BLC8G27LS-180AVZ [ETC]
RF FET LDMOS 65V 14DB SOT12753;
| 型号： | BLC8G27LS-180AVZ |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 65V 14DB SOT12753 |
| 文件： | 总15页 (文件大小：1374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLC8G27LS-180AV
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 2496 MHz to 2690 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a Doherty production test circuit.
Test signal
f
VDS
(V)
28
PL(AV)
(W)
Gp
D
ACPR
(dBc)
30 [1]
(MHz)
(dB)
14
(%)
43.5
1-carrier W-CDMA
2496 to 2690
28
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Low thermal resistance providing excellent thermal stability
Integrated ESD protection
Designed for low memory effects providing excellent pre-distortability
Lower output capacitance for improved performance in Doherty applications
Asymmetrical design to achieve optimal efficiency across the band
Decoupling leads to enable improved video bandwidth
Internally matched for ease of use (input and output)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2496 MHz to 2690 MHz frequency range
BLC8G27LS-180AV
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
drain1 (main)
5
1
3
2
4
6
7
1, 5
2
drain2 (peak)
3
gate1 (main)
3
7
4
4
gate2 (peak)
5
video decoupling (main)
video decoupling (peak)
source
6
2, 6
aaa-007731
[1]
7
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLC8G27LS-180AV
-
air cavity plastic earless flanged package; 6 leads
SOT1275-1
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
-
65
VGS
Tstg
0.5 +13
V
65
+150 C
[1]
Tj
-
225
C
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol Parameter
Rth(j-case) thermal resistance from Tcase = 80 C; VDS = 28 V; IDq = 200 mA;
junction to case VGS(amp)peak = 0.6 V; f = 2600 MHz; PL = 28 W
Thermal characteristics
Conditions
Typ
Unit
0.38 K/W
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ Max Unit
Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.7 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 72 mA
1.5
1.9 2.3
2.0 2.4
V
VDS = 28 V; ID = 300 mA 1.6
V
VGS = 0 V; VDS = 28 V
-
-
-
1.2
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
13.3 -
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 72 mA
-
-
-
-
120
nA
S
forward transconductance
0.63 -
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 2.52 A
198 318
m
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.3 mA
65
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 130 mA 1.5
VDS = 28 V; ID = 600 mA 1.6
1.9 2.3
2.0 2.4
V
V
VGS = 0 V; VDS = 28 V
-
-
-
1.2
-
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
23
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
-
120
nA
S
forward transconductance
VDS = 10 V; ID = 130 mA
1.13 -
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 4.55 A
109 155
m
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA; PAR = 7.2 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 to 64 DPCH; f1 = 2496 MHz; f2 = 2690 MHz; RF performance at VDS = 28 V;
IDq = 200 mA (main); VGS(amp)peak = 0.6 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 2496 MHz to 2690 MHz.
Symbol
Gp
Parameter
Conditions
Min Typ
Max Unit
power gain
PL(AV) = 28 W
PL(AV) = 28 W
PL(AV) = 28 W
PL(AV) = 28 W
13
-
14
-
dB
dB
%
RLin
input return loss
drain efficiency
adjacent channel power ratio
10
7
-
D
39.5 43.5
30
ACPR
-
26
dBc
Table 8.
RF characteristics
Test signal: pulsed CW; tp = 100 s; = 10 %; f = 2690 MHz; RF performance at VDS = 28 V;
IDq = 200 mA (main); VGS(amp)peak = 0.6 V; Tcase = 25 C; unless otherwise specified; in an
asymmetrical Doherty production test circuit at 2496 MHz to 2690 MHz.
Symbol
Parameter
Conditions
Min
Typ Max Unit
173 193
PL(3dB)
output power at 3 dB gain
compression
153
W
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
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BLC8G27LS-180AV
Power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLC8G27LS-180AV is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 200 mA (main); VGS(amp)peak = 0.6 V; PL = 140 W; f = 2496 MHz.
7.2 Impedance information
Table 9.
Typical impedance of main device
Measured load-pull data of main device; IDq = 420 mA (main); VDS = 28 V.
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
2496
2600
2690
3.1 j7.4
4.0 j7.7
4.6 j7.2
2.7 j7.7
2.7 j8.3
2.7 j8.3
49.4
49.3
49.4
56.4
54.8
56
14.7
15.3
16.1
Maximum drain efficiency load
2496
2600
2690
3.1 j7.4
4.0 j7.7
4.6 j7.2
5.7 j6.1
4.2 j6.1
3.7 j6.4
47.7
48.1
48.2
63.3
62.6
63
17
17.5
18.2
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
Table 10. Typical impedance of peak device
Measured load-pull data of peak device; IDq = 780 mA (peak); VDS = 28 V.
[1]
[1]
[2]
[2]
[2]
f
ZS
()
ZL
PL
D
Gp
(MHz)
()
(W)
(%)
(dB)
Maximum power load
2496
2600
2690
3.9 j8.9
5.3 j9.3
6.3 j7.6
3.9 j10.8
4.7 j12.0
6.0 j12.4
51.7
51.6
51.3
55
14.2
14.6
15.6
52.4
54
Maximum drain efficiency load
2496
2600
2690
3.9 j8.9
5.3 j9.3
6.3 j7.6
3.9 j7.6
3.3 j8.3
4.1 j9.1
50.2
49.9
49.8
62.5
61.6
60.5
16.3
17
17.6
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Recommended impedances for Doherty design
Table 11. Typical impedance of main device at 1 : 1 load
Measured load-pull data of main device; IDq = 420 mA (main); VDS = 28 V.
[1]
[1]
[2]
[3]
[3]
f
ZS
ZL
PL
D
Gp
(MHz)
2496
2600
2690
()
()
(dBm)
49.0
(%)
42
41
40
(dB)
18.8
19.0
20.0
3.9 j8.9
5.3 j9.3
6.3 j7.6
4.0 j7.6
3.9 j7.5
3.3 j7.6
48.9
49.1
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
[3] at PL(AV) = 44.5 dBm.
Table 12. Typical impedance of main device at 1 : 2 load
Measured load-pull data of main device; IDq = 420 mA (main); VDS = 28 V.
[1]
[1]
[2]
[3]
[3]
f
ZS
ZL
PL
D
Gp
(MHz)
2496
2600
2690
()
()
(dBm)
46.7
(%)
(dB)
20.5
21.0
22.0
3.9 j8.9
5.3 j9.3
6.3 j7.6
7.7 j5.8
7.0 j5.1
5.4 j5.5
53.0
52.0
51.0
46.5
47.0
[1] ZS and ZL defined in Figure 1.
[2] at 3 dB gain compression.
[3] at PL(AV) = 44.5 dBm.
7.4 VBW in Doherty operation
The BLC8G27LS-180AV shows 125 MHz (typical) video bandwidth in Doherty
development board in 2600 MHz at VDS = 28 V; IDq = 200 mA and VGS(amp)peak = 0.6 V.
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
5 of 15
BLC8G27LS-180AV
Power LDMOS transistor
7.5 Test circuit
40 mm
40 mm
C14
C1
C2
C3
C13
C19
C9
C17
R2
R1
C7
C8
C11
C12
80 mm
R3
C10
C18
C6
C4
C5
C16
C15
C20
aaa-016036
Printed-Circuit Board (PCB): Rogers RO4350B; r = 3.5; thickness = 0.508 mm;
thickness copper plating = 35 m.
See Table 13 for a list of components.
Fig 2. Component layout for test circuit
Table 13. List of components
See Figure 2 for component layout.
Component
Description
Value
Remarks
C1, C4, C13, C15, multilayer ceramic chip capacitor 10 F, 50 V
Murata: SMD 1206
C17, C18
C2, C5, C14, C16 multilayer ceramic chip capacitor 1 F, 50 V
Murata: SMD 1206
ATC 600F series
C3, C6, C7, C8,
C9, C10, C12
multilayer ceramic chip capacitor 11 pF
C11
multilayer ceramic chip capacitor 3 pF
ATC 600F series
C19, C20
R1
electrolytic capacitor
SMD resistor
2200 F, 63 V
Vishay BCcomponents
50
R2, R3
SMD resistor
5.1
SMD 0805
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
7.6 Graphical data
7.6.1 Pulsed CW
aaa-014563
aaa-014564
18
16
14
12
10
8
70
60
50
40
30
20
10
G
η
D
(%)
p
(dB)
(2)
(1)
(2))
(1))
0
40
80
120
160
(W)
200
0
40
80
120
160
P (W)
L
200
P
L
VDS = 28 V; IDq = 200 mA (main device);
GS(amp)peak = 0.6 V; tp = 100 s; = 10 %.
VDS = 28 V; IDq = 200 mA (main device);
GS(amp)peak = 0.6 V; tp = 100 s; = 10 %.
V
V
(1) f = 2496 MHz
(2) f = 2690 MHz
(1) f = 2496 MHz
(2) f = 2690 MHz
Fig 3. Power gain as a function of output power;
typical values
Fig 4. Drain efficiency as a function of output power;
typical values
aaa-014565
20
RL
in
(dB)
16
12
8
(2))
(1)
4
0
40
80
120
160
(W)
200
P
L
VDS = 28 V; IDq = 200 mA (main device); VGS(amp)peak = 0.6 V; tp = 100 s; = 10 %.
(1) f = 2496 MHz
(2) f = 2690 MHz
Fig 5. Input return loss as a function of output power; typical values
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
7 of 15
BLC8G27LS-180AV
Power LDMOS transistor
7.6.2 1-Carrier W-CDMA
aaa-014566
aaa-014567
15
50
45
40
35
30
25
20
G
η
D
(%)
p
(dB)
14.6
14.2
13.8
13.4
13
(1)
(2)
(1))
(2))
0
10
20
30
40
(W)
50
0
10
20
30
40
P (W)
L
50
P
L
VDS = 28 V; IDq = 200 mA (main device);
GS(amp)peak = 0.6 V.
VDS = 28 V; IDq = 200 mA (main device);
VGS(amp)peak = 0.6 V.
V
(1) f = 2496 MHz
(2) f = 2690 MHz
(1) f = 2496 MHz
(2) f = 2690 MHz
Fig 6. Power gain as a function of output power;
typical values
Fig 7. Drain efficiency as a function of output power;
typical values
aaa-014568
aaa-014569
20
10
RL
PARR
(dB)
in
(dB)
16
12
8
8
6
(2)
(1)
(2))
(1))
4
2
4
0
10
20
30
40
(W)
50
0
10
20
30
40
P (W)
L
50
P
L
VDS = 28 V; IDq = 200 mA (main device);
GS(amp)peak = 0.6 V.
VDS = 28 V; IDq = 200 mA (main device);
VGS(amp)peak = 0.6 V.
V
(1) f = 2496 MHz
(2) f = 2690 MHz
(1) f = 2496 MHz
(2) f = 2690 MHz
Fig 8. Input return loss as a function of output
power; typical values
Fig 9. Peak-to-average power ratio as a function of
output power; typical values
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
8 of 15
BLC8G27LS-180AV
Power LDMOS transistor
aaa-014570
aaa-014571
-20
5M
-30
ACPR
ACPR
10MM
(dBc)
(dBc)
-25
-40
-50
-60
-70
(1)
-30
-35
-40
-45
(1))
(2))
(2)
0
10
20
30
40
(W)
50
0
10
20
30
40
P (W)
L
50
P
L
VDS = 28 V; IDq = 200 mA (main device);
GS(amp)peak = 0.6 V.
VDS = 28 V; IDq = 200 mA (main device);
VGS(amp)peak = 0.6 V.
V
(1) f = 2496 MHz
(2) f = 2690 MHz
(1) f = 2496 MHz
(2) f = 2690 MHz
Fig 10. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 11. Adjacent channel power ratio (10 MHz) as a
function of output power; typical values
7.6.3 2-Tone VBW
aaa-014572
-10
IMDD33
(dBc)
-20
(1))
(2))
IMDD33
-30
IMDD55
-40
(1))
(2))
-50
-60
-70
IMDD77
(1))
(2))
2
3
1
10
10
10
carrier spacing (MHz)
VDS = 28 V; IDq = 200 mA; fc = 2600 MHz.
(1) IMD low
(2) IMD high
Fig 12. VBW capability in Doherty development board
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
8. Package outline
Air cavity plastic earless flanged package; 6 leads
SOT1275-1
D
F
A
7
w
D
1
B
1
L
U
H
B
v
A
1
1
c
b
1
5
1
2
6
y
Į
Z
1
Z
U
H
E
E
2
1
A
3
4
b
Q
e
w
B
2
y
v
w
1
w
2
0.1
0.5
0.5
0.5
0
5
10 mm
scale
Dimensions
Unit
(1)
A
b
b
c
D
D
1
E
E
1
e
F
H
H
1
L
Q
U
U
2
Z
Z
1
Į
1
1
max 4.01 3.94 1.14 0.178 20.42 20.37 9.80 9.75
mm nom
1.14 19.53 12.80 25.40 1.68 20.70 9.91 3.17 5.79 65°
8.89
3.40 3.68 0.89 0.127 20.12 20.17 9.50 9.55
0.94 19.33 12.60 25.20 1.45 20.50 9.70 2.67 5.29 61°
min
Note
1. Dimension Q is measured 0.1 mm away from the flange.
2. Ringframe and/or ringframe glue shall not overhang at the side of the flange.
sot1275-1_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
16-11-15
17-04-13
SOT1275-1
Fig 13. Package outline SOT1275-1
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 14. ESD sensitivity
ESD model
Class
C2A [1]
2 [2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails
after exposure to an ESD pulse of 750 V.
[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V, but fails
after exposure to an ESD pulse of 4000 V.
10. Abbreviations
Table 15. Abbreviations
Acronym
3GPP
CCDF
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
PAR
Peak-to-Average Ratio
SMD
Surface-Mounted Device
VBW
Video BandWidth
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
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BLC8G27LS-180AV
Power LDMOS transistor
11. Revision history
Table 16. Revision history
Document ID
Release date
20170524
Data sheet status
Change notice
Supersedes
BLC8G27LS-180AV v.5
Modifications:
Product data sheet
-
BLC8G27LS-180AV v.4
• Table 2 on page 2: change simplified outline
• Table 3 on page 2: change version to SOT1275-1
• Figure 13 on page 10: change package outline drawing to SOT1275-1
BLC8G27LS-180AV v.4
BLC8G27LS-180AV v.3
BLC8G27LS-180AV v.2
BLC8G27LS-180AV v.1
20161202
20150901
20150209
20140701
Product data sheet
Product data sheet
Product data sheet
Objective data sheet
-
-
-
-
BLC8G27LS-180AV v.3
BLC8G27LS-180AV v.2
BLC8G27LS-180AV v.1
-
BLC8G27LS-180AV
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© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
12 of 15
BLC8G27LS-180AV
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLC8G27LS-180AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
13 of 15
BLC8G27LS-180AV
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’s warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’s specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’s standard warranty and Ampleon’s product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLC8G27LS-180AV
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
14 of 15
BLC8G27LS-180AV
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
7.4
7.5
7.6
7.6.1
7.6.2
7.6.3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in Doherty operation . . . . . . . . . . 4
Impedance information. . . . . . . . . . . . . . . . . . . 4
Recommended impedances for Doherty design 5
VBW in Doherty operation . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 8
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 11
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2017.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 24 May 2017
Document identifier: BLC8G27LS-180AV
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