BFG16A/T1 [ETC]
TRANSISTOR UHF BIPOLAR BREITBAND ; 晶体管超高频双极BREITBAND\n
| 型号： | BFG16A/T1 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR UHF BIPOLAR BREITBAND
|
| 文件： | 总9页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG16A
NPN 2 GHz wideband transistor
1995 Sep 12
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
FEATURES
PINNING
PIN
page
4
• High power gain
DESCRIPTION
emitter
base
• Good thermal stability
1
2
3
4
• Gold metallization ensures
excellent reliability.
emitter
collector
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
1
2
3
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP. MAX. UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
40
25
150
1
V
−
−
−
−
V
−
mA
W
Ptot
hFE
fT
up to Ts = 110 °C; note 1
−
IC = 150 mA; VCE = 5 V; Tj = 25 °C 25
80
1.5
−
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
−
10
−
f = 500 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
40
25
2
V
−
V
open collector
−
V
−
150
1
mA
W
Ptot
Tstg
Tj
up to Ts = 110 °C; note 1
−
−65
−
+150 °C
150 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction up to Ts = 110 °C; note 1
40
K/W
to soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 0.1 mA
25
−
−
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC = 10 mA
18
−
−
V
V(BR)EBO
ICBO
hFE
Cc
emitter-base breakdown voltage open collector; IE = 0.1 mA
3
−
−
V
collector cut-off current
DC current gain
IE = 0; VCB = 28 V
−
−
20
−
µA
IC = 150 mA; VCE = 5 V
25
−
80
2.5
10.0
1.5
1.5
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCB = 10 V; f = 1 MHz
−
pF
Ce
−
−
pF
Cre
−
−
pF
fT
IC = 100 mA; VCE = 10 V;
−
−
GHz
f = 500 MHz; Tamb = 25 °C
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
note 1 f = 500 MHz; Tamb = 25 °C
−
10
−
dB
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
MBG198
MBB365
1.2
160
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
120
80
40
0
0
0
0
50
100
150
200
o
( C)
100
200
I
(mA)
C
T
s
VCE = 10 V; Tj = 25 °C.
Fig.3 DC current gain as function of
collector current.
Fig.2 Power derating curve.
MBB363
MBB364
2
5
handbook, halfpage
handbook, halfpage
f
C
T
re
(GHz)
1.6
(pF)
4
3
1.2
0.8
2
1
0
0.4
0
0
40
80
120
160
0
4
8
12
16
V
20
(V)
I
(mA)
C
CB
IC = ic = 0; f = 1 MHz.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
1995 Sep 12
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
50
3 GHz
25
100
10
250
+ j
10
25
50
100
250
0
– j
250
10
40 MHz
100
25
MBB366
50
IC = 70 mA; VCE = 15 V; Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
40 MHz
o
o
150
30
50
40
30
20
10
o
o
0
180
3 GHz
o
o
30
150
o
o
60
120
o
MBB367
90
IC = 70 mA; VCE = 15 V.
Fig.7 Common emitter forward transmission coefficient (S21).
5
1995 Sep 12
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
o
90
o
o
60
120
o
o
150
30
3 GHz
0.5 0.4
0.3
0.2
0.1
o
o
0
180
40 MHz
o
o
30
150
o
o
60
120
o
MBB368
90
IC = 70 mA; VCE = 15 V.
Fig.8 Common emitter reverse transmission coefficient (S12).
50
25
100
10
3 GHz
25
250
+ j
– j
10
50
100
250
0
40 MHz
250
10
100
25
MBB369
50
IC = 70 mA; VCE = 15 V; Zo = 50 Ω.
Fig.9 Common emitter output transmission coefficient (S22).
6
1995 Sep 12
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
6.7
6.3
0.32
0.24
B
3.1
2.9
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
16
max
1
2
3
o
10
max
1.80
max
0.80
0.60
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.10 SOT223.
1995 Sep 12
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFG16A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
8
Philips Semiconductors – a worldwide company
Argentina: see South America
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 83749, Fax. +31 40 27 88399
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium: see The Netherlands
Brazil: see South America
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 926 5361, Fax. +7 095 564 8323
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia: see South America
Czech Republic: see Austria
Slovakia: see Austria
Slovenia: see Italy
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 615 800, Fax. +358 615 80920
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 52 60, Fax. +49 40 23 536 300
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. +30 1 4894 339/911, Fax. +30 1 4814 240
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. +886 2 382 4443, Fax. +886 2 382 4444
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 648 1007
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +1 800 234 7381, Fax. +1 708 296 8556
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 825 344, Fax.+381 11 635 777
Middle East: see Italy
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Internet: http://www.semiconductors.philips.com/ps/
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1996
SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
647021/1200/01/pp12
Date of release: 1996 Jul 17
Document order number: 9397 750 00971
相关型号：
BFG16ATRL13
RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFG17A
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFG17ATRL
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFG19
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
INFINEON
©2020 ICPDF网 联系我们和版权申明