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BSM121 [ETC]

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) ; 晶体管| MOSFET功率模块|独立| 200V V（ BR ） DSS | 130A I（ D）\n

BSM121


元器件型号：	BSM121
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 200V V(BR)DSS \| 130A I(D) 晶体管\| MOSFET功率模块\|独立\| 200V V（ BR ） DSS \| 130A I（ D）\n 晶体晶体管
PDF文件：	总1页 (文件大小：96K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM121参数

BSM121AR

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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32 INFINEON

BSM121AR(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D)

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20 ETC

BSM141

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 60A I(D)

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25 ETC

BSM141

Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4

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0 INFINEON

BSM150GAL100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)

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39 ETC

BSM150GAL120DLC

IGBT Module

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45 ETC

BSM150GAL120DN2

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

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58 INFINEON

BSM150GAL120DN2E3166

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

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41 INFINEON

BSM150GAL120DN2E3166

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-7

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0 INFINEON

BSM150GAR120DN2

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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0 INFINEON

BSM150GAR120DN2HOSA1

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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0 INFINEON

BSM150GB100D

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)

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101 ETC

BSM150GB100D

暂无描述

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1 INFINEON

BSM150GB120D

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)

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83 ETC

BSM150GB120DLC

Technische Information / Technical Information

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94 EUPEC

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