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APT1004R2GN [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-257ISO ; 晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 3A I（ D） | TO- 257ISO\n
APT1004R2GN
元器件型号： APT1004R2GN
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-257ISO
晶体管| MOSFET | N沟道| 1KV V（ BR ） DSS | 3A I（ D） | TO- 257ISO\n

晶体 晶体管 局域网
PDF文件： 总4页 (文件大小：227K)
下载文档：  下载PDF数据表文档文件
型号参数：APT1004R2GN参数
 查看货源

APT1004R2KN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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24 ADPOW

APT1004RAN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3

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28 ETC

APT1004RBN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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62 ADPOW

APT1004RBN-BUTT

 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

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0 MICROSEMI

APT1004RBNG

 Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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0 MICROSEMI

APT1004RBN-GULLWING

 4.4A, 1000V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN

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0 MICROSEMI

APT1004RBNR

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD

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14 ETC

APT1004RCN

 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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50 ADPOW

APT1004RDN

 TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP

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12 ETC

APT1004RDN

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 ADPOW

APT1004RGN

 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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37 ADPOW

APT1004RKN

 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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55 ADPOW

APT10050B2FLC

 Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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1 ADPOW

APT10050B2LC

 Power MOS VITM is a new generation of low gate charge, high voltage

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110 ADPOW

APT10050B2LC

 21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3

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0 MICROSEMI
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