BLF8G10LS-160,112 [ETC]

RF FET LDMOS 65V 19.7DB SOT502B;
BLF8G10LS-160,112
型号: BLF8G10LS-160,112
厂家: ETC    ETC
描述:

RF FET LDMOS 65V 19.7DB SOT502B

文件: 总13页 (文件大小:1599K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BLF8G10L-160;  
BLF8G10LS-160  
Power LDMOS transistor  
Rev. 4 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
160 W LDMOS power transistor for base station applications at frequencies from  
920 MHz to 960 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.  
Test signal  
f
IDq  
VDS  
(V)  
30  
PL(AV)  
(W)  
Gp  
D  
ACPR  
(dBc)  
38 [1]  
(MHz)  
(mA)  
1100  
(dB)  
19.7  
(%)  
29  
2-carrier W-CDMA  
920 to 960  
35  
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.  
Carrier spacing 5 MHz.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low Rth providing excellent thermal stability  
Designed for broadband operation (920 MHz to 960 MHz)  
Lower output capacitance for improved performance in Doherty applications  
Designed for low memory effects providing excellent pre-distortability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for W-CDMA base stations and multi carrier applications in the  
920 MHz to 960 MHz frequency range  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF8G10L-160 (SOT502A)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
BLF8G10LS-160 (SOT502B)  
1
2
3
drain  
gate  
1
1
3
2
[1]  
source  
2
3
sym112  
[1] Connected to flange  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF8G10L-160  
BLF8G10LS-160  
-
flanged LDMOST ceramic package; 2 mounting holes;  
2 leads  
SOT502A  
-
earless flanged LDMOST ceramic package; 2 leads  
SOT502B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
-
VGS  
Tstg  
0.5 +13  
V
65  
+150 C  
Tj  
-
200  
C  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Typ Unit  
Rth(j-c)  
thermal resistance from junction to case  
Tcase = 80 C; PL = 35 W;  
0.50 K/W  
VDS = 30 V; IDq = 1100 mA  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
2 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
Characteristics  
Tj = 25 C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
-
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA  
65  
-
V
VGS(th)  
IDSS  
gate-source threshold voltage  
drain leakage current  
VDS = 10 V; ID = 220 mA 1.5  
2.0  
-
2.3  
5
V
VGS = 0 V; VDS = 28 V  
-
-
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
37.0  
-
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 7.7 A  
-
-
-
-
0.5  
A  
S
forward transconductance  
14.6  
86  
-
-
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 7.7 A  
m  
7. Test information  
Table 7.  
Functional test information  
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;  
3GPP test model 1; 64 DPCH; f1 = 920 MHz; f2 = 925 MHz; f3 = 955 MHz; f4 = 960 MHz;  
RF performance at VDS = 30 V; IDq = 1100 mA; Tcase = 25 C; unless otherwise specified; in a  
class-AB production test circuit.  
Symbol  
Gp  
Parameter  
Conditions  
Min Typ  
Max Unit  
power gain  
PL(AV) = 35 W  
PL(AV) = 35 W  
PL(AV) = 35 W  
PL(AV) = 35 W  
19  
-
19.7  
15  
29  
-
dB  
dB  
%
RLin  
input return loss  
drain efficiency  
adjacent channel power ratio  
10  
-
D  
27  
-
ACPR  
38  
34  
dBc  
7.1 Ruggedness in class-AB operation  
The BLF8G10L-160 and BLF8G10LS-160 are capable of withstanding a load mismatch  
corresponding to VSWR = 10 : 1 through all phases under the following conditions:  
V
DS = 30 V; IDq = 1100 mA; PL = 130 W (CW); f = 920 MHz to 960 MHz.  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
3 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
7.2 Impedance information  
Table 8.  
Typical impedance information  
IDq = 1100 mA; main transistor VDS = 30 V.  
ZS and ZL defined in Figure 1.  
f
ZS  
ZL  
(MHz)  
925  
942  
960  
()  
()  
4.0 j3.8  
4.4 j4.2  
4.6 j4.1  
1.7 j2.5  
1.5 j2.2  
1.4 j2.3  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
7.3 CW pulse  
aaa-001287  
aaa-001288  
21  
70  
60  
50  
40  
30  
20  
10  
21  
70  
60  
50  
40  
30  
20  
10  
G
p
η
G
p
η
D
(%)  
D
G
p
(dB)  
(dB)  
(%)  
G
p
19  
19  
(1)  
(1)  
η
D
(2)  
(3)  
(2)  
(3)  
η
D
17  
15  
17  
15  
44  
46  
48  
50  
52  
54  
(dBm)  
0
50  
100  
150  
200  
250  
P (W)  
L
P
L
VDS = 30 V; IDq = 1100 mA.  
VDS = 30 V; IDq = 1100 mA.  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
Fig 2. Power gain and drain efficiency as function of  
output power; typical values  
Fig 3. Power gain and drain efficiency as function of  
output power; typical values  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
4 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
aaa-001289  
-10  
in  
RL  
(dB)  
-13  
(3)  
(2)  
(1)  
-16  
-19  
-22  
-25  
44  
46  
48  
50  
52  
54  
(dBm)  
P
L
VDS = 30 V; IDq = 1100 mA.  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
Fig 4. Input return loss as a function of output power; typical values  
7.4 2-Carrier W-CDMA  
aaa-001290  
aaa-001291  
21  
60  
50  
40  
30  
20  
10  
0
21  
60  
50  
40  
30  
20  
10  
0
G
p
η
G
p
η
D
(%)  
D
(dB)  
20  
(dB)  
20  
(%)  
G
G
p
p
(1) (2) (3)  
(1) (2) (3)  
19  
18  
17  
16  
15  
19  
18  
17  
16  
15  
η
D
η
D
38  
42  
46  
50  
0
20  
40  
60  
80  
100  
P (W)  
L
P
(dBm)  
L
VDS = 30 V; IDq = 1100 mA.  
VDS = 30 V; IDq = 1100 mA.  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
Fig 5. Power gain and drain efficiency as function of  
output power; typical values  
Fig 6. Power gain and drain efficiency as function of  
output power; typical values  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
5 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
aaa-001292  
aaa-001293  
-10  
in  
-20  
RL  
ACPR  
(dBc)  
(dB)  
ACPR  
5M  
-14  
-30  
-40  
-50  
-60  
(3)  
-18  
-22  
-26  
(2)  
(1)  
ACPR  
10M  
(1) (2) (3)  
38  
42  
46  
50  
38  
42  
46  
50  
P
L
(dBm)  
P (dBm)  
L
VDS = 30 V; IDq = 1100 mA.  
VDS = 30 V; IDq = 1100 mA.  
(1) f = 920 MHz  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
Fig 7. Input return loss as a function of  
output power; typical values  
Fig 8. Adjacent channel power ratio (5 MHz and  
10 MHz) as function of output power; typical  
values  
aaa-001294  
9
PAR  
(dB)  
8
7
6
(1)  
(2)  
(3)  
5
38  
42  
46  
50  
P
(dBm)  
L
VDS = 30 V; IDq = 1100 mA.  
(1) f = 920 MHz  
(2) f = 940 MHz  
(3) f = 960 MHz  
Fig 9. Peak-to-average ratio as a function of output power; typical values  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
6 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
7.5 Circuit  
C11  
C12  
C5  
C15  
C8  
C2  
C7  
C1  
C4  
C9 C10  
C3  
C6  
C13  
C14  
C16  
aaa-001295  
Printed-Circuit Board (PCB): Rogers RO4350; r = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 m.  
The vias can be used as a reference to place components.  
The above layout shows the test circuit used to measure the devices in production. A more appropriate application  
demonstration for specific customer needs can be provided.  
See Table 9 for list of components.  
Fig 10. Component layout  
Table 9.  
List of components  
See Figure 10 for component layout.  
Component  
Description  
Value  
Remarks  
ATC 800B  
Murata  
C1, C2, C3, C4, C5, C6  
C7, C9, C12, C14  
C8, C10, C11, C13  
C15, C16  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
82 pF  
10 F  
1 F  
Murata  
470 F; 63 V  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
7 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
8. Package outline  
Flanged ceramic package; 2 mounting holes; 2 leads  
SOT502A  
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
H
U
1
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT  
1
1
1
2
1
12.83  
12.57  
3.38  
3.12  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
34.16 9.91  
33.91 9.65  
0.15  
0.08  
27.94  
1.100  
0.25  
0.01  
0.51  
0.02  
mm  
0.505  
0.495  
0.133 0.067  
0.123 0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
1.345 0.390  
1.335 0.380  
0.006  
0.003  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
03-01-10  
12-05-02  
SOT502A  
Fig 11. Package outline SOT502A  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
8 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
Earless flanged ceramic package; 2 leads  
SOT502B  
D
A
F
3
D
D
1
c
U
1
1
L
E
E
H
U
1
2
2
w
5
b
M
M
D
Q
2
0
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
E
E
F
H
L
Q
U
U
w
2
UNIT  
1
1
1
2
12.83  
12.57  
1.70  
1.45  
4.72  
3.43  
20.02 19.96 9.50  
19.61 19.66 9.30  
9.53  
9.25  
1.14 19.94 5.33  
0.89 18.92 4.32  
20.70 9.91  
20.45 9.65  
0.15  
0.08  
0.25  
mm  
0.505  
0.495  
0.067  
0.057  
0.186  
0.135  
0.788 0.786 0.374 0.375 0.045 0.785 0.210  
0.772 0.774 0.366 0.364 0.035 0.745 0.170  
0.815 0.390  
0.805 0.380  
0.006  
0.003  
0.010  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
07-05-09  
12-05-02  
SOT502B  
Fig 12. Package outline SOT502B  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
9 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
9. Abbreviations  
Table 10. Abbreviations  
Acronym  
3GPP  
CCDF  
CW  
Description  
Third Generation Partnership Project  
Complementary Cumulative Distribution Function  
Continuous Wave  
DPCH  
ESD  
Dedicated Physical CHannel  
ElectroStatic Discharge  
LDMOS  
LDMOST  
PAR  
Laterally Diffused Metal Oxide Semiconductor  
Laterally Diffused Metal Oxide Semiconductor Transistor  
Peak-to-Average power Ratio  
Radio Frequency  
RF  
VSWR  
W-CDMA  
Voltage Standing Wave Ratio  
Wideband Code Division Multiple Access  
10. Revision history  
Table 11. Revision history  
Document ID  
Release  
date  
Data sheet status  
Change notice Supersedes  
BLF8G10L-160_8G10LS-160#4  
Modifications:  
20150901  
Product data sheet  
-
BLF8G10L-160_8G10LS-160  
v.3  
The format of this document has been redesigned to comply with the new identity  
guidelines of Ampleon.  
Legal texts have been adapted to the new company name where appropriate.  
BLF8G10L-160_8G10LS-160 v.3 20120216  
BLF8G10L-160_8G10LS-160 v.2 20111121  
BLF8G10L-160_8G10LS-160 v.1 20110519  
Product data sheet  
Preliminary data sheet  
Objective data sheet  
BLF8G10L-160_8G10LS-160  
v.2  
BLF8G10L-160_8G10LS-160  
v.1  
-
-
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
10 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
11.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
11.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’ aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
11 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own Any  
reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’ warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’ specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’ standard warranty and Ampleon’ product  
specifications.  
12. Contact information  
For more information, please visit:  
http://www.ampleon.com  
For sales office addresses, please visit:  
http://www.ampleon.com/sales  
BLF8G10L-160_8G10LS-160#4  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 4 — 1 September 2015  
12 of 13  
BLF8G10L-160; BLF8G10LS-160  
Power LDMOS transistor  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Impedance information . . . . . . . . . . . . . . . . . . . 4  
CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5  
Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
7.1  
7.2  
7.3  
7.4  
7.5  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon The Netherlands B.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 1 September 2015  
Document identifier: BLF8G10L-160_8G10LS-160#4  

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