BFG135/T1 [ETC]
TRANSISTOR UHF BIPOLAR BREITBAND ; 晶体管超高频双极BREITBAND\n
| 型号： | BFG135/T1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR UHF BIPOLAR BREITBAND
|
| 文件： | 总13页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG135
NPN 7GHz wideband transistor
1995 Sep 13
Product specification
File under discrete semiconductors, SC14
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
DESCRIPTION
PINNING
PIN
NPN silicon planar epitaxial transistor
in a plastic SOT223 envelope,
intended for wideband amplifier
applications. The small emitter
structures, with integrated
emitter-ballasting resistors, ensure
high output voltage capabilities at a
low distortion level.
DESCRIPTION
emitter
base
age
4
1
2
3
4
emitter
collector
The distribution of the active areas
across the surface of the device gives
an excellent temperature profile.
1
2
3
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
25
UNIT
open emitter
open base
−
−
−
−
−
−
−
−
V
15
150
1
V
mA
W
Ptot
up to Ts = 145 °C (note 1)
hFE
IC = 100 mA; VCE = 10 V; Tj = 25 °C
80
130
7
−
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
−
−
−
−
GHz
dB
GUM
maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz;
gain
16
−
−
−
Tamb = 25 °C
IC = 100 mA; VCE = 10 V; f = 800 MHz;
Tamb = 25 °C
12
dB
Vo
output voltage
dim = −60 dB; IC = 100 mA; VCE = 10 V;
RL = 75 Ω; Tamb = 25 °C;
850
mV
f(p+q−r) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
25
15
2
V
−
V
open collector
−
V
−
150
1
mA
W
°C
°C
Ptot
Tstg
Tj
up to Ts = 145 °C (note 1)
−
−65
−
150
175
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 13
2
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
THERMAL CHARACTERISTICS
THERMAL
RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering
point
up to Ts = 145 °C (note 1)
30 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
MIN.
TYP. MAX. UNIT
IE = 0; VCB = 10 V
−
−
1
−
−
−
−
−
µA
hFE
Cc
Ce
Cre
fT
IC = 100 mA; VCE = 10 V
80
−
130
2
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
pF
−
7
pF
−
1.2
7
pF
IC = 100 mA; VCE = 10 V; f = 1 GHz;
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power
gain
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
16
12
−
−
dB
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
Vo
d2
output voltage
note 1
note 2
−
−
−
900
850
−58
−
−
−
mV
mV
dB
second order intermodulation IC = 90 mA; VCE = 10 V;
distortion VO = 50 dBmV; Tamb = 25 °C;
(p+q) = 450 MHz;
f
fp = 50 MHz; fq = 400 MHz
IC = 90 mA; VCE = 10 V;
VO = 50 dBmV; Tamb = 25 °C;
f(p+q) = 810 MHz;
−
−53
−
dB
fp = 250 MHz; fq = 560 MHz
Notes
1. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
1995 Sep 13
3
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
V
CC
C4
L6
C5
C7
L5
V
BB
C3
R1
C6
L3
output
75
R2
Ω
C1
L1
L2
L4
input
75
DUT
Ω
C2
R3
R4
MBB284
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
10
UNIT
nF
DIMENSIONS
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
C1, C3, C5, C6 multilayer ceramic capacitor
C2, C7
C4 (note 1)
L1
multilayer ceramic capacitor
1
pF
nF
Ω
miniature ceramic plate capacitor 10
microstripline
75
75
length 7 mm;
width 2.5 mm
L2
microstripline
Ω
length 22mm;
width 2.5 mm
L3 (note 1)
L4
1.5 turns 0.4 mm copper wire
microstripline
int. dia. 3 mm;
winding pitch 1 mm
75
Ω
length 19 mm;
width 2.5 mm
L5
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
5
µH
nH
kΩ
Ω
3122 108 20153
L6 (note 1)
R1
≈25
10
200
27
length 30 mm
2322 180 73103
2322 180 73201
2322 180 73279
R2 (note 1)
R3, R4
Ω
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness
1
⁄
inch; thickness of copper sheet 1⁄32 inch.
16
1995 Sep 13
4
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
V
V
CC
BB
C3
C5
R1
L5
R3
R4
C1
C6
L3
75 Ω
input
75 Ω
output
L4
L1
L2
C2
C7
C4
R2
L6
MBB299
80 mm
60 mm
MBB298
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
5
1995 Sep 13
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MBB300
MBB294
1.2
160
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
120
80
40
0
0
0
50
100
150
200
C)
40
80
120
160
(mA)
o
T
(
I
C
s
VCE = 10 V; Tj = 25 °C.
Fig.5 DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB295
MBB296
8
3
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
2
4
2
0
1
0
0
40
80
120
160
0
4
8
12
16
V
20
(V)
I
(mA)
C
CB
IE = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 1 GHz; Tamb = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-base voltage.
Fig.7 Transition frequency as a function of
collector current.
1995 Sep 13
6
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MBB292
MBB293
45
45
handbook, halfpage
handbook, halfpage
d
d
im
im
(dB)
(dB)
50
50
55
60
55
60
65
70
65
70
20
20
40
60
80
100
120
(mA)
40
60
80
100
120
(mA)
I
I
C
C
VCE = 10 V; Vo = 900 mV; Tamb = 25 °C;
(p+q−r) = 443.25 MHz.
VCE = 10 V; Vo = 850 mV; Tamb = 25 °C;
(p+q−r) = 793.25 MHz.
f
f
Fig.8 Intermodulation distortion as a function of
collector current.
Fig.9 Intermodulation distortion as a function of
collector current.
MBB291
MBB290
45
45
handbook, halfpage
handbook, halfpage
d
d
2
2
(dB)
(dB)
50
50
55
60
55
60
65
70
65
70
20
40
60
80
100
120
(mA)
20
40
60
80
100
120
(mA)
I
I
C
C
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C;
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 °C
f(p+q) = 450 MHz.
f(p+q) = 810 MHz.
Fig.10 Second order intermodulation distortion as
a function of collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1995 Sep 13
7
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA951
MEA952
60
50
handbook, halfpage
handbook, halfpage
Z
L
Z
L
(Ω)
(Ω)
50
40
30
40
R
L
R
L
30
20
10
20
10
0
X
L
X
L
0
0
–10
0
0.25
0.50
0.75
1.0
(W)
0.5
1
1.5
P
(W)
OUT
P
OUT
VCE = 7.5 V; f = 900 MHz.
VCE = 10 V; f = 900 MHz.
Fig.12 Load impedance as a function of output
power.
Fig.13 Load impedance as a function of output
power.
MEA953
MEA948
60
10
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
50
8
r
i
R
L
40
30
20
x
i
6
4
2
0
X
L
10
0
0
0.5
1
1.5
0
0.25
0.50
0.75
1.0
(W)
P
(W)
OUT
P
OUT
VCE = 12.5 V; f = 900 MHz.
VCE = 7.5 V; f = 900 MHz.
Fig.14 Load impedance as a function of output
power.
Fig.15 Input impedance as a function of output
power.
1995 Sep 13
8
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA949
MEA950
10
10
handbook, halfpage
handbook, halfpage
Z
Z
i
i
(Ω)
(Ω)
8
8
r
i
r
i
6
6
4
2
x
i
x
i
4
2
0
0
0
0
0.5
1
1.5
0.5
1
1.5
P
(W)
P
(W)
OUT
OUT
VCE = 10 V; f = 900 MHz.
VCE = 12.5 V; f = 900 MHz.
Fig.16 Input impedance as a function of output
power.
Fig.17 Input impedance as a function of output
power.
MEA947
MEA945
80
1.5
handbook, halfpage
handbook, halfpage
V
=
CE
η
12.5 V
P
OUT
(W)
(%)
V
=
70
60
50
40
CE
12.5 V
10 V
1
10 V
7.5 V
7.5 V
0.5
0
0
0.5
1
1.5
(W)
0
100
200
300
P
OUT
P
(mW)
IN
f = 900 MHz.
f = 900 MHz.
Fig.18 Efficiency as a function of output power.
Fig.19 Output power as a function of input power.
1995 Sep 13
9
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
MEA946
MBB289
10
40
handbook, halfpage
handbook, halfpage
G
p
G
UM
(dB)
(dB)
V
=
CE
8
6
12.5 V
30
10 V
20
10
7.5 V
4
2
0
0
2
4
3
0
0.5
1
1.5
(W)
10
10
10
10
P
f (MHz)
OUT
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
f = 900 MHz.
Fig.21 Maximum unilateral power gain as a
function of frequency.
Fig.20 Power gain as a function of output power.
1995 Sep 13
10
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
50
25
100
10
250
+ j
10
25
50
100
250
0
∞
– j
250
10
100
25
MBB288
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω..
Fig.22 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
o
o
150
30
50 40 30 20 10
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB286
90
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.23 Common emitter forward transmission coefficient (S21).
11
1995 Sep 13
Philips Semiconductors
Product specification
NPN 7GHz wideband transistor
BFG135
o
90
o
o
60
120
o
o
150
30
0.1 0.2 0.3 0.4 0.5 0.6
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB285
90
IC = 100 mA; VCE = 10 V; Tamb = 25 °C.
Fig.24 Common emitter reverse transmission coefficient (S12).
50
25
100
10
250
+ j
– j
10
25
50
100
250
0
∞
250
10
100
25
MBB287
50
IC = 100 mA; VCE = 10 V; Tamb = 25 °C; Zo = 50 Ω..
Fig.25 Common emitter output reflection coefficient (S22).
12
1995 Sep 13
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© Philips Electronics N.V. 1996
SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
647021/1200/01/pp12
Date of release: 1996 Jul 17
Document order number: 9397 750 00971
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