能 - 开关集成商\n型号: | AB-057 |
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描述: | AB-057 - COMPARISON OF NOISE PERFORMANCE BETWEEN A FET TRANSIMPEDANCE AMPLIFIER AND A SWITCHED INTEGRATOR
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AP P LICATION BULLETIN
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COMPARISON OF NOISE PERFORMANCE BETWEEN A
FET TRANSIMPEDANCE AMPLIFIER AND A
SWITCHED INTEGRATOR
By Bonnie C. Baker
Low-input current FET operational amplifiers are univer-
sally used to monitor photodetector, or more commonly
photodiode currents. These photodetectors bridge the gap
(a)
200pF
REQ
between a physical event, light, and electronics. There are a
R3
R4
variety of amplifier configurations to select from and the
choice is based on noise, bandwidth, offset, and linearity.
The most popular design approach is shown in Figure 1. A
considerable amount has been written on the performance of
this traditional transimpedance amplifier. This topology has
dominated applications such as CT scanners, star-tracking
instruments, electron microscopes, etc., where a light-to-
voltage conversion is required.
10MΩ
10MΩ
100kΩ
IIN
R5
HP5082-4204
eO
OPA128
REQ = R3 + R4 + (R3R4/R5)
= 1000MΩ
To prevent gain peaking
C2
R2
1000MΩ
0.01µF
R2
(b)
+15V
Guard
A1 A2: 1/2 OPA2111
A1
IIN1
INA105
IIN
Output
OPA124
R2
R
R
(1)
(1)
CIN
RIN
50MΩ
25kΩ
25kΩ
IIN
–15V
eO
A3
D1
Circuit must be well shielded.
R2
R
R
NOTE: (1) RIN and CIN used to reduce DC and AC errors caused by input
bias currents, however, RIN also increases noise at the output by a factor
of √4KTRB times the noise gain of the circuit.
50MΩ
25kΩ
25kΩ
IIN2
FIGURE 1. Most Popular Design Approach to Gain Precise
Low Level Currents from a Photodetector.
A2
Until now, the only feasible solution to the high precision,
current-to-voltage design problem has been an op amp
network with a resistor in the feedback loop. Variations such
as using resistor T-networks or an instrumentation amplifier,
as shown in Figure 2, still use the fundamental concept of a
resistive feedback loop to perform the I/V conversion func-
tion. In these circuits, the fundamental transfer function is:
eO = (IIN1– IIN2)R2
REQ = R2
eO = 2 IINR2
REQ = 2R2
FIGURE 2 (a) Using a T-Network to Design the Feedback
Resistor for a Transimpedance Circuit.
(b) An Instrumentation Amplifier Topology Can
Be Used to Convert Low-Level Photodiode Cur-
rents to a Voltage Output.
©1993 Burr-Brown Corporation
AB-057A
Printed in U.S.A. January, 1994
VOUT = REQ • IIN,
(Signal)
IN
(Signal)
OUT
N
N
where VOUT = Output voltage
REQ = Equivalent resistive feedback element
IIN = Current generated by the photodetector
CA
CB
CC
CD
An alternative design method, a switched integrator, is
shown in Figure 3. With this topology, the capacitor in the
feedback loop of the amplifier dominates the transfer func-
tion. The switches perform the functions of removing the
excitation signal from the input of the amplifier (S1) and
resetting the output of the amplifier to ground (S2). The
fundamental transfer function of this circuit is:
Logic
V1
V2
CB and CD form a voltage divider. Output charge is due
to differences in CB and CD. Similar divider action on
input pin.
V1
V2
t
1
C2
VOUT = –
IIN dt,
∫
0
Charge Out
where VOUT = Output voltage
FIGURE 4.Topology Used for the Switches in the ACF2101
Switched Integrator to Reduce Charge Injection
Errors.
C2 = Capacitive feedback element
IIN = Current generated by the photodetector
The discrete design of the switched integrator is impractical
for low noise, precision applications because of the switch-
ing noise of S1 and S2. The switching noise is caused by the
injection of charge across the parasitic gate-to-source, gate-
to-drain, and source-to-drain capacitances of the FET
switches. The ACF2101 (block diagram shown in Figure 3)
implements the switched integrator design on a monolithic
chip and uses a charge injection cancellation design for S1
and S2 (see Figure 4) to reduce the switch contribution to DC
offset and noise.
parasitic capacitors CA, CB, CC and CD are carefully matched,
the total charge injection caused by switching at the SIG-
NAL IN node and the SIGNAL OUT node is zero.
The comparison of the noise performance of the traditional
resistor feedback transimpedance amplifier and the switched
integrator starts with the analysis of the input sensor, the
photodetector.
PHOTO DETECTOR CHARACTERISTICS
C2
Photodiodes generate low level currents that are propor-
tional to the level of illumination. An equivalent circuit for
the photodiode is shown in Figure 5. The value of the
junction capacitor, C1, can have a wide range of values
dependent of the diode junction area and bias voltage. A
value of 50pF at zero bias is typical for small area diodes.
The value of the shunt resistor, R1, is usually in the order of
108Ω at room temperature and decreases by a factor of two
every 10°C rise in temperature. The range of the shunt
resistor, R1, can be as high as 100GΩ and low as 10kΩ at
room temperature. There is no direct correlation between the
values of C1 and R1. C1 can usually be found in the product
data sheet of the photodiode. The value of R1 is not always
published by the manufacturer, however, its effect on noise
100pF
S2
Reset
IIN
1/2
S1
Hold
ACF2101
S3
Select
NOTE: S1: Hold Switch – When closed connects photodiode to the input of
the ACF2101 op amp. S2: Reset Switch – When closed discharges C2,
output goes to ground. S3: Select Switch – Used to multiplex several
ACF2101’s outputs.
RS < < RI
FIGURE 3.Block Diagram of 1/2 of the Dual ACF2101
Switched Integrator.
Incident
Light
As illustrated in Figure 4, when the LOGIC node changes
from low to high the voltage change (V1) across the capaci-
tors, CA and CB, pull charge out of the SIGNAL IN node and
SIGNAL OUT node. The inverted LOGIC signal at V2
pushes an equal amount of charge through CC and CD back
into the SIGNAL IN node and SIGNAL OUT node. If
IIN
RI
CI
Ideal
Diode
Photo
Current
≈ 10kΩ
to 100GΩ
FIGURE 5. Equivalent Circuit for a Photodiode.
2
in both the traditional transimpedance amplifier and the
switched integrator occur at lower frequencies. The overall
noise contribution in the lower frequencies is usually very
small compared to the contribution at higher frequencies,
therefore, knowing the exact value of R1 is not critical.
The first step in designing the transimpedance amplifier is
selecting the feedback resistor, R2. By knowing the maxi-
mum expected IIN, R2 is selected to optimize the signal-to-
noise ratio with the formula:
VOUT(max)
R2 =
,
IIN(max)
NOISE ANALYSIS OF TRADITIONAL
TRANSIMPEDANCE AMPLIFIER
where VOUT(max) = maximum output voltage
of the op amp
IIN(max) = maximum current from the
photodiode based on maximum
expected light intensity
For the noise comparison between the transimpedance am-
plifier and the switched integrator refer to Figure 6 for a
more complete circuit diagram. The optimum amplifier
would have infinite bandwidth, zero voltage noise, zero
input bias current, and zero offset voltage. The optimum
amplifier does not exist; however, several op amps come
close to meeting one or a few of these general requirements.
Table I summarizes key specifications of the FET amplifiers
OPA111, OPA124, OPA128, OPA404, OPA2111, OPA2107
and OPA627, which are usually used in transimpedance
applications.
Typical values for R2 would be between 10kΩ and 100MΩ.
It is possible that optimum noise performance can be ob-
tained with a VOUT(max) that is less than the full output swing
of the amplifier, in which case the above equations are not
applicable. The above equation is designed to optimize the
signal-to-noise ratio at the output of the amplifier.
C2
C2
R2
Equivalent Circuit for photodiode
IIN
R2
iN
en
C1
IIN
R1
R1
C1
OPA124
eO
eO
(a)
|A| (dB)
NOTE: In+ shorted in this configuration.
Open-Loop Gain of Op Amp
FIGURE 6.Complete Circuit Diagram Used for the Evalua-
tion of the Noise and Bandwidth Performance of
the Classical Transimpedance Amplifier and the
Switched Integrator.
Signal Gain
f
NOISE at
10kHz
(nV/√Hz)
INPUT
INPUT BIAS
CURRENT
(pA, max)
u
fp=1/(2πR2C2)
BANDWIDTH CAPACITANCE
2πR
C
2
1
PRODUCT
(MHz, typ)
(pF, typ)
fz=1/(2π(R1 || R2) (C1 + C2))
OPA111BM
OPA124BP
OPA627BP
OPA404G
OPA128BM
OPA2111BM
OPA2107BM
8
8
6
2
1.6
16
6.4
1
4
4
15
4
3
4
1
1
5
4
0.15
4
1 + C1/C2
High Frequency
Noise Gain
DC Noise Gain
1 + R2/R1
12(1)
15(1)
8
(b)
fz
fp
fu
Log f
2
4.5
8(1)
6
5
NOTE: (1) Denotes typical values.
FIGURE 7. Noise And Signal Response of the Classical
Transimpedance Amplifier.
TABLE I. Low Noise FET Input Op Amps Typically Used
In Transimpedance Amplifier Applications. In
transimpedance applications, the input capaci-
tance of the amplifier equals input common-
mode capacitance plus input differential capaci-
tance.
3
The model in Figure 7 shows the overall noise gain response
of the transimpedance circuit. The signal bandwidth is deter-
mined by a pole generated by R2 and C2. The noise band-
width is determined by the open loop gain roll off of the op
amp. To maximize the signal bandwidth and insure an
approximate 45° phase margin with a 25% step function
overshoot, C2 is selected using the formula below:
1M
100k
10k
1k
R2 = 1MΩ
Noise ≈ 20µVrms
R2 = 10MΩ
Noise ≈ 35µVrms
C1
C2 =
2πR2 • fu
0.1
where fu = op amp unity gain bandwidth
100
200
300
400
500
600
Here the signal bandwidth and noise bandwidth are identical
and equal to:
Photodiode and Op Amp Capacitance, C1 (pF)
FIGURE 8. Signal Bandwidth and Output Noise Change
With Changes in Input Capacitance, C1, of a
Transimpedance Amplifier Using the OPA111
as the Op Amp.
1
BW =
2πR2C2
In some applications, an overshoot of 25% may be too much.
A more conservative 5% overshoot can be designed with a
phase margin of 65° by using the formula below to select C2:
Burr-Brown macromodel for the OPA627 is the
OPA627E.MOD. The PSpice Probe command needed to
calculate the cumulative rms noise is SQRT(S(V(ONOISE)
• V(ONOISE))). Figure 8 shows how a transimpedance
amplifier’s (designed using the OPA124) signal bandwidth
and output noise change with values of input capacitance.
Note that the output noise is unexpectedly flat across changes
in C1. This is because the signal and noise bandwidth
decrease with increases of C2. A lower noise bandwidth
yields lower rms noise at the output of the amplifier. The
signal-to-noise ratio improves.
C
1
C
= 2 •
2
2πR • f
u
2
where fu = op amp unity gain bandwidth
Typical calculated values for C2 would be from sub-pico
farads to 20 or 30pF. Actual minimum circuit values for C2
are dependent on the stray capacitance of R2 and PC board
layout. Typically, a resistor has 0.5pF of stray capacitance.
Using the C2 value calculated above (for a 65° phase mar-
gin), the effective noise bandwidth is equivalent to the noise
gain 3dB bandwidth times π/2 or:
To improve the signal-to-noise ratio of a transimpedance
amplifier, the designer can select a lower noise amplifier,
reduce the (1+C1/C2) noise gain, reduce the feedback resistor
value, or reduce the signal bandwidth of the system with an
additional filter or a slower op amp. Lower noise FET
amplifiers usually have a wider bandwidth and higher input
capacitance than the higher noise FET amplifiers. If a lower
noise, wider bandwidth amplifier is selected as the op amp
for the transimpedance amplifier, the increase in bandwidth
and input capacitance may cause more noise in the system
than the original op amp. A filter can be used to reduce the
overall bandwidth and reduce the noise. Additionally, the
noise gain of the transimpedance amplifier can be reduced
by increasing C2 or decreasing C1. The photodetector can be
selected in order to reduce C1. Sometimes this is not possible
because of the design constraints of photodetector vs the
signal source. C2 can be increased at the expense of reduced
bandwidth. More elaborate techniques can be used to reduce
noise, such as a more complex feedback network around the
amplifier or boot-strapping the photodetector. These tech-
niques are beyond the scope of this application note. Refer
to the reference articles for more depth.
1
BWeffective noise
=
2R2C2
and the signal bandwidth is:
1
BWsignal
=
2πR2C2
Usually it is necessary to follow the transimpedance ampli-
fier with a low pass filter to further reduce the wideband
noise beyond the signal bandwidth. A single pole, low-pass
filter with a bandwidth at twice the signal bandwidth of the
transimpedance amplifier can easily improve the dynamic
range of the transimpedance amplifier by 4 or 5 dB.
Brute force calculations should be performed to understand
the noise contributions of the regions illustrated in Figure 7
(see OPA101 data sheet). For instance, R1 contributes to
overall noise gain in the lower frequencies and can be mostly
ignored. This insight is valuable when considering design
options to further improve the circuit. Once the details are
understood, an easier approach is to use a macromodel and
simulate the results. The macromodel must be able to simu-
late the noise performance of the op amp. The appropriate
One fundamental performance difference between the tradi-
tional transimpedance amplifier and the switched integrator
is that the amplifier gives a real time representation of the
light excitation at the output of the amplifier, and the
switched integrator gives a time-averaged representation of
4
100
90
80
70
60
50
40
30
20
10
0
C2
R2
C1
IIN
R1
1/2
ACF2101
eO
(a)
0
100 200 300 400 500 600 700 800 900 1000
C1 (µF)
|A| (dB)
FIGURE 10. Total Output Noise vs C1 and C2 of the ACF2101
Switched Integrator.
Open-Loop Gain of Op Amp
tor amplifier transfer function is dominated by the ratio of
the feedback capacitor, C2, and time. Referring to Figure 3,
when S1 is closed, the input current flows past the inverting
node of the op amp (which is held at virtual ground) and
charges C2. The input current consequently causes the volt-
age at the output of the op amp to change in the negative
direction over time. The voltage output of the switched
integrator represents the average current input signal over a
specified time, as opposed to the real time signal of the
previous example. The ACF2101 switched integrator, shown
in Figure 3, has a maximum input current specified at
100µA. The input current is restricted by the internal capaci-
tor of the ACF2101 (100pF) and the 1V/µs slew rate of the
amplifier. If an external capacitor is used, input currents can
exceed 100µA as long as the following ratio is true:
DC Noise Gain
R2
= (1 + —)
R1
1/(2πR2C2)
High Frequency
C1
Noise Gain = (1 + —)
C2
Noise Gain
1/(2πR1 || R2 (C1 + C2))
Region 3
Log f
(b)
fp
fz
Region 1
Region 2
C2
≥ 106
FIGURE 9. Noise and Signal Response of a Switched
Integrator.
farad/sec
(
)
(integration time)
where the integration time equals the amount of time be-
tween samples.
the input information from the photodetector. The real time
solution is limited in bandwidth by the selected amplifier,
the settling time of the amplifier, and the required feedback
capacitor and resistor (C2 and R2). Additionally, a filter is
usually used following the output of the transimpedance
amplifier to further reduce noise at higher frequencies.
If that ratio is less than 106 (farad/sec), the ACF2101 may
loose accuracy at the output. Whenever possible, the internal
capacitor should be used with the ACF2101 to insure greater
gain and linearity accuracy. Figure 9 is used to evaluate the
noise contribution of the op amp, gained by the feedback
network of the ACF2101 and the photodiode. Here the reset
switch, (S2 as illustrated in Figure 3) is modeled as a
noiseless resistor (R2). The typical resistance of S2, when it
is open, is 1000GΩ. The switched integrator, ACF2101, has
an internal feedback capacitor, C2, of 100pF. The user may
choose to use an external capacitor instead of the internal
capacitor provided. Typical values can range up to 2000pF.
If an external capacitor is used, care must be taken to choose
an integration capacitor with a low voltage coefficient,
temperature coefficient, memory, and leakage current. Suit-
able types include NPO ceramic, polycarbonate, polysty-
rene, and silver mica.
This approach is optimal for low and medium bandwidth
applications where information about the amplitude and
shape of the input signal is critical. The design problem is
complex because of the trade-offs between noise and band-
width and the abundance of op amp choices. Also, the
capacitor and resistor accuracy requirements make this de-
sign difficult and sometimes expensive to manufacture in a
production environment.
NOISE ANALYSIS
OF SWITCHED INTEGRATOR AMPLIFIER
Where the traditional transimpedance transfer function is
dominated by the feedback resistor, R2, the switched integra-
The total noise contribution of the op amp and the feedback
network of the switched integrator is equivalent to the
5
tor, the slew rate of the amplifier, the settling time of the
switches and amplifier. The bandwidth of the switched
integrator can be improved by decreasing the integration
capacitor, C2. As shown in Figure 11, the settling time of the
reset switch is increased with increases in C2.
square root of the sum of the squares of three regions as
shown in Figure 9. The noise in the first region is equal to
the average op amp noise over that region times the square
root of the region bandwidth. The pole in the noise gain of
the switched integrator circuit generated by R2 and C2 is in
the sub-Hertz region. For example, if C2 = 100pF and R2 =
1000GΩ the pole generated by the RC pair is equal to
1.59mHz. To calculate the noise contribution of this region
the average noise over the region is multiplied times the
square root of 1.59mHz which is equal to 39.87E–3. Quick
calculations show that any noise gained by the DC gain
(1+R2/R1) of the switched integrator is negligible. In addi-
tion, the zero generated by the (R1 || R2)(C1+C2) combination
is also in the low frequency range. Using a typical value of
100MΩ for R1, 50pF for C1, 1000GΩ for R2 and 100pF for
C2, the zero is located at 10.6Hz. Again, the noise contribu-
tion from this region is negligible. Consequently, the noise
contribution from the op amp and its feedback network in
conjunction with the photodiode is dominated by the op amp
noise times (1 + C1/C2).
40
30
20
10
0
0
100 200 300 400 500 600 700 800 900 1000
C2 (pF)
In addition to the gained op amp noise mentioned above,
charge injection and KT/C (capacitor noise) also contribute to
the total noise figure of the switched integrator. The switch
network shown in Figure 4 is used for the switches of the
ACF2101 to reduce charge injection noise. Figure 10 illus-
trates the total output noise of the switched integrator with
various C1 and C2 values.
FIGURE 11. Reset Time C2 vs the ACF2101 Switched
Integrator.
The switched integrator requires external digital support
circuitry to drive the hold, reset and select switches. If an
external integration capacitor (C2) is used, gain accuracy can
be compromised due to the accuracy of the capacitor. The
select switch allows the user of the ACF2101 switched
integrator to eliminate a sample hold amplifier.
The ACF2101 switched integrator is a sampled system
controlled by the sampling frequency (fS), which is usually
dominated by the integration time. The fastest feasible
sampling frequency for the ACF2101 is 42.55kHz. This
assumes that the internal capacitor (100pF) is used. The full
scale output is –10V and the settling time requirements are
to 0.01% accuracy. Input signals should be below the Nyquist
frequency (fS/2) to avoid aliasing errors. The bandwidth of
the ACF2101 is determined by the slew rate of the amplifier,
settling times of the reset (S2) and select (S3) switches as well
as the on-to-off and off-to-on switching speeds. The slew
rate of the amplifier is guaranteed a minimum of 1V/µs. The
output node requires at least 10µs to reach full scale. This
time restraint can be reduced if the full 10V swing capability
of the ACF2101 is not used.
COMPARING THE TRADITIONAL
TRANSIMPEDANCE AMPLIFIER
TO THE SWITCHED INTEGRATOR
Two examples are selected for comparison of the
transimpedance amplifier and the switched integrator ampli-
fier. In both examples, optimum noise solutions and opti-
mum bandwidth solutions are considered.
OPTIMUM NOISE PERFORMANCE OPTIMUM BANDWIDTH PERFORMANCE
The settling time of the reset switch (S2) is 5µs to 0.01%
accuracy, which is limited by slew rate of the amplifier and
the R2 || C2 time constant. The reset switch settling time
increases with larger values of C2; however, if the user also
reduces the full scale signal output as described above, this
time is reduced proportionally to the output swing maxi-
mum. The select switch (S3) has a 2µs settling time to 0.01%
accuracy for loads ≤ 100pF and the delay between switching
should be about 0.5µs.
TRANS-
SWITCHED
TRANS-
SWITCHED
IMPEDANCE
INTEGRATOR
IMPEDANCE
INTEGRATOR
Device
OPA124
1pA
ACF2101
1pA
OPA627
5pA
ACF2101
1pA
IB
C2
0.5pF
100pF
0.5pF
1.5pF
Signal
Bandwidth
3.2kHz
50Hz
3.2kHz
3.35kHz
Noise
Bandwidth
5kHz
200µVrms
94dB
250kHz
35µVrms
109dB
79kHz
400µVrms
88dB
250kHz
100µVrms
100dB
Noise
SNR
The signal-to-noise ratio of the switched integrator can be
reduced by selecting a higher value integration capacitor, C2.
The switched integrator is limited in bandwidth by the
amplifier and the nature of the transfer function. The output
signal of the integrator is time averaged. The sampling
frequency is restricted by the size of the integrating capaci-
TABLE II. Transimpedance and Switched Integrator De-
sign Comparison Using a 100pF Photodiode
with Maximum Output Current of 100nA. Val-
ues of R were calculated assuming a 65° phase
margin. 2
6
The first design problem uses an average sized photo diode
(C1 = 100pF) with a maximum output current of 100nA. As
shown in Table II, the OPA124 was selected for the low
noise comparison and the OPA627 was selected for the
wide-bandwidth comparison. The fullscale output of the
transimpedance amplifier is designed to be –10V. R2 is
selected to be 100MΩ. C2 of the OPA124 low noise circuit
is restricted by the parasitic capacitance of the feedback
resistor, 0.5pF. The OPA124 has a maximum input bias
current of 1pA, low drift of 1µV/°C, and low offset voltage.
The signal-to-noise ratio of this design is 94dB with a signal
bandwidth of 3.2kHz.
OPTIMUM NOISE PERFORMANCE OPTIMUM BANDWIDTH PERFORMANCE
TRANS-
SWITCHED
TRANS-
SWITCHED
IMPEDANCE
INTEGRATOR
IMPEDANCE
INTEGRATOR
Device
OPA124
1pA
ACF2101
1pA
OPA627
5pA
ACF2101
1pA
IB
C2
18.2pF
500pF
6.76pF
210pF
Signal
Bandwidth
87kHz
10kHz
235kHz
24kHz
Noise
Bandwidth
275kHz
31µVrms
110dB
250kHz
15µVrms
116dB
740kHz
108µVrms
99dB
250kHz
20µVrms
114dB
Noise
SNR
TABLE III.Transimpedance and Switched Integrator De-
sign Comparison Using a 100pF Photodiode
With Maximum Output Current of 100µA. Val-
ues of R were calculated assuming a 65° phase
margin. 2
In contrast, the ACF2101 is configured to minimize noise by
using the on-chip capacitor C2 = 100pF. As shown in Figure
10, the rms noise performance is typically 35µVrms. This
noise performance can be improved by using a higher value
external capacitor, but, the bandwidth performance of the
circuit is compromised. The signal-to-noise ratio of the
switched integrator is better than the transimpedance con-
figuration at 109dB, but the bandwidth is only 50Hz.
The switched integrator is designed with C2 = 500pF (exter-
nal capacitor). A larger capacitor is used to improve the
noise performance of the circuit. The noise performance of
the switched integrator is improved over the transimpedance
amplifier, yet the bandwidth is considerably smaller.
In the second section of Table II, the two circuits are
optimized for bandwidth. Here the OPA627 is selected as
the preferred op amp in hopes of improving the bandwidth
of the transimpedance amplifier. The transimpedance design
using the OPA627 does indeed change the bandwidth of the
circuit, but in an undesirable way. C2 is still limited to 0.5pF
because of the stray capacitance of R2, consequently the
signal bandwidth does not change from the OPA124 design.
The noise bandwidth, however, does change by a factor of
~16, causing a significant increase in noise. The signal-to-
noise ratio of this circuit is 88dB. The designer would be
better off using the OPA124 as the amplifier instead of the
OPA627 for this application.
The bandwidth and noise performance of the transimpedance
amplifier can be improved by using the OPA627 in place of
the OPA124. As shown in Table III, the signal bandwidth is
nearly tripled. On the other hand, the switched integrator is
designed for improved bandwidth performance by decreas-
ing C2 to equal 210pF. Although the noise performance is
better than the transimpedance amplifier, the bandwidth is
restricted by the slew rate, settling times, and switching
times of the switched integrator.
IN CONCLUSION
In contrast, the ACF2101 is also configured to maximize
bandwidth. Here a feedback capacitor of 1.5pF is selected.
PC board layout precautions should be taken to reduce stray
capacitance. The signal bandwidth of the circuit is designed
to 3.35kHz with a signal-to-noise ratio of 100dB. In this
example, the noise and bandwidth performance of the
ACF2101 switched integrator is better than the
transimpedance configuration. The ACF2101 switched inte-
grator is best optimized for low input current, high input
capacitance applications.
This application note has taken a look at a few variables that
optimize the performance of circuits that amplify photo-
diode signals. In addition to the solutions presented, alterna-
tives should also be explored before the final design is
released to production.
REFERENCES
OPA101 Product Data Sheet, Burr-Brown PDS-434.
Graeme, Jerald, “FET Op Amps Convert Photodiode Out-
puts to Usable Signals”, EDN, October 29, 1987.
Table III illustrates the second design problem where the
photodiode has the same stray capacitance (C1) of 100pF but
a maximum current signal of 100µA. The OPA124 is se-
lected for the low noise transimpedance amplifier. In this
case, R2 is selected to be 100kΩ and C2 equal to 18.2pF. The
noise performance of this amplifier is 31µVrms with a
signal-to-noise ratio of 110dB.
ACF2101 Product Data Sheet, Burr-Brown PDS-1078.
Graeme, Jerald, “Circuit Options Boost Photodiode Band-
width”, EDN, May 21, 1992.
Graeme, Jerald, “Phase Compensation Optimizes Photo-
diode Bandwidth”, EDN, May 7, 1992.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
7
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