select brandShort,logo,brand from pdf_brand where id=2 limit 1 BSY90_技术文档

BSY90 [ETC]

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-39 ; 晶体管| BJT | NPN | 25V V( BR ) CEO | 500MA I(C ) | TO- 39
BSY90
型号: BSY90
厂家: ETC    ETC
描述:

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-39
晶体管| BJT | NPN | 25V V( BR ) CEO | 500MA I(C ) | TO- 39

晶体 晶体管 开关
文件: 总1页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BSY91

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-5

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5 ETC

BSY92

TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-39

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77 ETC

BSY95

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18

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38 ETC

BSY95A

Small Signal Transistors

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12 CENTRAL

BSY95ALEADFREE

Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,

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1 CENTRAL

BSYP62

BSYP62 - Tranzystor krzemowy

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10 ETC

BSYP63

BSYP63 - Tranzystor krzemowy

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10 ETC

BSZ009NE2LS5

Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications.

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0 INFINEON

BSZ010NE2LS5

N-通道功率MOSFET

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0 INFINEON

BSZ011NE2LS5I

Power Field-Effect Transistor,

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1 INFINEON

BSZ013NE2LS5I

Metal Oxide Semiconductor Field Effect Transistor

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1 INFINEON

BSZ013NE2LS5IATMA1

Power Field-Effect Transistor, 32A I(D), 25V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN

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1 INFINEON

BSZ013NE2LS5I_15

Metal Oxide Semiconductor Field Effect Transistor

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1 INFINEON

BSZ014NE2LS5IF

Metal Oxide Semiconductor Field Effect Transistor

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0 INFINEON

BSZ014NE2LS5IF_15

Metal Oxide Semiconductor Field Effect Transistor

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0 INFINEON

BSZ017NE2LS5I

Metal Oxide Semiconductor Field Effect Transistor

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0 INFINEON

BSZ017NE2LS5IATMA1

Power Field-Effect Transistor, 27A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN

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0 INFINEON

BSZ017NE2LS5I_15

Metal Oxide Semiconductor Field Effect Transistor

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0 INFINEON

BSZ018N04LS6

Power Field-Effect Transistor, 27A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8

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0 INFINEON

BSZ018NE2LS

n-Channel Power MOSFET

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24 INFINEON