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BLF8G20LS-200V,112 [ETC]

RF FET LDMOS 65V 17DB SOT1120B;
BLF8G20LS-200V,112
型号： BLF8G20LS-200V,112
厂家： ETC    ETC
描述：

RF FET LDMOS 65V 17DB SOT1120B
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BLF8G20LS-200V  
Power LDMOS transistor  
Rev. 5 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
200 W LDMOS power transistor with improved video bandwidth for base station  
applications at frequencies from 1800 MHz to 2000 MHz.  
Table 1.  
Typical performance  
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.  
Test signal  
f
IDq  
VDS  
(V)  
28  
PL(AV)  
(W)  
Gp  
D  
(%) (dBc)  
33  
30[1]  
ACPR  
(MHz)  
(mA)  
1600  
(dB)  
17.5  
2-carrier W-CDMA  
1805 to 1880  
55  
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;  
carrier spacing 5 MHz.  
1.2 Features and benefits  
Excellent ruggedness  
High efficiency  
Low Rth providing excellent thermal stability  
Decoupling leads to enable improved video bandwidth (80 MHz typical)  
Designed for low memory effects providing excellent pre-distortability  
Internally matched for ease of use  
Integrated ESD protection  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
RF power amplifiers for W-CDMA base stations and multi carrier applications in the  
1800 MHz to 2000 MHz frequency range  
BLF8G20LS-200V  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
drain  
Simplified outline  
Graphic symbol  
1
1, 4, 5  
4
5
2
gate  
[1]  
3
source  
2
3
4,5  
6
video decoupling  
n.c.  
3
aaa-003884  
6
7
2
7
n.c.  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF8G20LS-200V  
-
earless flanged LDMOST ceramic package; 6 leads  
SOT1120B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
65  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
case temperature  
-
VGS  
0.5 +13  
V
Tstg  
65  
+150  
200  
C  
C  
C  
Tj  
-
-
[1]  
Tcase  
150  
[1] Continuous use at maximum temperature will affect MTTF  
5. Recommended operating conditions  
Table 5.  
Symbol  
Tcase  
Operating conditions  
Parameter  
Conditions  
Min  
Max  
+125  
Unit  
C  
case temperature  
40  
6. Thermal characteristics  
Table 6.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Tcase = 80 C; PL = 55 W  
Typ  
Unit  
Rth(j-c)  
thermal resistance from junction to case  
0.27  
K/W  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
2 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
7. Characteristics  
Table 7.  
DC characteristics  
Tj = 25 C, unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
-
Max Unit  
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA  
65  
-
V
VGS(th)  
VGSq  
IDSS  
gate-source threshold voltage  
gate-source quiescent voltage  
drain leakage current  
VDS = 10 V; ID = 270 mA 1.5  
1.9  
2.1  
-
2.3  
2.5  
4.2  
-
V
VDS = 28 V; ID = 1.6 A  
VGS = 0 V; VDS = 28 V  
1.7  
V
-
-
A  
A
IDSX  
drain cut-off current  
VGS = VGS(th) + 3.75 V;  
VDS = 10 V  
50.6  
IGSS  
gfs  
gate leakage current  
VGS = 11 V; VDS = 0 V  
VDS = 10 V; ID = 13.5 A  
-
-
-
-
420  
nA  
S
forward transconductance  
19.6  
0.057  
-
-
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;  
ID = 9.45 A  
Table 8.  
RF characteristics  
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on CCDF; 3GPP test model 1;  
64 DPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz; f4 = 1877.5 MHz; RF performance  
at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a production circuit.  
Symbol  
Gp  
Parameter  
Conditions  
Min  
16.3  
29  
-
Typ  
Max  
Unit  
dB  
power gain  
PL(AV) = 55 W  
PL(AV) = 55 W  
PL(AV) = 55 W  
PL(AV) = 55 W  
17.5 19.2  
D  
drain efficiency  
input return loss  
adjacent channel power ratio  
33  
-
%
RLin  
15  
30  
7  
26  
dB  
ACPR  
-
dBc  
8. Test information  
8.1 Ruggedness in class-AB operation  
The BLF8G20LS-200V is capable of withstanding a load mismatch corresponding to  
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;  
IDq = 1600 mA; PL = 200 W (CW); f = 1805 MHz.  
8.2 Impedance information  
Table 9.  
Typical impedance  
Measured load-pull data; IDq = 1600 mA; VDS = 28 V.  
[1]  
[1]  
f
ZS  
ZL  
(MHz)  
1805  
1843  
1880  
()  
()  
1.01 j3.66  
1.12 j3.97  
1.37 j4.20  
1.04 j2.44  
1.04 j2.44  
1.04 j2.44  
[1] ZS and ZL defined in Figure 1.  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
3 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
drain  
Z
L
gate  
Z
S
001aaf059  
Fig 1. Definition of transistor impedance  
8.3 Test circuit  
60 mm  
60 mm  
C11  
C8  
C1  
C2  
C6  
C4  
R1  
C10  
C3  
60  
mm  
C5  
C7  
C9  
aaa-003907  
See Table 10 for list of components.  
Fig 2. Component layout  
Table 10. List of components  
See Figure 2 for component layout.  
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.  
Component  
C1  
Description  
Value  
4.7 F  
20 pF  
4.7 F  
8.2 pF  
4.7 F  
20 pF  
Remarks  
[1]  
[2]  
[3]  
[4]  
[3]  
[4]  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
Murata  
ATC100B  
TDK  
C2, C3  
C4, C5  
C6, C7  
C8, C9  
C10  
ATC800B  
TDK  
ATC800B  
C11  
470 F, 63 V  
4.7   
R1  
chip resistor  
1206  
[1] Murata or capacitor of same quality.  
[2] American Technical Ceramics type 100B or capacitor of same quality.  
[3] TDK or capacitor of same quality.  
[4] American Technical Ceramics type 800B or capacitor of same quality.  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
4 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
8.4 Graphical data  
8.4.1 1-Tone CW  
aaa-003885  
aaa-003887  
20  
18  
16  
14  
12  
60  
50  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(1)  
(2)  
(3)  
(3)  
(2)  
(1)  
0
50  
100  
150  
200  
(W)  
250  
0
50  
100  
150  
200  
(W)  
250  
P
L(AV)  
P
L(AV)  
VDS = 28 V; IDq = 1600 mA.  
VDS = 28 V; IDq = 1600 mA.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 3. Power gain as a function of average output  
power; typical values  
Fig 4. Drain efficiency as a function of average  
output power; typical values  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
5 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
8.4.2 1-Carrier W-CDMA  
aaa-003888  
aaa-003891  
20  
19  
18  
17  
16  
15  
50  
40  
30  
20  
10  
0
8
7
6
5
4
G
ηη  
PAR  
(dB)  
p
D
(dB)  
(%)  
(1)  
(2)  
(3)  
G
p
(1)  
(2)  
(3)  
(3)  
(2)  
(1)  
η
D
0
20  
40  
60  
80  
100  
(W)  
120  
0
25  
50  
75  
100  
(W)  
125  
P
P
L(AV)  
L(AV)  
VDS = 28 V; IDq = 1600 mA; PAR = 7.2 dB at 0.01  
VDS = 28 V; IDq = 1600 mA; PAR = 7.2 dB at 0.01   
probability on the CCDF.  
probability on the CCDF.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 5. Power gain and drain efficiency as function of  
average output power; typical values  
Fig 6. Peak-to-average power ratio as a function of  
average output power; typical values  
aaa-003894  
-25  
ACPR  
5M  
(dBc)  
-30  
-35  
-40  
-45  
-50  
-55  
(3)  
(2)  
(1)  
0
20  
40  
60  
80  
100  
(W)  
120  
P
L(AV)  
VDS = 28 V; IDq = 1600 mA; PAR = 7.2 dB at 0.01 probability on the CCDF.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 7. Adjacent power channel ratio (5 MHz) as a function of average output power; typical values  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
6 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
8.4.3 2-Carrier W-CDMA  
aaa-003896  
aaa-003898  
20  
19  
18  
17  
16  
15  
50  
40  
30  
20  
10  
0
19.0  
G
η
G
p
p
D
(dB)  
(%)  
(dB)  
(3)  
(2)  
(1)  
18.5  
G
p
18.0  
17.5  
17.0  
η
D
0
20  
40  
60  
80  
100  
(W)  
120  
0
20  
40  
60  
80  
100  
(W)  
120  
P
P
L(AV)  
L(AV)  
VDS = 28 V; IDq = 1600 mA; f = 1843 MHz;  
VDS = 28 V; IDq = 1600 mA; channel spacing = 5 MHz;  
channel spacing = 5 MHz; PAR = 8.4 dB at 0.01   
PAR = 8.4 dB at 0.01 probability on the CCDF.  
probability on the CCDF.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 8. Power gain and drain efficiency as function of  
average output power; typical values  
Fig 9. Power gain as a function of average output  
power; typical values  
aaa-003900  
aaa-003902  
50  
-15  
η
ACPR  
5M  
D
(%)  
(dBc)  
40  
30  
20  
10  
0
-25  
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
-35  
-45  
-55  
0
20  
40  
60  
80  
100  
(W)  
120  
0
20  
40  
60  
80  
100  
(W)  
120  
P
P
L(AV)  
L(AV)  
VDS = 28 V; IDq = 1600 mA; channel spacing = 5 MHz;  
VDS = 28 V; IDq = 1600 mA; channel spacing = 5 MHz;  
PAR = 8.4 dB at 0.01 probability on the CCDF.  
PAR = 8.4 dB at 0.01 probability on the CCDF.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 10. Drain efficiency as a function of average  
output power; typical values  
Fig 11. Adjacent power channel ratio (5 MHz) as a  
function of average output power; typical  
values  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
7 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
8.4.4 IS-95  
aaa-003903  
aaa-003904  
19  
50  
40  
30  
20  
10  
0
G
η
D
(%)  
p
(dB)  
(3)  
(2)  
(1)  
18.5  
18  
(1)  
(2)  
(3)  
17.5  
17  
0
15  
30  
45  
60  
75  
90  
0
15  
30  
45  
60  
75  
90  
P
(W)  
P
(W)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 1600 mA.  
VDS = 28 V; IDq = 1600 mA.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 12. Power gain as a function of average output  
power; typical values  
Fig 13. Drain efficiency as a function of average  
output power; typical values  
aaa-003905  
aaa-003906  
-30  
885k  
(dBc)  
-50  
ACPR  
ACPR  
1980k  
(dBc)  
-55  
-60  
-65  
-70  
-75  
-80  
-40  
-50  
-60  
-70  
(3)  
(2)  
(1)  
(3)  
(2)  
(1)  
0
15  
30  
45  
60  
75  
90  
0
15  
30  
45  
60  
75  
90  
P
(W)  
P
(W)  
L(AV)  
L(AV)  
VDS = 28 V; IDq = 1600 mA.  
VDS = 28 V; IDq = 1600 mA.  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
(1) f = 1805 MHz  
(2) f = 1843 MHz  
(3) f = 1880 MHz  
Fig 14. Adjacent power channel ratio (885 kHz) as a  
function of average output power;  
typical values  
Fig 15. Adjacent power channel ratio (1980 kHz) as a  
function of average output power; typical  
values  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
8 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
8.4.5 2-Tone VBW  
aaa-005353  
-10  
IMDD  
(dBc)  
-20  
-30  
-40  
-50  
-60  
(1))  
(2))  
IMD3  
IMD5  
IMD7  
(1))  
(2))  
(1))  
(2))  
-70  
1
2
10  
10  
carrier spacing (MHz)  
VDS = 28 V; IDq = 1600 mA; fc = 1843 MHz.  
(1) low  
(2) high  
Fig 16. VBW capacity in class-AB test circuit  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
9 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
9. Package outline  
Earless flanged LDMOST ceramic package; 6 leads  
SOT1120B  
D
A
F
3
D
1
D
L
c
U
1
1
4
5
y
α
Z
U
E
1
H
Z
2
Z
E
1
2
6
b
7
2
Q
b
w
D
1
2
0
5
10 mm  
scale  
Dimensions  
(1)  
(2)  
Q
Unit  
A
b
b
c
D
D
E
E
F
H
L
U
1
U
2
w
y
Z
Z
1
Z
2
α
1
1
1
2
0.10  
max 4.75 1.83 12.83 0.18 20.02 19.96 9.53 9.53 1.14 19.94 3.56 1.70 20.70 9.91  
4.60 9.53 15.52 64°  
mm nom  
0.51  
0.02  
min 3.45 1.57 12.57 0.10 19.61 19.66 9.27 9.25 0.89 18.92 3.30 1.45 20.45 9.65  
max 0.187 0.072 0.505 0.007 0.788 0.786 0.375 0.375 0.045 0.785 0.140 0.067 0.815 0.39  
4.32 8.71 14.50 60°  
0.004 0.181 0.375 0.611 64°  
0.170 0.343 0.571 60°  
inches nom  
min 0.136 0.062 0.495 0.004 0.772 0.774 0.365 0.364 0.035 0.745 0.130 0.057 0.805 0.38  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. dimension is measured 0.030 inch (0.76 mm) from the body.  
sot1120b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-06-14  
13-10-21  
SOT1120B  
Fig 17. Package outline SOT1120B  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
10 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
10. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
11. Abbreviations  
Table 11. Abbreviations  
Acronym  
3GPP  
Description  
3rd Generation Partnership Project  
Complementary Cumulative Distribution Function  
Continuous Wave  
CCDF  
CW  
DPCH  
ESD  
Dedicated Physical CHannel  
ElectroStatic Discharge  
LDMOS  
LDMOST  
MTTF  
Laterally Diffused Metal Oxide Semiconductor  
Laterally Diffused Metal Oxide Semiconductor Transistor  
Mean Time To Failure  
PAR  
Peak-to-Average Ratio  
VSWR  
VBW  
Voltage Standing Wave Ratio  
Video BandWidth  
W-CDMA  
Wideband Code Division Multiple Access  
12. Revision history  
Table 12. Revision history  
Document ID  
Release date  
20150901  
Data sheet status  
Change notice  
Supersedes  
BLF8G20LS-200V#5  
Modifications:  
Product data sheet  
BLF8G20LS-200V v.4  
• The format of this document has been redesigned to comply with the new identity  
guidelines of Ampleon.  
• Legal texts have been adapted to the new company name where appropriate.  
BLF8G20LS-200V v.4  
BLF8G20LS-200V v.3  
BLF8G20LS-200V v.2  
BLF8G20LS-200V v.1  
20131021  
20130121  
20121012  
20120704  
Product data sheet  
Product data sheet  
Product data sheet  
Objective data sheet  
-
-
-
-
BLF8G20LS-200V v.3  
BLF8G20LS-200V v.2  
BLF8G20LS-200V v.1  
-
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
11 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.ampleon.com.  
Ampleon product can reasonably be expected to result in personal injury,  
13.2 Definitions  
death or severe property or environmental damage. Ampleon and its  
suppliers accept no liability for inclusion and/or use of Ampleon products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Ampleon does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Ampleon makes no representation  
or warranty that such applications will be suitable for the specified use without  
further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Ampleon sales office. In  
case of any inconsistency or conflict with the short data sheet, the full data  
sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Ampleon products, and Ampleon accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Ampleon product is suitable and  
fit for the customer’s applications and products planned, as well as for the  
planned application and use of customer’s third party customer(s). Customers  
should provide appropriate design and operating safeguards to minimize the  
risks associated with their applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Ampleon and its customer, unless Ampleon and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be valid  
in which the Ampleon product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
Ampleon does not accept any liability related to any default, damage, costs or  
problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Ampleon products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Ampleon does not accept any  
liability in this respect.  
13.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Ampleon does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. Ampleon takes no responsibility for  
the content in this document if provided by an information source outside of  
Ampleon.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall Ampleon be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost profits,  
lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Ampleon products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written  
individual agreement. In case an individual agreement is concluded only the  
terms and conditions of the respective agreement shall apply. Ampleon  
hereby expressly objects to applying the customer’s general terms and  
conditions with regard to the purchase of Ampleon products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Ampleon’ aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Ampleon.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Ampleon reserves the right to make changes to  
information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Suitability for use — Ampleon products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction of an  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
12 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Ampleon product is automotive qualified, the product  
is not suitable for automotive use. It is neither qualified nor tested in  
accordance with automotive testing or application requirements. Ampleon  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Any reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own Any  
reference or use of any ‘NXP’ trademark in this document or in or on the  
surface of Ampleon products does not result in any claim, liability or  
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of  
the NXP group of companies and any reference to or use of the ‘NXP’  
trademarks will be replaced by reference to or use of Ampleon’s own  
trademarks.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Ampleon’ warranty of the product for such  
automotive applications, use and specifications, and (b) whenever customer  
uses the product for automotive applications beyond Ampleon’ specifications  
such use shall be solely at customer’s own risk, and (c) customer fully  
indemnifies Ampleon for any liability, damages or failed product claims  
resulting from customer design and use of the product for automotive  
applications beyond Ampleon’ standard warranty and Ampleon’ product  
specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
14. Contact information  
For more information, please visit:  
http://www.ampleon.com  
For sales office addresses, please visit:  
http://www.ampleon.com/sales  
BLF8G20LS-200V#5  
All information provided in this document is subject to legal disclaimers.  
© Ampleon The Netherlands B.V. 2015. All rights reserved.  
Product data sheet  
Rev. 5 — 1 September 2015  
13 of 14  
BLF8G20LS-200V  
Power LDMOS transistor  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Recommended operating conditions. . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 2  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
8
8.1  
8.2  
8.3  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3  
Ruggedness in class-AB operation . . . . . . . . . 3  
Impedance information . . . . . . . . . . . . . . . . . . . 3  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5  
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
1-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6  
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7  
IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
2-Tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
8.4  
8.4.1  
8.4.2  
8.4.3  
8.4.4  
8.4.5  
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Handling information. . . . . . . . . . . . . . . . . . . . 11  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© Ampleon The Netherlands B.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.ampleon.com  
For sales office addresses, please visit: http://www.ampleon.com/sales  
Date of release: 1 September 2015  
Document identifier: BLF8G20LS-200V#5  

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