AP1039 [ETC]

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 7.5A I(C) | TO-210AC ; 晶体管| BJT | PNP | 250V V( BR ) CEO | 7.5AI ( C) | TO- 210AC
AP1039
型号: AP1039
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 7.5A I(C) | TO-210AC
晶体管| BJT | PNP | 250V V( BR ) CEO | 7.5AI ( C) | TO- 210AC

晶体 晶体管
文件: 总1页 (文件大小:72K)
下载:  下载PDF数据表文档文件

AP103A332JQU2A

Ceramic Capacitor, Multilayer, Ceramic, 25V, 5% +Tol, 5% -Tol, C0G, 30ppm/Cel TC, 0.0033uF, Surface Mount, 1210, CHIP

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0 AVX

AP1041

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-111

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15 ETC

AP1041AEN

Brush DC Motor Controller,

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0 AKM

AP1042

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-111

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18 ETC

AP1043

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3

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9 ETC

AP1044

TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3

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10 ETC

AP1045

TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3

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32 ETC

AP1045A

2.4~2.5 GHz High Power Amplifier

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34 ETC

AP104-69

RF Amplifier

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59 ETC

AP1047

TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 3A I(C) | TO-66

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20 ETC

AP1047

AP1047 is a linear, three-stage power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22dBm output power under 64QAM OFDM modulation, with 2.5% EVM at 3.3V. The PA also includes on-chip power detector, providing a DC voltage proportional to the output power of device. The AP1047 is housed in a 3 x 3(mm), 16 pin, QFN leadless package.

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35 RFHIC

AP1048

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-210AE

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32 ETC

AP1048

暂无描述

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5 APITECH

AP1049

TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-3

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10 ETC

AP1049

Transistor,

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1 APITECH