AM0608-020 [ETC]
BJT ; BJT\n型号: | AM0608-020 |
厂家: | ETC |
描述: | BJT
|
文件: | 总4页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AM0608-020
RF & MICROWAVE TRANSISTORS
DESCRIPTION
KEY FEATURES
The AM0608-020 is an internally-matched, common base silicon
ꢀRefractory/Gold
bipolar device optimized for pulsed applications in the 600 – 750 MHz
frequency range.
Metallization
ꢀInternal Input Matching
ꢀMetal/Ceramic Hermetic
Package
Housed in the popular IMPAC hermetic metal/ceramic package,
this device uses a refractory/gold overlay die geometry for ruggedness
and long-term reliability.
ꢀPOUT = 20 W Min.
ꢀGP = 9.0 dB Gain
IMPORTANT: For the most current data, visit: http://www.advancedpower.com
APPLICATIONS/BENEFITS
ꢀAvionics Applications
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
CASE
Symbol
Parameter
Value
Unit
100
W
PDISS
Power Dissipation* (TC ≤ 100°C)
Device Current*
2.4
A
V
°C
°C
IC
VCC
TJ
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
40
250
-65 to +150
TSTG
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
1.5
°C/W
* Applies only to rated RF amplifier operation
053-7008 Rev - 9-2002
AM0608-020
RF & MICROWAVE TRANSISTORS
STATIC ELECTRICAL SPECIFICATIONS (T
= 25°C)
CASE
AM0608-020
Symbol
Test Conditions
Units
Min.
Typ.
Max.
5
55
3.5
55
V
V
BVCBO
BVEBO
BVCER
ICES
IC = 15 mA
IE = 0 mA
IC = 0 mA
IE = 1 mA
V
IC = 15 mA
RBE = 10 Ω
mA
V
V
BE = 0 V
CE = 5 V
v
CE = 35 V
20
hFE
IC = 750 mA
DYMANIC ELECTRICAL SPECIFICATIONS (T
= 25°C)
CASE
AM0608-020
Symbol
Test Conditions
Units
Min.
20
Typ.
Max.
f = 600 – 750 MHz
f = 600 – 750 MHz
f = 600 – 750 MHz
PIN = 2.5 W VCC = 35 V
PIN = 2.5 W VCC = 35 V
PIN = 2.5 W VCC = 35 V
W
%
dB
POUT
ηc
40
9.0
GP
Note:
Pulse width = 10µSec
Duty Cycle = 10%
053-7008 Rev - 9-2002
AM0608-020
RF & MICROWAVE TRANSISTORS
053-7008 Rev - 9-2002
AM0608-020
RF & MICROWAVE TRANSISTORS
053-7008 Rev - 9-2002
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