BB401M [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 6V V(BR)DSS | 25MA I(D) | SOT-143VAR ; 晶体管| MOSFET | N沟道| 6V V（ BR ） DSS | 25MA I（ D） | SOT- 143VAR\n
| 型号： | BB401M |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 6V V(BR)DSS | 25MA I(D) | SOT-143VAR
|
| 文件： | 总9页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB401M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-715A (Z)
2nd. Edition
Dec. 1, 1998
Features
•
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.3 dB typ. at f = 200 MHz)
•
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AX–”.
2. BB401M is individual type number of HITACHI BBFET.
BB401M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate1 to source voltage
6
VG1S
+6
V
– 0
Gate 2 to source voltage
Drain current
VG2S
ID
±6
V
25
mA
mW
°C
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
150
150
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS
6
ID = 200µA, VG1S = VG2S = 0
IG1 = +10µA, VG2S = VDS = 0
IG2 = ±10µA, VG1S = VDS = 0
VG1S = +5V, VG2S = VDS = 0
VG2S = ±5V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
Gate1 to source breakdown voltage V(BR)G1SS +6
—
—
V
Gate2 to source breakdown voltage V(BR)G2SS ±6
—
—
V
Gate1 to cutoff current
Gate2 to cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
IG1SS
—
—
+100
±100
1.0
1.0
20
nA
nA
V
IG2SS
—
—
VG1S(off)
VG2S(off)
ID(op)
0.4
0.4
10
0.7
0.7
15
V
mA
V
G2S = 4V, RG = 100kΩ
Forward transfer admittance
|yfs|
15
20
—
mS
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 100kΩ, f = 1kHz
Input capacitance
Output capacitance
Reverse capacitance
Power gain
ciss
coss
crss
PG
NF
2.2
0.9
—
3.0
1.2
3.9
1.6
pF
pF
pF
dB
dB
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 100kΩ
f = 1MHz
0.018 0.04
22
—
26
—
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 100kΩ, f = 200MHz
Noise figure
1.3
1.9
2
BB401M
Main Characteristics
Test Circuit for Operating Items (I
, |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
V
G1
V
R
G2
G
Gate 2
Gate 1
Drain
A
Source
I
D
Power Gain, Noise Figure Test Circuit
V
G2
V
T
V
T
1000p
1000p
1000p
47k
BBFET
47k
1000p
1SV70
Output(50 ¶)
47k
L1
1000p
L2
Input(50 ¶)
10p max
1000p
1000p
RFC
1SV70
R
100k
36p
G
1000p
Unit @Resistance @( ¶)
@ @ Capacitance @(F)
V
= V
G1
D
L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB401M
Power vs. Temperature Derating
Typical Output Characteristics
= 4 V
30
25
20
15
10
5
200
150
100
50
V
G2S
0
0
50
100
150
200
1
2
3
4
5
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (°C)
DC Current vs.
Gate2 to Source Voltage
DC Current vs.
Gate1 to Source Voltage
25
20
16
12
8
V
R
= 5 V
= 82 k
DS
V
= V
= 5 V
GG
DD
Ω
G
20
15
10
5
4
V
= 1 V
G2S
V
0
0
1
2
3
4
5
1
2
3
4
5
(V)
Gate2 to Source Voltage
V
Gate1 to Source Voltage
(V)
G2S
G1S
4
BB401M
DC Current vs.
Gate1 to Source Voltege
DC Current vs.
Gate1 to Source Voltege
20
16
12
8
20
16
12
8
V
R
= 5 V
= 150 k
DS
V
R
= 5 V
= 100 k
DS
Ω
G
Ω
G
3 V
4 V
2 V
= 1 V
4
4
V
= 1 V
V
G2S
V
G2S
0
0
1
2
3
4
5
1
2
3
4
5
Gate1 to Source Voltage
(V)
Gate1 to Source Voltage
V
(V)
G1S
G1S
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Forward Transfer Admittance vs.
Gate1 to Source Voltage
30
25
20
15
10
5
30
25
20
15
10
5
V
R
= 5 V
DS
V
R
= 5 V
DS
= 100 k
= 82 k
Ω
Ω
G
G
f = 1 kHz
f = 1 kHz
2 V
2 V
V
= 1 V
4
V
3
= 1 V
G2S
G2S
V
0
0
1
2
4
5
(V)
1
2
3
5
(V)
Gate1 to Source Voltage
Gate1 to Source Voltage
V
G1S
G1S
5
BB401M
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Power Gain vs. Gate Resistance
30
25
20
15
10
20
V
R
= 5 V
DS
= 150 k
Ω
G
16
12
8
f = 1 kHz
2 V
V
V
V
= 5 V
DS
4
= 5 V
= 4 V
G1S
G2S
5
0
V
= 1 V
4
f = 200 MHz
20 50 100 200
Gate Resistance R (k
G2S
0
10
500 1000
1
2
3
5
Gate1 to Source Voltage
V
G1S
(V)
)
Ω
G
Noise Figure vs. Gate Resistance
Power Gain vs. Drain Current
4
3
2
30
25
20
15
10
5
V
V
V
= 5 V
= 5 V
= 4 V
DS
G1S
G2S
f = 200 MHz
V
= 5 V
DS
V
V
= 5 V
= 4 V
G1S
G2S
1
0
R = variable
G
f = 200 MHz
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Drain Current I
(mA)
Gate Resistance R (k
)
Ω
G
D
6
BB401M
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
4
3
2
1
30
25
20
15
10
V
V
V
= 5 V
DS
= 5 V
= 4 V
G1S
G2S
R = variable
G
f = 200 MHz
V
V
V
= 5 V
DS
5
0
= 5 V
= 4 V
G1S
G2S
0
5
10
15
20
25
10
20
50 100 200
500 1000
30
Drain Current I
(mA)
Gate Resistance R (k
G
)
Ω
D
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
60
50
40
30
20
10
4
3
2
1
V
V
V
= 5 V
DS
= 5 V
= 4 V
G1S
G2S
R = 100 k
Ω
G
f = 200 MHz
V
V
= 5 V
= 5 V
R = 100 k Ω
DS
G1S
G
f = 1 MHz
0
0
1
2
3
4
1
2
3
4
5
(V)
5
Gate2 to Source Voltage V
Gate2 to Source Voltage V
(V)
G2S
G2S
7
BB401M
Package Dimensions (Unit: mm)
}0.2
2.95
}0.2
1.9
0.95 0.95
+ 0.1
– 0.06
0.16
+ 0.1
– 0.05
+ 0.1
0.4
0.4
– 0.05
4
1
3
0 ~ 0.1
2
+ 0.1
+ 0.1
– 0.05
0.6
0.4
– 0.05
0.85
1.8
0.95
MPAK–4R
Hitachi Code
EIAJ
—
—
JEDEC
8
BB401M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Electronic components Group
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
2000 Sierra Point Parkway Dornacher Straße 3
Brisbane, CA 94005-1897 D-85622 Feldkirchen, Munich
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
9
相关型号：
©2020 ICPDF网 联系我们和版权申明