BLF2324M8LS200PJ [ETC]
RF FET LDMOS 65V 17.2DB SOT539B;型号: | BLF2324M8LS200PJ |
厂家: | ETC |
描述: | RF FET LDMOS 65V 17.2DB SOT539B |
文件: | 总11页 (文件大小:822K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLF2324M8LS200P
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz
to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
(dB) (%) (dBc)
17.2 32
37 [1]
D
ACPR5M
(MHz)
(mA)
1740
(V)
(W)
1-carrier W-CDMA
2300 to 2400
28
60
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF2324M8LS200P
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain1
Simplified outline
Graphic symbol
1
2
1
2
drain2
5
3
gate1
3
5
4
3
4
4
gate2
[1]
5
source
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF2324M8LS200P
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
case temperature
-
VGS
0.5 +13
V
Tstg
65
+150 C
Tj
-
-
200
150
C
C
[1]
Tcase
[1] Continuous use at maximum temperature will affect the MTTF.
5. Thermal characteristics
Table 5.
Symbol Parameter
Rth(j-c) thermal resistance from junction to case
Thermal characteristics
Conditions
Tcase = 80 C; PL = 60 W
Typ
Unit
0.217 K/W
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 11
BLF2324M8LS200P
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C per section, unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1 mA
65
1.5
-
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 100 mA
VGS = 0 V; VDS = 28 V
1.9
-
2.3
2.8
-
V
A
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
26.8
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
VDS = 10 V; ID = 5.1 A
-
-
-
-
280 nA
forward transconductance
1.2
0.1
-
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.04 A
Table 7.
RF characteristics
Test signal: 1-carrier W-CDMA, PAR = 7.2 dB at 0.01 % probability on the CCDF,
3GPP test model 1; 64 DPCH; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V;
IDq = 1740 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions
Min
Typ Max Unit
power gain
PL(AV) = 60 W
PL(AV) = 60 W
PL(AV) = 60 W
PL(AV) = 60 W
15.8 17.2 -
dB
dB
%
RLin
input return loss
-
11 8
32
37 34
D
drain efficiency
27
-
-
ACPR5M
adjacent channel power ratio (5 MHz)
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2324M8LS200P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 1740 mA; PL = 200 W (CW); f = 2300 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data half section; VDS = 28 V; IDq = 860 mA; typical values unless otherwise
specified.
[1]
[1]
f
ZS
ZL
(MHz)
2300
2400
()
()
4.24 j6.5
7.47 j6.07
1.5 j5.4
1.5 j5.5
[1] ZS and ZL defined in Figure 1.
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 11
BLF2324M8LS200P
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Test circuit
50 mm
50 mm
C11
C9
C13
C7
R1
C1
C3
C15
60 mm
C16
R2
C4
C2
C10
C12
C14
C6
aaa-005517
See Table 9 for list of components.
Fig 2. Component layout
Table 9.
See Figure 2 for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
List of components
Component
C1, C2, C9, C10
C3, C4, C6, C7
C5, C8
Description
Value
Remarks
[1]
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
6.8 F
1 F
[2]
[1]
[2]
33 pF
C11, C12, C13, C14
C15, C16
0.1 F
1000 F; 50 V
5.1
[3]
R1, R2
chip resistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] Vishay Dale or resistor of same quality.
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 11
BLF2324M8LS200P
Power LDMOS transistor
7.4 Graphical data
7.4.1 1-Tone CW
aaa-005518
19
18
17
16
15
14
13
60
G
ηη
D
(%)
p
(dB)
50
40
30
20
10
0
(1))
(2))
G
p
(1))
(2))
η
D
42
44
46
48
50
52
54
56
P
(dBm)
L
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
7.4.2 1-Tone CW pulsed
aaa-005519
19
18
17
16
15
14
13
60
50
40
30
20
10
0
G
ηη
D
(%)
p
(dB)
(1))
(2))
G
p
(1))
(2))
η
D
42
44
46
48
50
52
54
56
P
(dBm)
L
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 4. Power gain and drain efficiency as function of output power; typical values
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 11
BLF2324M8LS200P
Power LDMOS transistor
7.4.3 1-Carrier W-CDMA
aaa-005685
aaa-005686
19
18
17
16
15
14
13
60
50
40
30
20
10
0
-25
5M
G
ηη
ACPR
(dBc)
p
D
(dB)
(%)
-30
G
p
(1)
(2)
-35
-40
-45
-50
-55
(2))
(1))
η
D
(1)
(2)
42
44
46
48
50
52
42
44
46
48
50
52
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1740 mA.
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Adjacent power channel ratio (5 MHz) as a
function of output power; typical values
aaa-005745
8
PARR
(dB)
7
6
5
4
3
(1))
(2))
42
44
46
48
50
52
P
(dBm)
L
VDS = 28 V; IDq = 1740 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 7. Peak-to-average ratio as a function of output power; typical values
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
6 of 11
BLF2324M8LS200P
Power LDMOS transistor
8. Package outline
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
U
2
E
H
1
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5
nom
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
mm
13.72
0.54
0.25 0.25
0.01 0.01
min 4.2 11.56 0.10 30.94 30.96 9.3
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
inches
Note
0.059 0.634 0.995 0.117 0.079 1.265 0.395
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 8. Package outline SOT539B
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
7 of 11
BLF2324M8LS200P
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
3GPP
CCDF
DPCH
CW
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Dedicated Physical Channel
Continuous Wave
ESD
ElectroStatic Discharge
LDMOS
MTTF
PAR
Laterally Diffused Metal Oxide Semiconductor
Mean Time To Failure
Peak-to-Average Ratio
VSWR
W-CDMA
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20150901 Product data sheet
Change notice Supersedes
- BLF2324M8LS200P v.1
BLF2324M8LS200P#2
Modifications:
• The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLF2324M8LS200P v.1
20140603
Product data sheet
-
-
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
8 of 11
BLF2324M8LS200P
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF2324M8LS200P#2
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Product data sheet
Rev. 2 — 1 September 2015
9 of 11
BLF2324M8LS200P
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLF2324M8LS200P#2
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
10 of 11
BLF2324M8LS200P
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
7.1
7.2
7.3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 5
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
7.4
7.4.1
7.4.2
7.4.3
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF2324M8LS200P#2
相关型号:
BLF241
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-39/3, TO-39/3, 3 PIN, FET RF Small Signal
NXP
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