BUK7735-55A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F ; 晶体管| MOSFET | N沟道| 55V V( BR ) DSS | 20A I( D) | TO- 220F\n型号: | BUK7735-55A |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-220F
|
文件: | 总13页 (文件大小:282K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUK7735-55A
TrenchMOS™ standard level FET
Rev. 01 — 15 February 2001
Product specification
M3D308
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7735-55A in SOT186A (TO-220F).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 150 °C rated
■ Standard level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
c
c
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
2
drain (d)
d
s
3
source (s)
mb
mounting base;
isolated
g
MBB076
1
2 3
MBK110
SOT186A (TO-220F)
1. TrenchMOS is a trademark of Royal Philips Electronics.
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
55
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
−
20
A
Ptot
Tj
total power dissipation
junction temperature
−
25
W
−
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 20 A
Tj = 25 °C
29
35
64
mΩ
mΩ
Tj = 150 °C
−
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
55
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
−
55
V
−
±20
20
V
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
−
A
−
14
A
IDM
Ptot
Tstg
Tj
peak drain current
[1] −
79
A
total power dissipation
storage temperature
−
25
W
°C
°C
−55
−55
+150
+150
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
pulsed reverse drain current
Tmb = 25 °C
−
−
20
79
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID = 20 A;
−
123
mJ
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting T j = 25 °C
[1] IDM is limited by chip, not package.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
2 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
03ne37
03ne36
120
100
80
60
40
20
0
120
P
I
der
(%)
100
der
(%)
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
mb
T
( C)
mb
V
GS ≥ 4.5 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
2
10
R
= V / I
DS
DSon
D
I
D
(A)
t
= 10 us
p
100 us
10
1 ms
D.C.
t
10 ms
p
P
δ =
1
T
100 ms
t
t
p
T
-1
10
2
10
1
10
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
3 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Rth(j-a)
Parameter
Conditions
Value
55
Unit
K/W
K/W
thermal resistance from junction to ambient
Vertical in still air
Rth(j-mb)
thermal resistance from junction to mounting Figure 4
base
5
7.1 Transient thermal impedance
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
t
p
P
δ =
-1
10
T
t
t
p
T
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
4 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
55
50
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
2
1
−
3
−
−
4
V
V
V
Tj = 150 °C
Tj = −55 °C
−
4.4
IDSS
drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 20 A;
Figure 7 and 8
Tj = 25 °C
−
−
29
35
64
mΩ
mΩ
Tj = 150 °C
−
Dynamic characteristics
Ciss
Coss
Crss
td(on)
tr
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
−
−
−
−
−
−
−
−
650
170
110
10
870
200
150
−
pF
pF
pF
ns
ns
ns
ns
nH
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
62
−
td(off)
tf
turn-off delay time
fall time
24
−
20
−
Ld
internal drain inductance
measured from drain lead
from package to centre of
die
4.5
−
Ls
internal source inductance
measured from source lead
from package to source
bond pad
−
7.5
−
nH
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
5 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain (diode forward) IS = 15 A; VGS = 0 V;
−
0.95
1.2
V
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A;
dIS/dt = −100 A/µs;
VGS = −10 V; VDS = 30 V
−
−
40
80
−
−
ns
Qr
nC
03nb81
20
03nb80
120
50
DSon
(mΩ)
V
(V) = 12 14 16 18
R
I
GS
D
(A)
100
80
60
40
20
0
45
40
35
30
25
20
11
10.5
9.5
8.5
7.5
6.5
5.5
4.5
0
2
4
6
8
10
(V)
DS
5
10
15
20
V
V
(V)
GS
Tj = 25 °C
Tj = 25 °C; ID = 20 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nc24
2.2
03nb82
80
DSon
(mΩ)
a
R
2
V
(V) =
9
10
GS
5.5
6
6.5
7
8
1.8
1.6
1.4
1.2
1
70
60
50
40
30
20
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100
140
180
0
20
40
60
80
100
o
T ( C)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
6 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
03aa32
03aa35
5
-1
-2
-3
-4
-5
-6
10
10
10
10
10
10
4.5
I
D
V
GS(th)
(A)
4
(V)
max.
3.5
3
typ.
min
2.5
2
min
typ
max
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nb78
2500
C (pF)
2000
16
g
fs
(S)
14
12
10
8
1500
1000
6
Ciss
4
500
2
Coss
Crss
2
0
0
-2
-1
10
10
1
10
10
(V)
0
10
20
30
40
50
V
I
(A)
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
7 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
03nb77
50
10
9
8
7
6
5
4
3
2
1
0
V
(V)
I
GS
D
(A)
V
= 14 V
DD
V
= 44 V
DD
40
30
20
10
T = 150 O
j
C
T = 25 O
C
j
0
0
2
4
6
8
10
(V)
0
10
20
30
Q
(nC)
V
G
GS
VDS = 25 V
Tj = 25 °C; ID = 20 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
I
S
(A)
100
80
60
T = 150 O
C
T = 25 O
C
j
j
40
20
0
0.0
0.5
1.0
1.5
2.0
V
(V)
SD
VGS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
8 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.2
2.7
2.3
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are 2.5 × 0.8 max. depth
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-06-11
99-09-13
SOT186A
3-lead TO-220F
Fig 16. SOT186A.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
9 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20010215
Product specification; initial version.
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
10 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07998
© Philips Electronics N.V. 2001 All rights reserved.
Product specification
Rev. 01 — 15 February 2001
11 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
Philips Semiconductors - a worldwide company
Argentina: see South America
Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Tel. +43 160 101, Fax. +43 160 101 1210
Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102
Canada: Tel. +1 800 234 7381
Romania: see Italy
Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia: see South America
Czech Republic: see Austria
Slovenia: see Italy
Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland: Tel. +358 961 5800, Fax. +358 96 158 0920
France: Tel. +33 14 099 6161, Fax. +33 14 099 6427
Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800
India: Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia: see Singapore
South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: Tel. +1 800 234 7381
Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico: Tel. +9-5 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553
Middle East: see Italy
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Internet: http://www.semiconductors.philips.com
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA71)
9397 750 07998
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 15 February 2001
12 of 13
BUK7735-55A
TrenchMOS™ standard level FET
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 15 February 2001
Document order number: 9397 750 07998
相关型号:
BUK78150-55115
TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
BUK78150-55135
TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
NXP
BUK78150-55A/T3
TRANSISTOR 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN, FET General Purpose Power
NXP
©2020 ICPDF网 联系我们和版权申明