CMT2210LW [ETC]
Low-Cost 315/433.92 MHz OOK Stand-Alone Receiver;
| 型号： | CMT2210LW |
| 厂家： | 
ETC |
| 描述： | Low-Cost 315/433.92 MHz OOK Stand-Alone Receiver |
| 文件： | 总20页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMT2210LW
Low-Cost 315/433.92 MHz OOK Stand-Alone Receiver
Features
Applications
Operation Frequency: 315/433.92 MHz
OOK Demodulation
Low-Cost Consumer Electronics Applications
Home and Building Automation
Symbol Rate: 0.1 to 3.4 ksps
Sensitivity: -108 dBm at 2.4 ksps, 0.1% BER
Receiver Bandwidth: 200 kHz
Image Rejection Ratio: 25 dB
Large Signal Handling: 10 dBm
Stand-Alone, No External MCU Control Required
No Register Configuration Required
Supply Voltage: 1.8 to 3.6 V
Low Power Consumption
Infrared Receiver Replacements
Industrial Monitoring and Controls
Remote Automated Meter Reading
Remote Lighting Control System
Wireless Alarm and Security Systems
Remote Keyless Entry (RKE)
Ordering Information
3.3 mA @ 315 MHz
Part Number
Frequency
Package
MOQ
3.8 mA @ 433.92 MHz
315/433.92
MHz
SOP8
/T&R
CMT2210LW-ESR
2,500 pcs
RoHS Compliant
315/433.92
MHz
SOP8
/Tube
SOP8 Package
CMT2210LW-ESB
1,000 pcs
More Ordering Info: See Page 15
Descriptions
The CMT2210LW is an ultra low-cost, low power, high
performance OOK stand-alone RF receiver for 315/433.92
MHz wireless applications. It is part of the CMOSTEK
NextGenRFTM family, which includes a complete line of
transmitters, receivers and transceivers. The CMT2210LW
is a true plug-and-run device, no register configuration and
manually-tune is required. The device operates at either
315 MHz or 433.92 MHz through selecting an 18.8744 MHz
or 26 MHz crystal, the data rate is optimized to around 2.4
ksps which fits well with the low-end data encoder or MCU
based transmitter. The CMT2210LW operates from 1.8 V to
3.6 V, finely work till the end of most batteries’ power. It
consumes 3.3 mA current while achieving -109 dBm
receiving sensitivity at 315 MHz and consumes 3.8 mA
current while achieving -108 dBm receiving sensitivity at
433.92 MHz. The SOP8 package is available for easier and
lower-cost manufacturing. The CMT2210LW receiver
together with the CMT211x transmitter enables an ultra low
cost RF link. For NextGenRFTM receivers with more
flexibility, the user can use the CMT2210AW.
SOP8
RFIN
VCON
GND
VDD
1
2
3
4
8
7
6
5
VCOP
XIN
DOUT
XOUT
CMT2210LW Top View
Copyright © By CMOSTEK
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Rev 0.8 | Page 1/20
CMT2210LW
Typical Application
ANT
C1
1
8
7
VDD
GND
VDD
RFIN
VCON
VCOP
XIN
C0
L1
2
L2
3
4
6
5
DOUT
XOUT
DOUT
X1
C2
C3
Figure 1. CMT2210LW Typical Application Schematic
Table 1. BOM of 315/433.92 MHz Typical Application
Value (Match to 50Ω ANT) Value (Common Used ANT)
Designator
Descriptions
Unit
Manufacturer
315 MHz
433.92 MHz
315 MHz
433.92 MHz
CMT2210LW, low-cost
315/433.92 MHz OOK
stand-alone receiver
±20 ppm, SMD32*25 mm,
crystal
U1
-
-
-
CMOSTEK
X1
L1
L2
18.8744
33
26
27
18.8744
68
26
33
MHz
nH
EPSON
±5%, 0603 multi-layer chip
inductor
Murata LQG18
Murata LQG18
±5%, 0603 multi-layer chip
inductor
33
22
33
22
nH
C1
C0
±0.25 pF, 0402 NP0, 50 V
±20%, 0402 X7R, 25 V
±5%, 0402 NP0, 50 V
5.6
3.3
4.3
2.7
pF
uF
pF
Murata GRM15
Murata GRM15
Murata GRM15
0.1
27
0.1
27
C2, C3
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Rev 0.8 | Page 2/20
CMT2210LW
Abbreviations
Abbreviations used in this data sheet are described below
AGC
AN
Automatic Gain Control
Application Notes
Bit Error Rate
PC
Personal Computer
Printed Circuit Board
Phase Lock Loop
Pseudorandom Noise 9
Power On Reset
Power Up
PCB
PLL
PN9
POR
PUP
QFN
BER
BOM
BSC
BW
Bill of Materials
Basic Spacing between Centers
Bandwidth
DC
Direct Current
Quad Flat No-lead
Radio Frequency
EEPROM
Electrically Erasable Programmable Read-Only RF
Memory
RFPDK
RF Products Development Kit
Restriction of Hazardous Substances
Received Signal Strength Indicator
Receiving, Receiver
ESD
ESR
IF
Electro-Static Discharge
Equivalent Series Resistance
Intermediate Frequency
Low Noise Amplifier
Local Oscillator
RoHS
RSSI
Rx
LNA
LO
SAR
SOP
SPI
Successive Approximation Register
Small Outline Package
Serial Port Interface
LPOSC
Max
MCU
Min
Low Power Oscillator
Maximum
TH
Threshold
Microcontroller Unit
Minimum
Tx
Transmission, Transmitter
Typical
Typ
MOQ
NP0
NC
Minimum Order Quantity
Negative-Positive-Zero
Not Connected
VCO
XOSC
XTAL/Xtal
Voltage Controlled Oscillator
Crystal Oscillator
Crystal
OOK
On-Off Keying
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Rev 0.8 | Page 3/20
CMT2210LW
Table of Contents
1. Electrical Characteristics............................................................................................................................................ 5
1.1 Recommended Operation Conditions ................................................................................................................... 5
1.2 Absolute Maximum Ratings................................................................................................................................... 5
1.3 Receiver Specifications......................................................................................................................................... 6
1.4 Crystal Oscillator................................................................................................................................................... 6
2. Pin Descriptions .......................................................................................................................................................... 7
3. Typical Performance Characteristics......................................................................................................................... 8
4. Typical Application Schematic ................................................................................................................................... 9
5. Functional Descriptions............................................................................................................................................ 10
5.1 Overview............................................................................................................................................................. 10
5.2 Modulation, Frequency and Symbol Rate ........................................................................................................... 10
5.3 Main Configurations ............................................................................................................................................ 11
5.4 Internal Blocks Description.................................................................................................................................. 11
5.4.1 RF Front-end and AGC............................................................................................................................ 11
5.4.2 IF Filter..................................................................................................................................................... 11
5.4.3 RSSI ........................................................................................................................................................ 12
5.4.4 SAR ADC................................................................................................................................................. 12
5.4.5 Crystal Oscillator...................................................................................................................................... 12
5.4.6 Frequency Synthesizer ............................................................................................................................ 12
5.5 Operation States ................................................................................................................................................. 12
5.6 Duty Cycle Receive Mode................................................................................................................................... 13
6. Ordering Information................................................................................................................................................. 15
7. Package Outline......................................................................................................................................................... 16
8. Top Marking ............................................................................................................................................................... 17
8.1 CMT2210LW Top Marking.................................................................................................................................. 17
9. Other Documentations.............................................................................................................................................. 18
10. Document Change List.............................................................................................................................................. 19
11. Contact Information .................................................................................................................................................. 20
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Rev 0.8 | Page 4/20
CMT2210LW
1. Electrical Characteristics
VDD = 3.3 V, TOP = 25 ℃, FRF = 433.92 MHz, sensitivities are measured in receiving a PN9 sequence and matching to 50 Ω
impedance, with the BER of 0.1%. All measurements are performed using the board CMT2210LW-EM V1.0, unless otherwise
noted.
1.1 Recommended Operation Conditions
Table 2. Recommended Operation Conditions
Parameter
Symbol
VDD
Conditions
Min
1.8
-40
1
Typ
Max
3.6
85
Unit
V
Operation Voltage Supply
Operation Temperature
Supply Voltage Slew Rate
TOP
℃
mV/us
1.2 Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings[1]
Parameter
Supply Voltage
Symbol
Conditions
Min
Max
3.6
Unit
V
VDD
VIN
-0.3
-0.3
-40
-50
Interface Voltage
Junction Temperature
Storage Temperature
Soldering Temperature
ESD Rating[2]
VDD + 0.3
125
V
TJ
℃
TSTG
TSDR
150
℃
Lasts at least 30 seconds
Human Body Model (HBM)
@ 85 ℃
255
℃
-2
2
kV
mA
Latch-up Current
Notes:
-100
100
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
[2]. The CMT2210LW is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
Caution! ESD sensitive device. Precaution should be used when handling the device in order
to prevent permanent damage.
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Rev 0.8 | Page 5/20
CMT2210LW
1.3 Receiver Specifications
Table 4. Receiver Specifications
Conditions
Parameter
Symbol
Min
Typ
Max
Unit
FXTAL = 18.8744 MHz
FXTAL = 26 MHz
315
MHz
MHz
ksps
Frequency Range
Symbol Rate
FRF
SR
433.92
0.1
3.4
FRF = 315 MHz, SR = 2.4 ksps, BER =
S315
-109
-108
10
dBm
dBm
dBm
0.1%
Sensitivity
FRF = 433.92 MHz, SR = 2.4 ksps, BER =
0.1%
S433.92
Saturation Input Signal
Level
PLVL
IDD315
IDD433.92
ISLEEP
FRES
FRF =315 MHz
3.3
3.8
60
mA
mA
nA
Working Current
FRF = 433.92 MHz
Sleep Current
Frequency Resolution
Frequency Synthesizer
Settle Time
24.8
Hz
TLOCK
From XOSC settled
150
52
us
dB
dB
SR = 1 ksps, ±1 MHz offset, CW
interference
SR = 1 ksps, ±2 MHz offset, CW
interference
Blocking Immunity
BI
74
SR = 1 ksps, ±10 MHz offset, CW
interference
75
25
dB
dB
Image Rejection Ratio
Input 3rd Order Intercept
Point
IMR
IIP3
IF = 280 kHz
Two tone test at 1 MHz and 2 MHz offset
frequency. Maximum system gain settings
-25
dBm
Receiver Bandwidth
Receiver Start-up Time
BW
200
7.3
kHz
ms
TSTART-UP
From power up to receive
1.4 Crystal Oscillator
Table 5. Crystal Oscillator Specifications
Parameter
Symbol
FXTAL315
Conditions
FRF = 315 MHz
FRF = 433.92 MHz
Min
Typ
18.8744
26
Max
Unit
MHz
MHz
ppm
pF
Crystal Frequency[1]
FXTAL433.92
Crystal Tolerance[2]
Load Capacitance
Crystal ESR
±20
CLOAD
Rm
10
15
20
60
Ω
XTAL Startup Time[3]
tXTAL
400
us
Notes:
[1]. The CMT2210LW can directly work with external reference clock input to XIN pin (a coupling capacitor is required) with
peak-to-peak amplitude of 0.3 to 0.7 V.
[2]. This is the total tolerance including (1) initial tolerance, (2) crystal loading, (3) aging, and (4) temperature dependence.
The acceptable crystal tolerance depends on RF frequency and channel spacing/bandwidth.
[3]. This parameter is to a large degree crystal dependent.
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Rev 0.8 | Page 6/20
CMT2210LW
2. Pin Descriptions
RFIN
VCON
VCOP
XIN
GND
VDD
1
2
3
4
8
7
6
5
DOUT
XOUT
Figure 2. CMT2210LW Pin Assignments
Table 6. CMT2210LW Pin Descriptions
Pin Number
Name
I/O
Descriptions
1
2
3
4
5
6
7
8
GND
VDD
I
I
Ground
Power supply input
DOUT
XOUT
XIN
O
O
I
Received data output
Crystal oscillator output
Crystal oscillator input or external reference clock input
VCOP
VCON
RFIN
IO
I
VCO tank, connected to an external inductor
RF signal input to the LNA
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Rev 0.8 | Page 7/20
CMT2210LW
3. Typical Performance Characteristics
Current vs. Supply Voltage
Current vs. Temperature
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
4.0
3.8
3.6
3.4
3.2
3.0
433.92 MHz
3.3 V
1.8 V
3.6 V
2.8
315 MHz
2.6
2.4
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
-50
-30
-10
10
30
50
70
90
110
Supply Voltage (V)
Temperature (℃)
Figure 3. Current vs. Voltage, FRF
315/433.92 MHz, SR = 1 ksps
=
Figure 4. Current vs. Temperature, FRF
433.92 MHz, SR = 1 ksps
=
Sensitivity vs. Supply Voltage
Sensitivity vs. Temperature
-105.0
-106.0
-107.0
-108.0
-109.0
-110.0
-111.0
-112.0
-113.0
-105.5
-106.0
-106.5
-107.0
-107.5
-108.0
-108.5
-109.0
-109.5
-110.0
-110.5
433.92 MHz
315 MHz
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
-50
-30
-10
10
30
50
70
90
Supply Voltage (V)
Temperature (℃)
Figure 5. Sensitivity vs. Supply Voltage, SR
= 1 ksps, BER = 0.1%
Figure 6. Sensitivity vs. Temperature, FRF = 433.92
MHz, VDD = 3.3 V, SR = 1 ksps, BER = 0.1%
Sensitivity vs. Symbol Rate
Sensitivity vs. BER
-107.0
-107.0
-107.5
-108.0
-108.5
-109.0
-109.5
-110.0
-110.5
-107.5
-108.0
-108.5
-109.0
-109.5
-110.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00%
0.01%
0.10%
1.00%
10.00%
100.00%
SymbolRate (ksps)
Bit Error Rate
Figure 7. Sensitivity vs. SR, FRF = 433.92
MHz, VDD = 3.3 V, BER = 0.1%
Figure 8. Sensitivity vs. BER, FRF = 433.92
MHz, VDD = 3.3 V, SR = 1 ksps
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Rev 0.8 | Page 8/20
CMT2210LW
4. Typical Application Schematic
ANT
C1
1
8
7
VDD
GND
RFIN
VCON
VCOP
XIN
C0
L1
2
VDD
L2
3
6
5
DOUT
XOUT
DOUT
4
X1
C2
C3
Figure 9. Typical Application Schematic
Notes:
1. The general layout guidelines are listed below. For more design details, please refer to “AN107 CMT221x Schematic and
PCB Layout Design Guideline”.
Use as much continuous ground plane metallization as possible.
Use as many grounding vias (especially near to the GND pins) as possible to minimize series parasitic inductance
between the ground pour and the GND pins.
Avoid using long and/or thin transmission lines to connect the components.
Place C0 as close to the CMT2210LW as possible for better filtering.
2. The table below shows the BOM of typical application for 50 Ω antennas and other common used antennas in the market.
Table 7. BOM of 315/433.92 MHz Typical Application
Value (Match to 50Ω ANT) Value (Common Used ANT)
Designator
Descriptions
Unit
Manufacturer
315 MHz
433.92 MHz
315 MHz
433.92 MHz
CMT2210LW, low-cost
315/433.92 MHz OOK
stand-alone receiver
±20 ppm, SMD32*25 mm,
crystal
U1
-
-
-
CMOSTEK
X1
L1
L2
18.8744
33
26
27
18.8744
68
26
33
MHz
nH
EPSON
±5%, 0603 multi-layer chip
inductor
Murata LQG18
Murata LQG18
±5%, 0603 multi-layer chip
inductor
33
22
33
22
nH
C1
C0
±0.25 pF, 0402 NP0, 50 V
±20%, 0402 X7R, 25 V
±5%, 0402 NP0, 50 V
5.6
3.3
4.3
2.7
pF
uF
pF
Murata GRM15
Murata GRM15
Murata GRM15
0.1
27
0.1
27
C2, C3
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Rev 0.8 | Page 9/20
CMT2210LW
5. Functional Descriptions
AGC
I-LMT
I-MXR
OOK
DEMOD
Image
Rejection
Band-pass
Filter
Radio
Controller
LNA
RSSI
SAR
DOUT
RFIN
AFC & AGC
Q-MXR
Q-LMT
VCO
F
XTAL
Loop
Filter
LO GEN
PFD/CP
LDOs
Bandgap
POR
DIVIDER
VDD
GND
AFC & Σ-Δ Modulator
XOSC
XIN XOUT
VCON VCOP
Figure 10. Functional Block Diagram
5.1 Overview
The CMT2210LW is ultra low power, high performance, low-cost OOK stand-alone RF receiver for various 315/433.92 MHz
wireless applications. It is part of the CMOSTEK NextGenRFTM family, which includes a complete line of transmitters, receivers
and transceivers. The chip is based on a fully integrated, low-IF receiver architecture. The low-IF architecture facilitates a very
low external component count and does not suffer from powerline - induced interference problems. The synthesizer contains a
VCO and a low noise fractional-N PLL with an output frequency resolution of 24.8 Hz. The VCO operates at 2x the Local
Oscillator (LO) frequency to reduce spurious emissions. Every analog block is calibrated on each Power-on Reset (POR) to the
internal reference voltage. The calibration helps the device to finely work under different temperatures and supply voltages. The
baseband filtering and demodulation is done by the digital demodulator. The demodulated signal is output to the external MCU
via the DOUT pin.
The CMT2210LW is a true plug-and-run device, no register control or manufacturing programming is needed. This simplifies the
development and manufacturing effort significantly. The operation frequency can be changed between 315 and 433.92 MHz by
selecting proper value of crystal, and it can work with most low end transmitters with its good adaptability. The CMT2210LW
operates from 1.8 to 3.6 V so that it can finely work with most batteries to their useful power limits. The receive current is only 3.3
mA at 315 MHz and 3.8 mA at 433.92 MHz. The CMT2210LW receiver together with the CMT211x transmitter enables an ultra
low cost RF link.
5.2 Modulation, Frequency and Symbol Rate
The CMT2210LW supports OOK demodulation with the symbol rate from 0.1 to 3.4 ksps. It supports the license free ISM
frequencies around 315 MHz and 433.92 MHz. The internal frequency synthesizer contains a high-purity VCO and a low noise
fractional-N PLL with an output frequency resolution of 24.8 Hz. See the table below for the demodulation, frequency and symbol
rate information.
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Rev 0.8 | Page 10/20
CMT2210LW
Table 8. Modulation, Frequency and Symbol Rate
Parameter
Demodulation
Value
Unit
OOK
315/433.92
24.8
-
Frequency
MHz
Hz
Frequency Resolution
Symbol Rate
0.1 to 3.4
ksps
5.3 Main Configurations
Unlike other NextGenRFTM receivers, the CMT2210LW does not need any register control or manufacturing programming. The
configuration of the device is fixed in order to save the development effort, reduce system cost and simplify the manufacturing
process. The main configurations are listed in the table below. Please note that if more flexibility is needed in the system, the user
can use other NextGenRFTM receivers like CMT2210AW and etc. For those products, an embedded EEPROM is available on
chip for the user to configure all the product features.
Table 9. CMT2210LW Main Configurations
Parameters
Frequency
CMT2210LW-ESR
Unit
MHz
-
315/433.92
OOK
Modulation
Symbol Rate
ksps
kHz
us
RF Settings
0.1 – 3.4
200
Receiver Bandwidth
Xtal Stabilizing Time
Sleep Time
310
3
ms
ms
-
Operation
Settings
Rx Time
2000
Demod Method
Fixed Demod TH
Fixed TH
60
OOK Settings
-
5.4 Internal Blocks Description
5.4.1 RF Front-end and AGC
The CMT2210LW features a low-IF receiver. The RF front-end of the receiver consists of a Low Noise Amplifier (LNA), I/Q mixer
and a wide-band power detector. Only a low-cost inductor and a capacitor are required for matching the LNA to any 50 Ω
antennas. The input RF signal induced on the antenna is amplified and down-converted to the IF frequency for further
processing.
By means of the wide-band power detector and the attenuation networks built around the LNA, the Automatic Gain Control (AGC)
loop regulates the RF front-end’s gain to get the best system linearity, selectivity and sensitivity performance, even though the
receiver suffers from strong out-of-band interference.
5.4.2 IF Filter
The signals coming from the RF front-end are filtered by the fully integrated 3rd-order band-pass image rejection IF filter which
achieves over 25 dB image rejection ratio typically. The IF center frequency is dynamically adjusted to enable the IF filter to
locate to the right frequency band, thus the receiver sensitivity and out-of-band interference attenuation performance are kept
optimal despite the manufacturing process tolerances. The IF bandwidth is fixed at 200 kHz.
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Rev 0.8 | Page 11/20
CMT2210LW
5.4.3 RSSI
The subsequent multistage I/Q Log amplifiers enhance the output signal from IF filter before it is fed for demodulation. Receive
Signal Strength Indicator (RSSI) generators are included in both Log amplifiers which produce DC voltages that are directly
proportional to the input signal level in both of I and Q path. The resulting RSSI is a sum of both these two paths. Extending from
the nominal sensitivity level, the RSSI achieves dynamic range over 66 dB.
The CMT2210LW integrates a patented DC-offset cancellation engine. The receiver sensitivity performance benefits a lot from
the novel, fast and accurate DC-offset removal implementation.
5.4.4 SAR ADC
The on-chip 8-bit SAR ADC digitalizes the RSSI for OOK demodulation.
5.4.5 Crystal Oscillator
The crystal oscillator is used as the reference clock for the PLL frequency synthesizer and system clock for the digital blocks. A
crystal should be used with appropriate loading capacitors (C2 and C3 in Figure 9 of Page 9). The values of the loading
capacitors depend on the total load capacitance CL specified for the crystal. The total load capacitance seen between the XIN
and XOUT pin should equal CL for the crystal to oscillate at desired frequency.
1
C
L
=
+ Cparasitic
1
C
1
C
+
2
3
The parasitic capacitance is constituted by the input capacitance and PCB tray capacitance. The ESR of the crystal should be
within the specification in order to ensure a reliable start-up. An external signal source can easily be used in place of a
conventional XTAL and should be connected to the XIN pin. The incoming clock signal is recommended to have a peak-to-peak
swing in the range of 300 mV to 700 mV and AC-coupled to the XIN pin.
5.4.6 Frequency Synthesizer
A fractional-N frequency synthesizer is used to generate the LO frequency for the down conversion I/Q mixer. The frequency
synthesizer is fully integrated except the VCO tank inductor which enables the ultra low-power receiver system design. Using the
26 MHz reference clock provided by the crystal oscillator or the external clock source, it can generate receive frequencies of 315
and 433.92 MHz with a frequency resolution of 24.8 Hz.
The VCO always operates at 2x of LO frequency. A high Q (at VCO frequency) tank inductor should be chosen to ensure the
VCO oscillates at any conditions meanwhile burns less power and gets better phase noise performance. In addition, properly
layout the inductor matters a lot of achieving a good phase noise performance and less spurious emission. The recommended
VCO inductors for different LO frequency bands are shown as bellow.
Table 10. VCO Inductor for 315/433.92 MHz Frequency Band
LO Frequency Band (MHz)
VCO Inductor (nH)
315
433.92
33
22
Multiple subsystem calibrations are performed dynamically to ensure the frequency synthesizer operates reliably in any working
conditions.
5.5 Operation States
As the CMT2210LW is operating in duty cycle receive mode, the device will go through the states shown as the figure below after
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Rev 0.8 | Page 12/20
CMT2210LW
the power up.
PUP
SLEEP
XTAL
RX
TUNE
Duty-Cycle Receive Mode
Figure 11. Operation States in Duty Cycle Receive Mode
Power Up (PUP) State
Once the device is powered up, the device will go through the Power Up (PUP) sequence which includes the task of releasing the
Power-On Reset (POR), turning on the crystal and calibrating the internal blocks. The PUP takes about 4 ms to finish in the
always receive mode. The average current of the PUP sequence is about 0.9 mA.
SLEEP State
In this state, all the internal blocks are powered down except the sleep timer. The sleep time is fixed at 3 ms. The sleep current is
about 60 nA.
XTAL State
Once the device wakes up from the SLEEP State, the crystal oscillator restarts to work. The current consumption in this state is
about 520 uA.
TUNE State
The device is tuned to the desired frequency and ready to receive. It usually takes approximately 300 us to complete the tuning
sequence. The current consumption in this state is about 2 mA.
RX State
The device receives the incoming signals and outputs the demodulated data on the DOUT pin. The current in this state is about
3.3 mA (315 MHz) or 3.8 mA (433.92 MHz).
5.6 Duty Cycle Receive Mode
In the duty-cycle mode, after the PUP the device will automatically repeat the sequence of SLEEP, XTAL, TUNE and RX until the
device is powered down. This allows the device to re-tune the synthesizer regularly to adept to the changeable environment and
therefore remain its highest performance. The device will continuously receive any incoming signals during the RX state and
send out the demodulated data on the DOUT pin. The PUP sequence consumes about 4 ms. See the figure below for the timing
and current consumption of the duty cycle receive mode
www.hoperf.com
Rev 0.8 | Page 13/20
CMT2210LW
Data
(DOUT pin)
3.8 mA
3.8 mA
Current
2.0 mA
2.0 mA
900 uA
520 uA
520 uA
60 nA
60 nA
PUP
about 4 ms
SLEEP XTAL
TUNE
RX
SLEEP
XTAL
TUNE
RX State
about 3 ms
about 2 seconds
Figure 12. Timing and Current Consumption for Duty-Cycle Receive Mode
The advantages of the duty-cycle receive mode are listed below.
Maintaining the highest performance of the device by regular frequency re-tune.
Increasing the system stability by regular sleep (resetting most of the blocks).
If more current saving is required in the application, or other parameter need to be configured, the user can also use
CMT2210AW or other NextGenRFTM receivers with embedded EEPROM built-in and all product features configurable. For the
more details, please refer to the “AN108 CMT2210A Configuration Guideline”.
www.hoperf.com
Rev 0.8 | Page 14/20
CMT2210LW
6. Ordering Information
Table 11. CMT2210LW Ordering Information
Package
Type
Package
Option
Operating
MOQ /
Part Number
Descriptions
Condition
Multiple
Low-Cost 315/433.92 MHz
OOK Stand-Alone Receiver
Low-Cost 315/433.92 MHz
OOK Stand-Alone Receiver
1.8 to 3.6 V,
CMT2210LW-ESR[1]
SOP8
SOP8
Tape & Reel
Tube
2,500
1,000
-40 to 85 ℃
1.8 to 3.6 V,
CMT2210LW-ESB[1]
-40 to 85 ℃
Note:
[1]. “E” stands for extended industrial product grade, which supports the temperature range from -40 to +85 ℃.
“S” stands for the package type of SOP8.
“R” stands for the tape and reel package option, the minimum order quantity (MOQ) for this option is 2,500 pieces. “B”
stands for the tube package option, the minimum order quantity (MOQ) for this option is 1,000 pieces.
If the CMT2210LW-ESR cannot meet the application requirements, the user can order the CMT2210AW-EQR for
self-customizing with the RFPDK.
Visit www.cmostek.com/products to know more about the product and product line.
Contact sales@cmostek.com or your local sales representatives for more information.
www.hoperf.com
Rev 0.8 | Page 15/20
CMT2210LW
7. Package Outline
The SOP8 illustrates the package details for the CMT2210LW. The table below lists the values for the dimensions shown in the
illustration.
D
h
A3
A
0.25
A2
c
θ
L
A1
L1
E
E1
e
b
Figure 13. SOP8 Package
Table 12. SOP8 Package Dimensions
Size (millimeters)
Symbol
Min
Typ
Max
A
A1
A2
A3
b
-
-
1.75
0.10
1.30
0.60
0.39
0.21
4.70
5.80
3.70
-
0.225
1.50
0.70
0.48
0.26
5.10
6.20
4.10
1.40
0.65
-
c
-
D
4.90
E
6.00
E1
e
3.90
1.27 BSC
h
0.25
0.50
-
0.50
0.80
L
-
L1
θ
1.05 BSC
-
0
8°
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Rev 0.8 | Page 16/20
CMT2210LW
8. Top Marking
8.1 CMT2210LW Top Marking
CMT2210L
①②
YYWW
④
③ ⑤⑥
Figure 14. CMT2210LW Top Marking
Table 13. CMT2210LW Top Marking Explanation
Mark Method
Pin 1 Mark
Laser
Circle’s diameter = 1 mm
Font Height
Font Width
0.6 mm, right-justified
0.4 mm
Line 1 Marking
CMT2210L, represents part number CMT2210LW
YYWW is the Date code assigned by the assembly house. YY represents the last two digits of the
mold year and WW represents the workweek
Line 2 Marking
①②③④⑤⑥ is the internal tracking number
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Rev 0.8 | Page 17/20
CMT2210LW
9. Other Documentations
Table 14. Other Documentations for CMT2210LW
Brief
Name
Descriptions
Details of CMT2210/13/17/19AW and CMT2210LW PCB
schematic and layout design rules, RF matching network and
other application layout design related issues.
CMT221x Schematic and PCB Layout
Design Guideline
AN107
AN108
CMT2210A Configuration Guideline
Details of configuring CMT2210AW features on the RFPDK.
www.hoperf.com
Rev 0.8 | Page 18/20
CMT2210LW
10.Document Change List
Table 15. Document Change List
Rev. No
Chapter
Description of Changes
Initial released version
Supported frequency range is changed
Date
0.7
0.8
All
All
2014-11-28
2015-01-16
www.hoperf.com
Rev 0.8 | Page 19/20
CMT2210LW
11.Contact Information
Hope Microelectronics Co., Ltd
Address: 2/F,Building3,Pingshan Private Enterprise science and Technology Park,Xili Town,Nanshan District,Shenzhen,China
Tel: +86-755-82973805
Fax: +86-755-82973550
Email: sales@hoperf.com
hoperf@gmail.com
Website: http://www.hoperf.com
http://www.hoperf.cn
Copyright. CMOSTEK Microelectronics Co., Ltd. All rights are reserved.
The information furnished by CMOSTEK is believed to be accurate and reliable. However, no responsibility is assumed for
inaccuracies and specifications within this document are subject to change without notice. The material contained herein is
the exclusive property of CMOSTEK and shall not be distributed, reproduced, or disclosed in whole or in part without prior
written permission of CMOSTEK. CMOSTEK products are not authorized for use as critical components in life support
devices or systems without express written approval of CMOSTEK. The CMOSTEK logo is a registered trademark of
CMOSTEK Microelectronics Co., Ltd. All other names are the property of their respective owners.
www.hoperf.com
Rev 0.8 | Page 20/20
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