APT5014LFLC [ETC]
;型号: | APT5014LFLC |
厂家: | ETC |
描述: | 晶体 晶体管 开关 脉冲 高压 局域网 |
文件: | 总2页 (文件大小:40K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
APT5014B2FLC
APT5014LFLC
500V 37A 0.140W
B2FLC
TM
FREDFET
POWER MOS VI
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achievedby optimizingthemanufacturingprocesstominimizeCiss andCrss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
TO-264
LFLC
D
• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance
G
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5014
500
UNIT
VDSS
ID
Drain-Source Voltage
Volts
37
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
148
Pulsed Drain Current
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
520
Watts
W/°C
PD
4.16
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
37
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
37
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.140
250
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2000
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5014 B2FLC LFLC
Test Conditions
GS = 0V
MIN
MIN
MIN
TYP
3780
720
160
110
25
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
pF
VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 0.5 VDSS
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = ID [Cont.] @ 25°C
GS = 15V
65
10
V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
17
td(off)
tf
Turn-off Delay Time
Fall Time
23
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
37
MAX
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
148
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -ID [Cont.])
1.3
5
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
525
ns
µC
trr
(IS = -ID [Cont.], di
Reverse Recovery Charge
(IS = -ID [Cont.], di
dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di
dt = 100A/µs)
/dt = 100A/µs)
1.6
6.0
14
Qrr
/
IRRM
Amps
/
24
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.28
40
UNIT
Junction to Case
RqJC
RqJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.34mH, R = 25W, Peak I = 37A
j
G
L
di
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
I
S
£ -I [Cont.],
/
= 100A/µs, T £ 150°C, R = 2.0W, V = 200V.
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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