BUZ80AFI [ETC]
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k) ; N - 沟道增强型功率MOS晶体管( 197.88 K)\n型号: | BUZ80AFI |
厂家: | ETC |
描述: | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k)
|
文件: | 总10页 (文件大小:200K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUZ80A
BUZ80AFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
BUZ80A
BUZ80AFI
VDSS
RDS(on)
ID
800 V
800 V
< 3 Ω
< 3 Ω
3.8 A
2.4 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 2.5 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INPUT CAPACITANCE
LOW GATE CHARGE
3
3
2
2
1
1
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
ISOWATT220
APPLICATIONS
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
CONSUMER AND INDUSTRIAL LIGHTING
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUZ80A
BUZ80AFI
VDS
VDG R
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
800
800
± 20
V
V
V
3.8
2.3
15
2.4
1.4
A
ID
A
IDM(•)
Ptot
15
A
Total Dissipation at Tc = 25 oC
100
0.8
40
W
W/oC
V
oC
oC
Derating Factor
0.32
2000
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/10
April 1993
BUZ80A/BUZ80AFI
THERMAL DATA
TO-220
ISOWATT220
Rthj-case Thermal Resistance Junction-case
Max
1.25
3.12
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
3.8
A
(pulse width limited by Tj max, δ < 1%)
EAS
EAR
IAR
Single Pulse Avalanche Energy
200
8
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
2.2
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 C
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
800
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
o
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS = VGS ID = 1 mA
2
4
V
RDS(on) Static Drain-source On VGS = 10 V ID = 1.7 A
2.5
3
6
Ω
Ω
Resistance
VGS = 10 V ID = 1.7 A Tc = 100oC
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
3.8
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 1.7 A
1
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1100
150
55
pF
pF
pF
2/10
BUZ80A/BUZ80AFI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V ID = 2.3 A
65
150
90
200
ns
ns
RG = 50 Ω
VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 600 V ID = 3.8 A
RG = 50 Ω VGS = 10 V
80
110
70
A/µs
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400 V ID = 5 A VGS = 10 V
55
8
26
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 600 V ID = 3.8 A
RG = 50 Ω VGS = 10 V
(see test circuit, figure 5)
110
140
150
145
190
200
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Source-drain Current
Test Conditions
Min.
Typ.
Max.
Unit
ISD
3.8
15
A
A
ISDM(• ) Source-drain Current
(pulsed)
VSD ( ) Forward On Voltage
ISD = 7.6 A VGS = 0
2
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3.8 A di/dt = 100 A/µs
VR = 100 V
(see test circuit, figure 5)
500
4.3
17
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Package
Safe Operating Areas For ISOWATT220 Package
3/10
BUZ80A/BUZ80AFI
Thermal Impedeance For TO-220 Package
Thermal Impedance For ISOWATT220 Package
Derating Curve For ISOWATT220 Package
Transfer Characteristics
Derating Curve For TO-220 Package
Output Characteristics
4/10
BUZ80A/BUZ80AFI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
BUZ80A/BUZ80AFI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
BUZ80A/BUZ80AFI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge Test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/10
BUZ80A/BUZ80AFI
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
4.40
1.23
2.40
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/10
BUZ80A/BUZ80AFI
ISOWATT220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.015
0.030
0.045
0.045
0.195
0.094
0.393
TYP.
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.4
F
0.75
1.15
1.15
4.95
2.4
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
Ø
1 2 3
L4
L2
P011G
9/10
BUZ80A/BUZ80AFI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedfor use as criticalcomponents in life supportdevices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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10/10
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