BUK7775-55A [NXP]
N-channel TrenchMOS standard level FET; N沟道的TrenchMOS标准水平FET
| 型号： | BUK7775-55A |
| 厂家： | 
NXP |
| 描述： | N-channel TrenchMOS standard level FET |
| 文件： | 总12页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Rev. 02 — 7 June 2004
Product data
M3D308
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7775-55A in SOT186A (TO-220F).
2. Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 150 °C rated
■ Standard level compatible.
3. Applications
■ Automotive and general purpose power switching:
◆ 12 V and 24 V loads
◆ Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT186A, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
2
drain (d)
d
s
3
source (s)
mb
mounting base;
isolated
g
mbb076
1
2 3
MBK110
SOT186A (TO-220F)
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
Max
55
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
-
-
-
-
Tmb = 25 °C; VGS = 10 V
Tmb = 25 °C
11
A
Ptot
Tj
total power dissipation
junction temperature
18
W
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A
Tj = 25 °C
63
-
75
mΩ
mΩ
Tj = 150 °C
138
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
55
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
-
-
-
-
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
55
V
±20
11
V
Tmb = 25 °C; VGS = 10 V;
A
Figure 2 and 3
T
mb = 100 °C; VGS = 10 V;
-
8
A
A
Figure 2
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
[1] -
46
Figure 3
Ptot
Tstg
Tj
total power dissipation
storage temperature
Tmb = 25 °C; Figure 1
-
18
W
−55
−55
+150
+150
°C
°C
operating junction temperature
Source-drain diode
IDR
reverse drain current (DC)
peak reverse drain current
Tmb = 25 °C
-
-
11
46
A
A
IDRM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 11 A;
-
50
mJ
VDS ≤ 55 V; VGS = 10 V; RGS = 50 Ω;
starting T j = 25 °C
[1] IDM is limited by chip, not package.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
2 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
03ne37
03ne36
120
120
P
I
der
(%)
100
der
(%)
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
mb
T
( C)
mb
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
2
03ne03
10
I
D
(A)
limit R
DSon
= V / I
DS
D
t
= 10 µs
p
10
100 µs
1 ms
DC
1
10 ms
100 ms
-1
10
2
10
10
1
V
(V)
DS
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
3 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to
mounting base
Figure 4
-
-
6.8 K/W
Rth(j-a)
thermal resistance from junction to ambient vertical in still air
-
55
-
K/W
7.1 Transient thermal impedance
10
Z
th(j-mb)
δ = 0.5
(K/W)
1
t
p
P
δ =
-1
10
T
t
t
p
T
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
4 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
55
50
-
-
-
-
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
2
3
-
4
V
V
V
Tj = 150 °C
Tj = −55 °C
1.2
-
-
-
4.4
IDSS
drain-source leakage current VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
-
-
-
0.05
10
µA
µA
nA
-
500
100
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A;
Figure 7 and 8
Tj = 25 °C
-
-
63
-
75
mΩ
mΩ
Tj = 150 °C
138
Dynamic characteristics
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
VGS = 10 V; VDD = 44 V;
ID = 10 A; Figure 14
-
-
-
-
-
-
-
-
-
-
-
9.8
2
-
nC
nC
nC
pF
pF
pF
ns
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
-
4.7
320
90
60
10
50
70
40
4.5
-
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
483
113
90
-
VDD = 30 V; RL = 1.2 Ω;
VGS = 5 V; RG = 10 Ω
-
ns
td(off)
tf
turn-off delay time
fall time
-
ns
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
-
nH
Ls
internal source inductance
from source lead 6 mm from
package to source bond pad
-
-
7.5
-
nH
V
Source-drain diode
VSD
source-drain (diode forward) IS = 15 A; VGS = 0 V;
0.85
1.2
voltage
Figure 15
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = −100 A/µs
VGS = −10 V; VDS = 30 V
-
-
32
-
-
ns
Qr
120
nC
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
5 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
60
160
DSon
(mΩ)
I
V
(V) =16 14
R
D
GS
(A)
20
50
40
30
20
10
0
140
120
100
80
12
10.5
9.5
8.5
7.5
6.5
60
5.5
4.5
40
0
2
4
6
8
10
(V)
5
10
15
20
V
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; ID = 10 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nc24
2.2
03nc10
180
DSon
(mΩ)
a
R
2
7
5.5
V
(V) =
10
GS
6
8
6.5
1.8
1.6
1.4
1.2
1
160
140
120
100
80
0.8
0.6
0.4
0.2
0
60
40
-60
-20
20
60
100
140
180
0
10
20
30
40
50
o
T ( C)
I
(A)
D
j
Tj = 25 °C
RDSon
a =
---------------------------
RDSon(25 C)
°
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
6 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
03aa32
03aa35
5
VGS(th)
(V)
10-1
ID
(A)
10-2
4
max
min
typ
max
3
10-3
10-4
10-5
10-6
typ
min
2
1
0
-60
0
60
120
180
0
2
4
6
V
GS (V)
T ( C)
°
j
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03nc11
8
600
C (pF)
500
g
(S)
fs
6
400
Ciss
300
200
100
0
4
2
0
Coss
Crss
-2
-1
10
2
10
1
10
10
(V)
0
5
10
15
20
25
V
I
(A)
DS
D
Tj = 25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
7 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
25
10
GS
(V)
I
V
D
(A)
9
8
7
6
5
4
3
2
1
0
V
= 44 V
DD
20
V
= 14 V
DD
15
10
5
T = 150 OC
j
T = 25O
C
j
0
0
2
4
6
8
10
(V)
0
5
10
15
V
Q
(nC)
G
GS
VDS = 25 V
Tj = 25 °C; ID = 10 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
120
I
S
(A)
100
80
60
OC
T = 150
j
40
20
0
T = 25 O
j
C
0.0
0.5
1.0
1.5
V
2.0
(V)
SD
VGS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
8 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
9. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
E
P
A
A
1
q
D
1
mounting
base
T
D
j
L
L
2
1
K
Q
b
b
1
L
2
1
2
3
b
c
w
M
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(2)
L
A
A
b
c
D
D
1
E
e
e
1
j
K
L
L
P
Q
q
T
w
b
b
UNIT
mm
2
1
1
1
2
max.
1.1
0.9
1.4
1.0
2.7
1.7
0.6 14.4 3.30
0.4 13.5 2.79
2.6
2.3
4.6 2.9
4.0 2.5
0.9
0.7
3.0
2.6
0.7 15.8 6.5 10.3
0.4 15.2 6.3 9.7
3.2
3.0
3
5.08
2.54
2.5
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are 2.5 × 0.8 max. depth
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-03-12
02-04-09
SOT186A
3-lead TO-220F
Fig 16. SOT186A.
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
9 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
02 20040607
Product data (9397 750 13325)
Modifications:
Latest version of package outline imported into data sheet.
•
01 20010215
-
Product specification (9397 750 07996)
9397 750 13325
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 02 — 7 June 2004
10 of 12
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
11. Data sheet status
[1]
[2][3]
Level Data sheet status
Product status
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 12
9397 750 13325
Product data
Rev. 02 — 7 June 2004
BUK7775-55A
N-channel TrenchMOS™ standard level FET
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 7 June 2004
Document order number: 9397 750 13325
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