CSB631KF [ETC]

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126 ; 晶体管| BJT | PNP | 120V V（ BR ） CEO | 1A I（C ） | TO- 126\n


型号：	CSB631KF
厂家：	ETC
描述：	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1A I(C) \| TO-126 晶体管\| BJT \| PNP \| 120V V（ BR ） CEO \| 1A I（C ） \| TO- 126\n 晶体晶体管
文件：	总3页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

CSB631, CSB631K

TO-126 (SOT-32) Plastic Package

CSD600, CSD600K

CSB631, 631K

CSD600, 600K

PNP PLASTIC POWER TRANSISTORS

NPN PLASTIC POWER TRANSISTORS

Low frequency Power Amplifier and Medium Speed Switching Applications

PIN CONFIGURATION

1. EMITTER

2. COLLECTOR

3. BASE

ALL DIMENSIONS IN MM

ABSOLUTE MAXIMUM RATINGS

631

600

max. 100

max.

631K

600K

120 V

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current

CBO

CEO

1.0

8.0

Total power dissipation up to T = 25°C

max.

Junction temperature

max.

150

°C

Collector-emitter saturation voltage

= 0.5 A; I = 50 mA

CEsat

max.

0.4

D.C. current gain

= 50 mA; V

= 5 V

min.

max.

320

RATINGS (at T =25°C unless otherwise specified)

Limiting values

Collector-base voltage (open emitter)

Collector-emitter voltage (open base)

max. 100

120 V

CBO

CEO

Continental Device India Limited

Data Sheet

Page 1 of 3

CSB631, CSB631K

CSD600, CSD600K

631

600

631K

600K

Emitter-base voltage (open collector)

Collector current

Collector current (peak)

max.

5.0

1.0

2.0

1.0

8.0

150

EBO

ºC

Total power dissipation up to T = 25°C

Junction temperature

Storage temperature

–65 to +150

stg

CHARACTERISTICS

= 25°C unless otherwise specified

amb

631

600

631K

600K

Collector cutoff current

= 0; V = 50 V

max.

1.0

µA

120 V

Emitter cut-off current

= 0; V = 4 V

CBO

EBO

max.

1.0

Breakdown voltages

= 1 mA; I = 0

min. 100

min.

CEO

CBO

EBO

= 10 µA; I = 0

120 V

= 10 µA; I = 0

5.0

Saturation voltages

= 500 mA; I = 50 mA

CEsat

BEsat

max.

0.4

1.2

D.C. current gain

= 50 mA; V

= 5 V

min.

max.

320

= 500 mA; V

= 5 V

min.

Transition frequency

= 50 mA; V

= 10 V

PNP

NPN

typ.

110

130

MHz

Output capacitance

= 10 V; I = 0; f = 1 MHz PNP

typ.

NPN

* h

classification: D60 - 120, E = 100 - 200, F 160 - 320

Continental Device India Limited

Data Sheet

Page 2 of 3

Notes

Disclaimer

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited

for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as

to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/

CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete

information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;

neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life

saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor

Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own

risk and CDIL will not be responsible for any damages resulting from such sale(s).

CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.

CDIL is a registered Trademark of

Continental Device India Limited

C-120 Naraina Industrial Area, New Delhi 110 028, India.

Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290

e-mail sales@cdil.com

www.cdil.com

Continental Device India Limited

Data Sheet

Page 3 of 3

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