BLL8H1214L-500U [ETC]
RF FET LDMOS 100V 17DB SOT539A;型号: | BLL8H1214L-500U |
厂家: | ETC |
描述: | RF FET LDMOS 100V 17DB SOT539A |
文件: | 总20页 (文件大小:1386K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLL8H1214L-500;
BLL8H1214LS-500
LDMOS L-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to
1.4 GHz range.
Table 1.
Test information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB
production test circuit.
Test signal
f
VDS
(V)
50
PL
Gp
D
tr
tf
(GHz)
(W)
500
(dB)
17
(%)
50
(ns)
20
(ns)
6
pulsed RF
1.2 to 1.4
1.2 Features and benefits
Easy power control
Integrated dual side ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency
range
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLL8H1214L-500 (SOT539A)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
BLL8H1214LS-500 (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
1
3
2
4
1
5
3
5
4
[1]
2
sym117
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLL8H1214L-500
BLL8H1214LS-500
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
SOT539A
-
earless flanged balanced ceramic package; 4 leads
SOT539B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
100
+13
VGS
Tstg
6
65
-
V
+150 C
225 C
[1]
Tj
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Zth(j-c)
transient thermal impedance from
junction to case
Tcase = 85 C; PL = 500 W
tp = 100 s; = 10 %
tp = 200 s; = 10 %
tp = 300 s; = 10 %
tp = 100 s; = 20 %
0.046 K/W
0.059 K/W
0.069 K/W
0.064 K/W
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
-
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA
100
-
V
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 270 mA 1.3
1.8
-
2.2
VGS = 0 V; VDS = 50 V
-
1.4 A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
32
42
-
A
IGSS
gfs
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140 nA
forward transconductance
VDS = 10 V; ID = 270 mA 1.7
3
-
S
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 9.5 A
-
100
164 m
Table 7.
RF characteristics
Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 150 mA;
Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit.
Symbol
VDS
Parameter
Conditions
PL = 500 W
PL = 500 W
PL = 500 W
Min Typ Max Unit
drain-source voltage
power gain
-
-
50
-
V
Gp
15
-
17
10
600
50
0
dB
dB
W
%
RLin
input return loss
-
PL(1dB)
D
output power at 1 dB gain compression
drain efficiency
-
-
PL = 500 W
PL = 500 W
PL = 500 W
PL = 500 W
45
-
-
Pdroop(pulse) pulse droop power
0.3
50
50
dB
ns
ns
tr
tf
rise time
fall time
-
20
6
-
7. Test information
7.1 Ruggedness in class-AB operation
The BLL8H1214L-500 and BLL8H1214LS-500 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 s; = 10 %.
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.2 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
(GHz)
1.2
1.3
1.4
()
()
1.268 j2.623
2.193 j2.457
2.359 j2.052
2.987 j1.664
2.162 j1.326
1.604 j1.887
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.3 Test circuit
Table 9.
List of components
For test circuit see Figure 2.
Component
Description
multilayer ceramic chip capacitor
Value
Remarks
C1
22 F, 35 V
51 pF
[1]
[1]
[2]
[1]
[3]
[3]
C2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
C3, C4
100 pF
1 nF
C5, C11, C12
C6
47 pF
C7, C8, C10
51 pF
C9
100 pF
10 F, 63 V
56
C13
R1
SMD resistor
SMD 0603
R2
metal film resistor
51
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
BLL8H1214L-500_1214LS-500#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
C10
C12
C4
C3
C5
C2
C11
C9
C8
C1
C13
R1
R2
C6
C7
001aaj490
Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2. Component layout for class-AB production test circuit
7.4 RF performance graphs
7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C
aaa-005403
aaa-005404
800
20
16
12
8
P
G
p
(dB)
L
(W)
(1)
(2)
(3)
(1))
(2))
(3))
600
400
200
0
4
0
0
4
8
12
16
P (W)
20
0
100
200
300
400
500
600
(W)
700
P
i
L
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 3. Output power as a function of input power;
typical values
Fig 4. Power gain as a function of output power;
typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
aaa-005405
aaa-005406
60
45
30
15
0
20
18
16
14
12
10
60
(1)
η
G
ηη
D
(%)
D
p
(%)
(dB)
(2)
(3)
η
D
50
40
30
20
10
GG
p
0
100
200
300
400
500
600
(W)
700
1150
1200
1250
1300
1350
1400
1450
P
f (MHz)
L
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; PL = 500 W; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 5. Drain efficiency as a function of output power;
typical values
Fig 6. Power gain and drain efficiency as function of
frequency; typical values
aaa-005407
25
RL
in
(dB)
20
15
10
5
0
1150
1200
1250
1300
1350
1400
1450
f (MHz)
VDS = 50 V; PL = 500 W; IDq = 150 mA.
Fig 7. Input return loss as a function of frequency; typical value
BLL8H1214L-500_1214LS-500#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
6 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.2 Performance curves measured with = 10 %, tp = 300 s and Th = 65 C
aaa-005408
aaa-005409
800
20
P
G
p
(dB)
L
(W)
(1)
(2)
(1))
(2))
(3))
(3)
600
17.5
15
400
200
0
12.5
10
0
5
10
15
20
P (W)
25
0
100
200
300
400
500
600
(W)
700
P
i
L
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 8. Output power as a function of input power;
typical values
Fig 9. Power gain as a function of output power;
typical values
aaa-005410
aaa-005411
60
20
18
16
14
12
10
60
50
40
30
20
10
η
G
ηη
D
(%)
D
p
(%)
(dB)
(1)
50
40
30
20
10
0
η
D
(2)
(3)
G
p
0
100
200
300
400
500
600
(W)
700
1150
1200
1250
1300
1350
1400
1450
P
f (MHz)
L
VDS = 50 V; IDq = 100 mA.
VDS = 50 V; PL = 500 W; IDq = 100 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 10. Drain efficiency as a function of output power;
typical values
Fig 11. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
7 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.3 Performance curves measured with = 10 %, tp = 300 s and f = 1300 MHz
001aal688
001aal689
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
18
(1)
(2)
(3)
16
14
12
10
(1)
(2)
(3)
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 12. Output power as a function of input power;
typical values
Fig 13. Power gain as a function of output power;
typical values
001aal690
60
(1)
(2)
η
D
(%)
(3)
40
20
0
0
100
200
300
400
500
600
(W)
700
P
L
VDS = 50 V;IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 14. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
8 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.4 Performance curves measured with = 20 %, tp = 500 s and Th = 25 C
001aal691
001aal692
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
16
(1)
(2)
(3)
(1)
(2)
(3)
12
8
4
0
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 15. Output power as a function of input power;
typical values
Fig 16. Power gain as a function of output power;
typical values
001aal693
001aal694
60
20
55
G
(dB)
η
D
(%)
p
(1)
η
D
η
D
(%)
18
45
(2)
(3)
G
p
40
16
14
12
10
35
25
15
5
20
0
0
100
200
300
400
500
600
(W)
700
1.15
1.25
1.35
1.45
P
f (GHz)
L
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
VDS = 50 V; IDq = 150 mA.
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 17. Drain efficiency as a function of output power;
typical values
Fig 18. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
9 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.5 Performance curves measured with = 20 %, tp = 500 s and Th = 65 C
001aal695
001aal696
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
18
(1)
(2)
(3)
16
14
12
10
(1)
(2)
(3)
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 19. Output power as a function of input power;
typical values
Fig 20. Power gain as a function of output power;
typical values
001aal697
001aal698
60
20
55
G
(dB)
η
D
(%)
p
η
D
(%)
η
D
18
45
(1)
40
G
p
16
14
12
10
35
25
15
5
(3)
(2)
20
0
0
100
200
300
400
500
600
(W)
700
1.15
1.25
1.35
1.45
P
f (GHz)
L
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 21. Drain efficiency as a function of output power;
typical values
Fig 22. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
10 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.6 Performance curves measured with = 20 %, tp = 500 s and f = 1300 MHz
001aal699
001aal700
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
16
(1)
(2)
(3)
(1)
(2)
(3)
12
8
4
0
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 23. Output power as a function of input power;
typical values
Fig 24. Power gain as a function of output power;
typical values
001aal701
60
(1)
(2)
η
D
(%)
40
(3)
20
0
0
100
200
300
400
500
600
(W)
700
P
L
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 25. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
11 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.7 Performance curves measured with = 10 %, tp = 1 ms and Th = 25 C
001aal702
001aal703
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
16
(1)
(2)
(3)
(1)
(2)
(3)
12
8
4
0
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 26. Output power as a function of input power;
typical values
Fig 27. Power gain as a function of output power;
typical values
001aal704
001aal705
60
20
55
(1)
G
(dB)
η
D
(%)
p
η
D
η
D
(%)
(2)
18
45
(3)
G
p
40
16
14
12
10
35
25
15
5
20
0
0
100
200
300
400
500
600
(W)
700
1.15
1.25
1.35
1.45
P
f (GHz)
L
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
VDS = 50 V; IDq = 150 mA.
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 28. Drain efficiency as a function of output power;
typical values
Fig 29. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
12 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.8 Performance curves measured with = 10 %, tp = 1 ms and Th = 65 C
001aal706
001aal707
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
16
(1)
(2)
(3)
(1)
(2)
(3)
12
8
4
0
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 30. Output power as a function of input power;
typical values
Fig 31. Power gain as a function of output power;
typical values
001aal708
001aal709
60
20
55
G
(dB)
η
D
(%)
p
η
η
D
D
(%)
(1)
18
45
(2)
40
G
p
16
14
12
10
35
25
15
5
(3)
20
0
0
100
200
300
400
500
600
(W)
700
1.15
1.25
1.35
1.45
P
f (GHz)
L
VDS = 50 V; IDq = 150 mA.
(1) f = 1200 MHz
VDS = 50 V; IDq = 150 mA.
(2) f = 1300 MHz
(3) f = 1400 MHz
Fig 32. Drain efficiency as a function of output power;
typical values
Fig 33. Power gain and drain efficiency as function of
frequency; typical values
BLL8H1214L-500_1214LS-500#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
13 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
7.4.9 Performance curves measured with = 10 %, tp = 1 ms and f = 1300 MHz
001aal710
001aal711
700
600
500
400
300
200
100
0
20
P
L
G
p
(dB)
(W)
16
(1)
(2)
(3)
(1)
(2)
(3)
12
8
4
0
0
5
10
15
20
25
0
100
200
300
400
500
600
P (W)
L
700
P (W)
i
VDS = 50 V; IDq = 150 mA.
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 34. Output power as a function of input power;
typical values
Fig 35. Power gain as a function of output power;
typical values
001aal712
60
(1)
(2)
η
D
(%)
(3)
40
20
0
0
100
200
300
400
500
600
(W)
700
P
L
VDS = 50 V; IDq = 150 mA.
(1) Th = 40 C
(2) Th = +25 C
(3) Th = +65 C
Fig 36. Drain efficiency as a function of output power; typical values
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
14 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
8. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT539A
D
A
F
D
U
1
B
1
q
C
w
H
M
M
C
2
1
c
1
3
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
A
w
b
M
3
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT
1
1
1
1
2
1
2
11.81
11.56
4.7
4.2
31.55 31.52
30.94 30.96
9.50 9.53
17.12
3.48 3.30 2.26
25.53
0.18
0.10
1.75
41.28 10.29
41.02 10.03
35.56
1.400
0.25 0.51 0.25
0.010 0.020 0.010
13.72
mm
3.05 2.01
9.30 9.27 1.50 16.10 25.27 2.97
0.465
0.455
0.185
0.165
1.242 1.241
1.218 1.219
0.374 0.375 0.069 0.674
0.366 0.365 0.059 0.634 0.995 0.117
0.137 0.130 0.089
0.405
0.007
0.004
1.005
1.625
inches
Note
0.540
0.120 0.079
1.615 0.395
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
10-02-02
12-05-02
SOT539A
Fig 37. Package outline SOT539A
BLL8H1214L-500_1214LS-500#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
15 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
U
2
E
H
1
L
3
4
b
w
3
Q
e
0
5
10 mm
scale
Dimensions
(1)
Unit
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5
nom
9.53
1.75 17.12 25.53 3.48 2.26 32.39 10.29
mm
13.72
0.54
0.25 0.25
0.01 0.01
min 4.2 11.56 0.10 30.94 30.96 9.3
9.27
1.50 16.10 25.27 2.97 2.01 32.13 10.03
0.069 0.674 1.005 0.137 0.089 1.275 0.405
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
nom
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
inches
Note
0.059 0.634 0.995 0.117 0.079 1.265 0.395
1. millimeter dimensions are derived from the original inch dimensions.
sot539b_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
12-05-02
13-05-24
SOT539B
Fig 38. Package outline SOT539B
BLL8H1214L-500_1214LS-500#3
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
16 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
ESD
Description
ElectroStatic Discharge
L-band
LDMOS
MTF
Long wave Band
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
Product data sheet
Change notice Supersedes
BLL8H1214L-500_1214LS-500 #3 20150901
-
BLL8H1214L-500_1214LS-500
#2
Modifications:
• The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLL8H1214L-500_1214LS-500 #2 20150209
Product data sheet
-
BLL8H1214L-500_1214LS-500
#1
BLL8H1214L-500_1214LS-500 #1 20140930
Objective data sheet -
-
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
17 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
18 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLL8H1214L-500_1214LS-500#3
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Product data sheet
Rev. 3 — 1 September 2015
19 of 20
BLL8H1214L(S)-500
LDMOS L-band radar power transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance graphs . . . . . . . . . . . . . . . . . . 5
Performance curves measured with = 10 %,
tp = 300 s and Th = 25 °C . . . . . . . . . . . . . . . . 5
Performance curves measured with = 10 %,
tp = 300 s and Th = 65 °C . . . . . . . . . . . . . . . . 7
Performance curves measured with = 10 %,
tp = 300 s and f = 1300 MHz. . . . . . . . . . . . . . 8
Performance curves measured with = 20 %,
tp = 500 s and Th = 25 °C . . . . . . . . . . . . . . . . 9
Performance curves measured with = 20 %,
tp = 500 s and Th = 65 °C . . . . . . . . . . . . . . . 10
Performance curves measured with = 20 %,
tp = 500 s and f = 1300 MHz. . . . . . . . . . . . . 11
Performance curves measured with = 10 %,
tp = 1 ms and Th = 25 °C. . . . . . . . . . . . . . . . . 12
Performance curves measured with = 10 %,
tp = 1 ms and Th = 65 °C. . . . . . . . . . . . . . . . . 13
Performance curves measured with = 10 %,
tp = 1 ms and f = 1300 MHz . . . . . . . . . . . . . . 14
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
7.4.4
7.4.5
7.4.6
7.4.7
7.4.8
7.4.9
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Handling information. . . . . . . . . . . . . . . . . . . . 17
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLL8H1214L-500_1214LS-500#3
相关型号:
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