BLS2933-100,112 [ETC]
RF FET LDMOS 65V 8DB SOT502A;型号: | BLS2933-100,112 |
厂家: | ETC |
描述: | RF FET LDMOS 65V 8DB SOT502A |
文件: | 总13页 (文件大小:1105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BLS2933-100
Microwave power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar
applications in the 2.9 GHz to 3.3 GHz frequency range.
Table 1:
Typical performance
tp = 200 s; = 12 %; Tcase = 25 C; in a class-AB production test circuit.
Mode of operation
f
VDS
(V)
32
PL
Gp
(dB)
8
D
IDq
(GHz)
(W)
100
(%)
40
(mA)
20
class AB
2.9 to 3.3
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Easy power control
Integrated ESD protection
Excellent ruggedness
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
1.3 Applications
S-band radar applications
BLS2933-100
Microwave power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Symbol
1
3
1
3
2
2
gate
[1]
3
source
2
sym112
[1] connected to flange
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLS2933-100
flanged LDMOST ceramic package; 2 mounting
holes; 2 leads
SOT502A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Max
65
Unit
V
drain-source voltage
gate-source voltage
drain current
-
-
15
V
-
12
A
Tstg
Tj
storage temperature
junction temperature
65
150
200
C
C
-
5. Thermal characteristics
Table 5.
Symbol
Zth(j-h)
Thermal characteristics
Parameter
transient thermal impedance from Th = 25 C;
Conditions
Typ
0.4
Unit
K/W
junction to heatsink
tp = 200 s; = 12 %
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 13
BLS2933-100
Microwave power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 2.1 mA 65
-
-
V
V
V
VGS(th)
gate-source threshold voltage VDS = 10 V;
2.5
3.1
3.3
3.5
4.5
ID = 180 mA
VGSq
gate-source quiescent voltage VDS = 28 V;
DS = 900 mA
-
I
IDSS
IDSX
drain leakage current
drain cut-off current
VGS = 0 V; VDS = 28 V
-
-
2
-
A
VGS = VGS(th) + 9 V;
VDS = 10 V
27
30
A
IGSS
gfs
gate leakage current
VGS = 15 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
-
200
nA
S
forward transconductance
9.0
0.09
-
-
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 6 V;
ID = 6 A
Crs
feedback capacitance
VGS = 0 V; VDS = 28 V;
f = 1 MHz
-
2.5
-
pF
7. Application information
Table 7.
Application information
RF performance in common source class-AB circuit; Th = 25 C; tp = 200 s; = 12 %;
Zth(mb-h) = 0.15 K/W; unless otherwise specified.
Symbol
foper
VCC
tp
Parameter
Conditions Min
Typ
-
Max Unit
operating frequency
supply voltage
pulse duration
duty cycle
2.9
3.3
GHz
V
-
-
32
-
-
200
12
-
s
%
-
-
PL
output power
100
-
-
W
PL(1dB)
output power at 1 dB gain
compression
120
-
W
Gp
power gain
6
33
-
8
-
dB
%
D
drain efficiency
40
0.1
20
6
-
Pdroop(pulse) pulse droop power
0.5
50
50
-
dB
ns
ns
tr
rise time
-
tf
fall time
-
VSWRload
IRL
load voltage standing wave ratio
input return loss
10 : 1
-
-
10
-
dB
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 13
BLS2933-100
Microwave power LDMOS transistor
Table 8.
f
Typical impedance
ZS
ZL
GHz
2.9
3.3 j5.6
3.7 j5.3
5.9 j5.8
6.8 j3.4
6.6 j2.7
3.5 j3.3
3.1 j3.6
3.3 j3.3
3.2 j3.5
3.1 j3.6
3.0
3.1
3.2
3.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.1 Ruggedness in class-AB operation
The BLS2933-100 is capable of withstanding a load mismatch corresponding to
VSWR > 10 : 1 through all phases under the following conditions: VDS = 32 V;
I
Dq = 20 mA; PL = 100 W pulsed, tp = 200 s; = 12 %.
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 13
BLS2933-100
Microwave power LDMOS transistor
001aaf066
001aaf070
10
50
10
G
(dB)
η
G
p
(dB)
p
D
(%)
(1)
(2)
(3)
η
D
8
6
4
2
0
40
8
6
4
2
0
G
(4)
(5)
p
30
20
10
0
2.8
3.0
3.2
3.4
0
40
80
120
160
f (GHz)
P (W)
L
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %;
PL = 100 W.
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
Fig 2. Power gain and drain efficiency as functions of
frequency; typical values
Fig 3. Power gain as a function of load power; typical
values
001aaf071
001aaf072
50
160
(1)
η
D
(%)
(2)
P
(W)
L
(3)
(1) (2) (3)
(4)
(5)
40
30
20
10
0
(4)
(5)
120
80
40
0
0
40
80
120
160
0
10
20
30
P
L
(W)
P (W)
i
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
(1) f = 2.9 MHz.
(2) f = 3.0 MHz.
(3) f = 3.1 MHz.
(4) f = 3.2 MHz.
(5) f = 3.3 MHz.
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %.
Fig 4. Efficiency as a function of power load; typical
values
Fig 5. Load power as a function of input power;
typical values
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 13
BLS2933-100
Microwave power LDMOS transistor
001aaf073
001aaf074
12
10
G
p
(dB)
G
p
(dB)
(1)
(2)
(3)
10
8
6
4
(3)
(2)
(1)
8
6
2.8
3.0
3.2
3.4
2.8
3.0
3.2
3.4
f (GHz)
f (GHz)
(1) IDq = 20 mA.
(2) Dq = 150 mA.
(3) IDq = 500 mA.
(1) tp = 100 s.
(2) tp = 300 s.
(3) tp = 500 s.
I
VDS = 32 V; IDq = 20 mA; tp = 200 s; = 12 %;
PL = 100 W.
VDS = 32 V; IDq = 20 mA; tp = 100 s, 200 s and
500 s; = 10 %; PL = 100 W.
Fig 6. Power gain as a function of frequency and IDq
typical values
;
Fig 7. Power gain as a function of frequency; typical
values
001aaf081
50
η
D
(%)
45
(1)
(2)
(3)
40
35
2.8
3.0
3.2
3.4
f (GHz)
(1) tp = 100 s.
(2) tp = 300 s.
(3) tp = 500 s.
VDS = 32 V; IDq = 20 mA; = 10 %; PL = 100 W.
Fig 8. Efficiency as a function of frequency; typical values
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
6 of 13
BLS2933-100
Microwave power LDMOS transistor
001aaf082
1.0
Z
th
(K/W)
0.8
0.6
0.4
0.2
0
(1)
(2)
(3)
(4)
(5)
−5
−4
−3
−2
10
10
10
10
t
p
(s)
(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 5 % duty cycle
(4) 10 % duty cycle
(5) 20 % duty cycle
Fig 9. Thermal resistance as function of pulse duration and duty cycle; typical values
001aaf083
800
P
max
(W)
(1)
(2)
(3)
(4)
600
400
200
0
−5
−4
−3
−2
10
10
10
10
t
p
(s)
Th = 70 C
(1) 1 % duty cycle
(2) 2 % duty cycle
(3) 10 % duty cycle
(4) 20 % duty cycle
Fig 10. Maximum allowable dissipated power as function of pulse duration and duty cycle for reaching 200 C
junction temperature
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
7 of 13
BLS2933-100
Microwave power LDMOS transistor
8. Test information
C3
C2
C4 C5
C6 C7
+Vgs
+Vds
C8 C9
R1
C12
C11
R2
L1
C1
C10
BLS2933-100 in
BLS2933-100 out
001aaf084
The components are situated on one side of the copper-clad Duroid 6006 Printed-Circuit Board (PCB). Both the input and
output PCB are 40 mm 60 mm with r = 6.15 and thickness 0.64 mm.
See Table 9 for list of components
Fig 11. Component layout for test circuit
Table 9.
List of components (see Figure 11)
Description
Component
Value
Dimensions
Catalogue number
[1]
[2]
C1, C2, C4, C5, multilayer ceramic chip capacitor
C6, C7, C10
22 pF
C3, C8, C9
multilayer ceramic chip capacitor
tantalum capacitor
470 pF
C11
C12
R1
4.7 F; 50 V
220 F; 63 V
560
Kemet T491D475K050AS
electrolytic capacitor
resistor
SMD 0805
R2
metafilm resistor
49.9 ; 0.6 W
L1
copper wire 1 mm diameter
length of loop = 20 mm;
height of loop = 10 mm
N1
N2
N-connector male
Suhner 13N-50-057/1
Suhner 23N-50-057/1
N-connector female
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
8 of 13
BLS2933-100
Microwave power LDMOS transistor
9. Package outline
Flanged ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
03-01-10
12-05-02
SOT502A
Fig 12. Package outline SOT502A
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
9 of 13
BLS2933-100
Microwave power LDMOS transistor
10. Revision history
Table 10. Revision history
Document ID
BLS2933-100#2
Modifications:
Release date
20150901
Data sheet status
Change notice
Supersedes
Product data sheet
-
BLS2933-100_1
• The format of this document has been redesigned to comply with the new identity guidelines
of Ampleon.
• Legal texts have been adapted to the new company name where appropriate.
BLS2933-100_1
20060801
Product data sheet
-
-
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
10 of 13
BLS2933-100
Microwave power LDMOS transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
11.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
11 of 13
BLS2933-100
Microwave power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12. Contact information
For more information, please visit:
http://www.ampleon.com
For sales office addresses, please visit:
http://www.ampleon.com/sales
BLS2933-100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
12 of 13
BLS2933-100
Microwave power LDMOS transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
7.1
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLS2933-100#2
相关型号:
BLS3135-10,114
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
BLS3135-10TRAY
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
BLS3135-20,114
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
BLS3135-20TRAY
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
BLS3135-50,114
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
BLS3135-50TRAY
TRANSISTOR S BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CERAMIC PACKAGE-2, BIP RF Power
NXP
©2020 ICPDF网 联系我们和版权申明