AS7C34096 [ETC]

5V/3.3V 512K x 8 CMOS SRAM ; 5V / 3.3V 512K ×8 CMOS SRAM\n
AS7C34096
型号: AS7C34096
厂家: ETC    ETC
描述:

5V/3.3V 512K x 8 CMOS SRAM
5V / 3.3V 512K ×8 CMOS SRAM\n

静态存储器
文件: 总10页 (文件大小:241K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
March 2001  
AS7C4096  
AS7C34096  
®
5V/3.3V 512K × 8 CMOS SRAM  
Features  
• AS7C4096 (5V version)  
• Low power consumption: STANDBY  
• AS7C34096 (3.3V version)  
• Industrial and commercial temperature  
• Organization: 524,288 words × 8 bits  
• Center power and ground pins  
• High speed  
- 10/12/15/20 ns address access time  
- 5/6/7/8 ns output enable access time  
• Low power consumption: ACTIVE  
- 1375 mW (AS7C4096) / max @ 12 ns  
- 468 mW (AS7C34096) / max @ 12 ns  
- 110 mW (AS7C4096) / max CMOS  
- 72 mW (AS7C34096) / max CMOS  
• 2.0V data retention  
• Equal access and cycle times  
• Easy memory expansion with CE, OE inputs  
• TTL-compatible, three-state I/O  
• JEDEC standard packages  
- 400 mil 36-pin SOJ  
- 400 mil 44-pin TSOP II  
• ESD protection 2000 volts  
• Latch-up current 200 mA  
Logic block diagram  
Pin arrangement  
36-pin SOJ (400 mil)  
44-pin TSOPII(400 mil)  
V
CC  
NC  
NC  
NC  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
2
GND  
A0  
A1  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
NC  
A0  
3
2
A18  
A17  
A16  
A15  
OE  
A18  
Input buffer  
A1  
4
A2  
3
A2  
A17  
A16  
A15  
OE  
5
A3  
4
A3  
6
A4  
5
A0  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
A4  
7
CE  
6
CE  
8
I/O1  
I/O8  
/O1  
/O2  
7
I/O8  
I/O7  
GND  
I/O1  
I/O8  
I/O7  
GND  
9
8
524,288 × 8  
Array  
(4,194,304)  
I/O2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
V
9
CC  
V
CC  
V
GND  
/O3  
/O4  
WE  
A5  
10  
11  
12  
13  
14  
15  
16  
17  
18  
CC  
V
GND  
I/O3  
I/O4  
WE  
A5  
CC  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
I/O6  
I/O5  
A14  
A13  
A12  
A11  
A10  
NC  
A9  
A6  
A6  
A7  
A7  
A8  
Column decoder  
WE  
OE  
CE  
A8  
Control  
Circuit  
A9  
A9  
NC  
NC  
NC  
NC  
Selection guide  
AS7C4096  
AS7C34096  
–12  
AS7C4096  
AS7C34096  
–15  
AS7C4096  
AS7C34096  
–20  
AS7C34096  
–10  
Unit  
ns  
Maximum address  
access time  
10  
5
12  
6
15  
7
20  
9
Maximum output  
enable access time  
ns  
AS7C4096  
160  
250  
130  
20  
220  
110  
20  
180  
100  
20  
mA  
mA  
mA  
mA  
Maximum operating  
current  
AS7C34096  
AS7C4096  
AS7C34096  
Maximum CMOS standby  
current  
20  
20  
20  
20  
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Copyright © Alliance Semiconductor. All rights reserved.  
AS7C4096  
AS7C34096  
®
Functional description  
The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices  
organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple  
interfacing are desired.  
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are  
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory  
systems.  
When CE is high the device enters standby mode. The AS7C4096 is guaranteed not to exceed 110 mW power consumption in  
CMOS standby mode. Both devices offer 2.0V data retention.  
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is written  
on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins  
only after outputs have been disabled with output enable (OE) or write enable (WE).  
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives  
I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write  
enable is active, output drivers stay in high-impedance mode.  
All chip inputs and outputs are TTL-compatible, and operation is from a single supply voltage. Both devices are available in the  
industry standard 400-mil 36-pin SOJ and 44-pin TSOP II packages.  
Absolute maximum ratings  
Parameter  
Device  
Symbol  
Vt1  
Min  
–1  
Max  
+7.0  
+5.0  
VCC +0.5  
1.0  
Unit  
V
AS7C4096  
AS7C34096  
Voltage on VCC relative to GND  
Vt1  
–0.5  
–0.5  
V
Voltage on any pin relative to GND  
Power dissipation  
Vt2  
V
PD  
W
°C  
°C  
mA  
Storage temperature (plastic)  
Temperature with VCC applied  
DC current unto output (low)  
Tstg  
–65  
–55  
+150  
+125  
20  
Tbias  
IOUT  
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper-  
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
Truth table  
CE  
H
L
WE  
X
OE  
X
Data  
High Z  
High Z  
DOUT  
DIN  
Mode  
Standby (ISB, ISB1  
)
H
H
L
H
L
Output disable (ICC)  
Read (ICC  
Write (ICC  
L
)
L
X
)
Key: X = Don’t care, L = Low, H = High  
3/23/01; v.1.1  
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P. 2 of 10  
AS7C4096  
AS7C34096  
®
Recommended operating condition  
Parameter  
Device  
Symbol  
VCC(12/15/20)  
CC (–10)  
Min  
4.5  
Nominal  
Max  
Unit  
V
AS7C4096  
AS7C34096  
AS7C34096  
AS7C4096  
AS7C34096  
5.0  
3.30  
3.3  
5.5  
3.6  
Supply voltage  
Input voltage  
V
3.15  
3.0  
V
VCC(12/15/20)  
3.6  
V
VIH  
VIH  
VIL  
TA  
2.2  
VCC + 0.5  
VCC + 0.5  
0.8  
V
2.0  
–0.5†  
V
V
commercial  
industrial  
0
70  
°C  
°C  
Ambient operating  
temperature  
TA  
–40  
85  
V
min = –3.0V for pulse width less than t /2.  
RC  
IL  
DC operating characteristics (over the operating range)1  
–10  
–12  
–15  
–20  
Parameter Symbol  
Test conditions  
Device  
Min Max Min Max Min Max Min Max Unit  
Input leakage  
|ILI|  
VCC = Max, VIN = GND to VCC  
1
1
1
1
µA  
current  
Output  
leakage  
current  
VCC = Max, CE = VIH  
VOUT= GND to VCC  
|ILO|  
1
1
1
1
µA  
Operating  
powersupply  
current  
AS7C4096  
250  
130  
220  
110  
180 mA  
100  
VCC = Max, CE < VIL  
f = fMax, IOUT = 0mA  
ICC  
AS7C34096  
160  
AS7C4096  
AS7C34096  
AS7C4096  
60  
60  
60  
20  
60  
60  
20  
60  
VCC = Max, CE = VIH  
f = fMax, IOUT = 0mA  
ISB  
mA  
60  
Standby  
powersupply  
current  
VCC = Max,  
20  
ISB1 CE VCC – 0.2V, VIN 0.2V or VIN  
CC – 0.2V, f = 0  
mA  
AS7C34096  
20  
20  
20  
20  
V
VOL  
IOL = 8 mA, VCC = Min  
IOH = –4 mA, VCC = Min  
0.4  
0.4  
0.4  
0.4  
V
V
Output  
voltage  
VOH  
2.4  
2.4  
2.4  
2.4  
Capacitance (f = 1MHz, T = 25° C, V = NOMINAL)2  
a
CC  
Symbol  
Parameter  
Input capacitance  
Signals  
A, CE, WE, OE  
I/O  
Test conditions  
VIN = 0V  
Max  
Unit  
CIN  
5
7
pF  
pF  
I/O capacitance  
CI/O  
VIN = VOUT = 0V  
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P. 3 of 10  
AS7C4096  
AS7C34096  
®
Read cycle (over the operating range)3,9  
–10  
–12  
–15  
–20  
Parameter  
Read cycle time  
Symbol Min  
Max  
Min  
12  
Max  
Min  
15  
Max  
Min  
20  
Max Unit Notes  
tRC  
tAA  
10  
20  
20  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address access time  
10  
10  
5
12  
12  
6
15  
15  
7
3
3
Chip enable (CE) access time  
Output enable (OE) access time  
tACE  
tOE  
Output hold from address change tOH  
3
3
3
3
3
5
CE Low to output in low Z  
CE High to output in high Z  
OE Low to output in low Z  
OE High to output in high Z  
Power up time  
tCLZ  
tCHZ  
tOLZ  
tOHZ  
tPU  
3
0
0
4, 5  
4, 5  
4, 5  
4, 5  
4, 5  
4, 5  
5
6
7
9
0
0
0
0
5
6
7
9
0
0
0
0
Power down time  
tPD  
10  
12  
15  
20  
Key to switching waveforms  
Rising input  
Falling input  
Undefined/don’t care  
Read waveform 1 (address controlled)3,6,7,9  
t
RC  
Address  
t
AA  
t
OH  
D
Data valid  
OUT  
Read waveform 2 (CE, OE controlled)3,6,8,9  
t
RC1  
CE  
t
OE  
OE  
t
t
OHZ  
OLZ  
t
t
ACE  
CHZ  
D
OUT  
Data valid  
t
CLZ  
t
PD  
I
I
CC  
SB  
t
Supply  
current  
PU  
50%  
50%  
Write cycle (over the operating range)11  
–10  
–12  
–15  
–20  
Parameter  
Write cycle time  
Symbol Min  
Max  
Min  
12  
8
Max  
Min  
15  
Max  
Min  
20  
Max Unit Notes  
tWC  
tCW  
10  
7
ns  
ns  
Chip enable (CE) to write end  
10  
12  
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P. 4 of 10  
AS7C4096  
AS7C34096  
®
–10  
–12  
–15  
–20  
Parameter  
Symbol Min  
Max  
Min  
8
Max  
Min  
10  
0
Max  
Min  
12  
0
Max Unit Notes  
Address setup to write end  
Address setup time  
tAW  
tAS  
7
0
6
9
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0
Write pulse width (OE = high)  
Write pulse width (OE = low  
Address hold from end of write  
Data valid to write end  
tWP1  
tWP2  
tAH  
7
8
10  
15  
0
12  
20  
0
10  
0
12  
0
tDW  
tDH  
tWZ  
tOW  
5
6
7
9
Data hold time  
0
0
0
0
4, 5  
4, 5  
4, 5  
Write enable to output in high Z  
Output active from write end  
0
5
0
0
7
0
3
3
3
3
Write waveform 1 (WE controlled)10,11  
t
WC  
t
t
t
AW  
AH  
Address  
WE  
t
WP  
t
AS  
t
DW  
DH  
D
Data valid  
IN  
t
t
WZ  
OW  
D
OUT  
Write waveform 2 (CE controlled)10,11  
t
WC  
t
t
AH  
AW  
Address  
t
t
CW  
AS  
CE  
t
WP  
WE  
t
t
t
WZ  
DW  
DH  
D
Data valid  
IN  
D
OUT  
Data retention characteristics (over the operating range)13  
Parameter  
VCC for data retention  
Symbol  
VDR  
Test conditions  
Min  
2.0  
Max  
Unit  
V
VCC = 2.0V  
CE VCC – 0.2V  
VIN VCC – 0.2V or  
VIN 0.2V  
Data retention current  
ICCDR  
tCDR  
tR  
500  
µA  
ns  
Chip deselect to data retention time  
Operation recovery time  
Input leakage current  
0
tRC  
ns  
|ILI|  
1
µA  
3/23/01; v.1.1  
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P. 5 of 10  
AS7C4096  
AS7C34096  
®
Data retention waveform  
Data retention mode  
V
V
V
CC  
V
2.0V  
CC  
CC  
DR  
t
t
R
CDR  
V
DR  
V
V
IH  
CE  
IH  
AC test conditions  
- Output load: see Figure B or Figure C.  
- Input pulse level: GND to 3.0V. See Figures A, B, and C.  
- Input rise and fall times: 2 ns. See Figure A.  
- Input and output timing reference levels: 1.5V.  
Thevenin equivalent:  
168W  
D
D
+1.728V  
OUT  
+5V  
+3.3V  
320W  
480W  
+3.0V  
GND  
D
OUT  
OUT  
90%  
10%  
90%  
10%  
255W  
C(14)  
GND  
350W  
C(14)  
GND  
2 ns  
Figure A: Input pulse  
Figure C: 3.3V Output load  
Figure B: 5V Output load  
Notes  
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CE is required to meet I specification.  
CC CC SB  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions.  
t
and t  
are specified with C = 5pF as in Figure C. Transition is measured 500 mV from steady-state voltage.  
CLZ  
CHZ L  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CE and OE are LOW for read cycle.  
Address valid prior to or coincident with CE transition Low.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CE or WE must be HIGH during address transitions. Either CE or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 Not applicable.  
13 2V data retention applies to commercial temperature range operation only.  
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
3/23/01; v.1.1  
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AS7C4096  
AS7C34096  
®
Typical DC and AC characteristics 12  
Normalized supply current I , I  
Normalized supply current I , I  
Normalized supply current I  
SB1  
CC SB  
CC SB  
vs. supply voltage V  
vs. ambient temperature T  
vs. ambient temperature T  
CC  
a
a
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
625  
25  
I
I
I
CC  
SB  
V
= V (NOMINAL)  
CC CC  
CC  
5
1
I
SB  
0.2  
0.04  
MIN  
NOMINAL  
–55  
–10  
Ambient temperature (  
Normalized access time t  
35  
80  
125  
–55  
–10  
35  
80  
MAX  
125  
Supply voltage (V)  
°
C)  
Ambient temperature (  
°
C)  
Normalized access time t  
vs. supply voltage V  
Normalized supply current I  
CC  
vs. cycle frequency 1/t , 1/t  
AA  
AA  
a
vs. ambient temperature T  
CC  
RC WC  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
= V (NOMINAL)  
V
= V (NOMINAL)  
CC  
CC  
CC CC  
T = 25° C  
a
T = 25° C  
a
MIN  
NOMINAL  
–55  
–10  
Ambient temperature (  
Output sink current I  
35  
80  
0
25  
Cycle frequency (MHz)  
Typical access time change  
vs. output capacitive loading  
50  
75  
MAX  
125  
100  
Supply voltage (V)  
°C)  
Output source current I  
vs. output voltage V  
t  
AA  
OH  
OH  
OL  
vs. output voltage V  
OL  
140  
120  
100  
80  
140  
120  
100  
80  
35  
30  
25  
20  
15  
10  
5
V
= V (NOMINAL)  
V
= V (NOMINAL)  
V
= V (NOMINAL)  
CC  
CC  
CC  
CC  
CC CC  
T = 25  
°
C
T = 25° C  
a
a
60  
60  
40  
40  
20  
20  
0
0
0
0
0
0
250  
500  
750  
1000  
V
V
CC  
CC  
Output voltage (V)  
Output voltage (V)  
Capacitance (pF)  
3/23/01; v.1.1  
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P. 7 of 10  
AS7C4096  
AS7C34096  
®
Package dimensions  
44-pin TSOP II  
Min(mm) Max(mm)  
1.2  
c
44434241403938373635343332313029282726  
252423  
A
A1  
A2  
b
0.05  
0.95  
0.30  
0.15  
1.05  
0.45  
E
E1  
44-pin TSOP II  
c
0.15 (typical)  
d
18.28  
10.03  
11.56  
18.54  
10.16  
11.96  
1 2 3 4 5 6 7 8 9 10111213141516171819202122  
E1  
E
d
e
0.80 (typical)  
L
0.40  
0.60  
L
A
2
A
0–5°  
A
1
e
b
36-pin SOJ 400  
Min(mils) Max(mils)  
A
.128  
0.148  
D
e
A1  
A2  
b
0.027  
b
0.102 NOM  
E E  
1
2
A
36-pin SOJ  
0.015  
0.026  
0.007  
.920  
0.020  
0.032  
0.013  
.930  
A1  
c
b1  
c
Seating  
Plane  
b
1
Pin 1  
D
e
0.045  
0.055  
A2  
E
0.400 NOM  
E
0.435  
0.445  
E
Ordering codes  
Package  
Version  
10 ns  
NA  
12 ns  
15 ns  
20 ns  
5V commercial  
5V industrial  
AS7C4096-12JC  
AS7C4096-12JI  
AS7C34096-12JC  
AS7C34096-12JI  
AS7C4096-12TC  
AS7C4096-12TI  
AS7C34096-12TC  
AS7C34096-12TI  
AS7C4096-15JC  
AS7C4096-15JI  
AS7C34096-15JC  
AS7C34096-15JI  
AS7C4096-15TC  
AS7C4096-15TI  
AS7C34096-15TC  
AS7C34096-15TI  
AS7C4096-20JC  
AS7C4096-20JI  
AS7C34096-20JC  
AS7C34096-20JI  
AS7C4096-20TC  
AS7C4096-20TI  
AS7C34096-20TC  
AS7C34096-20TI  
NA  
SOJ  
3.3V commercial  
3.3V industrial  
5V commercial  
5V industrial  
AS7C4096-10JC  
NA  
NA  
NA  
AS7C4096-10TC  
NA  
TSOP II  
3.3V commercial  
3.3V industrial  
NA: not available.  
3/23/01; v.1.1  
Alliance Semiconductor  
P. 8 of 10  
AS7C4096  
AS7C34096  
®
Part numbering system  
AS7C  
X
4096  
–XX  
J, T  
X
Package:  
J: 400-mil SOJ  
T: 400-mil TSOP II  
Temperature ranges:  
C: Commercial, 0° C to 70° C  
I: Industrial, -40° C to 85° C  
SRAM  
prefix  
Blank: 5V CMOS  
3: 3.3V CMOS  
Device  
number  
Access  
time  
3/23/01; v.1.1  
Alliance Semiconductor  
P. 9 of 10  
© Copyright Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names  
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that may appear in this document. The data contained herein represents Alliance’s best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without  
notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information  
for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the  
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agrees to indemnify Alliance against all claims arising from such use.  
AS7C4096  
AS7C34096  
®
3/23/01; v.1.1  
Alliance Semiconductor  
P. 10 of 10  

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