BUZ908P [ETC]

POWER MOSFETS FOR AUDIO APPLICATIONS; 功率MOSFET用于音频应用
BUZ908P
型号: BUZ908P
厂家: ETC    ETC
描述:

POWER MOSFETS FOR AUDIO APPLICATIONS
功率MOSFET用于音频应用

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BUZ907P  
BUZ908P  
MAGNA  
TEC  
MECHANICAL DATA  
Dimensions in mm  
P–CHANNEL  
POWER MOSFET  
4.69 (0.185)  
5.31 (0.209)  
1.49 (0.059)  
2.49 (0.098)  
15.49 (0.610)  
16.26 (0.640)  
POWER MOSFETS FOR  
AUDIO APPLICATIONS  
3.55 (0.140)  
3.81 (0.150)  
FEATURES  
1
2
3
• HIGH SPEED SWITCHING  
1.65 (0.065)  
2.13 (0.084)  
0.40 (0.016)  
0.79 (0.031)  
• SEMEFAB DESIGNED AND DIFFUSED  
• HIGH VOLTAGE (220V & 250V)  
• HIGH ENERGY RATING  
2.87 (0.113)  
3.12 (0.123)  
1.01 (0.040)  
1.40 (0.055)  
• ENHANCEMENT MODE  
2.21 (0.087)  
2.59 (0.102)  
• INTEGRAL PROTECTION DIODES  
5.25 (0.215)  
BSC  
• COMPLIMENTARY N–CHANNEL  
BUZ902P & BUZ903P  
TO-247  
Pin 2 – Source  
Case– Source  
Pin 1 – Gate  
Pin 3 – Drain  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
BUZ907P  
BUZ908P  
case  
V
V
Drain – Source Voltage  
-220V  
-250V  
DSX  
Gate – Source Voltage  
Continuous Drain Current  
Body Drain Diode  
±14V  
-8A  
GSS  
I
I
D
-8A  
D(PK)  
P
Total Power Dissipation  
Storage Temperature Range  
@ T  
= 25°C  
125W  
D
stg  
j
case  
T
T
–55 to 150°C  
150°C  
Maximum Operating Junction Temperature  
Thermal Resistance Junction – Case  
R
1°C/W  
θJC  
Prelim. 01/97  
Magnatec. Telephone (01455) 554711. Fax (01455) 558843  
BUZ907P  
BUZ908P  
MAGNA  
TEC  
STATIC CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Characteristic  
Test Conditions  
Min.  
-220  
-250  
±14  
Typ.  
Max. Unit  
BV  
Drain – Source Breakdown Voltage V = 10V  
BUZ907P  
V
DSX  
GS  
I = -10mA  
BUZ908P  
V
V
D
BV  
V
Gate – Source Breakdown Voltage V = 0  
I = ±100µA  
GSS  
DS  
G
Gate – Source Cut–Off Voltage  
V
V
-0.15  
-1.5  
-12  
1.5  
-10  
V
V
V
= -10V  
= 0  
I = -100mA  
GS(OFF)  
DS  
GD  
GS  
D
V
*
Drain – Source Saturation Voltage  
Static – Source Resistance  
I = -8A  
DS(SAT)  
D
R
*
= -10  
I = -8A  
DS(on)  
D
mA  
V
= -220V  
DS  
BUZ907P  
= -250V  
I
Drain – Source Cut–Off Current  
Forward Transfer Admittance  
V
V
= 10V  
DSX  
GS  
DS  
mA  
S
-10  
2
V
DS  
BUZ908P  
I = -3A  
0.7  
yfs*  
= -10V  
D
DYNAMIC CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Characteristic  
Test Conditions  
Min.  
Typ.  
Max. Unit  
C
C
C
Input Capacitance  
TBA  
iss  
V
= -10V  
DS  
Output Capacitance  
TBA  
TBA  
TBA  
TBA  
pF  
oss  
rss  
f = 1MHz  
V = -20V  
DS  
Reverse Transfer Capacitance  
Turn–on Time  
t
t
on  
off  
ns  
Turn-off Time  
I = -5A  
D
* Pulse Test: Pulse Width = 300µs , Duty Cycle 2%.  
D
G
S
Prelim. 01/97  
Magnatec. Telephone (01455) 554711. Fax (01455) 558843  

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