BLF178P,112 [ETC]
RF FET LDMOS 110V 28.5DB SOT539A;
| 型号： | BLF178P,112 |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 110V 28.5DB SOT539A 局域网 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：1394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLF178P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications
in the HF to 110 MHz band.
Table 1.
Application information
Test signal
f
VDS
(V)
50
PL
Gp
D
(%)
75
(MHz)
108
108
(W)
(dB)
26
CW
1000
1200
pulsed RF
50
28.5
75
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
Dq of 40 mA, a tp of 100 s with of 20 %:
I
Output power = 1200 W
Power gain = 28.5 dB
Efficiency = 75 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (10 MHz to 110 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
FM transmitter applications
BLF178P
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1
Simplified outline
Graphic symbol
1
2
1
2
drain2
5
3
gate1
3
5
4
3
4
4
gate2
[1]
5
source
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF178P
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
drain current
-
110
0.5 +11
V
-
88
A
Tstg
Tj
storage temperature
junction temperature
65
+150 C
225 C
-
BLF178P#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLF178P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
[1][2]
[3]
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
transient thermal impedance from junction to case
Tj = 150 C
0.14 K/W
0.04 K/W
Tj = 150 C; tp = 100 s; = 20 %
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
001aak924
0.18
Z
th(j-c)
(7)
(K/W)
0.12
(6)
0.06
(5)
(4)
(3)
(2)
(1)
0
10
−7
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
10
t
(s)
p
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
VGS = 0 V; ID = 2.5 mA
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
110
-
-
V
VGS(th)
VGSq
IDSS
gate-source threshold voltage VDS = 10 V; ID = 500 mA 1.25
1.7
1.3
-
2.25
1.8
V
gate-source quiescent voltage VDS = 50 V; ID = 20 mA
drain leakage current VGS = 0 V; VDS = 50 V
0.8
-
V
2.8
A
BLF178P#3
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Product data sheet
Rev. 3 — 1 September 2015
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BLF178P
Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
IDSX drain cut-off current
Min
Typ
Max
Unit
VGS = VGS(th) + 3.75 V;
VDS = 10 V
58
71
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
280
-
nA
RDS(on) drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 16.66 A
0.07
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
-
-
3
-
-
-
pF
pF
pF
Ciss
Coss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
403
138
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
Conditions
PL = 1200 W
PL = 1200 W
PL = 1200 W
Min
27
-
Typ
28.5
16
75
Max
31
Unit
dB
dB
%
Gp
power gain
RLin
D
input return loss
drain efficiency
12
-
71
001aaj113
900
C
oss
(pF)
750
600
450
300
150
0
0
10
20
30
40
V
50
(V)
DS
VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
6.1 Ruggedness in class-AB operation
The BLF178P is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 40 mA; PL = 1200 W pulsed; f = 108 MHz.
BLF178P#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLF178P
Power LDMOS transistor
7. Test information
7.1 Impedance information
Table 8.
Typical impedance
Simulated ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
108
3.91 j3.56
3.59 j1.73
drain
Z
L
gate
Z
S
001aaf059
Fig 3. Definition of transistor impedance
7.2 RF performance
The following figures are measured in a class-AB production test circuit.
7.2.1 1-Tone CW pulsed
aaa-002242
aaa-002243
31
80
66
G
η
D
(%)
P
p
L
(dB)
(dBm)
G
p
29
60
64
Ideal P
(1)
L
(2)
27
25
23
40
20
0
62
60
58
η
D
P
L
100
300
500
700
900 1100 1300 1500
(W)
29
31
33
35
P
P (dBm)
i
L
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1)
PL(1dB) = 60.8 dBm (1214 W)
(2) PL(3dB) = 61.2 dBm (1319 W)
Fig 4. Power gain and drain efficiency as function of
output power; typical values
Fig 5. Output power as a function of input power;
typical values
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Product data sheet
Rev. 3 — 1 September 2015
5 of 13
BLF178P
Power LDMOS transistor
aaa-002244
aaa-002245
32
80
G
η
D
(%)
p
(dB)
30
60
(5)
(4)
(3)
(2)
(1)
28
26
24
40
20
0
(5)
(4)
(3)
(2)
(1)
100
300
500
700
900 1100 1300 1500
100
300
500
700
900 1100 1300 1500
P
L
(W)
P (W)
L
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 0 mA
(2) IDq = 20 mA
(3) IDq = 40 mA
(4) IDq = 80 mA
(5) IDq = 160 mA
(1) IDq = 0 mA
(2) IDq = 20 mA
(3) IDq = 40 mA
(4) IDq = 80 mA
(5) IDq = 160 mA
Fig 6. Power gain as a function of output power;
typical values
Fig 7. Drain efficiency as a function of output power;
typical values
BLF178P#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 13
BLF178P
Power LDMOS transistor
aaa-002246
aaa-002247
32
90
G
(dB)
30
p
η
(4)
(5)
(6)
(7)
D
(3)
(2)
(8)
(%)
(1)
70
28
26
24
22
20
50
30
10
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0
200
400
600
800 1000 1200 1400
(W)
0
200
400
600
800 1000 1200 1400
(W)
P
P
L
L
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 15 V
(2) VDS = 20 V
(3) VDS = 25 V
(4) VDS = 30 V
(5) VDS = 35 V
(6) VDS = 40 V
(7) VDS = 45 V
(8) VDS = 50 V
(1) VDS = 15 V
(2) VDS = 20 V
(3) VDS = 25 V
(4) VDS = 30 V
(5) VDS = 35 V
(6) VDS = 40 V
(7) VDS = 45 V
(8) VDS = 50 V
Fig 8. Power gain as a function of output power;
typical values
Fig 9. Drain efficiency as a function of output power;
typical values
BLF178P#3
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Product data sheet
Rev. 3 — 1 September 2015
7 of 13
BLF178P
Power LDMOS transistor
7.3 Test circuit
C10
+Vds
T2
C5
+Vgs
C7
C12
R1
R3
L5
C14
C15
C20
L7
C1
C2
C21
C22
L1 L3
C3
L2 L4
C16
C18
C17
C4
C19
L8
R2
R4
L6
C13
C8
+Vgs
BLF178P INTPUT REV1
T1
BLF178P OUTPUT REV1
C6
C11
+Vds
23 mm
aaa-002248
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.76 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 10. Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see Figure 10.
Component
Description
Value
Remarks
[1]
C1, C2, C5, C6, C14,
C15, C21, C22
multilayer ceramic chip capacitor 1 nF
[1]
[1]
C3
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 240 pF
multilayer ceramic chip capacitor 4.7 F; 50 V
C4
C7, C8
C10, C11
C12, C13
C16, C17
C18
electrolytic capacitor
1000 F; 63 V
multilayer ceramic chip capacitor 4.7 F; 100 V
multilayer ceramic chip capacitor 120 pF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 110 pF
multilayer ceramic chip capacitor 56 pF
[1]
[1]
[1]
[1]
C19
C20
L1, L2, L3, L4
1.5 turn 0.8 mm copper wire
5 turn 0.8 mm copper wire
2.5 turn 0.8 mm copper wire
D = 3 mm;
length = 2 mm
L5, L6
L7, L8
D = 3 mm;
length = 4.5 mm
D = 3 mm;
length = 3 mm
R1, R2
R3, R4
T1
SMD resistor
SMD resistor
semi rigid coax
semi rigid coax
100
Philips 1206
Philips 1206
UT-090C-25
UT-141C-25
9.1
25 ; 160 mm
25 ; 160 mm
T2
[1] American Technical Ceramics type 800B or capacitor of same quality.
BLF178P#3
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Product data sheet
Rev. 3 — 1 September 2015
8 of 13
BLF178P
Power LDMOS transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
E
1
p
H
U
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
3.30 2.26
3.05 2.01
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53 1.75 17.12 25.53 3.48
9.30 9.27 1.50 16.10 25.27 2.97
41.28 10.29
41.02 10.03
0.18
0.10
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
mm
13.72
0.465
0.455
0.130 0.089
0.120 0.079
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674 1.005 0.137
0.366 0.365 0.059 0.634 0.995 0.117
1.625 0.405
1.615 0.395
0.007
0.004
inches
Note
0.540
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 11. Package outline SOT539A
BLF178P#3
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Product data sheet
Rev. 3 — 1 September 2015
9 of 13
BLF178P
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
10. Abbreviations
Table 10. Abbreviations
Acronym
CW
Description
Continuous Wave
DC
Direct Current
ESD
ElectroStatic Discharge
FM
Frequency Modulation
HF
High Frequency
LDMOS
LDMOST
RF
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
SMD
VSWR
Surface Mounted Device
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
BLF178P#3
Release date
Data sheet status
Product data sheet
Change notice
Supersedes
20150901
-
BLF178P v.2
Modifications:
• The format of this document has been redesigned to comply with the new identity guidelines of
Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLF178P v.2
BLF178P v.1
20120216
Product data sheet
-
BLF178P v.1
-
20110405
Objective data sheet
-
BLF178P#3
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Product data sheet
Rev. 3 — 1 September 2015
10 of 13
BLF178P
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
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Product data sheet
Rev. 3 — 1 September 2015
11 of 13
BLF178P
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
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Product data sheet
Rev. 3 — 1 September 2015
12 of 13
BLF178P
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
3
4
5
6
6.1
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.1
7.2
7.2.1
7.3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF178P#3
相关型号：
BLF1820-90,112
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-2, FET RF Power
NXP
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