AT25SF161-SSPD-T [ETC]
16-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support;
| 型号： | AT25SF161-SSPD-T |
| 厂家： | 
ETC |
| 描述： | 16-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support 时钟 光电二极管 内存集成电路 |
| 文件： | 总49页 (文件大小：3392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AT25SF161
16-Mbit, 2.5V Minimum
SPI Serial Flash Memory with Dual-I/O and Quad-IO Support
Features
Single 2.5V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual and Quad Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Uniform 64-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Blocks via WP Pin
3 Protected Programmable Security Register Pages
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
0.7ms Typical Page Program (256 Bytes) Time
70ms Typical 4-Kbyte Block Erase Time
300ms Typical 32-Kbyte Block Erase Time
600ms Typical 64-Kbyte Block Erase Time
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
2µA Deep Power-Down Current (Typical)
10µA Standby current (Typical)
4mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil and 208-mil)
8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
Die in Wafer Form
Hi-Rel Plastic Available
8-ball die Ball Grid Array (dBGA - WLCSP)
DS-25SF161–046H–8/2017
Description
The Adesto® AT25SF161is a serial interface Flash memory device designed for use in a wide variety of high-volume
consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM
for execution. The flexible erase architecture of the AT25SF161 is ideal for data storage as well, eliminating the need for
additional data storage devices.
The erase block sizes of the AT25SF161 have been optimized to meet the needs of today's code and data storage
applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because
certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and
unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased
memory space efficiency allows additional code routines and data storage segments to be added while still maintaining
the same overall device density.
The device also contains three pages of Security Register that can be used for purposes such as unique device
serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. These Security Register
pages can be individually locked.
1.
Pin Descriptions and Pinouts
Table 1-1. Pin Descriptions
Asserted
State
Symbol
Name and Function
Type
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-Down
mode), and the SO pin will be in a high-impedance state. When the device is deselected,
data will not be accepted on the SI pin.
CS
Low
Input
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation
such as a program or erase cycle, the device will not enter the standby mode until the
completion of the operation.
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the
flow of data to and from the device. Command, address, and input data present on the SI pin
is always latched in on the rising edge of SCK, while output data on the SO pin is always
clocked out on the falling edge of SCK.
SCK
-
Input
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data
input including command and address sequences. Data on the SI pin is always latched in on
the rising edge of SCK.
With the Dual-Output and Quad-Output Read commands, the SI Pin becomes an output pin
(I/O0) in conjunction with other pins to allow two or four bits of data on (I/O3-0) to be clocked
in on every falling edge of SCK
SI (I/O0)
-
Input/Output
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as
the SI pin unless specifically addressing the Dual-I/O and Quad-I/O modes in which case it
will be referenced as I/O0
Data present on the SI pin will be ignored whenever the device is deselected (CS is
deasserted).
AT25SF161
DS-25SF161–046H–8/2017
2
Table 1-1. Pin Descriptions (Continued)
Asserted
State
Symbol
Name and Function
Type
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin
is always clocked out on the falling edge of SCK.
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O1) in
conjunction with other pins to allow two bits of data on (I/O1-0) to be clocked in on every
falling edge of SCK.
SO (I/O1)
-
Input/Output
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as
the SO pin unless specifically addressing the Dual-I/O modes in which case it will be
referenced as I/O1.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
WRITE PROTECT: The WP pin controls the hardware locking feature of the device.
With the Quad-Input Byte/Page Program command, the WP pin becomes an input pin (I/O2)
and, along with other pins, allows four bits (on I/O3-0) of data to be clocked in on every rising
edge of SCK. With the Quad-Output Read commands, the WP Pin becomes an output pin
(I/O2) in conjunction with other pins to allow four bits of data on (I/O3-0) to be clocked in on
every falling edge of SCK.
WP
(I/O2)
-
Input/Output
To maintain consistency with the SPI nomenclature, the WP (I/O2) pin will be referenced as
the WP pin unless specifically addressing the Quad-I/O modes in which case it will be
referenced as I/O2
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected
to VCC whenever possible.
HOLD: The HOLD pin is used to temporarily pause serial communication without
deselecting or resetting the device. While the HOLD pin is asserted, transitions on the SCK
pin and data on the SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an
effect on internally self-timed operations such as a program or erase cycle. Please refer to
“Hold Function” on page 34 for additional details on the Hold operation.
With the Quad-Input Byte/Page Program command, the HOLD pin becomes an input pin
(I/O3) and, along with other pins, allows four bits (on I/O3-0) of data to be clocked in on every
rising edge of SCK. With the Quad-Output Read commands, the HOLD Pin becomes an
output pin (I/O3) in conjunction with other pins to allow four bits of data on (I/O3-0) to be
clocked in on every falling edge of SCK.
HOLD
(I/O3)
-
Input/Output
To maintain consistency with the SPI nomenclature, the HOLD (I/O3) pin will be referenced
as the HOLD pin unless specifically addressing the Quad-I/O modes in which case it will be
referenced as I/O3
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be
used. However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
VCC
-
-
Power
Power
Operations at invalid VCC voltages may produce spurious results and should not be
attempted.
GROUND: The ground reference for the power supply. GND should be connected to the
system ground.
GND
AT25SF161
DS-25SF161–046H–8/2017
3
Figure 1-1. 8-SOIC (Top View)
Figure 1-2. 8-UDFN (Top View)
1
8
7
6
5
CS
VCC
HOLD
SCK
SI
CS
SO
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
2
SO
3
WP
WP
4
GND
GND
Figure 1-3. 8-ball WLCSP(Bottom View)
Vccc
CS
SOO
(I/O1)
HOLD
(II//O3)
WP
(I//O2)
SCCKK
GNNDD
SSI
(I/O0)
AT25SF161
DS-25SF161–046H–8/2017
4
2.
Block Diagram
Figure 2-1. Block Diagram
Control and
Protection Logic
I/O Buffers
and Latches
CS
SRAM
Data Buffer
SCK
Interface
Control
And
SI (I/O )
0
Y-Decoder
Y-Gating
Logic
SO (I/O )
1
Flash
Memory
Array
WP (I/O )
2
X-Decoder
HOLD (I/O )
3
Note: I/O
3-0
pin naming convention is used for Dual-I/O and Quad-I/O commands.
3.
Memory Array
To provide the greatest flexibility, the memory array of the AT25SF161 can be erased in four levels of granularity
including a full chip erase. The size of the erase blocks is optimized for both code and data storage applications, allowing
both code and data segments to reside in their own erase regions. The Memory Architecture Diagram illustrates the
breakdown of each erase level.
AT25SF161
DS-25SF161–046H–8/2017
5
Figure 3-1. Memory Architecture Diagram
Block Erase Detail
Page Program Detail
64KB
32KB
4KB
1-256 Byte
Block Address
Range
Page Address
Range
1FFFFFh–1FF000h
1FEFFFh–1FE000h
1FDFFFh–1FD000h
1FCFFFh–1FC000h
1FBFFFh–1FB000h
1FAFFFh–1FA000h
1F9FFFh–1F9000h
1F8FFFh–1F8000h
1F7FFFh–1F7000h
1F6FFFh–1F6000h
1F5FFFh–1F5000h
1F4FFFh–1F4000h
1F3FFFh–1F3000h
1F2FFFh–1F2000h
1F1FFFh–1F1000h
1F0FFFh–1F0000h
1EFFFFh–1EF000h
1EEFFFh–1EE000h
1EDFFFh–1ED000h
1ECFFFh–1EC000h
1EBFFFh–1EB000h
1EAFFFh–1EA000h
1E9FFFh–1E9000h
1E8FFFh–1E8000h
1E7FFFh–1E7000h
1E6FFFh–1E6000h
1E5FFFh–1E5000h
1E4FFFh–1E4000h
1E3FFFh–1E3000h
1E2FFFh–1E2000h
1E1FFFh–1E1000h
1E0FFFh–1E0000h
256 Bytes
1FFFFFh–1FFF00h
1FFEFFh–1FFE00h
1FFDFFh–1FFD00h
1FFCFFh–1FFC00h
1FFBFFh–1FFB00h
1FFAFFh–1FFA00h
1FF9FFh–1FF900h
1FF8FFh–1FF800h
1FF7FFh–1FF700h
1FF6FFh–1FF600h
1FF5FFh–1FF500h
1FF4FFh–1FF400h
1FF3FFh–1FF300h
1FF2FFh–1FF200h
1FF1FFh–1FF100h
1FF0FFh–1FF000h
1FEFFFh–1FEF00h
1FEEFFh–1FEE00h
1FEDFFh–1FED00h
1FECFFh–1FEC00h
1FEBFFh–1FEB00h
1FEAFFh–1FEA00h
1FE9FFh–1FE900h
1FE8FFh–1FE800h
4KB
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
32KB
64KB
Sector 31
32KB
32KB
32KB
64KB
Sector 30
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
0017FFh–001700h
0016FFh–001600h
0015FFh–001500h
0014FFh–001400h
0013FFh–001300h
0012FFh–001200h
0011FFh–001100h
0010FFh–001000h
000FFFh–000F00h
000EFFh–000E00h
000DFFh–000D00h
000CFFh–000C00h
000BFFh–000B00h
000AFFh–000A00h
0009FFh–000900h
0008FFh–000800h
0007FFh–000700h
0006FFh–000600h
0005FFh–000500h
0004FFh–000400h
0003FFh–000300h
0002FFh–000200h
0001FFh–000100h
0000FFh–000000h
00FFFFh–00F000h
00EFFFh–00E000h
00DFFFh–00D000h
00CFFFh–00C000h
00BFFFh–00B000h
00AFFFh–00A000h
009FFFh–009000h
008FFFh–008000h
007FFFh–007000h
006FFFh–006000h
005FFFh–005000h
004FFFh–004000h
003FFFh–003000h
002FFFh–002000h
001FFFh–001000h
000FFFh–000000h
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
32KB
32KB
64KB
Sector 0
AT25SF161
DS-25SF161–046H–8/2017
6
4.
Device Operation
The AT25SF161 is controlled by a set of instructions that are sent from a host controller, commonly referred to as the SPI
Master. The SPI Master communicates with the AT25SF161 via the SPI bus which is comprised of four signal lines: Chip
Select (CS), Serial Clock (SCK), Serial Input (SI), and Serial Output (SO).
The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode differing in respect to the
SCK polarity and phase and how the polarity and phase control the flow of data on the SPI bus. The AT25SF161
supports the two most common modes, SPI Modes 0 and 3. The only difference between SPI Modes 0 and 3 is the
polarity of the SCK signal when in the inactive state (when the SPI Master is in standby mode and not transferring any
data). With SPI Modes 0 and 3, data is always latched in on the rising edge of SCK and always output on the falling edge
of SCK.
Figure 4-1. SPI Mode 0 and 3
CS
SCK
MSB
LSB
SI
MSB
LSB
SO
4.1
4.2
Dual Output Read
The AT25SF161 features a Dual-Output Read mode that allow two bits of data to be clocked out of the device every
clock cycle to improve throughput. To accomplish this, both the SI and SO pins are utilized as outputs for the transfer of
data bytes. With the Dual-Output Read Array command, the SI pin becomes an output along with the SO pin.
Quad Output Read
The AT25SF161 features a Quad-Output Read mode that allow four bits of data to be clocked out of the device every
clock cycle to improve throughput. To accomplish this, the SI, SO, WP, HOLD pins are utilized as outputs for the transfer
of data bytes. With the Quad-Output Read Array command, the SI, WP, HOLD pins become outputs along with the SO
pin.
5.
Commands and Addressing
A valid instruction or operation must always be started by first asserting the CS pin. After the CS pin has been asserted,
the host controller must then clock out a valid 8-bit opcode on the SPI bus. Following the opcode, instruction dependent
information such as address and data bytes would then be clocked out by the host controller. All opcode, address, and
data bytes are transferred with the most-significant bit (MSB) first. An operation is ended by deasserting the CS pin.
Opcodes not supported by the AT25SF161 will be ignored by the device and no operation will be started. The device will
continue to ignore any data presented on the SI pin until the start of the next operation (CS pin being deasserted and
then reasserted). In addition, if the CS pin is deasserted before complete opcode and address information is sent to the
device, then no operation will be performed and the device will simply return to the idle state and wait for the next
operation.
Addressing of the device requires a total of three bytes of information to be sent, representing address bits A23-A0.
Since the upper address limit of the AT25SF161 memory array is 1FFFFFh, address bits A23-A21 are always ignored by
the device.
AT25SF161
DS-25SF161–046H–8/2017
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Table 5-1. Command Listing
Clock
Frequency
Address Dummy
Data
Bytes
Section
Link
Command
Opcode
Bytes
Bytes
Read Commands
0Bh
03h
3Bh
BBh
6Bh
EBh
0000 1011
Up to 85 MHz
Up to 50 MHz
Up to 85 MHz
Up to 85 MHz
Up to 85 MHz
Up to 85 MHz
3
3
3
3
3
3
1
0
1
0
1
1
1+
1+
1+
1+
1+
1+
Read Array
6.1
0000 0011
0011 1011
1011 1011
0110 1011
1110 1011
Dual Output Read
Dual I/O Read
6.2
6.3
6.4
6.5
Quad Output Read
Quad I/O Read
1111 1111
1111 1111
Continuous Read Mode Reset - Dual
FFFFh
FFh
Up to 104 MHz
Up to 104 MHz
0
0
0
0
0
0
6.6
6.6
Continuous Read Mode Reset - Quad
Program and Erase Commands
Block Erase (4 Kbytes)
1111 1111
20h
52h
D8h
60h
C7h
02h
75h
7Ah
0010 0000
0101 0010
1101 1000
0110 0000
1100 0111
0000 0010
0111 0101
0111 1010
Up to 104 MHz
Up to 104 MHz
Up to 104MHz
Up to 104 MHz
Up to 104 MHz
Up to 104 MHz
Up to 104 MHz
Up to 104 MHz
3
3
3
0
0
3
0
0
0
0
0
0
0
0
0
0
0
0
Block Erase (32 Kbytes)
7.2
7.3
Block Erase (64 Kbytes)
0
0
Chip Erase
0
Byte/Page Program (1 to 256 Bytes)
Program/Erase Suspend
Program/Erase Resume
Protection Commands
Write Enable
1+
0
7.1
7.4
7.5
0
06h
04h
0000 0110
0000 0100
Up to 104 MHz
Up to 104 MHz
0
0
0
0
0
0
8.1
8.2
Write Disable
Security Commands
Erase Security Register Page
Program Security Register Page
Read Security Register Page
Status Register Commands
Read Status Register Byte 1
Read Status Register Byte 2
Write Status Register
44h
42h
48h
0100 0100
0100 0010
0100 1000
Up to 104 MHz
Up to 104 MHz
Up to 85MHz
3
3
3
0
0
1
0
9.1
9.2
9.3
1+
1+
05h
35h
01h
0000 0101
0011 0101
0000 0001
Up to 104 MHz
Up to 104 MHz
Up to 104 MHz
0
0
0
0
0
0
1
1
10.1
1 or 2
10.2
10.3
Write Enable for Volatile Status
Register
50h
0101 0000
Up to 104MHz
0
0
0
Miscellaneous Commands
AT25SF161
DS-25SF161–046H–8/2017
8
Table 5-1. Command Listing
Clock
Frequency
Address Dummy
Data
Bytes
Section
Link
Command
Opcode
1001 1111
Bytes
Bytes
Read Manufacturer and Device ID
Read ID
9Fh
90h
B9h
ABh
Up to 104MHz
Up to 104 MHz
Up to 104 MHz
Up to 104 MHz
0
0
0
0
0
3
0
0
3
2
0
0
11.1
11.2
11.3
11.4
1001 0000
1011 1001
1010 1011
Deep Power-Down
Resume from Deep Power-Down
Resume from Deep Power-Down and
Read ID
ABh
1010 1011
Up to 104 MHz
0
3
1
11.4
6.
Read Commands
6.1
Read Array (0Bh and 03h)
The Read Array command can be used to sequentially read a continuous stream of data from the device by simply
providing the clock signal once the initial starting address is specified. The device incorporates an internal address
counter that automatically increments every clock cycle.
Two opcodes (0Bh and 03h) can be used for the Read Array command. The use of each opcode depends on the
maximum clock frequency that will be used to read data from the device. The 0Bh opcode can be used at any clock
frequency up to the maximum specified by fCLK, and the 03h opcode can be used for lower frequency read operations up
to the maximum specified by fRDLF
.
To perform the Read Array operation, the CS pin must first be asserted and the appropriate opcode (0Bh or 03h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
starting address location of the first byte to read within the memory array. Following the three address bytes, an
additional dummy byte needs to be clocked into the device if the 0Bh opcode is used for the Read Array operation.
After the three address bytes (and the dummy byte if using opcode 0Bh) have been clocked in, additional clock cycles
will result in data being output on the SO pin. The data is always output with the MSB of a byte first. When the last byte
(1FFFFFh) of the memory array has been read, the device will continue reading back at the beginning of the array
(000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into high-impedance state. The CS pin can
be deasserted at any time and does not require a full byte of data be read.
Figure 6-1. Read Array - 03h Opcode
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AT25SF161
DS-25SF161–046H–8/2017
9
Figure 6-2. Read Array - 0Bh Opcode
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6.2
Dual-Output Read Array (3Bh)
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has
been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array command allows two
bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-Output Read Array operation, the CS pin must first be asserted and then the opcode 3Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SI pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SI pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
and SI pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (1FFFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the SO and SI pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
AT25SF161
DS-25SF161–046H–8/2017
1 0
Figure 6-3. Dual-Output Read Array
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21
SCK
Address Bits
M7-M0
Byte 1
Byte 2
Address Bits
A23-A16
A15-A8
A7-A0
M2 M0
D2 D0
D
A
22
A
20
A
18
A
16
A
14
A
A
0
1
M
6
7
M
4
D
6
7
D
4
5
6
7
I/O0
MSB
(SI)
M3 M1
D3 D1
D
I/O1
(SO)
A
23
A
21
A
19
A
17
A
15
A
A
M
M
5
D
D
MSB
6.3
Dual-I/O Read Array (BBh)
The Dual-I/O Read Array command is similar to the Dual-Output Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address
with two bits of address on each clock and two bits of data on every clock cycle.
The Dual-I/O Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-I/O Read Array operation, the CS pin must first be asserted and then the opcode BBh must be clocked
into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the location
of the first byte to read within the memory array. Following the three address bytes, a single mode byte must also be
clocked into the device.
After the three address bytes and the mode byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SI pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SI pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
and SI pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (1FFFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the SO and SI pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Figure 6-4. Dual I/O Read Array (Initial command or previous M5, M4≠1,0)
6.3.1 Dual-I/O Read Array (BBh) with Continuous Read Mode
The Fast Read Dual I/O command can further reduce instruction overhead through setting the Continuous Read Mode
bits (M7-0) after the input Address bits (A23-0), as shown in Figure 6-5. The upper nibble of the (M7-4) controls the
length of the next Fast Read Dual I/O command through the inclusion or exclusion of the first byte instruction code. The
lower nibble bits of the (M3-0) are don't care ("x"). However, the IO pins should be high-impedance prior to the falling
edge of the first data out clock. If the "Continuous Read Mode" bits M5-4 = (1,0), then the next Fast Read Dual I/O
command (after CS is raised and then lowered) does not require the BBH instruction code, as shown in Figure 15. This
reduces the command sequence by eight clocks and allows the Read address to be immediately entered after CS is
asserted low. If the "Continuous Read Mode" bits M5-4 do not equal to (1,0), the next command (after CS is raised and
AT25SF161
DS-25SF161–046H–8/2017
1 1
then lowered) requires the first byte instruction code, thus returning to normal operation. A Continuous Read Mode Reset
command can also be used to reset (M7-0) before issuing normal commands.
Figure 6-5. Dual-I/O Read Array (Previous command set M5, M4 = 1,0)
6.4
Quad-Output Read Array (6Bh)
The Quad-Output Read Array command is similar to the Dual-Output Read Array command. The Quad-Output Read
Array command allows four bits of data to be clocked out of the device on every clock cycle, rather than just one or two.
The Quad Enable bit (QE) of the Status Register must be set to enable for the Quad-Output Read Array instruction.
The Quad-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDQO. To
perform the Quad-Output Read Array operation, the CS pin must first be asserted and then the opcode 6Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on the I/O3-0 pins. The data is always output with the MSB of a byte first and the MSB is always output on the I/O3
pin. During the first clock cycle, bit 7 of the first data byte will be output on the I/O3 pin while bits 6, 5, and 4 of the same
data byte will be output on the I/O2, I/O1, and I/O0 pins, respectively. During the next clock cycle, bits 3, 2, 1, and 0 of the
first data byte will be output on the I/O3, I/O2, I/O1 and I/O0 pins, respectively.
The sequence continues with each byte of data being output after every two clock cycles. When the last byte (1FFFFFh)
of the memory array has been read, the device will continue reading from the beginning of the array (000000h). No
delays will be incurred when wrapping around from the end of the array to the beginning of the array.Deasserting the CS
pin will terminate the read operation and put the WP, HOLD, SO, SI pins into a high-impedance state. The CS pin can be
deasserted at any time and does not require that a full byte of data be read.
Figure 6-6. Quad-Output Read Array
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Byte 1 Byte 2 Byte 3 Byte 4 Byte 5
SCK
OUT
OUT
OUT
OUT
OUT
Opcode
Address Bits A23-A0
Don't Care
0
06%
1
1
0
1
0
1
1
A
06%
A
A
A
A
A
A
A
A
X
06%
X
X
X
X
X
X
X
D4 D0 D4 D0 D4 D0 D4 D0 D4 D0
D5 D1 D5 D1 D5 D1 D5 D1 D5 D1
D6 D2 D6 D2 D6 D2 D6 D2 D6 D2
I/O0
(SI)
High-impedance
High-impedance
High-impedance
I/O1
(SO)
I/O2
(WP)
D7 D3 D7 D3 D7 D3 D7 D3 D7 D3
I/O3
(HOLD)
MSB
MSB
MSB
MSB
MSB
6.5
Quad-I/O Read Array(EBh)
The Quad-I/O Read Array command is similar to the Quad-Output Read Array command. The Quad-I/O Read Array
command allows four bits of address to be clocked into the device on every clock cycle, rather than just one.
The Quad-I/O Read Array command can be used at any clock frequency, up to the maximum specified by fRDQO. To
perform the Quad-I/O Read Array operation, the CS pin must first be asserted and then the opcode EBh must be clocked
into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the location
AT25SF161
DS-25SF161–046H–8/2017
1 2
of the first byte to read within the memory array. Following the three address bytes, a single mode byte must also be
clocked into the device.
After the three address bytes, the mode byte and two dummy bytes have been clocked in, additional clock cycles will
result in data being output on the I/O3-0 pins. The data is always output with the MSB of a byte first and the MSB is always
output on the I/O3 pin. During the first clock cycle, bit 7 of the first data byte will be output on the I/O3 pin while bits 6, 5,
and 4 of the same data byte will be output on the I/O2, I/O1 and I/O0 pins, respectively. During the next clock cycle, bits 3,
2, 1, and 0 of the first data byte will be output on the I/O3, I/O2, I/O1 and I/O0 pins, respectively. The sequence continues
with each byte of data being output after every two clock cycles.
When the last byte (1FFFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the I/O3, I/O2, I/O1 and I/O0 pins into a high-
impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.The
Quad Enable bit (QE) of the Status Register must be set to enable for the Quad-I/O Read Array instruction.
Figure 6-7. Quad-I/O Read Array (Initial command or previous M5, M4 ≠ 1,0)
CS
0
1
2
1
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Opcode
A23-A16 A15-A8
A7-A0
M7-M0
Dummy
Byte 1
Byte 2
D0 D4
I/O
0
D
4
D
0
1
1
0
1
0
1
1
A
20
A
16
A
12
A
8
A4
A0 M4 M0
(SI)
MSB
D1 D5
D2 D6
D3 D7
D
5
D
1
I/O1
A
21
A
17
A
13
A
9
A
5
A1 M5 M1
(SO)
I/O2
D
6
D2
A
22
A
18
A
14
A
10
A
6
A2 M6 M2
(WP)
I/O3
D
7
D3
A
23
A
19
A
15
A
11
A
7
A3 M7 M3
(HOLD)
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCK
A23-A16 A15-A8
A7-A0
M7-M0
Dummy
Byte 1
Byte 2
I/O0
D0 D4
A20
A16
A
12
A
8
A4
A
0
M
4
M
0
D
4
D
0
(SI)
D1 D5
D2 D6
D3 D7
I/O1
A
21
A
17
A
13
A
9
A
5
A
1
M
5
M
1
D
5
D
1
(SO)
I/O2
A22
A18
A
14
A10
A
6
A
2
M
6
M
2
D
6
D2
(WP)
I/O3
A23
A19
A
15
A11
A
7
A
3
M
7
M
3
D
7
D3
(HOLD)
6.5.1 Quad-I/O Read Array (EBh) with Continuous Read Mode
The Fast Read Quad I/O command can further reduce instruction overhead through setting the Continuous Read Mode
bits (M7-0) after the input Address bits (A23-0), as shown in Figure 6-6. The upper nibble (M7-4) of the Continuous Read
Mode bits controls the length of the next Fast Read Quad I/O command through the inclusion or exclusion of the first byte
instruction code. The lower nibble bits (M3-0) of the Continuous Read Mode bits are don't care. However, the IO pins
AT25SF161
DS-25SF161–046H–8/2017
1 3
should be high-impedance prior to the falling edge of the first data out clock. If the Continuous Read Mode bits M5-4 =
(1,0), then the next Quad-I/O Read Array command (after CS is raised and then lowered) does not require the EBh
instruction code, as shown in Fig 6-8. This reduces the command sequence by eight clocks and allows the Read address
to be immediately entered after CS is asserted low. If the "Continuous Read Mode" bits M5-4 do not equal to (1,0), the
next command (after CS is raised and then lowered) requires the first byte instruction code, thus returning to normal
operation. A Continuous Read Mode Reset command can also be used to reset (M7-0) before issuing normal
commands.
Figure 6-8. Quad I/O Read Array with Continuous Read Mode (Previous Command Set M5-4 =1,0)
6.6
Continuous Read Mode Reset (FFh or FFFFh)
jz
W
X
Y
Z
[
\
]
^
zjr
zp
vwjvkl
1
tzi
1
1
1
1
1
1
1
DON’T CARE
zv
The Continuous Read Mode bits are used in conjunction with the Dual I/O Read Array and the Quad I/O Read Array
commands to provide the highest random Flash memory access rate with minimum SPI instruction overhead, thus
allowing more efficient XIP (execute in place) with this device family.
The "Continuous Read Mode" bits M7-0 are set by the Dual/Quad I/O Read Array commands. M5-4 are used to control
whether the 8-bit SPI instruction code (BBh or EBh) is needed or not for the next instruction. When M5-4 = (1,0), the next
instruction will be treated the same as the current Dual/Quad I/O Read Array command without needing the 8-bit
instruction code. When M5-4 do not equal (1,0), the device returns to normal SPI instruction mode, in which all
instructions can be accepted. M7-6 and M3-0 are reserved bits for future use; either 0 or 1 values can be used.
See Figure 6-9, the Continuous Read Mode Reset instruction (FFh or FFFFh) can be used to set M4 = 1, thus the device
will release the Continuous Read Mode and return to normal SPI operation.
To reset Continuous Read Mode during Quad I/O operation, only eight clocks are needed to shift in instruction FFh. To
reset Continuous Read Mode during Dual I/O operation, sixteen clocks are needed to shift in instruction FFFFh.
Figure 6-9. Continuous Read Mode Reset (Quad)
Figure 6-10. Continuous Read Mode Reset (Dual)
jz
W
X
Y
Z
[
\
]
^
8
9
10 11 12 13 14 15
zjr
zp
vwjvkl
1
MSB
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
DON’T CARE
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AT25SF161
DS-25SF161–046H–8/2017
1 4
7.
Program and Erase Commands
7.1
Byte/Page Program (02h)
The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of data to be programmed
into previously erased memory locations. An erased memory location is one that has all eight bits set to the logical “1”
state (a byte value of FFh). Before a Byte/Page Program command can be started, the Write Enable command must
have been previously issued to the device (see “Write Enable (06h)” on page 20) to set the Write Enable Latch (WEL) bit
of the Status Register to a logical “1” state.
To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device followed by the three
address bytes denoting the first byte location of the memory array to begin programming at. After the address bytes have
been clocked in, data can then be clocked into the device and will be stored in an internal buffer.
If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page boundary (A7-A0 are not all
0), then special circumstances regarding which memory locations to be programmed will apply. In this situation, any data
that is sent to the device that goes beyond the end of the page will wrap around back to the beginning of the same page.
For example, if the starting address denoted by A23-A0 is 0000FEh, and three bytes of data are sent to the device, then
the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the page (addresses 000001h through 0000FDh) will not be
programmed and will remain in the erased state (FFh). In addition, if more than 256 bytes of data are sent to the device,
then only the last 256 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate memory array locations based on the starting address specified by A23-A0 and the number of data bytes
sent to the device. If less than 256 bytes of data were sent to the device, then the remaining bytes within the page will not
be programmed and will remain in the erased state (FFh). The programming of the data bytes is internally self-timed and
should take place in a time of tPP or tBP if only programming a single byte.
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation and no data will be programmed into the memory array. In addition, if the memory is in the
protected state (see “Non-Volatile Protection” on page 21), then the Byte/Page Program command will not be executed,
and the device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will
be reset back to the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete
byte of data being sent, the CS pin being deasserted on uneven byte boundaries, or because the memory location to be
programmed is protected.
While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster
throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the
data bytes have finished programming. At some point before the program cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
Figure 7-1. Byte Program
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AT25SF161
DS-25SF161–046H–8/2017
1 5
Figure 7-2. Page Program
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7.2
Block Erase (20h, 52h, or D8h)
A block of 4, 32, or 64 Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of three
different opcodes for the Block Erase command. An opcode of 20h is used for a 4-Kbyte erase, an opcode of 52h is used
for a 32-Kbyte erase, or D8h is used for a 64-Kbyte erase. Before a Block Erase command can be started, the Write
Enable command must have been previously issued to the device to set the WEL bit of the Status Register to a logical “1”
state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h, 52h, or D8h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying an address within the
4- or 32- or 64-Kbyte block to be erased must be clocked in. Any additional data clocked into the device will be ignored.
When the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally self-
timed and should take place in a time of tBLKE
.
Since the Block Erase command erases a region of bytes, the lower order address bits do not need to be decoded by the
device. Therefore, for a 4-Kbyte erase, address bits A11-A0 will be ignored by the device and their values can be either a
logical “1” or “0”. For a 32-Kbyte erase, address bits A14-A0 will be ignored by the device. For a 64-Kbyte erase, address
bits A15-A0 will be ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must
be deasserted on an byte boundary (multiples of eight bits); otherwise, the device will abort the operation and no erase
operation will be performed.
If the memory is in the protected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
AT25SF161
DS-25SF161–046H–8/2017
1 6
Figure 7-3. Block Erase
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7.3
Chip Erase (60h or C7h)
The entire memory array can be erased in a single operation by using the Chip Erase command. Before a Chip Erase
command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit
of the Status Register to a logical “1” state.
Two opcodes (60h and C7h) can be used for the Chip Erase command. There is no difference in device functionality
when utilizing the two opcodes, so they can be used interchangeably. To perform a Chip Erase, one of the two opcodes
must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into
the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the device will erase
the entire memory array. The erasing of the device is internally self-timed and should take place in a time of tCHPE
.
The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on an byte boundary (multiples of eight bits); otherwise, no erase will be performed. In addition, if the memory
array is in the protected state, then the Chip Erase command will not be executed, and the device will return to the idle
state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to the logical “0” state
if the CS pin is deasserted on uneven byte boundaries or if the memory is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tCHPE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
Figure 7-4. Chip Erase
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7.4
Program/Erase Suspend (75h)
In some code plus data storage applications, it is often necessary to process certain high-level system interrupts that
require relatively immediate reading of code or data from the Flash memory. In such an instance, it may not be possible
for the system to wait the microseconds or milliseconds required for the Flash memory to complete a program or erase
AT25SF161
DS-25SF161–046H–8/2017
1 7
cycle. The Program/Erase Suspend command allows a program or erase operation in progress to be suspended so that
other device operations can be performed. For example, by suspending an erase operation to a particular block, the
system can perform functions such as a program or read to a different block.
Chip Erase cannot be suspended. The Program/Erase Suspend command will be ignored if it is issued during a Chip
Erase.A program operation can be performed while an erase operation is suspended, but the program operation cannot
be suspended while an erase operation is currently suspended.
Other device operations, such as a Read Status Register, can also be performed while a program or erase operation is
suspended. Table 7-4 outlines the operations that are allowed and not allowed during a program or erase suspend.
Since the need to suspend a program or erase operation is immediate, the Write Enable command does not need to be
issued prior to the Program/Erase Suspend command being issued. Therefore, the Program/Erase Suspend command
operates independently of the state of the WEL bit in the Status Register.
To perform a Program/Erase Suspend, the CS pin must first be asserted and the opcode of 75h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the program or erase operation currently in progress will be suspended within a time of
tSUSE. The Suspend (SUS) bit in the Write Status Register will be set to the logical "1" state to indicate that the program or
erase operation has been suspended. In addition, the RDY/BSY bit in the Status Register will indicate that the device is
ready for another operation. The complete opcode must be clocked into the device before the CS pin is deasserted, and
the CS pin must be deasserted on a byte boundary (multiples of eight bits). Otherwise, no suspend operation will be
performed.
If a read operation is attempted to a suspended area (page for programming or block for erasing), then the device will
output undefined data. Therefore, when performing a Read Array operation to an unsuspended area and the device's
internal address counter increments and crosses into the suspended area, the device will then start outputting undefined
data until the internal address counter crosses to an unsuspended area.
A program operation is not allowed to a block that has been erase suspended. If a program operation is attempted to an
erase suspended block, then the program operation will abort and the WEL bit in the Status Register will be reset back to
a logical "0" state. Likewise, an erase operation is not allowed to a block that included the page that has been program
suspended. If attempted, the erase operation will abort and the WEL bit in the Status Register will be reset to a logical "0"
state.
If an attempt is made to perform an operation that is not allowed during a program or erase suspend, such as a Write
Status Register operation, then the device will simply ignore the opcode and no operation will be performed. The state of
the WEL bit in the Status Register will not be affected.
Table 7-1. Operations Allowed and Not Allowed During a Program/Erase Suspend Command
Command
During Program Suspend
During Erase Suspend
Read Commands
Allowed (1)
Allowed(1)
Allowed(1)
Allowed(1)
Read Array (03h, 0Bh, 3Bh, BBh, 6Bh, EBh)
Continuous Read Reset (FFh)
Program and Erase Commands
Block Erase (20h, 52h, D8h)
Chip Erase (C7h, 60h)
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Allowed(1)
Not Allowed
Allowed
Byte/Page Program (02h)
Program/Erase Suspend (75h)
Program/Erase Resume (7Ah)
Protection Commands
Allowed
Allowed
Write Enable (06h)
AT25SF161
DS-25SF161–046H–8/2017
1 8
Table 7-1. Operations Allowed and Not Allowed During a Program/Erase Suspend Command
Command
During Program Suspend
Allowed
During Erase Suspend
Allowed
Write Disable (04h)
Security Commands
Not Allowed
Not Allowed
Allowed
Not Allowed
Not Allowed
Allowed
Erase Security Register Page (44h)
Program Security Register Page (42h)
Read Security Register Page (48h)
Status Register Commands
Read Status Register (05h, 35h)
Write Status Register (01h)
Allowed
Allowed
Not Allowed
Not Allowed
Not Allowed
Not Allowed
Volatile Write Enable Status Register (50h)
Miscellaneous Commands
Allowed
Allowed
Read Manufacturer and Device ID (9Fh)
Read ID (90h)
Allowed
Allowed
Not Allowed
Allowed (2)
Not Allowed
Allowed(2)
Deep Power-Down (B9h)
Resume from Deep Power-Down (ABh)
1. Allowed for all 64K-byte blocks other than the one currently suspended.
2. Allowed for reading Device ID.
Figure 7-5. Program/Erase Suspend
CS
0
1
2
3
4
5
6
7
SCK
SI
OPCODE
0
MS B
1
1
1
0
1
0
1
HIGH-IMPEDANCE
SO
7.5
Program/Erase Resume (7Ah)
The Program/Erase Resume command allows a suspended program or erase operation to be resumed and continue
programming a Flash page or erasing a Flash memory block where it left off. The Program/Erase Resume instruction will
be accepted by the device only if the SUS bit in the Write Status Register equals 1 and the RDY/BSY bit equals 0. If the
SUS bit equals 0 or the RDY/BSY bit equals to 1, the Program/Erase Resume command will be ignored by the device. As
with the Program/Erase Suspend command, the Write Enable command does not need to be issued prior to the
Program/Erase Resume command being issued. Therefore, the Program/Erase Resume command operates
independently of the state of the WEL bit in the Status Register.
To perform Program/Erase Resume, the CS pin must first be asserted and opcode 7Ah must be clocked into the device.
No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored. When the
CS pin is deasserted, the program or erase operation currently suspended will resume within a time of tRES. The SUS bit
AT25SF161
DS-25SF161–046H–8/2017
1 9
in the Status Register will then be reset back to the logical "0" state to indicate the program or erase operation is no
longer suspended. In addition, the RDY/BSY bit in the Status Register will indicate that the device is busy performing a
program or erase operation. The complete opcode must be clocked into the device before the CS pin is deasserted, and
the CS pin must be deasserted on a byte boundary (multiples of eight bits). Otherwise, no resume operation will perform.
During a simultaneous Erase Suspend/Program Suspend condition, issuing the Program/Erase Resume command will
result in the program operation resuming first. After the program operation has been completed, the Program/Erase
Resume command must be issued again in order for the erase operation to be resumed.
While the device is busy resuming a program or erase operation, any attempts at issuing the Program/Erase Suspend
command will be ignored. Therefore, if a resumed program or erase operation needs to be subsequently suspended
again, the system must either wait the entire tRES time before issuing the Program/Erase Suspend command, or it must
check the status of the RDY/BSY bit or the SUS bit in the Status Register to determine if the previously suspended
program or erase operation has resumed.
Figure 7-6. Program/Erase Resume.
0
1
2
3
4
5
6
7
SCK
SI
OPCODE
0
MS B
1
1
1
1
0
1
0
HIGH-IMPEDANCE
SO
8.
Protection Commands and Features
8.1
Write Enable (06h)
The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Register to a logical “1” state.
The WEL bit must be set before a Byte/Page Program, Erase, Program Security Register Pages, Erase Security Register
Pages or Write Status Register command can be executed. This makes the issuance of these commands a two step
process, thereby reducing the chances of a command being accidentally or erroneously executed. If the WEL bit in the
Status Register is not set prior to the issuance of one of these commands, then the command will not be executed.
To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be set to a logical “1”. The complete opcode must
be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an byte boundary
(multiples of eight bits); otherwise, the device will abort the operation and the WEL bit state will not change.
Figure 8-1. Write Enable
&6
ꢃ
ꢂ
ꢀ
ꢁ
ꢇ
ꢆ
ꢄ
ꢅ
6&.
6,
23&2'(
ꢃ
06%
ꢃ
ꢃ
ꢃ
ꢃ
ꢂ
ꢂ
ꢃ
+,*+ꢋ,03('$1&(
62
AT25SF161
DS-25SF161–046H–8/2017
2 0
8.2
Write Disable (04h)
The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Register to the logical “0”
state. With the WEL bit reset, all Byte/Page Program, Erase, Program Security Register Page, and Write Status Register
commands will not be executed. Other conditions can also cause the WEL bit to be reset; for more details, refer to the
WEL bit section of the Status Register description.
To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be reset to a logical “0”. The complete opcode
must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the WEL bit state will not change.
Figure 8-2. Write Disable
&6
ꢃ
ꢂ
ꢀ
ꢁ
ꢇ
ꢆ
ꢄ
ꢅ
6&.
6,
23&2'(
ꢃ
06%
ꢃ
ꢃ
ꢃ
ꢃ
ꢂ
ꢃ
ꢃ
+,*+ꢋ,03('$1&(
62
8.3
Non-Volatile Protection
The device can be software protected against erroneous or malicious program or erase operations by utilizing the Non-
Volatile Protection feature of the device. Non-Volatile Protection can be enabled or disabled by using the Write Status
Register command to change the value of the Protection (CMP, SEC, TB, BP2, BP1, BP0) bits in the Status Register.
The following table outlines the states of the Protection bits and the associated protection area.
Table 8-1. Memory Array with CMP=0
Protection Bits
Memory Content
SEC
X
0
TB
X
0
BP2
0
BP1
0
BP0
0
Address Range
None
Portion
None
0
0
1
1F0000h-1FFFFFh
1E0000h-1FFFFFh
1C0000h-1FFFFFh
180000h-1FFFFFh
100000h-10FFFFh
000000h-00FFFFh
000000h-01FFFFh
000000h-03FFFFh
000000h-07FFFFh
000000h-0FFFFFh
Upper 1/32
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
Lower 1/32
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
0
0
1
0
1
0
1
0
0
1
0
1
0
1
0
0
1
0
1
1
0
1
1
0
0
0
1
1
0
1
AT25SF161
DS-25SF161–046H–8/2017
2 1
Table 8-1. Memory Array with CMP=0
Protection Bits
Memory Content
X
1
1
1
1
1
1
1
1
X
0
0
0
0
1
1
1
1
1
0
0
0
1
0
0
0
1
1
0
1
1
0
0
1
1
0
X
1
0
1
X
1
0
1
X
000000h-1FFFFFh
1FF000h-1FFFFFh
1FE000h-1FFFFFh
1FC000h-1FFFFFh
1F8000h-1FFFFFh
000000h-000FFFh
000000h-001FFFh
000000h-003FFFh
000000h-007FFFh
ALL
Upper 1/512
Upper 1/256
Upper 1/128
Upper 1/64
Lower 1/512
Lower 1/256
Lower 1/128
Lower 1/64
Table 8-2. Memory Array Protection with CMP=1
Protection Bits
Memory Content
SEC
X
0
TB
X
0
0
0
0
0
1
1
1
1
1
X
0
0
0
0
1
BP2
0
BP1
0
BP0
0
Address Range
000000h-1FFFFFh
000000h-1EFFFFh
000000h-1DFFFFh
000000h-1BFFFFh
000000h-17FFFFh
000000h-0FFFFFh
010000h-1FFFFFh
020000h-1FFFFFh
040000h-1FFFFFh
080000H-1FFFFFH
100000H-1FFFFFH
NONE
Portion
All
0
0
1
Lower 31/32
Lower 15/16
Lower 7/8
0
0
1
0
0
0
1
1
0
1
0
0
Lower 3/4
0
1
0
1
Lower 1/2
0
0
0
1
Upper 31/32
Upper 15/16
Upper 7/8
0
0
1
0
0
0
1
1
0
1
0
0
Upper 3/4
0
1
0
0
Upper 1/2
X
1
1
1
X
1
NONE
0
0
000000h-1FEFFFh
000000h-1FDFFFh
000000h-1FBFFFh
000000h-1F7FFFh
001000h-1FFFFFh
Lower 511/512
Lower 255/256
Lower 127/128
Lower 63/64
Upper 511/512
1
0
1
0
1
0
1
1
1
1
0
X
1
1
0
0
AT25SF161
DS-25SF161–046H–8/2017
2 2
Protection Bits
Memory Content
1
1
1
1
1
1
0
0
1
1
1
0
0
1
X
002000h-1FFFFFh
004000h-1FFFFFh
008000h-1FFFFFh
Upper 255/256
Upper 127/128
Upper 63/64
As a safeguard against accidental or erroneous protecting or unprotecting of the memory array, the Protection can be
locked from updates by using the WP pin (see “Protected States and the Write Protect Pin” on page 22 for more details).
8.4
Protected States and the Write Protect Pin
The WP pin is not linked to the memory array itself and has no direct effect on the protection status of the memory array.
Instead, the WP pin, is used to control the hardware locking mechanism of the device.
If the WP pin is permanently connected to GND, then the protection bits cannot be changed.
9.
Security Register Commands
The device contains three extra pages called Security Registers that can be used for purposes such as unique device
serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. The Security Registers are
independent of the main Flash memory.
Each page of the Security Register can be erased and programmed independently. Each page can also be
independently locked to prevent further changes.
9.1
Erase Security Registers (44h)
Before an erase Security Register Page command can be started, the Write Enable command must have been
previously issued to the device to set the WEL bit of the Status Register to a logical "1" state.
To perform an Erase Security Register Page command, the CS pin must first be asserted and the opcode 44h must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying the Security Register
Page to be erased must be clocked in. When the CS pin is deasserted, the device will erase the appropriate block. The
erasing of the block is internally self-timed and should take place in a time of tBE
.
Since the Erase Security Register Page command erases a region of bytes, the lower order address bits do not need to
be decoded by the device. Therefore address bits A7-A0 will be ignored by the device. Despite the lower order address
bits not being decoded by the device, the complete three address bytes must still be clocked into the device before the
CS pin is deasserted, and the CS pin must be deasserted right after the last address bit (A0); otherwise, the device will
abort the operation and no erase operation will be performed.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the RDY/BSY bit in the
Status Register will be reset back to the logical "0" state.
The WEL bit in the Status Register will be reset back to the logical "0" state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected.
AT25SF161
DS-25SF161–046H–8/2017
2 3
The Security Registers Lock Bits (LB3-LB1) in the Status Register can be used to OTP protect the security registers.
Once a Lock Bit is set to 1, the corresponding Security Register will be permanently locked. The Erase Security Register
Page instruction will be ignored for Security Registers which have their Lock Bit set.
Table 9-1. Security Register Addresses for Erase Security Register Page Command
Address
A23-A16
A15-A8
A7-A0
Security Register 1
Security Register 2
Security Register 3
00H
00H
00H
01H
02H
03H
Don’t Care
Don’t Care
Don’t Care
Figure 9-1. Erase Security Register Page
&6
0
1
2
3
4
5
6
7
ꢉ
ꢈ
ꢀꢈ ꢁꢃ ꢁꢂ
6&.
6,
OPCODE
ꢀꢇꢋ%,7ꢊ$''5(66
ꢃ
MSB
ꢂ
ꢃ
ꢃ
ꢃ
ꢂ
ꢃ
ꢃ
$
$
$
$
$
9.2
Program Security Registers (42h)
The Program Security Registers command utilizes the internal 256-byte buffer for processing. Therefore, the contents of
the buffer will be altered from its previous state when this command is issued.
The Security Registers can be programmed in a similar fashion to the Program Array operation up to the maximum clock
frequency specified by fCLK. Before a Program Security Registers command can be started, the Write Enable command
must have been previously issued to the device (see “Write Enable (06h)” on page 20) to set the Write Enable Latch
(WEL) bit of the Status Register to a logical “1” state. To program the Security Registers, the CS pin must first be
asserted and the opcode of 42h must be clocked into the device. After the opcode has been clocked in, the three address
bytes must be clocked in to specify the starting address location of the first byte to program within the Security Register.
Table 9-2. Security Register Addresses for Program Security Registers Command
Address
A23-A16
00H
A15-A8
01H
A7-A0
Security Register 1
Security Register 2
Security Register 3
Byte Address
Byte Address
Byte Address
00H
02H
00H
03H
AT25SF161
DS-25SF161–046H–8/2017
2 4
Figure 9-2. Program Security Registers
&6
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38 39
6&.
6,
OPCODE
ADDRESS BITS A23-A0
DATA IN BYTE 1
DATA IN BYTE n
ꢃ
MS B
ꢂ
0
ꢃ
ꢃ
0
1
ꢃ
A
A
A
A
A
A
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
MS B
MS B
MS B
HIGH-IMPEDANCE
62
9.3
Read Security Registers (48h)
The Security Register can be sequentially read in a similar fashion to the Read Array operation up to the maximum clock
frequency specified by fCLK. To read the Security Register, the CS pin must first be asserted and the opcode of 48h must
be clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify
the starting address location of the first byte to read within the Security Register. Following the three address bytes, one
dummy byte must be clocked into the device before data can be output.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in Security
Register data being output on the SO pin. When the last byte (0003FFh) of the Security Register has been read, the
device will continue reading back at the beginning of the register (000000h). No delays will be incurred when wrapping
around from the end of the register to the beginning of the register.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can
be deasserted at any time and does not require that a full byte of data be read.
Table 9-3. Security Register Addresses for Read Security Registers Command
Address
A23-A16
00H
A15-A8
01H
A7-A0
Security Register 1
Security Register 2
Security Register 3
Byte Address
Byte Address
Byte Address
00H
02H
00H
03H
Figure 9-3. Read Security Registers
&6
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36
6&.
6,
OPCODE
ADDRESS BITS A23-A0
DON'T CARE
0
1
ꢃ
ꢃ
ꢂ
ꢃ
ꢃ
ꢃ
A
A
A
A
A
A
A
A
A
X
X
X
X
X
X
X
X
X
MS B
MS B
MS B
DATA BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
62
MS B
MS B
AT25SF161
DS-25SF161–046H–8/2017
2 5
10. Status Register Commands
10.1 Read Status Register (05h and 35h)
The Status Register can be read to determine the device's ready/busy status, as well as the status of many other
functions such as Block Protection. The Status Register can be read at any time, including during an internally self-timed
program or erase operation.
To read Status Register Byte 1, the CS pin must first be asserted and the opcode of 05h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register Byte 1 data on the SO pin during
every subsequent clock cycle. After the last bit (bit 0) of Status Register Byte 1 has been clocked out, the sequence will
repeat itself starting again with bit 7 as long as the CS pin remains asserted and the clock pin is being pulsed. The data
in the Status Register is constantly being updated, so each repeating sequence will output new data. Deasserting the CS
pin will terminate the Read Status Register operation and put the SO pin into a high-impedance state. The CS pin can be
deasserted at any time and does not require that a full byte of data be read.
To read Status Register Byte 2, the CS pin must first be asserted and the opcode of 35h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register Byte 2 data on the SO pin during
every subsequent clock cycle. After the last bit (bit 0) of Status Register Byte 2 has been clocked out, the sequence will
repeat itself starting again with bit 7 as long as the CS pin remains asserted and the clock pin is being pulsed. The data
in the Status Register is constantly being updated, so each repeating sequence will output new data. Deasserting the CS
pin will terminate the Read Status Register operation and put the SO pin into a high-impedance state. The CS pin can be
deasserted at any time and does not require that a full byte of data be read.
Table 10-1. Status Register Format - Byte 1
Bit(1)
Name
Type(2)
Description
7
6
5
4
3
2
SRP0
SEC
TB
Status Register Protection bit-0
Block Protection
R/W
R/W
R/W
R/W
R/W
R/W
See Table 10-3 on Status Register Protection
See Table 8-1 and 8-2 on Non-Volatile Protection
See Table 8-1 and 8-2 on Non-Volatile Protection
See Table 8-1 and 8-2 on Non-Volatile Protection
See Table 8-1 and 8-2 on Non-Volatile Protection
See Table 8-1 and 8-2 on Non-Volatile Protection
Device is not Write Enabled (default)
Top or Bottom Protection
Block Protection bit-2
Block Protection bit-1
Block Protection bit-0
BP2
BP1
BP0
0
1
0
1
1
WEL
Write Enable Latch Status
Ready/Busy Status
R
R
Device is Write Enabled
Device is ready
0
RDY/BSY
Device is busy with an internal operation
Notes:
1. Only bits 7 through 2 of the Status Register can be modified when using the Write Status Register command.
2. R/W = Readable and writable
R = Readable only
Figure 10-1. Read Status Register Byte 1
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
SCK
SI
23&2'(
0
0
0
0
0
1
0
1
MS B
67$786ꢊ5(*,67(5
67$786ꢊ5(*,67(5
67$786ꢊ5(*,67(5
BYTE 1
BYTE 1
BYTE 1
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
SO
MS B
MS B
MS B
AT25SF161
DS-25SF161–046H–8/2017
2 6
Table 10-2. Status Register Format – Byte 2
Bit(1)
Name
Type(2)
R
Description
0
1
0
0
1
0
1
0
1
0
0
1
Device is not suspended (default)
7
6
5
SUS
CMP
LB3
Suspend Status
Device is suspended from erase
Complement Block Protection
Lock Security Register 3
R/W
R/W
See table on Block Protection
Security Register page-3 is not locked (default)
Security Register page-3 cannot be erased/programmed
Security Register page-2 is not locked (default)
Security Register page-2 cannot be erased/programmed
Security Register page-1 is not locked (default)
Security Register page-1 cannot be erased/programmed
Reserved for future use
4
LB2
Lock Security Register 2
R/W
3
2
1
LB1
RES
QE
Lock Security Register 1
Reserved for future use
Quad Enable
R/W
R
HOLD and WP function normally (default)
HOLD and WP are I/O pins
R/W
R/W
0
SRP1
Status Register Protect bit-1
See table on Status Register Protection
Notes:
1. Only bits 6 through 3, 1, and 0 of the Status Register can be modified when using the Write Status Register command
2. R/W = Readable and writable
R = Readable only.
Figure 10-2. Read Status Register Byte 2
CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
SCK
SI
23&2'(
0
0
ꢂ
ꢂ
0
1
0
1
MS B
67$786ꢊ5(*,67(5
67$786ꢊ5(*,67(5
67$786ꢊ5(*,67(5
BYTE 2
BYTE 2
BYTE 2
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
SO
MS B
MS B
MS B
AT25SF161
DS-25SF161–046H–8/2017
2 7
10.1.1 SRP1, SRP0 Bits
The SRP1 and SRP0 bits control whether the Status Register can be modified. The state of the WP pin along with the
values of the SRP1 and SRP0 determine if the device is software protected, hardware protected, or permanently
protected (see Table 10-3).
Table 10-3. Status Register Protection Table
SRP1
SRP0
WP
X
Status Register
Description
The Status Register can be written to after a Write Enable
instruction, WEL=1.(Factory Default)
0
0
0
0
1
1
Software Protected
Hardware Protected
0
WP=0, the Status Register is locked and cannot be written.
Hardware
Unprotected
WP =1, the Status Register is unlocked and can be written to
after a Write Enable instruction, WEL=1.
1
Power Supply Lock-
Down (1)
Status Register is protected and cannot be written to again
until the next Power-Down, Power-Up cycle.
1
1
0
1
X
X
Status Register is permanently protected and cannot be
written to.
One Time Program
1. When SRP1, SRP0 = (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to the (0, 0) state.
10.1.2 CMP, SEC, TB, BP2, BP1, BP0 Bits
The CMP, SEC, TB, BP2, BP1, and BP0 bits control which portions of the array are protected from erase and program
operations (see Tables 8-1 and 8-2).
The CMP bit complements the effect of the other bits.
The SEC bit selects between large and small block size protection.
The TB bit selects between top of the array or bottom of the array protection.
The BP2, BP1, and BP0 bits determine how much of the array is protected.
10.1.3 WEL Bit
The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is in the logical “0” state,
the device will not accept any Byte/Page Program, erase, Program Security Register, Erase Security Register, or Write
Status Register commands. The WEL bit defaults to the logical “0” state after a device power-up or reset operation. In
addition, the WEL bit will be reset to the logical “0” state automatically under the following conditions:
Write Disable operation completes successfully
Write Status Register operation completes successfully or aborts
Program Security Register operation completes successfully or aborts
Erase Security Register operation completes successfully or aborts
Byte/Page Program operation completes successfully or aborts
Block Erase operation completes successfully or aborts
Chip Erase operation completes successfully or aborts
If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts due to an incomplete or
unrecognized opcode being clocked into the device before the CS pin is deasserted. In order for the WEL bit to be reset
when an operation aborts prematurely, the entire opcode for a Byte/Page Program, erase, Program Security Register,
Erase Security Register, or Write Status Register command must have been clocked into the device.
AT25SF161
DS-25SF161–046H–8/2017
2 8
10.1.4 RDY/BSY Bit
The RDY/BSY bit is used to determine whether or not an internal operation, such as a program or erase, is in progress.
To poll the RDY/BSY bit to detect the completion of a program or erase cycle, new Status Register data must be
continually clocked out of the device until the state of the RDY/BSY bit changes from a logical “1” to a logical “0”.
10.1.5 SUS Bit
The SUS bit is used to determine whether an erase operation has been suspended. If the SUS bit is in the logical “1”
state, then an erase operation has been started and suspended.
10.1.6 LB3, LB2, LB1 Bits
The LB3, LB2, and LB1 bits are used to determine if any of the three Security Register pages are locked.
The LB3 bit is in the logical “1” state if Security Register page-2 is locked and cannot be erased or programmed.
The LB2 bit is in the logical “1” state if Security Register page-1 is locked and cannot be erased or programmed.
The LB1 bit is in the logical “1” state if Security Register page-0 is locked and cannot be erased or programmed.
10.1.7 QE Bit
The QE bit is used to determine if the device is in the Quad Enabled mode. If the QE bit is in the logical “1” state, then the
HOLD and WP pins functions as input/output pins similar to the SI and SO. If the QE bit is in the logical “0” state, then the
HOLD pin functions as an input only and the WP pin functions as an input only.
10.2 Write Status Register (01h)
The Write Status Register command is used to modify the Block Protection, Security Register Lock-down, Quad Enable,
and Status Register Protection. Before the Write Status Register command can be issued, the Write Enable command
must have been previously issued to set the WEL bit in the Status Register to a logical “1”.
To issue the Write Status Register command, the CS pin must first be asserted and the opcode of 01h must be clocked
into the device followed by one or two bytes of data. The first byte of data consists of the SRP0, SEC, TB, BP2, BP1, BP0
bit values and 2 dummy bits. The second byte is optional and consists of 1 dummy bit, the CMP, LB3, LB2, LB1, 1
dummy bit, the QE, and 1 dummy bit. When the CS pin is deasserted, the bit values in the Status Register will be
modified, and the WEL bit in the Status Register will be reset back to a logical “0”.
The complete one byte or two bytes of data must be clocked into the device before the CS pin is deasserted, and the CS
pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation,
the state of the Status Register bits will not change, memory protection status will not change, and the WEL bit in the
Status Register will be reset back to the logical “0” state
Table 10-4. Write Status Register Format.
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
SRPO
SEC
TB
BP2
BP1
BP0
WEL
RDY/BSY
AT25SF161
DS-25SF161–046H–8/2017
2 9
Figure 10-3. Write Status Register
CS
0
0
1
0
2
0
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCK
Opcode
Status Register In - Byte 1
Status Register In - Byte 2
SI
0
0
0
0
1
D
MSB
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
MSB
High-Impedance
SO
Table 10-5. Write Status Register Byte 2
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
reserved
Bit 1
Bit 0
reserved
CMP
LB3
LB2
LB1
QE
SRP1
10.3 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in Table 10-1 and Table 10-2 can also be written to as volatile bits. During
power up reset, the non-volatile Status Register bits are copied to a volatile version of the Status Register that is used
during device operation. This gives more flexibility to change the system configuration and memory protection schemes
quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits.
To write the volatile version of the Status Register bits, the Write Enable for Volatile Status Register (50h) instruction
must be issued prior to each Write Status Registers (01h) instruction. Write Enable for Volatile Status Register instruction
will not set the Write Enable Latch bit. It is only valid for the next following Write Status Registers instruction, to change
the volatile Status Register bit values.
Figure 10-4. Write Enable for Volatile Status Register
&6
0
1
2
3
4
5
6
7
6&.
6,
OPCODE
ꢃ
MSB
ꢂ
ꢃ
ꢂ
ꢃ
ꢃ
ꢃ
ꢃ
HIGH-IMPEDANCE
62
AT25SF161
DS-25SF161–046H–8/2017
3 0
11. Other Commands and Functions
The AT25SF161 supports three different commands to access device identification that indicates the manufacturer,
device type, and memory density. The returned data bytes provide information as shown in Table 11-1.
Table 11-1. Manufacturer and Device ID Information
Dummy Manufacturer
Device ID
(Byte #2)
Device ID
(Byte #3)
Instruction
Opcode
9Fh
Bytes
ID (Byte #1)
Read Manufacturer and Device ID
Read ID (Legacy Command)
0
3
1Fh
86h
01h
14h
90h
1Fh
Resume from Deep Power-Down and
Read Device ID
ABh
3
14h
11.1 Read Manufacturer and Device ID (9Fh)
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in system.
Since not all Flash devices are capable of operating at very high clock frequencies, applications should be designed to
read the identification information from the devices at a reasonably low clock frequency to ensure all devices used in the
application can be identified properly. Once the identification process is complete, the application can increase the clock
frequency to accommodate specific Flash devices that are capable of operating at the higher clock frequencies.
To read the identification information, the CS pin must first be asserted and the opcode of 9Fh must be clocked in. After
the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the
subsequent clock cycles. The first byte that will be output will be the Manufacturer ID followed by two bytes of Device ID
information. Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and put the SO pin into
a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Table 11-2. Manufacturer and Device ID Information
Byte No.
Data Type
Value
1Fh
1
2
3
Manufacturer ID
Device ID (Part 1)
Device ID (Part 2)
86h
01h
Table 11-3. Manufacturer and Device ID Details
Hex
Data Type
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Value
Details
JEDEC Assigned Code
Manufacturer ID
1Fh
86h
01h
JEDEC Code: 0001 1111 (1Fh for Adesto)
0
1
0
0
0
0
0
1
0
0
1
0
1
1
1
0
1
Family Code
Density Code
1
Family Code:100 (AT25SFxxx series)
Density Code: 0110 (16-Mbit)
Device ID (Part 1)
Device ID (Part 2)
0
Sub Code
0
1
Product Version Code
Sub Code: 000 (Standard series)
Product Version: 00001
0
0
0
AT25SF161
DS-25SF161–046H–8/2017
3 1
Figure 11-1. Read Manufacturer and Device ID
CS
0
6
7
8
14 15 16
22 23 24
30 31 32
SCK
SI
OPCODE
9Fh
HIGH-IMPEDANCE
1Fh
86h
01h
SO
MANUFACTURER ID
DEVICE ID
BYTE1
DEVICE ID
BYTE2
Note: Each transition
shown for SI and SO represents one byte (8 bits)
11.2 Read ID (Legacy Command) (90h)
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in system. The preferred method for doing so is the JEDEC standard “Read Manufacturer and Device ID (9Fh)”
method described in Section 11.1 on page 30; however, the legacy Read ID command is supported on the AT25SF161
to enable backwards compatibility to previous generation devices.
To read the identification information, the CS pin must first be asserted and the opcode of 90h must be clocked into the
device, followed by three dummy bytes. After the opcode has been clocked in followed by three dummy bytes, the device
will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte that will be
output will be the Manufacturer ID of 1Fh followed by a single byte of data representing a device code of 14h. After the
device code is output, the sequence of bytes will repeat.
Deasserting the CS pin will terminate the Read ID operation and put the SO pin into a high-impedance state. The CS pin
can be deasserted at any time and does not require that a full byte of data read.
Figure 11-2. Read ID (Legacy Command)
&6
0
1
2
3
4
5
6
7
29 30 31 32 33 34 35 36 37 38 39
6&.
6,
OPCODE
ꢁꢊ'800<ꢊ%<7(6
1
0
ꢃ
ꢂ
ꢃ
0
ꢃ
ꢃ
X
X
X
X
X
MSB
'(9,&(ꢊ,'
HIGH-IMPEDANCE
D
D
D
D
D
D
D
D
62
MSB
11.3 Deep Power-Down (B9h)
During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin
remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to place
the device into an even lower power consumption state called the Deep Power-Down mode.
AT25SF161
DS-25SF161–046H–8/2017
3 2
When the device is in the Deep Power-Down mode, all commands including the Read Status Register command will be
ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be ignored, the
mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode of B9h,
and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the
CS pin is deasserted, the device will enter the Deep Power-Down mode within the maximum time of tEDPD
.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode once the
CS pin is deasserted. In addition, the device will default to the standby mode after a power-cycle.
The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is
in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been
completed in order for the device to enter the Deep Power-Down mode.
Figure 11-3. Deep Power-Down
&6
W('3'
ꢃ
ꢂ
ꢀ
ꢁ
ꢇ
ꢆ
ꢄ
ꢅ
6&.
6,
23&2'(
ꢂ
06%
ꢃ
ꢂ
ꢂ
ꢂ
ꢃ
ꢃ
ꢂ
+,*+ꢋ,03('$1&(
62
$FWLYHꢊ&XUUHQW
,
&&
6WDQGE\ꢊ0RGHꢊ&XUUHQW
'HHSꢊ3RZHUꢋ'RZQꢊ0RGHꢊ&XUUHQW
11.4 Resume from Deep Power-Down (ABh)
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-Down
command must be issued. The Resume from Deep Power-Down command is the only command that the device will
recognize while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first be asserted and the opcode of ABh must be clocked
into the device. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is
deasserted, the device will exit the Deep Power-Down mode within the maximum time of tRDPD and return to the standby
mode. After the device has returned to the standby mode, normal command operations such as Read Array can be
resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an byte
boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down mode.
AT25SF161
DS-25SF161–046H–8/2017
3 3
Figure 11-4. Resume from Deep Power-Down
&6
tRDPD
0
1
2
3
4
5
6
7
6&.
6,
OPCODE
1
0
1
0
1
0
1
1
MS B
HIGH-IMPEDANCE
Active Current
62
,
&&
Standby Mode Current
Deep Power-Down Mode Current
11.4.1 Resume from Deep Power-Down and Read Device ID (ABh)
The Resume from Deep Power-Down command can also be used to read the Device ID.
When used to release the device from the Power-Down state and obtain the Device ID, the CS pin must first be asserted
and opcode of ABh must be clocked into the device, followed by 3 dummy bytes. The Device ID bits are then shifted out
on the falling edge of SCLK with most significant bit (MSB) first as shown in Figure 11-4. This command only outputs a
single byte Device ID. The Device ID value for the AT25SF161 is listed in Table 11-1.
After the last bit (bit 0) of the Device ID has been clocked out, the sequence will repeat itself starting again with bit 7 as
long as the CS pin remains asserted and the SCK pin is being pulsed. After CS is deasserted it must remain high for a
time duration of tRDPO before new commands can be received.
The same instruction may be used to read device ID when not in power down. In that case, /CS does not have to remain
high remain after it is deasserted.
Figure 11-5. Resume from Deep Power-Down and Read Device ID
&6
0
1
2
3
4
5
6
7
29 30 31 32 33 34 35 36 37 38 39
6&.
6,
OPCODE
ꢁꢊ'800<ꢊ%<7(6
W5'32
1
0
1
0
1
0
1
1
X
X
X
X
X
MSB
'(9,&(ꢊ,'
HIGH-IMPEDANCE
Active Current
D
MSB
D
D
D
D
D
D
D
62
,
&&
6WDQGE\ꢊ0RGHꢊ&XUUHQW
'HHSꢊ3RZHUꢋ'RZQꢊ0RGHꢊ&XUUHQW
AT25SF161
DS-25SF161–046H–8/2017
3 4
11.5 Hold Function
The HOLD pin is used to pause the serial communication with the device without having to stop or reset the clock
sequence. The Hold mode, however, does not have an affect on any internally self-timed operations such as a program
or erase cycle. Therefore, if an erase cycle is in progress, asserting the HOLD pin will not pause the operation, and the
erase cycle will continue until it is finished.
If the QE bit value in the Status Register has been set to logical “1”, then the HOLD pin does not function as a control pin.
The HOLD pin will function as an output for Quad-Output Read and input/output for Quad-I/O Read.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated simply by asserting the
HOLD pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse, then the Hold mode won’t be
started until the beginning of the next SCK low pulse. The device will remain in the Hold mode as long as the HOLD pin
and CS pin are asserted.
While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the SCK pin will be
ignored. The WP pin, however, can still be asserted or deasserted while in the Hold mode.
To end the Hold mode and resume serial communication, the HOLD pin must be deasserted during the SCK low pulse. If
the HOLD pin is deasserted during the SCK high pulse, then the Hold mode won’t end until the beginning of the next SCK
low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be
aborted, and the device will reset the WEL bit in the Status Register back to the logical “0” state.
Figure 11-6. Hold Mode
CS
SCK
HOLD
Hold
Hold
Hold
AT25SF161
DS-25SF161–046H–8/2017
3 5
12. Electrical Specifications
12.1 Absolute Maximum Ratings*
*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other
Temperature under Bias. . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . -65°C to +150°C
conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended
periods may affect device reliability.
All Input Voltages (including NC Pins)
with Respect to Ground . . . . . . . . . . . . . . -0.6V to +4.1V
All Output Voltages
with Respect to Ground . . . . . . . . . . -0.6V to VCC + 0.5V
12.2 DC and AC Operating Range
AT25SF161
Operating Temperature (Case)
VCC Power Supply
Industrial
-40°C to 85°C
2.5V to 3.6V
12.3 DC Characteristics
2.5V to 3.6V
Symbol
Parameter
Condition
Min
Typ
Max
Units
CS, HOLD, WP = VIH
All inputs at CMOS levels
IDPD
Deep Power-Down Current
2
5
µA
CS, HOLD, WP = VIH
All inputs at CMOS levels
ISB
Standby Current
13
3
25
6
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
f = 20MHz; IOUT = 0mA
f = 50MHz; IOUT = 0mA
f = 85MHz; IOUT = 0mA
f = 50MHz; IOUT = 0mA
f = 85MHz; IOUT = 0mA
f = 50MHz; IOUT = 0mA
f = 85MHz; IOUT = 0mA
CS = VCC
(1)
ICC1
Active Current, Read (03h,
0Bh) Operation
4
7
5
8
5
8
Active Current,(3Bh, BBh
Read Operation (Dual)
(1)
ICC2
6
10
10
12
16
16
6
Active Current,(6Bh, EBh
Read Operation (Quad)
(1)
ICC3
8
Active Current,
Program Operation
(1)
ICC4
10
10
Active Current,
Erase Operation
(1)
ICC5
CS = VCC
AT25SF161
DS-25SF161–046H–8/2017
3 6
2.5V to 3.6V
Symbol
Parameter
Condition
Min
Typ
Max
Units
ILI
Input Load Current
All inputs at CMOS levels
1
1
µA
ILO
Output Leakage Current
Input Low Voltage
All inputs at CMOS levels
1
1
µA
V
VIL
VCC x 0.3
VIH
Input High Voltage
Output Low Voltage
Output High Voltage
VCC x 0.7
V
V
V
VOL
VOH
IOL = 1.6mA; VCC = 2.5V
IOH = -100µA
0.4
VCC - 0.2V
1.
Typical values measured at 3.0V @ 25°C for the 2.5V to 3.6V range
12.4 AC Characteristics - Maximum Clock Frequencies
2.5V to 3.6V
Typ
2.7V to 3.6V
Symbol
Parameter
Min
Max
Min
Typ
Max
Units
Maximum Clock Frequency for All Operations
(excluding 0Bh opcode)
fCLK
104
104
MHz
fRDLF
fRDHF
Maximum Clock Frequency for 03h Opcode
50
70
50
85
MHz
MHz
Maximum Clock Frequency for 0Bh Opcode
Maximum Clock Frequency for 3B, BBh
Opcode
fRDDO
fRDQO
70
70
85
85
MHz
MHz
Maximum Clock Frequency for 6B, EBh
Opcode
12.5 AC Characteristics - All Other Parameters
2.5V to 3.6V
Typ
2.7V to 3.6V
Typ Max
Symbol
tCLKH
Parameter
Units
ns
Min
5
Max
Min
Clock High Time
5
5
tCLKL
Clock Low Time
5
ns
(1)
tCLKR
Clock Rise Time, Peak-to-Peak (Slew Rate)
Clock Fall Time, Peak-to-Peak (Slew Rate)
Chip Select High Time
0.1
0.1
10
5
0.1
0.1
10
5
V/ns
V/ns
ns
(1)
tCLKF
tCSH
tCSLS
tCSLH
tCSHS
Chip Select Low Setup Time (relative to Clock)
Chip Select Low Hold Time (relative to Clock)
Chip Select High Setup Time (relative to Clock)
ns
5
5
ns
5
5
ns
AT25SF161
DS-25SF161–046H–8/2017
3 7
12.5 AC Characteristics - All Other Parameters
2.5V to 3.6V
Typ
2.7V to 3.6V
Typ
Symbol
tCSHH
tDS
Parameter
Units
ns
Min
5
Max
Min
5
Max
Chip Select High Hold Time (relative to Clock)
Data In Setup Time
2
2
ns
tDH
Data In Hold Time
2
2
ns
(1)
tDIS
Output Disable Time
7
7
7
8
6
6
7
8
ns
Output Valid Time (03h, 0Bh)
Output Valid Time (3Bh, BBh - Dual)
Output Valid Time (6Bh, EBh - Quad)
Output Hold Time
ns
tV
tOH
0
5
5
5
5
0
5
5
5
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
tHLS
tHLH
tHHS
tHHH
HOLD Low Setup Time (relative to Clock)
HOLD Low Hold Time (relative to Clock)
HOLD High Setup Time (relative to Clock)
HOLD High Hold Time (relative to Clock)
HOLD Low to Output High-Z
HOLD High to Output High-Z
Write Protect Setup Time
(1)
tHLQZ
6
6
6
6
(1)
tHHQZ
(1) (2)
tWPS
20
20
(1)(2)
tWPH
Write Protect Hold Time
100
100
(1)
tEDPD
Chip Select High to Deep Power-Down
Chip Select High to Standby Mode
Resume Deep Power-Down, CS High to ID
Suspend, Program or Erase
Resume, Program or Erase
1
5
1
5
(1)
tRDPD
(1)
tRDPO
5
5
(1)
tSUSE
15
5
15
5
(1)
tRESE
1. Not 100% tested (value guaranteed by design and characterization).
2. Only applicable as a constraint for the Write Status Register command when BPL = 1.
12.6 Program and Erase Characteristics
2.5 to 3.6V
2.7V to 3.6V
Symbol
Parameter
Min
Typ
0.7
5
Max
Min
Typ
0.7
5
Max
Units
ms
(1)
tPP
Page Program Time (256 Bytes)
Byte Program Time
5
2.5
tBP
µs
4 Kbytes
60
300
1300
3000
25
60
300
1300
3000
25
(1)
tBLKE
Block Erase Time
Chip Erase Time
32 Kbytes
64 K bytes
300
500
15
300
500
15
ms
(1) (2)
tCHPE
sec
AT25SF161
DS-25SF161–046H–8/2017
3 8
12.6 Program and Erase Characteristics
2.5 to 3.6V
Typ
2.7V to 3.6V
Symbol
Parameter
Min
Max
2.5
15
Min
Typ
Max
2.5
15
Units
ms
(1)
tSRP
Security Register Program Time
Security Register Erase Time
Write Status Register Time
(1)
tSRP
ms
(2)
tWRSR
15
15
ms
1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
12.7 Power-Up Conditions
Symbol
tVCSL
Parameter
Min
Max
Units
µs
Minimum VCC to Chip Select Low Time
Power-up Device Delay Before Program or Erase Allowed
Power-on Reset Voltage
20
tPUW
10
ms
V
VPOR
2.3
AT25SF161
DS-25SF161–046H–8/2017
3 9
12.8 Input Test Waveforms and Measurement Levels
0.9VCC
AC
AC
DRIVING
LEVELS
VCC/2
MEASUREMENT
LEVEL
0.1VCC
tR, tF < 2 ns (10% to 90%)
12.9 Output Test Load
Device
Under
Test
30pF
13. AC Waveforms
Figure 13-1. Serial Input Timing
W&6+
&6
6&.
6,
W&6/6
W&6/+
W&/./
W&6++
W&/.+
W&6+6
W'6
W'+
06%
/6%
06%
+,*+ꢋ,03('$1&(
62
Figure 13-2. Serial Output Timing
&6
W&/.+
W&/./
W',6
6&.
6,
W2+
W9
W9
62
AT25SF161
DS-25SF161–046H–8/2017
4 0
Figure 13-3. WP Timing for Write Status Register Command When BPL = 1
CS
tWPS
tWPH
WP
SCK
SI
0
0
0
X
MSB
MSB OF
WRITE STATUS REGISTER
OPCODE
LSB OF
WRITE STATUS REGISTER
DATA BYTE
MSB OF
NEXT OPCODE
HIGH-IMPEDANCE
SO
Figure 13-4. HOLD Timing – Serial Input
CS
SCK
tHHH
tHLS
tHLH
tHHS
HOLD
SI
HIGH-IMPEDANCE
SO
Figure 13-5. HOLD Timing – Serial Output
CS
SCK
tHHH
tHLS
tHLH
tHHS
HOLD
SI
tHLQZ
SO
tHHQX
AT25SF161
DS-25SF161–046H–8/2017
4 1
14. Ordering Information
14.1 Ordering Code Detail
A T 2 5 S F 1 6 1 – S S H D – B
Designator
Shipping Carrier Option
B = Bulk (tubes)
T = Tape and reel
Product Family
Operating Voltage
D = 2.5V to 3.6V
Device Density
16 = 16-megabit
Device Grade
H
= Green, NiPdAu lead finish,
Industrial temperature range
(–40°C to +85°C)
U = Green, Matte Sn or Sn alloy,
Industrial temperature range
(–40°C to +85°C)
P = Green, NiPdAu lead finish, non-
conductive silver-free die attach
material industrial temperature
range (-40 to +85°C)
Interface
1 = Serial
Package Option
M = 8-pad, 5 x 6 x 0.6 mm UDFN
SS = 8-lead, 0.150" wide SOIC
S = 8-lead, 0.208" wide SOIC
U = 8-ball 0.5mm pitch dBGA
DWF = Die In Wafer Form
Max. Freq.
Ordering Code (1)
AT25SF161-SSHD-B
AT25SF161-SSHD-T
AT25SF161-SSPD-T (2) (3)
AT25SF161-SHD-B
AT25SF161-SHD-T
AT25SF161-MHD-T
AT25SF161-UUD-T(3)
AT25SF161-DWF (4)
Package
Operating Voltage
(MHz)
Operation Range
8S1
Industrial
8S2
2.5V to 3.6V
104MHz
(-40°C to +85°C)
8MA1
8-WLCSP
DWF
1. The shipping carrier option code is not marked on the devices.
2. This product is manufactured with non-conductive silver-free epoxy internal materials for extreme conditions applications.
3. Contact Adesto for availability.
4. Contact Adesto for mechanical drawing or Die Sales information.
AT25SF161
DS-25SF161–046H–8/2017
4 2
Package Type
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.208" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-pad (5 x 6 x 0.6mm body), Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead (UDFN)
8-ball, 0.5mm pitch, die Ball Grid Array (dBGA)
8S1
8S2
8MA1
8-WLCSP
DWF
Die In Wafer Form
AT25SF161
DS-25SF161–046H–8/2017
4 3
15. Packaging Information
15.1 8S1 – 8-lead, .150” JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.05
3.99
6.20
C
D
E1
E
e
–
–
D
–
–
SIDE VIEW
1.27 BSC
L
0.40
0°
–
–
1.27
8°
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
Ø
5/19/10
TITLE
GPC
DRAWING NO.
REV.
®
8S1, 8-lead (0.150”Wide Body), Plastic Gull
Wing Small Outline (JEDEC SOIC)
SWB
8S1
F
Package Drawing Contact:
contact@adestotech.com
AT25SF161
DS-25SF161–046H–8/2017
4 4
15.2 8S2 – 8-lead, .208” EIAJ SOIC
C
1
E
E1
L
N
θ
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0°
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8°
NOM
NOTE
SYMBOL
A1
A
A1
b
4
4
C
D
E1
E
D
2
L
SIDEE VVIIEEW
θ
e
1.27 BSC
3
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs aren't included.
3. Determines the true geometric position.
4. Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.
4/15/08
REV.
GPC
DRAWING NO.
TITLE
®
8S2, 8-lead, 0.208” Body, Plastic Small
Outline Package (EIAJ)
Package Drawing Contact:
contact@adestotech.com
STN
8S2
F
AT25SF161
DS-25SF161–046H–8/2017
4 5
15.3 8MA1 – UDFN
E
C
Pin 1 ID
SIDE VIEW
D
y
TOP VIEW
A1
A
K
8
E2
Option A
0.45
Pin #1
1
2
3
Pin #1 Notch
(0.20 R)
(Option B)
Chamfer
(C 0.35)
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
NOTE
SYMBOL
7
D2
6
A
0.45
0.55
0.60
e
A1
b
0.00
0.35
0.02
0.40
0.152 REF
5.00
4.00
6.00
3.40
1.27
0.60
–
0.05
0.48
C
D
D2
E
4.90
3.80
5.90
3.20
5.10
4.20
6.10
3.60
5
4
b
BOTTOM VIEW
L
E2
e
L
0.50
0.00
0.20
0.75
0.08
–
y
K
–
4/15/08
GPC
YFG
DRAWING NO.
TITLE
REV.
®
Package Drawing Contact:
contact@adestotech.com
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
8MA1
D
Note: Subject to change.
AT25SF161
DS-25SF161–046H–8/2017
4 6
15.4 8 - WLCSP — die Ball Grid Array
TOP VIEW
70
5
SIDE VIEW
(
+
COMMON DIMENSIONS
(Unit of Measure = mm)
Pin Assignment Matrix
A
B
C
D
VCC
SCK
WP
HOLD
SO
SI
GND
1
2
CS
1/17/17
GPC
YFG
DRAWING NO.
TITLE
REV.
®
Package Drawing Contact:
contact@adestotech.com
CS4-8A, 8-ball ((2 x 4 Array), Wafer Level Chip Scale
Package (WLCSP)
CS4-8A2
C
AT25SF161
DS-25SF161–046H–8/2017
4 7
16. Revision History
Revision Level – Release Date History
A – December 2014
B – March 2015
C – April 2015
Initial release
Removed DFN (not in production) footnote. Removed -Y option from
UDFN ordering codes.
Removed Preliminary document status.
Added Suspend/Resume commands to Table 5.1. Updated Portion
fractions in Table 8.1. Added Die in Wafer Form ordering option.
D – August 2015
Added WLCSP packages. Added part number for non-silver
assembly build (AT25SF161-SSPD). Added “P” grade in Ordering
Code Detail table.
E- February 2016
F - April 2016
Updated 90h opcode description (added 3 dummy bytes).
Updated outline drawing for 8-WLCSP package.
Updated corporate address.
G - January 2017
H - August 2017
AT25SF161
DS-25SF161–046H–8/2017
4 8
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2017 Adesto Technologies. All rights reserved. / Rev.: DS-25SF161–046H–8/2017
Adesto®, the Adesto logo, CBRAM®, and DataFlash® are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective
owners.
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications
detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the
Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.
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