BLM8G0710S-45ABGY [ETC]
RF FET LDMOS 65V 35DB SOT12122;
| 型号： | BLM8G0710S-45ABGY |
| 厂家： | 
ETC |
| 描述： | RF FET LDMOS 65V 35DB SOT12122 |
| 文件： | 总21页 (文件大小：1890K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLM8G0710S-45AB;
BLM8G0710S-45ABG
LDMOS 2-stage power MMIC
Rev. 3 — 15 October 2015
Product data sheet
1. Product profile
1.1 General description
The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using
Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly
suited as small cell final stage in Doherty configuration, or as general purpose driver in the
700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.
Table 1.
Performance
Typical RF performance at Tcase = 25 C. Test signal: 3GPP test model 1; 64 DPCH; PAR = 9.9 dB
at 0.01% probability on CCDF; specified in a class-AB production circuit.
[1]
[1]
Test signal
f
IDq1
IDq2
VDS PL(AV) Gp
(V) (W) (dB)
D
ACPR5M
(dBc)
(MHz) (mA)
(mA)
(%)
single carrier W-CDMA
carrier section
957.5 30
957.5 60
120
240
28
28
3
6
34.7
34.7
26
26
41.5
40
peaking section
[1] IDq1 represents driver stage; IDq2 represents final stage.
1.2 Features and benefits
Designed for broadband operation (frequency 700 MHz to 1000 MHz)
High section-to-section isolation enabling multiple combinations
High Doherty efficiency thanks to 2 : 1 asymmetry
Integrated temperature compensated bias
Biasing of individual stages is externally accessible
Integrated ESD protection
Excellent thermal stability
High power gain
On-chip matching for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency
range. Possible circuit topologies are the following as also depicted in Section 8.1:
Asymmetric final stage in Doherty configuration
Asymmetric driver for high power Doherty amplifier
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
2. Pinning information
2.1 Pinning
pin 1 index
V
DS(A1)
1
2
3
4
5
6
7
V
V
GS(A2)
GS(A1)
RF_OUT_A / V
RF_IN_A
n.c.
16
15
DS(A2)
n.c.
n.c.
n.c.
n.c.
8
9
n.c.
RF_IN_B
10
11
12
13
14
RF_OUT_B / V
DS(B2)
V
V
V
GS(B1)
GS(B2)
DS(B1)
aaa-009322
Transparent top view
The exposed backside of the package is the ground terminal of the device.
Fig 1. Pin configuration
2.2 Pin description
Table 2.
Symbol
VDS(A1)
VGS(A2)
VGS(A1)
RF_IN_A
n.c.
Pin description
Pin
1
Description
drain-source voltage of carrier section, driver stage (A1)
gate-source voltage of carrier section, final stage (A2)
gate-source voltage of carrier section, driver stage (A1)
RF input carrier section (A)
2
3
4
5
not connected
n.c.
6
not connected
n.c.
7
not connected
n.c.
8
not connected
n.c.
9
not connected
n.c.
10
11
12
13
14
not connected
RF_IN_B
VGS(B1)
VGS(B2)
VDS(B1)
RF input peaking section (B)
gate-source voltage of peaking section, driver stage (B1)
gate-source voltage of peaking section, final stage (B2)
drain-source voltage of peaking section, driver stage (B1)
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
2 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
Table 2.
Symbol
Pin description …continued
Pin Description
RF_OUT_B/VDS(B2) 15
RF_OUT_A/VDS(A2) 16
RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)
RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)
GND
flange RF ground
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLM8G0710S-45AB
BLM8G0710S-45ABG
HSOP16F
HSOP16
plastic, heatsink small outline package; 16 leads(flat)
plastic, heatsink small outline package; 16 leads
SOT1211-2
SOT1212-2
4. Block diagram
carrier
V
DS(A1)
RF_IN_A
RF_OUT_A / V
DS(A2)
V
V
TEMPERATURE
COMPENSATED BIAS
GS(A1)
GS(A2)
V
V
TEMPERATURE
COMPENSATED BIAS
GS(B1)
GS(B2)
RF_IN_B
RF_OUT_B / V
DS(B2)
V
DS(B1)
peaking
aaa-016004
Fig 2. Block diagram
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
case temperature
-
65
VGS
0.5
+13
+150
225
150
V
Tstg
65
C
C
C
[1]
Tj
-
-
Tcase
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF calculator.
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
3 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
6. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Carrier section
Conditions
Value Unit
[1]
[1]
Rth(j-c)
thermal resistance from junction to case
final stage; Tcase = 90 C; PL = 1.26 W
driver stage; Tcase = 90 C; PL = 1.26 W
3
K/W
K/W
10.6
Peaking section
[1]
[1]
Rth(j-c)
thermal resistance from junction to case
final stage; Tcase = 90 C; PL = 2.51 W
driver stage; Tcase = 90 C; PL = 2.51 W
1.8
7.3
K/W
K/W
[1] When operated with a CW signal.
7. Characteristics
Table 6.
DC characteristics
Tcase = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Carrier section
Final stage
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 241.3 A
VDS = 28 V; ID = 120 mA
VDS = 28 V; ID = 120 mA
40 C Tcase +85 C
VGS = 0 V; VDS = 28 V
VGS = 5.65 V; VDS = 10 V
VGS = 1.0 V; VDS = 0 V
65
1.5
1.7
-
-
-
V
VGSq
gate-source quiescent voltage
2
2.7
V
[1]
2.65 3.6
V
IDq/T quiescent drain current variation with temperature
0.5
-
%
A
A
IDSS
IDSX
IGSS
drain leakage current
drain cut-off current
gate leakage current
-
-
1.4
-
-
4.2
-
-
140
nA
Driver stage
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 60.3 A
VDS = 28 V; ID = 30 mA
VDS = 28 V; ID = 30 mA
40 C Tcase +85 C
VGS = 0 V; VDS = 28 V
VGS = 5.65 V; VDS = 10 V
VGS = 1.0 V; VDS = 0 V
65
1.5
1.7
-
-
-
V
VGSq
gate-source quiescent voltage
2.1
2.7
V
[2]
2.65 3.6
V
IDq/T quiescent drain current variation with temperature
0.5
-
%
A
A
IDSS
IDSX
IGSS
drain leakage current
drain cut-off current
gate leakage current
-
-
1.4
-
-
1.05
-
-
140
nA
Peaking section
Final stage
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 482.6 A
VDS = 28 V; ID = 240 mA
VDS = 28 V; ID = 240 mA
40 C Tcase +85 C
VGS = 0 V; VDS = 28 V
VGS = 5.65 V; VDS = 10 V
VGS = 1.0 V; VDS = 0 V
65
1.5
1.7
-
-
-
V
VGSq
gate-source quiescent voltage
2
2.7
V
[1]
2.65 3.6
V
IDq/T quiescent drain current variation with temperature
1
-
-
%
A
A
IDSS
IDSX
IGSS
drain leakage current
drain cut-off current
gate leakage current
-
1.4
-
-
8.3
-
-
140
nA
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
4 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
Table 6.
DC characteristics …continued
Tcase = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Driver stage
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 120.6 A
VDS = 28 V; ID = 60 mA
VDS = 28 V; ID = 60 mA
40 C Tcase +85 C
VGS = 0 V; VDS = 28 V
VGS = 5.65 V; VDS = 10 V
VGS = 1.0 V; VDS = 0 V
65
1.5
1.7
-
-
-
V
VGSq
gate-source quiescent voltage
2
2.7
V
[2]
2.65 3.6
V
IDq/T quiescent drain current variation with temperature
1
-
-
%
A
A
IDSS
IDSX
IGSS
drain leakage current
drain cut-off current
gate leakage current
-
1.4
-
-
2.1
-
-
140
nA
[1] In production circuit with 1.3 k gate feed resistor.
[2] In production circuit with 1.2 k gate feed resistor.
Table 7.
RF Characteristics
Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA (carrier section, driver stage); IDq2 = 120 mA (carrier
section, final stage); PL(AV) = 3 W (carrier section); IDq1 = 60 mA (peaking section, driver stage); IDq2 = 240 mA (peaking
section, final stage); PL(AV) = 6 W (peaking section) unless otherwise specified, measured in an Ampleon straight lead
production circuit.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Carrier section
Test signal: single carrier W-CDMA [1]
Gp
power gain
f = 730.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
-
35.3
-
dB
dB
%
33.2 34.7
36.2
D
drain efficiency
input return loss
-
23.4
26
-
21
-
%
RLin
-
19
38.5
10
dB
dBc
ACPR5M adjacent channel power ratio (5 MHz)
-
-
-
41.5 36.5 dBc
PARO
output peak-to-average ratio
-
8.1
8.4
-
-
dB
dB
7.1
Peaking section
Test signal: single carrier W-CDMA [1]
Gp
power gain
f = 730.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
f = 730.5 MHz
f = 957.5 MHz
-
35.6
-
dB
dB
%
33.2 34.7
36.2
D
drain efficiency
input return loss
-
23.4
26
-
21
-
%
RLin
-
17
39.5
40
8
10
dB
dBc
ACPR5M adjacent channel power ratio (5 MHz)
-
-
-
34.5 dBc
PARO
output peak-to-average ratio
-
-
-
dB
dB
6.7
8
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
5 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
Table 7.
RF Characteristics …continued
Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq1 = 30 mA (carrier section, driver stage); IDq2 = 120 mA (carrier
section, final stage); PL(AV) = 3 W (carrier section); IDq1 = 60 mA (peaking section, driver stage); IDq2 = 240 mA (peaking
section, final stage); PL(AV) = 6 W (peaking section) unless otherwise specified, measured in an Ampleon straight lead
production circuit.
Symbol
Parameter
Conditions
Min Typ
Max
Unit
Test signal: CW [2]
s21
s212
phase response difference
insertion power gain difference
normalized; between sections
normalized; between sections
10
-
-
+10
deg
dB
0.5
+0.5
[1] 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF.
[2] f = 957.5 MHz.
8. Application information
Table 8.
Doherty typical performance
Test signal: 1-tone CW; RF performance at Tcase = 25 C; VDS = 28 V; IDq1 = 130 mA (carrier section, final stage); IDq2 = 4 mA
(peaking section, final stage); unless otherwise specified, measured in an Ampleon, f = 925 MHz to 960 MHz, Doherty
application circuit (see Figure 3 and Figure 4).
Symbol Parameter
Conditions
Min Typ
Max Unit
PL(3dB) output power at 3 dB gain compression f = 942.5 MHz; 1-tone pulsed CW
(10 % duty cycle)
-
63.9
-
W
D
drain efficiency
at 9 dB OBO (PL = 8.3 W); f = 942.5 MHz;
1-tone pulsed CW (10 % duty cycle)
-
44.7
-
%
Gp
power gain
PL(AV) = 8.3 W; f = 942.5 MHz
PL(AV) = 4 W; f = 942.5 MHz; 2-tone CW
PL(AV) = 8.3 W
-
-
-
-
28.5
150
0.7
-
-
-
-
dB
Bvideo
Gflat
K
video bandwidth
gain flatness
MHz
dB
[1]
Rollett stability factor
Tcase = 40 C; f = 0.1 GHz to 3 GHz
>1
[1] For carrier and peaking sections (S-parameters measured with load-pull jig).
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
6 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
40 mm
100 pF
10 μF/50 V
1 μF/
50 V
1.3 kΩ
0 Ω
10 μF/50 V
LM7341
1.2 kΩ
10 μF/
35 V
5.6 pF
1.3 kΩ
10 μF/6.3 V
10 μF/
47 pF
6.3 V
0.5 pF
0.5 pF
2 x
100 Ω
40 mm
CMX09Q02
CMX09Q05
18.8 nH
10 μF/
6.3 V
2.2 pF
10 μF/6.3 V
1.2 kΩ
24 pF
10 μF/
35 V
8.2 pF
LM7341
0 Ω
100 pF 100 pF
1.3 kΩ
1 μF/
50 V
3.3 kΩ
10 μF/50 V
10 μF/50 V
aaa-018787
Fig 3. Component layout
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
7 of 21
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10 μF
BLM8G0710S-45ABG
50 V
Doherty compact board
schematics 925-960 MHz
V
Carrier
D
28 V
100 pF
ATC600F
1.3 kΩ
1 μF
25 V
10 μF
50 V
BLM8G0710S-30PB PathA
V
DS
28 V
V
V
V
1
2
3
4
DS(A1)
GS(A2)
GS(A1)
10 μF
35 V
1.3 kΩ
V
carrier
RF out
G
3
4
5
1
5.6 pF
ATC600F
1.2 kΩ
2
LM7341
10 μF
35 V
Driver
clamped
RF sense FET
Final
clamped
RF sense FET
RF_IN_A
n.c.
5
6
7
47 pF
ATC600F
n.c.
16
2
3
4
100 Ω
n.c.
2
3
0.5 pF
Driver
RF power FET
Final
RF power FET
100 Ω
ATC600F
CMX09Q05
CMX09Q05
0.5 pF
Driver
RF power FET
Final
RF power FET
1
1
4
n.c.
n.c.
ATC600F
8
9
24 pF
ATC600F
18.8 nH murata
LQW2BHN21K
15
2.2 pF
ATC600F
RF in
n.c.
10
11
RF_IN_B
8.2 pF
ATC600F
Driver
clamped
Final
clamped
10 μF
RF sense FET
RF sense FET
6.3 V
1.2 kΩ
1.3 kΩ
V
12
13
14
DS(B2)
2 x 100 pF
ATC600F
V
GS(B2)
10 μF
6.3 V
V
peaking
G
V
DS(B1)
3
4
2
5
1
10 μF
50 V
BLM8G0710S-30PB PathB
LM7341
10 μF
35 V
1 μF
25 V
1.3 kΩ
V
peaking
D
28 V
aaa-018788
Fig 4. Electrical schematic
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
8.1 Possible circuit topologies
-3 dB / Φ-0°
In A
Out A
-3 dB / Φ-0°
In B
Out B
aaa-016006
Fig 5. Dual section
Splitter
Combiner
In
-3 dB / Φ-0°
λ/4
λ/4
-3 dB / Φ-90°
Out
aaa-009325
Fig 6. Doherty
8.2 Ruggedness in class-AB operation
The BLM8G0710S-45AB and BLM8G0710S-45ABG are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: f = 840 MHz; VDS = 32 V; IDq1 = 40 mA (carrier section, driver stage);
I
I
Dq2 = 120 mA (carrier section, final stage); IDq1 = 60 mA (peaking section, driver stage);
Dq2 = 240 mA (peaking section, final stage); Pi = 13 dBm (carrier section);
Pi = 14 dBm (peaking section). Pi is measured at CW and corresponding to PL(3dB) under
ZS = 50 load.
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
9 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
8.3 Impedance information
Table 9.
Typical impedance
Measured load-pull data at 3 dB gain compression point; test signal: pulsed CW; Tcase = 25 C; VDS = 28 V; tp = 100 s;
= 10 %; ZS = 50 ; IDq1 = 30 mA (carrier section, driver stage); IDq2 = 120 mA (carrier section, final stage);
IDq1 = 60 mA (peaking section, driver stage); IDq2 = 240 mA (peaking section, final stage). Typical values unless otherwise
specified.
tuned for maximum output power
tuned for maximum power added efficiency
f
ZL
Gp(max) PL
add
AM-PM
ZL
Gp(max) PL
add
AM-PM
conversion
conversion
(MHz)
()
(dB)
(W)
(%)
(deg)
()
(dB)
(W)
(%)
(deg)
Carrier section
BLM8G0710S-45AB
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
6.2 + j3.6
6.2 + j3.7
6.3 + j3.6
6.3 + j3.5
6.2 + j3.5
6.2 + j2.8
6.3 + j2.9
6.8 + j2.2
7.4 + j1.7
7.4 + j1.7
7.2 + j0.9
7.3 + j0.9
8.1 + j0.7
7.2 + j0.9
8.0 + j0.8
33.9
34
44.8
44.8
44.8
44.8
44.8
44.9
44.8
44.9
44.8
44.8
44.8
44.7
44.7
44.6
44.7
56.4
56.8
57.2
57.4
57.7
56.3
56.8
56.5
56.2
56.2
54.3
54.2
55.2
53.4
55.1
8.5
8
9.2 + j8.5
8.8 + j9.6
8.5 + j8.7
9.4 + j8.4
8.4 + j8.5
9.2 + j8.5
8.7 + j6.8
7.9 + j6.9
7.9 + j6.8
7.8 + j6.8
7.8 + j6.8
8.1 + j7.8
8.3 + j5.9
8.7 + j6.7
8.6 + j6.8
35.5
35.7
35.4
35.3
35.1
35.1
34.6
34.6
34.5
34.5
34.6
34.8
34.6
34.8
34.8
43.5
43
67.3
67
10.7
11
33.9
33.8
33.6
33.4
33.3
33.1
33.1
33.1
32.9
32.9
33.2
33.2
33.4
7.2
6.1
6.2
5
43.3
43.3
43.2
43.2
43.7
43.7
43.7
43.6
43.5
43.1
43.7
43.3
43.3
66.7
66.7
66.1
65.4
65.1
65.1
64.5
64
9.7
7.3
8.2
6.1
6.3
6.2
6.2
5.3
5.2
3.9
2.8
1.9
1.5
5.7
4.1
4
3.3
3.4
2.7
2
63.8
63.1
62.4
61.8
62.1
2.4
2
BLM8G0710S-45ABG
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
6.4 + j3.1
6.3 + j3.4
6.5 + j2.6
7.4 + j1.8
6.5 + j1.6
7.1 + j1.3
6.4 + j1.2
7.0 + j0.8
7.5 + j0.5
7.4 + j0.7
8.2 + j0.3
7.4 + j0.1
8.0 + j0.1
7.9 j0.6
7.7 j0.5
34.4
34.6
34.4
34.2
33.6
33.6
33.3
33.3
33.3
33.4
33.6
33.4
33.5
33.5
33.7
44.4
44.4
44.5
44.5
44.5
44.7
44.7
44.7
44.6
44.5
44.4
44.5
44.4
44.3
44.4
55.3
56.6
55.5
55.9
53.1
55.7
54.2
55
8.8
8.3
7.6
6
8.5 + j8.5
8.9 + j8.8
8.3 + j8.2
8.8 + j8.7
7.3 + j8.1
7.1 + j8.0
8.3 + j8.2
8.1 + j8.1
8.4 + j7.1
8.2 + j7.4
8.0 + j7.2
7.3 + j6.3
6.8 + j6.5
7.0 + j6.9
7.1 + j6.3
36.1
36.1
36
42.9
42.8
42.9
42.6
42.7
42.8
42.6
42.5
42.9
42.7
42.6
42.9
42.6
42.4
42.6
65.8
66.8
65.4
65.1
64.2
64.9
64
12.7
11
10.9
9.2
10.2
9.7
6.9
7
35.9
35.5
35.5
35.3
35.3
35.1
35.3
35.4
35.3
35.4
35.8
35.5
5.5
4.8
4.8
4.7
4.4
4.3
2.9
2.8
2.4
2
63.5
63.4
62.3
62.1
61.8
60.9
60.5
61.3
54.7
54.6
54.8
53.8
53.9
52.4
53
6
6
4.9
5.4
5.7
4.2
3
1.6
BLM8G0710S-45AB_S-45ABG
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Product data sheet
Rev. 3 — 15 October 2015
10 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
Table 9.
Typical impedance …continued
Measured load-pull data at 3 dB gain compression point; test signal: pulsed CW; Tcase = 25 C; VDS = 28 V; tp = 100 s;
= 10 %; ZS = 50 ; IDq1 = 30 mA (carrier section, driver stage); IDq2 = 120 mA (carrier section, final stage);
I
Dq1 = 60 mA (peaking section, driver stage); IDq2 = 240 mA (peaking section, final stage). Typical values unless otherwise
specified.
tuned for maximum output power
tuned for maximum power added efficiency
f
ZL
Gp(max) PL
add
AM-PM
ZL
Gp(max) PL
add
AM-PM
conversion
conversion
(MHz)
()
(dB)
(W)
(%)
(deg)
()
(dB)
(W)
(%)
(deg)
Peaking section
BLM8G0710S-45AB
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
3.0 + j2.1
3.0 + j1.7
3.0 + j1.7
3.0 + j1.3
3.3 + j1.3
3.2 + j0.9
3.3 + j1.0
3.4 + j0.5
3.5 + j0.5
3.4 + j0.4
3.4 + j0.3
3.4 + j0.4
3.5 + j0.0
3.5 j0.1
3.5 j0.1
36.1
35.9
35.8
35.4
35.3
35.2
35
47.2
47.3
47.4
47.4
47.5
47.5
47.5
47.5
47.5
47.4
47.4
47.4
47.3
47.3
47.3
55.1
53.4
54.8
53.5
55
2.4
2.5
3
4.2 + j5.2
4.4 + j5.0
4.2 + j4.5
4.1 + j4.8
4.0 + j4.4
3.9 + j4.2
4.1 + j3.8
3.8 + j4.0
3.8 + j3.8
4.0 + j3.5
3.7 + j3.6
3.8 + j3.7
3.5 + j3.2
3.5 + j3.1
3.4 + j2.8
37.6
37.8
37.5
37.2
37
45.3
45.4
45.7
45.4
45.7
45.8
46
65.7
64.6
64.7
64.3
63.7
64
1.5
1
0.2
0.9
1.3
1
3
2.4
3.1
2.4
2.3
2.1
1.8
2.1
1.4
1.1
1.3
0.4
53.8
54.9
53.2
53.8
53.2
53.4
54.4
52.9
52.7
53.9
37
36.7
36.8
36.7
36.7
36.8
36.8
36.6
36.4
36.2
63.6
63.4
63.1
63.1
63
0.1
1.3
1.2
0.3
0.9
0.5
0.5
0.3
1
34.8
34.7
34.8
34.7
34.7
34.5
34.2
34.2
45.7
45.7
45.9
45.7
45.5
45.7
45.7
45.8
63
62.3
62
62.2
BLM8G0710S-45ABG
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
3.0 + j0.6
3.0 + j0.6
2.9 + j0.3
3.0 + j0.2
3.3 j0.1
3.3 j0.5
3.3 j0.5
3.3 j0.5
3.5 j0.9
3.4 j1.0
3.4 j1.2
3.4 j1.1
3.5 j1.4
3.5 j1.6
3.2 j1.6
36.3
36.4
35.9
35.6
35.5
35.4
35.8
35.5
34.5
34.7
34.8
35
47.5
47.5
47.6
47.7
47.7
47.7
47.7
47.6
47.7
47.6
47.6
47.6
47.5
47.5
47.5
55.1
55.6
54.6
56
0.3
0.6
1.9
0.6
0.9
0.8
1.3
1.3
0.6
0.1
0
4.5 + j3.6
4.4 + j3.1
4.1 + j3.4
4.4 + j2.8
4.3 + j2.9
3.9 + j2.6
4.1 + j2.3
4.1 + j2.1
3.8 + j2.0
3.6 + j2.0
3.7 + j1.8
3.7 + j1.8
3.8 + j1.6
3.5 + j1.3
3.5 + j1.0
37.7
37.7
37.3
37
45.8
46.1
45.8
46.1
46
66.1
65.7
65.4
65.1
64.7
64.4
64
3.2
2.2
2
2.2
2.9
3.2
1.8
1.3
2.5
3.2
2.7
1.9
1.2
2.2
2.5
55.9
54.4
55.2
55.4
54.9
54.2
54.2
55.4
54.7
54.9
54.6
37
37
46.1
46.2
46.3
46.3
46.1
46.1
45.9
46
37.3
36.6
35.9
36.4
36.5
36.6
36.4
36.1
35.7
63.7
63.7
63.1
63.3
63.2
62.8
62.8
63.1
0.4
0.3
0.4
2.1
34.7
34.4
33.9
46
46.2
BLM8G0710S-45AB_S-45ABG
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Product data sheet
Rev. 3 — 15 October 2015
11 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
8.4 Graphs
aaa-018002
aaa-018003
30
28
26
24
22
0
30
28
26
24
22
0
G
RL
G
RL
in
(dB)
p
in
p
G
p
(dB)
(dB)
(dB)
G
p
-10
-20
-30
-40
-10
-20
-30
-40
RL
in
RL
in
700
800
900
1000
1100
1200
900 910 920 930 940 950 960 970 980
f (MHz)
f (MHz)
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier
section); IDq = 4 mA (peaking section); PL = 1.25 W.
section); IDq = 4 mA (peaking section); PL = 1.25 W.
(1) magnitude of Gp
(2) magnitude of RLin
(1) magnitude of Gp
(2) magnitude of RLin
Fig 7. Wideband power gain and input return loss as
function of frequency; typical values
Fig 8. In-band power gain and input return loss as
function of frequency; typical values
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
12 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
aaa-018004
aaa-018005
4
30
28
26
24
22
80
60
40
20
0
φ /φ
(deg)
G
ηη
D
(%)
s21 s21(norm)
p
(dB)
0
-4
G
p
(3)
((11))))
((22))))
((33))))
(2)
-8
(1)
-12
-16
η
D
-20
20
25
30
35
40
45
(dBm)
50
25
30
35
40
45
50
P
P
L
(dBm)
L
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier
section); IDq = 4 mA (peaking section).
section); IDq = 4 mA (peaking section); 1-tone pulsed
CW ( = 10 %).
(1) f = 925 MHz
(1) f = 925 MHz
(2) f = 942.5 MHz
(3) f = 960 MHz
(2) f = 942.5 MHz
(3) f = 960 MHz
Fig 9. Normalized phase response as a function of
output power; typical values
Fig 10. Power gain and drain efficiency as function of
output power; typical values
aaa-018006
-10
IMDD
(dBc)
(1))
(2))
IMDD33
-30
IMDD55
(1))
(2))
IMDD77
-50
(1))
(2))
-70
-90
2
3
1
10
10
10
tone spacing (MHz)
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier section); IDq = 4 mA (peaking section); f = 942.5 MHz.
(1) IMD low
(2) IMD high
Fig 11. Intermodulation distortion as a function of tone spacing; typical values
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
13 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
aaa-018007
-20
ACPR
(dBc)
50
ηη
D
(%)
ACPR
5M
-30
40
30
20
10
0
η
D
-40
-50
-60
-70
ACPR
10MM
28
30
32
34
36
38
40
42
P
(dBm)
L
Tcase = 25 C; VDS = 28 V; IDq = 130 mA (carrier section); IDq = 4 mA (peaking section): f = 942.5 MHz; single carrier W-CDMA;
test model 1; PAR = 9.9 dB at 0.01 % probability on CCDF.
Fig 12. Adjacent channel power ratio and drain efficiency as function of output power; typical values
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
14 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
9. Package outline
HSOP16F: plastic, heatsink small outline package; 16 leads(flat)
SOT1211-2
D
E
X
c
D
3
E
B
A
3
y
H
v
A
E
D
D
1
2
1
e
b (2x)
1
w
B
16
15
(8x) METAL
PROTRUSIONS (SOURCE)
F(16x)
e
(2x)
6
e
(2x)
5
A
A
2
E
E
2
1
Q
1
pin 1
index
A
1
detail X
1
14
b(14x)
e
2
w
B
e
(12x)
e
3
(2x)
H
Q
1
v
w
y
E
e
4
(2x)
16.16 1.62
15.96 1.57 0.25 0.25
15.76 1.52
0.1
0
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
(1)
D
(1)
A
A
A
b
b
c
D
1
D
2
D
3
E
E
E
E
e
e
e
e
3
e
e
e
6
F
1
2
1
1
2
3
1
2
4
5
max 3.9 0.2 3.65 0.40 5.55 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83
nom
min
0.1 3.60 0.35 5.50 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78
8.45 9.55
2.97 4.07 0.2
mm
1.0 7.45 1.5
0
3.55 0.30 5.45 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73
Note
1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimensions “b and “ b do not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
1
sot1211-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
15-01-12
15-06-09
SOT1211-2
Fig 13. Package outline SOT1211-2 (HSOP16F)
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
15 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
HSOP16: plastic, heatsink small outline package; 16 leads
SOT1212-2
X
D
E
c
B
D
3
A
E
3
y
v
A
H
E
D
1
D
2
e
1
b (2x)
1
w
B
(8x) METAL
PROTRUSIONS (SOURCE)
16
15
e
(2x)
6
e
(2x)
5
Q
E
E
1
A
A
2
2
(A )
3
A
A
1
pin 1 index
4
θ
H
L
p
1
14
detail X
b
e
e
w
B
2
(14x)
(12x)
e
e
(2x)
3
(2x)
4
H
E
L
Q
v
w
y
θ
p
°
°
°
13.5 1.10 2.07
13.2 0.95 2.02 0.25
12.9 0.80 1.97
0.1
7
3
0
0
10 mm
0.25
scale
Dimensions (mm are the original dimensions)
(1)
(1)
E
Unit
A
A
A
A
A
b
b
1
c
D
D
1
D
2
D
3
E
E
E
e
e
e
e
e
e
e
1
2
3
4
1
2
3
1
2
3
4
5
6
max 3.9 0.2 3.65
0.06 0.40 5.55 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83
0.35 5.50 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 1.0 7.45 1.5 8.45 9.55 2.97 4.07
-0.02 0.30 5.45 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73
nom
min
mm
0.1 3.60 0.35
3.55
0
0
Note
1. Package body dimensions “D'' and `'E'' do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimensions `'b'' and `'b '' do not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
1
3. Dimension A is measured with respect to bottom of the heatsink DATUM H. Positive value means that the bottom of the heatsink is
4
higher than the bottom of the lead.
sot1212-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
15-01-14
15-06-09
SOT1212-2
Fig 14. Package outline SOT1212-2 (HSOP16)
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
16 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
10. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
11. Abbreviations
Table 10. Abbreviations
Acronym
AM
Description
Amplitude Modulation
3GPP
CCDF
CW
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
DPCH
ESD
Dedicated Physical CHannel
ElectroStatic Discharge
GEN8
LDMOS
MMIC
MTF
Eighth Generation
Laterally Diffused Metal Oxide Semiconductor
Monolithic Microwave Integrated Circuit
Median Time to Failure
OBO
Output Back Off
PAR
Peak-to-Average Ratio
PM
Phase Modulation
VSWR
W-CDMA
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
17 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
12. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
20151015 Product data sheet
Change notice Supersedes
- BLM8G0710S-45AB_
BLM8G0710S-45AB_S-45ABG v.3
S-45ABG#2
Modifications:
• Table 1 on page 1: table updated
• Table 5 on page 4: table updated
• Table 6 on page 4: table updated
• Table 7 on page 5: table updated
• Table 8 on page 6: table updated
• Section 8.2 on page 9: section updated
• Table 9 on page 10: table updated
• Figure 10 on page 13: figure updated
• Figure 11 on page 13: notes updated
• Figure 12 on page 14: notes updated
BLM8G0710S-45AB_S-45ABG#2
Modifications:
20150901
Objective data sheet
-
BLM8G0710S-45AB_
S-45ABG v.1
• The format of this document has been redesigned to comply with the new
identity guidelines of Ampleon
• Legal texts have been adapted to the new company name where appropriate
BLM8G0710S-45AB_S-45ABG v.1
20150820
Objective data sheet
-
-
BLM8G0710S-45AB_S-45ABG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
18 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
13.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
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LDMOS 2-stage power MMIC
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
14. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLM8G0710S-45AB_S-45ABG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 3 — 15 October 2015
20 of 21
BLM8G0710S-45AB(G)
LDMOS 2-stage power MMIC
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
2.1
2.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3
4
5
6
7
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Application information. . . . . . . . . . . . . . . . . . . 6
Possible circuit topologies . . . . . . . . . . . . . . . . 9
Ruggedness in class-AB operation . . . . . . . . . 9
Impedance information . . . . . . . . . . . . . . . . . . 10
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.1
8.2
8.3
8.4
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Handling information. . . . . . . . . . . . . . . . . . . . 17
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 18
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2016.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 15 October 2015
Document identifier: BLM8G0710S-45AB_S-45ABG
相关型号：
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