BFG16A [NXP]
NPN 2 GHz wideband transistor; NPN 2 GHz的宽带晶体管
| 型号： | BFG16A |
| 厂家： | 
NXP |
| 描述： | NPN 2 GHz wideband transistor |
| 文件： | 总8页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG16A
NPN 2 GHz wideband transistor
1995 Sep 12
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
FEATURES
PINNING
PIN
page
4
• High power gain
DESCRIPTION
emitter
base
• Good thermal stability
1
2
3
4
• Gold metallization ensures
excellent reliability.
emitter
collector
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
1
2
3
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP. MAX. UNIT
open emitter
open base
−
−
40
25
150
1
V
−
−
−
−
V
−
mA
W
Ptot
up to Ts = 110 °C; note 1
−
hFE
IC = 150 mA; VCE = 5 V; Tj = 25 °C 25
80
1.5
−
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
−
10
−
f = 500 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
40
25
2
V
−
V
open collector
−
V
−
150
1
mA
W
Ptot
Tstg
Tj
up to Ts = 110 °C; note 1
−
−65
−
+150 °C
150 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction up to Ts = 110 °C; note 1
40
K/W
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 0.1 mA
25
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 10 mA
18
−
−
V
V(BR)EBO
ICBO
hFE
Cc
emitter-base breakdown voltage open collector; IE = 0.1 mA
3
−
−
V
collector cut-off current
DC current gain
IE = 0; VCB = 28 V
−
−
20
−
µA
IC = 150 mA; VCE = 5 V
25
−
80
2.5
10.0
1.5
1.5
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCB = 10 V; f = 1 MHz
−
pF
Ce
−
−
pF
Cre
−
−
pF
fT
IC = 100 mA; VCE = 10 V;
−
−
GHz
f = 500 MHz; Tamb = 25 °C
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
note 1 f = 500 MHz; Tamb = 25 °C
−
10
−
dB
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
MBG198
MBB365
1.2
160
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
120
80
40
0
0
0
0
50
100
150
200
o
( C)
100
200
I
(mA)
C
T
s
VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as function of
collector current.
Fig.2 Power derating curve.
MBB363
MBB364
2
5
handbook, halfpage
handbook, halfpage
f
C
T
re
(GHz)
1.6
(pF)
4
3
1.2
0.8
2
1
0
0.4
0
0
40
80
120
160
0
4
8
12
16
V
20
(V)
I
(mA)
C
CB
IC = ic = 0; f = 1 MHz.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
50
3 GHz
25
100
10
250
+ j
10
25
50
100
250
0
– j
250
10
40 MHz
100
25
MBB366
50
IC = 70 mA; VCE = 15 V; Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
40 MHz
o
o
150
30
50
40
30
20
10
o
o
0
180
3 GHz
o
o
30
150
o
o
60
120
o
MBB367
90
IC = 70 mA; VCE = 15 V.
Fig.7 Common emitter forward transmission coefficient (S21).
5
1995 Sep 12
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
o
90
o
o
60
120
o
o
150
30
3 GHz
0.5 0.4
0.3
0.2
0.1
o
o
0
180
40 MHz
o
o
30
150
o
o
60
120
o
MBB368
90
IC = 70 mA; VCE = 15 V.
Fig.8 Common emitter reverse transmission coefficient (S12).
50
25
100
10
3 GHz
25
250
+ j
– j
10
50
100
250
0
40 MHz
250
10
100
25
MBB369
50
IC = 70 mA; VCE = 15 V; Zo = 50 Ω.
Fig.9 Common emitter output transmission coefficient (S22).
6
1995 Sep 12
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
6.7
6.3
0.32
0.24
B
3.1
2.9
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
16
max
1
2
3
o
10
max
1.80
max
0.80
0.60
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.10 SOT223.
1995 Sep 12
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
8
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