CVB1031 [ETC]

CVB1031 and CVB1151:Silicon Step Recovery Diode...|Varactor:Step Recovery Diodes ; CVB1031和CVB1151 ：硅阶跃恢复二极管... |变容二极管：阶跃恢复二极管\n


型号：	CVB1031
厂家：	ETC
描述：	CVB1031 and CVB1151:Silicon Step Recovery Diode...\|Varactor:Step Recovery Diodes CVB1031和CVB1151 ：硅阶跃恢复二极管... \|变容二极管：阶跃恢复二极管\n 二极管阶跃恢复二极管变容二极管
文件：	总2页 (文件大小：28K)
中文：	中文翻译
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Silicon Step Recovery Diode Chips

CVB1031 and CVB1151

Features

■ For Frequency Multiplying and Pulse

Shaping

■ Fast Transition Time for Multiplication to

18 GHz

■ Long Carrier Lifetime for Input Frequencies

Below 50 MHz

■ Rugged, Passivated Chip Design

Absolute Maximum Ratings

Characteristic

Value

Breakdown Voltage

100 mA

Description

Reverse Voltage (V_R)

Alpha’s product line of silicon step recovery diode chips are

designed for use in high order frequency multiplier, comb

generator and pulse shaping applications. These mesa

designed chips have a small outline (12 x 12 mils nominal)

and are fully passivated resulting in low leakage current and

high reliability. The CVB1031-000 may be used at input

frequencies below 50 MHz and will generate harmonics

beyond 12 GHz.The CVB1151-000 may be used at input

frequencies below 100 MHz and will generate harmonics

beyond 18 GHz.

Forward Current (I_F)

Power Dissipation (P_D) @ 25°C

250 mW

Operating Temperature (T_OP

Storage Temperature (T_ST

)

-55 to +150°C

-65 to +200°C

)

Electrical Characteristics at 25°C

Breakdown

Carrier

Lifetime

(nS)

Transition

Cutoff

Input

Outut

Part

Number

Voltage

(V)

C_J@ 6 V

(pF)

C_J@ 0 V

(pF)

Time Frequency Frequency Frequency Outline

(pS)

(GHz)

Min.

300

(MHz)

Typ.

(GHz)

Typ.

Drawing

Min.

Max.

0.5

Typ.

0.5

Min.

Max.

100

CVB1031-000

CVB1151-000

0.25

50–1000

100–3000

5–12

9–18

150-801

150-806

0.5

0.4

300

1. Breakdown voltage specified at 10 µA.

2. Capacitance specified at 1 MHz.

3. Carrier lifetime specified at 10 mA.

4. Transition time specified at V_R= 10 V and I_F= 10 mA.

5. Cutoff frequency calculated from C_J@ 6 V and R_Sat 100 mA, 100 MHz.

Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com

Specifications subject to change without notice. 8/01A

Silicon Step Recovery Diode Chips

CVB1031 and CVB1151

Typical Performance Data

SPICE Model

0.6

0.5

PORT

P_anode

port = 1

CVB1031-000

0.4

0.3

V_J= V_J

CVB1151-000

0.2

RES

R_S

R = R_S

_G= 1.11 → 1.43

_TI= 3 → 2

_F=0

CAP

C_P

C = C_P

0.1

_F=1

DIODE

Varactor_Diode

AREA = 1

_C= 0.5

_V= 0

_BV= 1e-3

_SR= 0

_R= 2

_KF= 0

_BV= 1

_BVL= 0

_BVL= 1

MODEL = Diode_Model

MODE = nonlinear

Reverse Voltage (V)

Capacitance vs. Reverse Voltage

PORT

_BV1= 0

_NOM= 27

_FE= 1

P_Cathode

port = 2

Outline Drawing

C_J0

ANODE

METALIZED

GOLD DOT

C_V=

_M+ C_P

V_R

V_J

0.010 (0.251 mm) MIN.

0.014 (0.356 mm) MAX. SQ.

Parameter

CVB1031-000 CVB1151-000

Units

R_S

3E-17

0.12

1.02

2E-8

0.20

0.31

0.70

0.69

3E-17

0.13

1.03

1E-8

0.30

0.25

1.00

0.69

Ω

150-801:

0.002 (0.051 mm) MIN.

150-806:

C_J0

C_P

0.0011 (0.028 mm) MIN.

0.004 (0.127 mm) MIN.

0.006 (0.152 mm) MAX.

SILICON

E_G

XTI

F_C

B_V

I_BV

V_J

CATHODE METALIZED BACK

CONTACT GOLD

0.50

Chip

Style

Bonding Pad

Nominal (In.)

Chip Size (In.)

Min.

Max.

0.014

1.00E-05

150-801

150-806

0.002 (Min.)

0 .010

0.0011 (Min.)

SPICE model parameters extracted from measured values may not reflect

exact electronic or physical properties. See application note APN1004.

Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email sales@skyworksinc.com • www.skyworksinc.com

Specifications subject to change without notice. 8/01A

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