BLV10/B [ETC]
TRANSISTOR RF POWER ; 晶体管射频功率\n
| 型号： | BLV10/B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR RF POWER
|
| 文件： | 总11页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV10
VHF power transistor
August 1986
Product specification
File under Discrete Semiconductors, SC08a
Philips Semiconductors
Product specification
VHF power transistor
BLV10
It has a 3/8” flange envelope with a
ceramic cap. All leads are isolated
from the flange.
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
PL
W
GP
dB
η
%
zi
Ω
YL
mS
MHz
c.w.
13,5
175
8
>
9,0
>
70
2,8 + j1,2
76 − j16
c.w.
12,5
175
8
typ. 10,5
typ. 75
−
−
PIN CONFIGURATION
PINNING
PIN
DESCRIPTION
handbook, halfpage
1
2
3
4
collector
emitter
base
1
4
emitter
2
3
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV10
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
VCEO
VEBO
IC(AV)
ICM
max.
36 V
18 V
4 V
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
max.
max.
max.
max.
max.
1,5 A
4,0 A
20 W
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Prf
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
200 °C
MGP248
1.75
handbook, halfpage
30
MGP249
I
handbook, halfpage
C
(A)
P
tot
1.5
(W)
ΙΙΙ
20
1.25
1
derate by 0.12 W/K
0.1 W/K
ΙΙ
Ι
T
= 70 °C
T
= 25 °C
mb
h
10
0.75
0.5
5
10
15
20
0
0
V
(V)
CE
50
100
T
(°C)
h
I
Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation;
CE ≤ 16,5 V; f > 1 MHz.
V
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV10
THERMAL RESISTANCE
(dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
Rth j-mb(dc)
Rth j-mb(rf)
Rth mb-h
=
=
=
10,7 K/W
8,6 K/W
0,3 K/W
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
VBE = 0; IC = 5 mA
V(BR) CES
V(BR) CEO
V(BR)EBO
ICES
>
>
>
<
36 V
18 V
4 V
Collector-emitter breakdown voltage
open base; IC = 25 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 18 V
2 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
ESBO
ESBR
>
>
0,5 mJ
0,5 mJ
40
RBE = 10 Ω
D.C. current gain(1)
typ.
IC = 0,75 A; VCE = 5 V
hFE
10 to 100
Collector-emitter saturation voltage(1)
IC = 2 A; IB = 0,4 A
VCEsat
typ.
0,85 V
Transition frequency at f = 100 MHz(1)
−IE = 0,75 A; VCB = 13,5 V
−IE = 2 A; VCB = 13,5 V
fT
fT
typ.
typ.
950 MHz
850 MHz
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 13,5 V
Cc
typ.
16,5 pF
Feedback capacitance at f = 1 MHz
IC = 100 mA; VCE = 13,5 V
Collector-flange capacitance
Cre
Ccf
typ.
typ.
12 pF
2 pF
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV10
MGP250
MGP251
100
40
handbook, halfpage
handbook, halfpage
C
c
h
FE
(pF)
30
75
typ
V
= 13.5 V
CE
50
25
0
20
10
5 V
0
0
0
1
2
3
5
10
15
I
(A)
V
(V)
CB
C
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 Typical values; Tj = 25 °C.
MGP252
1250
f
T
(MHz)
V
= 13.5 V
1000
CB
10 V
750
500
250
0
0
1
2
3
−I (A)
E
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV10
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
V
CE (V)
PL (W)
PS (W)
GP (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
175
13,5
8
< 1,0
>
9,0
< 0,85
>
70
2,8 + j1,2 76 − j16
175
12,5
8
−
typ. 10,5
−
typ. 75
−
−
C6
L4
L7
50 Ω
T.U.T.
C1
L3
L1
50 Ω
C7
L5
L2
C3
C2
C4
C5
R1
L6
+V
MGP253
CC
Fig.7 Test circuit; c.w. class-B.
List of components:
C1
C2
C3
C4
C5
C7
L1
L2
L3
L5
L7
=
=
=
=
=
=
=
=
=
=
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
47 pF ceramic capacitor (500 V)
120 pF ceramic capacitor (500 V)
100 nF polyester capacitor
5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm
3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
=
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV10
150
72
L6
+V
CC
C4
L5
C5
R1
L3
L4
L1
C1
C2
C6
C7
L7
C3
L2
rivet
MGP254
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV10
MGP255
MGP256
15
15
150
handbook, halfpage
handbook, halfpage
G
T
= 25 °C
p
h
P
L
(W)
G
p
(dB)
η
(%)
T
= 70 °C
25 °C
h
70 °C
10
10
100
25 °C
70 °C
η
5
5
0
50
0
0
0
20
1
2
0
5
10
15
P
(W)
P
(W)
S
L
VCE = 13,5 V;
− − − VCE = 12,5 V.
VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.9 Typical values; f = 175 MHz;
Fig.10 Typical values; f = 175 MHz;
MGP257
10
The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under nominal
conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
handbook, halfpage
P
Lnom
(W)
(VSWR = 1)
VSWR =
10
7.5
5
50
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply
over-voltage ratio.
2.5
P
S
P
Snom
0
0
V
1.1
1.2
1.3
CE
V
CEnom
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C; Rth mb-h = 0,3 K/W;
VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1.
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV10
MGP258
MGP259
10
25
0
handbook, halfpage
handbook, halfpage
C
L
C
L
r , x
R
L
(Ω)
i
i
R
C
L
(pF)
(Ω)
5
0
20
−50
r
i
x
i
r
L
i
15
10
−100
−150
−200
R
L
x
i
−5
−10
5
0
0
100
200
300
100
200
300
f (MHz)
f (MHz)
Typical values; VCE = 13,5 V; PL = 8 W;
Typical values; VCE = 13,5 V; PL = 8 W;
Th = 25 °C
Th = 25 °C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (parallel components).
OPERATING NOTE
Below 70 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP260
20
handbook, halfpage
G
p
(dB)
15
10
5
0
0
100
200
300
f (MHz)
Typical values; VCE = 13,5 V; PL = 8 W;
Th = 25 °C
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLV10
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
BLV10
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11
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