BFQ68/B [ETC]
TRANSISTOR UHF BIPOLAR BREITBAND ; 晶体管超高频双极BREITBAND\n
| 型号： | BFQ68/B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR UHF BIPOLAR BREITBAND
|
| 文件： | 总10页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68
NPN 4 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
DESCRIPTION
PINNING
PIN
NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.
DESCRIPTION
collector
1
2
3
4
4
page
emitter
base
1
3
emitter
2
Top view
MBK187
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power
band IV and V equipment.
Fig.1 SOT122A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-emitter voltage
collector current
CONDITIONS
TYP. MAX. UNIT
VCEO
IC
open base
−
−
−
4
18
300
4.5
−
V
mA
W
Ptot
fT
total power dissipation
transition frequency
up to Tc = 110 °C
IC = 240 mA; VCE = 15 V; f = 500 MHz;
GHz
Tj = 25 °C
Vo
output voltage
Ic = 240 mA; VCE = 15 V;
1.6
−
V
dim = −60 dB; RL = 75 Ω;
f(p+q−r) = 793.25 MHz; Tamb = 25 °C
PL1
ITO
output power at 1 dB gain
compression
Ic = 240 mA; VCE = 15 V; RL = 75 Ω;
f = 800 MHz; Tamb = 25 °C
28
47
−
−
dBm
dBm
third order intercept point
Ic = 240 mA; VCE = 15 V; RL = 75 Ω;
f = 800 MHz; Tamb = 25 °C
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
25
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
−
−
−
−
V
open base
18
V
open collector
2
V
300
4.5
150
200
mA
W
°C
°C
Ptot
Tstg
Tj
up to Tc = 110 °C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-c
thermal resistance from junction to case
20 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 15 V
MIN. TYP. MAX. UNIT
collector cut-off current
DC current gain
−
−
50
−
µA
hFE
fT
IC = 240 mA; VCE = 15 V
25
−
75
4
transition frequency
IC = 240 mA; VCE = 15 V;
f = 500 MHz
−
GHz
Cc
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 15 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 15 V; f = 1 MHz
note 1
−
−
−
−
−
3.8
20
−
−
−
−
−
pF
pF
pF
pF
dB
Ce
Cre
Ccs
GUM
feedback capacitance
collector-stud capacitance
2.3
0.8
13
maximum unilateral power gain IC = 240 mA; VCE = 15 V;
(note 2)
f = 800 MHz; Tamb = 25 °C
Vo
output voltage
note 3
−
−
1.6
28
−
−
V
PL1
output power at 1 dB gain
compression (see Fig.2)
IC = 240 mA; VCE = 15 V; RL = 75 Ω;
Tamb = 25 °C;
dBm
measured at f = 800 MHz
ITO
third order intercept point (see
Fig.2)
note 4
−
47
−
dBm
Notes
1. Measured with emitter and base grounded.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
3.
dim = −60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 795.25 MHz;
Vq = Vo −6 dB; fq = 803.25 MHz;
Vr = Vo −6 dB; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
4. IC = 240 mA; VCE = 15 V; RL = 75 Ω; Tamb = 25 °C;
Pp = ITO − 6 dB; fp = 800 MHz;
Pq = ITO − 6 dB; fq = 801 MHz;
measured at f(2q−p) = 802 MHz and at f(2p−q) = 799 MHz.
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
2.2 nF
2.2 nF
V
CC
V
BB
L2
2.2 kΩ
2.2 nF
2.2 nF
75 Ω
L1
180 Ω
2.2 nF
75 Ω
DUT
4.7 Ω
1.2
pF
1.2
pF
1.8 pF
0.68 pF
24 Ω
24 Ω
MEA273
f = 40 to 860 MHz.
L1 = L2 = 5 µH Ferroxcube choke.
Fig.2 Intermodulation distortion MATV test circuit.
MEA272
MBB361
120
6
handbook, halfpage
handbook, halfpage
f
T
h
FE
(GHz)
80
4
2
0
40
0
3
2
0
40
80
120
160
(mA)
10
10
10
I
(mA)
C
I
C
VCE = 10 V; Tj = 25 °C.
VCE = 15 V; f = 500 MHz; Tj = 25 °C
Fig.3 DC current gain as a function of collector
current.
Fig.4 Transition frequency as a function of
collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
MEA271
MEA270
6
40
handbook, halfpage
handbook, halfpage
gain
(dB)
C
c
(pF)
30
4
20
10
2
0
G
Is
UM
2
I
12
0
0.1
0
10
20
V
(V)
1
10
f (GHz)
CB
IE = ie = 0; f = 1 MHz
IC = 240 mA; VCE = 15 V; Tamb = 25 °C
Fig.5 Collector capacitance as a function of
collector-base voltage.
Fig.6 Gain as a function of frequency.
MEA269
20
handbook, halfpage
d
im
(dB)
30
40
50
60
70
0
100
200
300
I
(mA)
C
VCE = 15 V; Vo = 1.6 V; f(p+q−r) = 793.25 MHz.
Fig.7 Intermodulation distortion as a function of
collector current.
September 1995
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
1
0.5
2
1200 MHz
0.2
1000
800
5
10
500
+ j
– j
0.2
0.5
1
2
5
10
0
∞
200
100
10
40
5
0.2
2
0.5
MEA274
1
IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.8 Common emitter input reflection coefficient (S11).
90°
120°
60°
1200 MHz
1000
800
150°
30°
500
200
0.05
+ ϕ
− ϕ
100
40
180°
0°
0.1
0.15
30°
150°
60°
120°
MEA275
90°
IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
Fig.9 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
40
90°
120°
60°
150°
100
30°
200
500
800
1000
1200 MHz
ϕ
ϕ
180°
0°
0.05
0.1
0.15
30°
150°
60°
120°
MEA277
90°
IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
1200
1000
800
200
10
500
100
5
0.2
40 MHz
2
0.5
MEA276
1
IC = 240 mA; VCE = 15 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.11 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT122A
D
ceramic
BeO
A
metal
Q
c
N
1
A
D
1
w
D
M
A
1
M
2
W
N
N
3
M
1
X
detail X
H
b
α
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
L
N
1
UNIT
A
b
c
D
D
D
H
M
M
N
N
Q
W
w
1
α
1
2
1
3
max.
8-32
UNC
5.97
4.74
5.85
5.58
0.18
0.14
7.50
7.23
6.48
6.22
7.24 27.56 9.91
6.93 25.78 9.14
3.18
2.66
1.66
1.39
11.82
11.04
3.86
2.92
3.38
2.74
mm
0.381
90°
1.02
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-04-18
SOT122A
September 1995
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
10
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