BSS65R [ETC]
SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR; SOT23封装PNP硅平面高速晶体管
| 型号： | BSS65R |
| 厂家： | 
ETC |
| 描述： | SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR |
| 文件： | 总1页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
BSS65
ISSUE 2 - SEPTEMBER 1995
✪
PARTMARKING DETAIL
BSS65 - L1
BSS65R - L5
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-12
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-12
V
-4
V
Peak Pulse Current
-200
mA
mA
mA
mW
°C
Continuous Collector Current
Base Current
IC
-100
IC
-50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
PTOT
tj:tstg
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
BreakdownVoltages
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
-12
-12
-4
V
IC=-10mA
V
IC=-10µA *
IE=-10µA
V
Cut-Off Currents
-100
-100
nA
nA
VCB=-6V, IE=0
VEB=-4V, IC=0
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.25
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
-0.82
-0.98
-1.20
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Static Forward Current hFE
Transfer Ratio
30
40
IC=-10mA, VCE=-0.3V
IC=-30mA, VCE=-0.5V
150
Transition Frequency
fT
400
MHz
pF
IC=-30mA, VCE=-10V,
f=100MHz
Collector-Base
Capacitance
Cobo
Cebo
6
6
VCB=-5V, IE=0,
f=1MHz
Emitter Base Capacitance
pF
VEB=-0.5V, IC=0, f=1MHz
Switching Times
Turn-On Time
Turn-Off Time
ton
toff
23
34
60
90
nS
nS
IC=-30mA
IB1 = -IB2= -1.5mA
VCC=-10V
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