BSV52LT1/D [ETC]
Switching Transistor ; 开关晶体管\n
| 型号： | BSV52LT1/D |
| 厂家： | 
ETC |
| 描述： | Switching Transistor
|
| 文件： | 总4页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
Switching Transistor
NPN Silicon
BSV52LT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
Value
12
Unit
Vdc
V
CEO
V
CBO
3
20
Vdc
1
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
I
100
mAdc
C
2
Symbol
Max
Unit
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
(1)
Total Device Dissipation FR–5 Board
P
D
225
mW
T = 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
R
q
JA
COLLECTOR
3
Total Device Dissipation
P
D
(2)
Alumina Substrate, T = 25°C
A
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
1
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
q
JA
BASE
T , T
–55 to +150
J
stg
2
EMITTER
BSV52LT1 = B2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc)
C
12
—
Collector Cutoff Current
I
CBO
(V = 10 Vdc, I = 0)
—
—
100
5.0
nAdc
µAdc
CB
E
(V = 10 Vdc, I = 0, T = 125°C)
CB
E
A
1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev. 1
BSV52LT1/D
BSV52LT1
ELECTRICAL CHARACTERISTICS (continued) (T = 25°C unless otherwise noted)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
H
—
FE
(I = 1.0 mAdc, V = 1.0 Vdc)
25
40
25
—
120
—
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 300 µAdc)
V
V
mVdc
mVdc
CE(sat)
BE(sat)
—
—
—
300
250
400
C
B
(I = 10 mAdc, I = 1.0 mAdc)
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
700
—
850
1200
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
MHz
pF
T
(I = 10 mAdc, V = 10 Vdc, f = 100 MHz)
400
—
—
C
CE
Output Capacitance
C
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
4.0
4.5
CB
E
Input Capacitance
C
pF
ibo
(V = 1.0 Vdc, I = 0, f = 1.0 MHz)
—
EB
C
SWITCHING CHARACTERISTICS
Storage Time
t
ns
ns
ns
s
(I = I = I = 10 mAdc)
—
—
—
13
12
18
C
B1
B2
Turn–On Time
(V = 1.5 Vdc, I = 10 mAdc, I = 3.0 mAdc)
BE
t
t
on
C
B
Turn–Off Time
(I = 10 mAdc, I = 3.0 mAdc)
C
off
B
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2
BSV52LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
determined by T , the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from the
θJA
device junction to ambient, and the operating temperature,
T . Using the values provided on the data sheet for the
A
SOT–23 package, P can be calculated as follows:
• Always preheat the device.
D
• The delta temperature between the preheat and soldering
should be 100°C or less.*
T
J(max) – TA
Rθ
PD =
JA
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
150°C – 25°C
556°C/W
PD =
= 225 milliwatts
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
The 556°C/W for the SOT–23 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SOT–23 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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3
BSV52LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
DIM MIN MAX
MILLIMETERS
S
C
B
MIN
2.80
1.20
0.89
0.37
1.78
MAX
3.04
1.40
1.11
1
2
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
V
G
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
0.0005 0.0040 0.013
0.0034 0.0070 0.085
K
L
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
0.35
0.89
2.10
0.45
S
V
H
J
D
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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BSV52LT1/D
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