select brandShort,logo,brand from pdf_brand where id=2 limit 1 BUZ50_技术文档

BUZ50 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.5A I(D) | TO-220 ; 晶体管| MOSFET | N沟道| 1KV V( BR ) DSS | 2.5AI (D ) | TO- 220\n
BUZ50
型号: BUZ50
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.5A I(D) | TO-220
晶体管| MOSFET | N沟道| 1KV V( BR ) DSS | 2.5AI (D ) | TO- 220\n

晶体 晶体管
文件: 总5页 (文件大小:199K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BUZ50A

SIPMOS Power Transistor (N channel Enhancement mode)

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INFINEON

BUZ50A-E3044

Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50A-E3045

Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50A-E3046

Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50A220M

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.5A I(D) | TO-220AB

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ETC

BUZ50A220M-ISO

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.5A I(D) | TO-220AB

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ETC

BUZ50B

SIPMOS Power Transistor (N channel Enhancement mode)

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INFINEON

BUZ50B-E3044

Power Field-Effect Transistor, 2A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

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INFINEON

BUZ50B-E3045

Power Field-Effect Transistor, 2A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50B-E3046

Power Field-Effect Transistor, 2A I(D), 1000V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50B220M

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.5A I(D) | TO-220AB

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ETC

BUZ50B220M-ISO

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2A I(D) | TO-220AB

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ETC

BUZ50C

SIPMOS Power Transistor (N channel Enhancement mode)

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INFINEON

BUZ50C-E3044

Power Field-Effect Transistor, 2.3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50C-E3045

Power Field-Effect Transistor, 2.3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ50C-E3046

Power Field-Effect Transistor, 2.3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ51

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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INFINEON

BUZ51-E3044

Power Field-Effect Transistor, 3.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ51-E3045

Power Field-Effect Transistor, 3.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ51-E3046

Power Field-Effect Transistor, 3.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON