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BSM282F [ETC]

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 11A I(D) ; 晶体管| MOSFET电源模块|半桥| 800V V（ BR ） DSS | 11A I（ D）\n

BSM282F


元器件型号：	BSM282F
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET POWER MODULE \| HALF BRIDGE \| 800V V(BR)DSS \| 11A I(D) 晶体管\| MOSFET电源模块\|半桥\| 800V V（ BR ） DSS \| 11A I（ D）\n 晶体电源电路晶体管
PDF文件：	总1页 (文件大小：59K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM282F参数

BSM284F

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 20A I(D)

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50 ETC

BSM294F

TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 18A I(D)

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29 ETC

BSM300C12P3E201

Power Field-Effect Transistor,

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0 ROHM

BSM300C12P3E301

Power Field-Effect Transistor,

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0 ROHM

BSM300GA100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 300A I(C)

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55 ETC

BSM300GA120D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

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75 ETC

BSM300GA120DLC

IGBT-Modules

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70 EUPEC

BSM300GA120DLC

Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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3 INFINEON

BSM300GA120DN2

IGBT Module

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253 ETC

BSM300GA120DN2

IGBT Power Module

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100 EUPEC

BSM300GA120DN2

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SINGLE SWITCH 1, 4 PIN

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9 INFINEON

BSM300GA120DN2E3166

IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area)

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97 INFINEON

BSM300GA120DN2S

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 430A I(C)

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112 ETC

BSM300GA120DN2S

IGBT Power Module

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42 EUPEC

BSM300GA120DN2S

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN

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5 INFINEON

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