DEMO-ATF-5X1M4A [ETC]
Demonstration circuit board for ATF-541M4 and ATF-551M4 ; 演示电路板ATF - 541M4和ATF- 551M4
| 型号： | DEMO-ATF-5X1M4A |
| 厂家： | 
ETC |
| 描述： | Demonstration circuit board for ATF-541M4 and ATF-551M4
|
| 文件： | 总24页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Agilent ATF-551M4 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Miniature Leadless Package
Data Sheet
Features
• Very low noise figure and high
linearity
• Single Supply Enhancement Mode
Technology[1] optimized for 3V
operation
• Excellent uniformity in product
specifications
Description
MiniPak 1.4 mm x 1.2 mm Package
Agilent Technologies’ ATF-551M4
is a high dynamic range, super
low noise, single supply
E-pHEMT GAAs FET housed in a
thin miniature leadless package.
• 400 micron gate width
• Thin miniature package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-reel packaging option
available
The combination of small device
size, super low noise (under 1 dB
Fmin from 2 to 6 GHz), high
linearity and low power makes
the ATF-551M4 ideal for LNA or
hybrid module designs in wire-
less receiver in the 450 MHz to
10 GHz frequency band.
Pin Connections and
Package Marking
Specifications
• 2 GHz; 2.7V, 10 mA (typ.)
• 24.1 dBm output 3rd order intercept
Drain
Pin 4
Source
Pin 3
• 14.6 dBm output power at 1 dB gain
compression
Vx
Gate
Pin 2
Source
Pin 1
Applications include Cellular/
PCS/ WCDMA handsets and data
modem cards, fixed wireless
infrastructure in the 2.4, 3.5 GHz
and UNII frequency bands, as
well as 2.4 GHz 802.11b, 5 GHz
802.11a and HIPERLAN/2
• 0.5 dB noise figure
• 17.5 dB associated gain
Note:
Top View. Package marking provides orientation,
product identification and date code.
Applications
• Low Noise Amplifier for:
“V” = Device Type Code
– Cellular/PCS/WCDMA hand-
sets and modem cards
Wireless LAN PC-cards.
“x” = Date code character. A different
character is assigned for each month and
year.
– 2.4 GHz, 3.5 GHz and UNII fixed
wireless infrastructure
Note:
1. Agilent’s enhancement mode E-pHEMT
devices are the first commercially available
single-supply GaAs transistors that do not
need a negative gate bias voltage for
operation. They can help simplify the design
and reduce the cost of receivers and
transmitters in many applications in the
450 MHz to 10 GHz frequency range.
– 2.4 GHz 802.11b Wireless LAN
– 5 GHz 802.11a and HIPERLAN
Wireless LAN
•
General purpose discrete E-pHEMT
for other ultra low noise applications
ATF-551M4 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device above any one of
these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
VGD
IDS
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
5
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
6 mW/°C for TL > 40°C.
V
-5 to +0.8
V
5
4. Thermal resistance measured using
150°C Liquid Crystal Measurement method.
5. Device can safely handle +3 dBm RF Input
Power provided IGS is limited to 1 mA. IGS at
P1dB drive RF level is bias circuit dependent.
See applications section for additional
information.
mA
mA
mW
dBm
°C
100
IGS
Gate Current[5]
1
Pdiss
Pin max.
TCH
Total Power Dissipation[3]
RF Input Power
270
3
Channel Temperature
Storage Temperature
Thermal Resistance[4]
150
TSTG
θjc
°C
-65 to 150
240
°C/W
70
60
50
40
30
20
10
0.7V
0.6V
0.5V
0.4V
0.3V
0
0
1
2
3
4
5
6
7
V
(V)
DS
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
Product Consistency Distribution Charts[6]
180
150
120
90
150
160
Cpk = 1.64
Cpk = 2.85
Cpk = 2.46
Stdev = 0.19
Stdev = 0.25
Stdev = 0.06
120
90
60
30
0
120
-3 Std
+3 Std
-3 Std
+3 Std
80
60
40
30
0
0.29
0
22
23
24
25
26
15
16
17
18
19
0.49
0.69
NF
0.89
1.09
OIP3
GAIN (dBm)
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
ATF-551M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs
Vth
Idss
Gm
Operational Gate Voltage
Threshold Voltage
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
V
0.3
0.47
0.37
0.1
0.65
0.53
3
V
0.18
—
Saturated Drain Current
Transconductance
µA
Vds = 2.7V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 –0.7 = 0.05V
mmho
110
220
285
Igss
NF
Gate Leakage Current
Vgd = Vgs = -2.7V
µA
—
—
95
Noise Figure[1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
—
—
0.5
0.5
0.9
—
Gain
Gain [1]
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dB
dB
15.5
—
17.5
18.0
18.5
—
OIP3
Output 3rd Order
Intercept Point[1]
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
22
—
24.1
30.0
—
—
P1dB
Notes:
1dB Compressed
Output Power[1]
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
dBm
dBm
—
—
14.6
16.0
—
—
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
50Ω Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Output
50Ω Output
Transmission
Line Including
Gate Bias T
Input
Output
Matching Circuit
Γ_mag = 0.3
Γ_ang = 11°
(0.3 dB loss)
Matching Circuit
Γ_mag = 0.3
Γ_ang = 9°
DUT
(0.9 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
ATF-551M4 Electrical Specifications (see notes 2 and 3, as indicated)
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Fmin
Minimum Noise Figure[2] f = 900 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
0.27
0.41
0.61
0.88
—
—
—
—
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Ga
Associated Gain [2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dB
dB
dB
dB
—
—
—
—
21.8
17.9
14.2
12.0
—
—
—
—
OIP3
Output 3rd Order
Intercept Point[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
22.1
24.3
24.5
—
—
—
P1dB
1dB Compressed
Output Power[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
dBm
dBm
dBm
—
—
—
14.3
14.5
14.3
—
—
—
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
3
ATF-551M4 Typical Performance Curves
26
25
24
23
22
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
21
20
19
2V
2.7V
3V
2V
2.7V
3V
18
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
I
d
d
d
Figure 6. Gain vs. I and V at 900 MHz[1]
ds ds
.
Figure 7. Fmin vs. I and V at 900 MHz[2]
ds ds
.
Figure 8. OIP3 vs. I and V at 900 MHz[1]
.
ds ds
7
6
18
17
16
15
14
13
12
11
10
9
5
4
3
2
1
0
2V
2.7V
3V
2V
2.7V
3V
-1
-2
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
d
d
Figure 9. IIP3 vs. I and V at 900 MHz[1]
ds ds
.
Figure 10. P1dB vs. I and V at 900 MHz[1]
.
ds ds
Notes:
1. Measurements at 900MHz were made using
an ICM fixture with a double stub tuner at the
input tuned for low noise and a double stub
tuner at the output tuned for maximum OIP3.
Circuit losses have been de-embedded from
actual measurements.
2. The Fmin values are based on a set of 16
noise figure measurements made at 16
different impedances using an ATN NP5 test
system. From these measurements Fmin is
calculated. Refer to the noise parameter
measurement section for more information.
4
ATF-551M4 Typical Performance Curves, continued
20
19
18
17
16
15
0.6
0.5
0.4
0.3
0.2
0.1
0
36
32
28
24
20
16
2V
2.7V
3V
2V
2.7V
3V
2V
2.7V
3V
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
I
d
d
d
Figure 11. Gain vs. I and V at 2 GHz[1]
.
Figure 12. Fmin vs. I and V at 2 GHz[2]
.
Figure 13. OIP3 vs. I and V at 2 GHz[1]
.
ds ds
ds
ds
ds
ds
17
16
15
14
13
12
11
10
18
16
14
12
10
8
6
4
2V
2.7V
3V
2V
2.7V
3V
2
0
0
5
10
15
20
(mA)
25
30
35
0
5
10
15
20
(mA)
25
30
35
I
I
d
d
Figure 14. IIP3 vs. I and V at 2 GHz[1]
.
Figure 15. P1dB vs. I and V at 2 GHz[1]
.
ds ds
ds
ds
Notes:
1. Measurements at 2 GHz with biasing 2.7V,
10 mA were made on a fixed tuned
Measurements taken other than 2.7V, 10 mA
biasing was made using a double stub tuner
at the input tuned for low noise and a double
stub tuner at the output tuned for maximum
OIP3. Circuit losses have been de-embedded
from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
production test board that was tuned for
optimal OIP3 match with reasonable noise
figure. This circuit represents a trade-off
between optimal noise match, maximum OIP3
match and a realizable match based on
production test board requirements.
5
ATF-551M4 Typical Performance Curves, continued
30
25
20
15
10
5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
26
25
24
23
22
21
20
19
18
2V 10 mA
2.7V 10 mA
2V 10 mA
2.7V 10 mA
2V 10 mA
2.7V 10 mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 16. Gain vs. Bias over Frequency[1]
.
Figure 17. Fmin vs. Bias over Frequency[2]
.
Figure 18. OIP3 vs. Bias over Frequency[1]
.
16
14
12
10
8
16
15
14
13
12
6
4
2
0
-2
11
2V 10 mA
2V 10 mA
-4
-6
2.7V 10 mA
2.7V 10 mA
10
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 19. IIP3 vs. Bias over Frequency[1]
.
Figure 20. P1dB vs. Bias over Frequency[1]
.
Notes:
1. Measurements at 2 GHz were made on a
requirements. Measurements taken above
and below 2 GHz was made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
6
ATF-551M4 Typical Performance Curves, continued
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
25
24
23
22
21
20
19
-40°C
25°C
85°C
-40°C
25°C
85°C
-40°C
25°C
85°C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1]
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[2]
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1]
.
.
.
20
15
10
5
16
15
14
13
12
0
-40°C
25°C
85°C
-40°C
25°C
85°C
-5
11
10
-10
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1]
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA[1]
.
.
Notes:
1. Measurements at 2 GHz were made on a
requirements. Measurements taken above
and below 2 GHz was made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
7
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.954
0.906
0.896
0.833
0.790
0.781
0.739
0.710
0.683
0.679
0.680
0.681
0.683
0.690
0.687
0.691
0.696
0.713
0.747
0.759
0.808
0.828
0.870
-6.0
20.41
19.95
19.35
19.18
18.15
17.22
17.00
15.84
14.74
12.75
11.03
9.65
10.479
9.946
9.280
9.103
8.080
7.260
7.078
6.197
5.459
4.341
3.559
3.036
2.638
2.353
2.122
1.932
1.775
1.636
1.501
1.384
1.255
1.122
0.999
0.887
175.9
158.2
144.2
141.0
125.6
114.9
112.5
101.1
91.2
0.007
0.031
0.052
0.056
0.075
0.085
0.087
0.095
0.099
0.104
0.105
0.107
0.107
0.110
0.113
0.117
0.122
0.129
0.135
0.143
0.149
0.153
0.157
0.159
86.3
71.6
60.8
58.3
46.8
39.0
37.3
29.8
23.7
14.8
8.6
0.803
0.758
0.710
0.692
0.611
0.547
0.532
0.463
0.404
0.318
0.263
0.220
0.199
0.185
0.181
0.185
0.196
0.209
0.206
0.211
0.237
0.269
0.322
0.383
-3.3
31.75
25.06
22.52
22.11
20.32
19.32
19.10
18.14
17.41
16.21
15.30
14.53
13.92
13.30
11.27
9.97
0.5
-29.1
-50.7
-55.7
-79.5
-96.5
-100.4
-118.5
-134.4
-160.0
-179.8
166.5
154.0
143.7
132.7
119.7
106.5
92.6
-15.6
-27.4
-30.2
-42.3
-50.4
-52.3
-60.6
-67.6
-79.6
-91.2
-99.5
-111.0
-123.4
-137.7
-151.1
-163.5
-174.4
171.4
151.2
131.8
113.3
95.4
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
74.5
5.0
60.3
6.0
48.5
5.0
7.0
8.43
37.2
2.1
8.0
7.43
26.4
-0.3
9.0
6.53
15.7
-2.6
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
5.72
4.5
-5.4
4.98
-6.4
-8.4
9.14
4.28
-17.7
-28.6
-40.4
-51.8
-62.4
-72.7
-82.6
-12.3
-16.2
-21.8
-27.4
-33.3
-39.2
-45.2
8.44
81.8
3.53
7.80
67.4
2.82
7.62
55.5
1.97
6.73
45.4
1.00
6.90
37.3
-0.01
-1.04
6.20
30.9
80.1
7.47
Typical Noise Parameters, VDS = 2V, IDS = 10 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.24
0.24
0.28
0.45
0.39
0.47
0.55
0.61
0.74
0.89
0.90
1.03
1.13
1.27
1.53
0.62
0.56
0.52
0.47
0.47
0.42
0.35
0.32
0.33
0.36
0.37
0.38
0.44
0.48
0.46
-4.3
0.14
0.13
0.12
0.11
0.11
0.11
0.09
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.17
23.50
21.66
21.61
18.04
17.88
16.76
15.66
14.10
12.74
11.83
11.63
10.71
9.99
MSG
8.8
13.5
MAG
MSG
38.6
42.9
2
|S
|
21
52.8
74.0
-10
105.4
144.0
164.3
166.1
-170.9
-157.2
-142.4
-126.0
0
5
10
FREQUENCY (GHz)
15
20
Figure 26. MSG/MAG and |S21|2 vs.
Frequency at 2V, 10 mA.
9.36
8.46
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
8
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.947
0.892
0.880
0.812
0.768
0.758
0.718
0.692
0.671
0.670
0.671
0.674
0.676
0.684
0.682
0.686
0.691
0.708
0.744
0.756
0.805
0.825
0.870
-6.6
21.93
21.41
20.67
20.46
19.26
18.23
17.98
16.73
15.55
13.47
11.70
10.30
9.06
12.489
11.757
10.804
10.547
9.186
8.153
7.923
6.859
5.991
4.716
3.845
3.273
2.838
2.528
2.276
2.072
1.903
1.753
1.609
1.483
1.347
1.201
1.073
0.954
175.5
156.7
142.0
138.6
123.0
112.3
109.9
98.9
0.006
0.029
0.048
0.052
0.067
0.076
0.077
0.084
0.088
0.092
0.095
0.098
0.101
0.105
0.111
0.117
0.124
0.132
0.140
0.148
0.155
0.158
0.161
0.163
86.2
70.9
59.7
57.1
46.0
38.7
37.2
30.5
25.3
18.0
13.1
10.5
8.2
0.765
0.715
0.659
0.641
0.555
0.489
0.474
0.407
0.352
0.272
0.222
0.181
0.164
0.152
0.150
0.156
0.170
0.183
0.181
0.188
0.217
0.253
0.310
0.373
-3.7
33.18
26.08
23.52
23.07
21.37
20.31
20.12
19.12
18.33
17.10
16.07
15.24
14.49
12.66
11.51
10.35
9.57
0.5
-31.6
-54.7
-60.1
-84.9
-102.1
-106.1
-124.1
-139.7
-164.5
176.6
163.5
151.5
141.6
130.9
118.0
105.1
91.4
-17.0
-29.6
-32.5
-45.0
-53.1
-55.0
-63.2
-70.2
-82.3
-94.5
-103.2
-115.4
-128.5
-143.3
-156.9
-169.0
-179.3
165.9
145.0
125.0
106.8
89.4
0.9
1.0
1.5
1.9
2.0
2.5
3.0
89.3
4.0
73.3
5.0
59.7
6.0
48.3
7.0
37.4
8.0
8.06
27.0
6.1
9.0
7.14
16.5
3.7
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.33
5.6
0.6
5.59
-5.0
-3.1
4.88
-16.1
-26.9
-38.5
-49.7
-60.2
-70.4
-80.1
-7.6
8.87
80.9
4.13
-12.3
-18.6
-24.9
-31.2
-37.5
-43.8
8.27
66.5
3.42
8.14
54.9
2.59
7.23
45.0
1.59
7.38
37.0
0.61
6.61
30.7
-0.41
74.9
7.67
Typical Noise Parameters, VDS = 2V, IDS = 15 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.21
0.21
0.27
0.42
0.37
0.44
0.52
0.57
0.71
0.85
0.86
0.97
1.08
1.22
1.44
0.61
0.55
0.50
0.46
0.43
0.39
0.32
0.28
0.30
0.35
0.35
0.38
0.43
0.47
0.46
-6.1
0.12
0.12
0.11
0.10
0.10
0.10
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.10
0.17
24.12
22.18
22.12
18.61
18.52
17.34
16.21
14.65
13.27
12.38
12.19
11.24
10.49
9.84
MSG
7.0
11.4
MAG
MSG
38.1
42.7
2
|S
|
21
52.9
74.4
-10
108.3
149.5
170.0
171.7
-165.9
-152.1
-138.1
-122.5
0
5
10
FREQUENCY (GHz)
15
20
Figure 27. MSG/MAG and |S21|2 vs.
Frequency at 2V, 15 mA.
8.96
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
9
ATF-551M4 Typical Scattering Parameters, VDS = 2V, IDS = 20 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.994
0.942
0.882
0.869
0.798
0.753
0.744
0.706
0.681
0.663
0.664
0.666
0.670
0.673
0.681
0.678
0.682
0.688
0.706
0.743
0.753
0.804
0.824
0.869
-6.9
22.85
22.27
21.44
21.21
19.90
18.79
18.53
17.22
16.01
13.88
12.09
10.68
9.43
13.876
12.985
11.806
11.491
9.881
8.704
8.443
7.262
6.314
4.943
4.021
3.418
2.962
2.637
2.373
2.158
1.982
1.826
1.675
1.542
1.400
1.249
1.116
0.994
175.3
155.7
140.5
137.1
121.3
110.7
108.4
97.5
0.006
0.027
0.045
0.048
0.062
0.070
0.071
0.077
0.081
0.085
0.089
0.093
0.097
0.103
0.109
0.117
0.125
0.133
0.142
0.150
0.157
0.160
0.163
0.165
85.6
70.4
59.0
56.5
45.7
38.9
37.4
31.3
26.7
20.3
16.2
14.1
12.0
10.0
7.4
0.740
0.687
0.627
0.608
0.520
0.455
0.441
0.376
0.323
0.248
0.201
0.162
0.144
0.133
0.131
0.139
0.154
0.168
0.169
0.182
0.212
0.250
0.306
0.367
-3.9
33.64
26.82
24.19
23.79
22.02
20.95
20.75
19.75
18.92
17.65
16.55
15.65
14.85
12.78
11.65
10.56
9.80
0.5
-33.3
-57.3
-62.8
-88.1
-105.5
-109.5
-127.4
-142.7
-167.0
174.6
161.9
150.1
140.4
129.8
117.1
104.3
90.6
-17.8
-30.9
-33.8
-46.4
-54.4
-56.3
-64.3
-71.0
-82.9
-95.2
-103.7
-116.4
-130.0
-145.9
-160.3
-172.7
176.9
161.6
139.6
121.2
103.8
87.0
0.9
1.0
1.5
1.9
2.0
2.5
3.0
88.2
4.0
72.5
5.0
59.3
6.0
48.1
7.0
37.3
8.0
8.42
27.1
9.0
7.51
16.8
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.68
6.0
3.7
5.94
-4.6
-0.2
5.23
-15.6
-26.3
-38.0
-48.9
-59.3
-69.4
-78.9
-5.2
9.11
80.3
4.48
-10.3
-17.0
-23.6
-30.1
-36.5
-43.0
8.56
65.9
3.76
8.46
54.4
2.92
7.48
44.7
1.93
7.76
36.7
0.95
6.93
30.6
-0.05
73.0
7.80
Typical Noise Parameters, VDS = 2V, IDS = 20 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.19
0.20
0.25
0.41
0.36
0.43
0.51
0.58
0.70
0.85
0.86
0.94
1.07
1.20
1.43
0.59
0.54
0.48
0.43
0.41
0.37
0.29
0.26
0.29
0.34
0.35
0.37
0.42
0.48
0.46
-7.0
0.11
0.11
0.10
0.09
0.09
0.09
0.08
0.07
0.05
0.05
0.05
0.06
0.08
0.10
0.17
23.50
21.66
21.61
18.04
17.88
16.76
15.66
14.10
12.74
11.83
11.63
10.71
9.99
MSG
6.3
10.1
MAG
MSG
38.7
43.1
2
|S
|
21
53.4
76.3
-10
112.7
154.0
173.6
175.9
-162.3
-148.2
-135.2
-119.5
0
5
10
FREQUENCY (GHz)
15
20
Figure 28. MSG/MAG and |S21|2 vs.
Frequency at 2V, 20 mA.
9.36
8.46
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
10
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.955
0.907
0.896
0.833
0.789
0.779
0.737
0.707
0.679
0.674
0.675
0.676
0.679
0.686
0.684
0.688
0.693
0.710
0.743
0.760
0.805
0.830
0.872
-5.9
20.55
20.11
19.52
19.36
18.34
17.43
17.21
16.07
14.98
13.01
11.30
9.93
10.656
10.129
9.466
9.292
8.265
7.439
7.255
6.361
5.610
4.471
3.673
3.136
2.728
2.435
2.198
2.002
1.841
1.696
1.559
1.443
1.314
1.177
1.051
0.935
175.9
158.4
144.6
141.4
126.1
115.4
113.0
101.7
91.8
0.006
0.028
0.046
0.050
0.067
0.076
0.078
0.085
0.089
0.093
0.094
0.095
0.096
0.099
0.102
0.107
0.113
0.121
0.129
0.139
0.147
0.153
0.158
0.163
86.3
72.0
61.3
58.8
47.6
40.0
38.4
31.0
25.1
16.6
10.9
8.1
0.825
0.782
0.735
0.717
0.639
0.577
0.562
0.495
0.439
0.357
0.303
0.264
0.244
0.230
0.222
0.222
0.230
0.239
0.232
0.222
0.232
0.251
0.293
0.353
-3.0
32.49
25.58
23.13
22.69
20.91
19.91
19.69
18.74
18.00
16.82
15.92
15.19
14.54
12.94
11.58
10.44
9.69
0.5
-28.7
-50.0
-55.0
-78.6
-95.5
-99.4
-117.4
-133.4
-159.1
-178.9
167.3
154.9
144.5
133.5
120.8
107.5
93.7
-14.0
-24.5
-27.0
-37.6
-44.6
-46.2
-53.1
-58.8
-68.3
-77.6
-83.7
-93.5
-104.1
-116.6
-129.0
-140.8
-151.9
-164.6
176.6
155.6
134.3
112.0
92.7
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
75.0
5.0
60.8
6.0
49.1
7.0
8.72
37.7
5.9
8.0
7.73
27.0
4.3
9.0
6.84
16.2
2.9
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.03
5.1
0.7
5.30
-5.9
-1.7
-5.2
-8.9
-14.3
-20.2
-26.2
-32.5
-39.1
4.59
-17.2
-28.2
-39.8
-51.5
-62.2
-72.8
-83.1
9.02
82.7
3.86
8.47
68.6
3.19
8.42
56.5
2.37
7.69
46.2
1.42
8.26
38.1
0.43
8.07
31.5
-0.58
7.59
Typical Noise Parameters, VDS = 2.7V, IDS = 10 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.26
0.27
0.30
0.46
0.41
0.47
0.55
0.61
0.74
0.88
0.90
1.00
1.12
1.25
1.46
0.64
0.57
0.54
0.49
0.48
0.44
0.36
0.32
0.32
0.35
0.35
0.37
0.41
0.46
0.46
-4.4
0.14
0.13
0.13
0.11
0.12
0.11
0.10
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.15
23.79
21.80
21.60
18.06
17.92
16.79
15.70
14.24
12.86
12.01
11.82
10.93
10.24
9.66
MSG
7.5
11.1
MAG
MSG
36.6
40.4
2
|S
|
21
50.3
69.5
-10
101.3
139.5
161.5
163.9
-173.6
-158.2
-143.0
-127.2
0
5
10
FREQUENCY (GHz)
15
20
Figure 29. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 10 mA.
8.85
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
11
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.949
0.894
0.882
0.814
0.768
0.758
0.718
0.691
0.668
0.667
0.668
0.671
0.673
0.682
0.677
0.684
0.690
0.707
0.744
0.750
0.806
0.824
0.872
-6.5
21.98
21.47
20.75
20.55
19.37
18.34
18.10
16.86
15.70
13.64
11.88
10.49
9.26
12.559
11.839
10.905
10.650
9.298
8.265
8.034
6.966
6.095
4.806
3.928
3.345
2.904
2.591
2.335
2.128
1.956
1.804
1.656
1.528
1.389
1.242
1.112
0.991
175.6
156.9
142.3
138.9
123.4
112.7
110.3
99.3
0.006
0.026
0.043
0.047
0.061
0.068
0.070
0.076
0.079
0.083
0.085
0.088
0.091
0.095
0.101
0.107
0.115
0.124
0.133
0.143
0.151
0.156
0.162
0.166
86.4
71.0
60.1
57.5
46.6
39.5
38.0
31.4
26.3
19.4
15.0
13.1
11.4
10.0
8.4
0.793
0.745
0.691
0.673
0.589
0.526
0.511
0.447
0.393
0.318
0.268
0.230
0.212
0.198
0.190
0.190
0.198
0.210
0.205
0.200
0.212
0.236
0.282
0.337
-3.2
33.21
26.58
24.04
23.55
21.83
20.85
20.60
19.62
18.87
17.63
16.65
15.80
15.04
12.89
11.88
10.70
10.06
9.46
0.5
-31.2
-54.0
-59.4
-84.0
-101.1
-105.1
-123.1
-138.7
-163.5
177.5
164.3
152.2
142.3
131.6
118.5
105.8
91.7
-15.2
-26.4
-28.9
-39.7
-46.6
-48.1
-54.6
-59.9
-68.8
-77.7
-83.3
-93.0
-103.4
-116.2
-129.6
-142.6
-154.2
-167.8
172.5
150.9
129.7
107.9
89.7
0.9
1.0
1.5
1.9
2.0
2.5
3.0
89.7
4.0
73.6
5.0
59.9
6.0
48.5
7.0
37.5
8.0
8.27
27.0
9.0
7.37
16.4
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.56
5.4
5.6
5.83
-5.3
2.6
5.12
-16.7
-27.5
-39.4
-50.6
-61.2
-71.5
-81.5
-1.7
81.2
4.38
-6.1
8.93
66.4
3.68
-12.3
-18.7
-25.1
-31.6
-38.2
9.10
55.1
2.85
7.85
45.2
1.88
9.01
37.1
0.92
8.37
31.0
-0.08
7.76
Typical Noise Parameters, VDS = 2.7V, IDS = 15 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.18
0.24
0.38
0.33
0.42
0.5
0.61
0.56
0.5
-6.0
0.12
0.12
0.11
0.1
24.49
22.38
22.32
18.78
18.65
17.47
16.37
14.83
13.4
6.8
10.7
MAG
MSG
0.45
0.43
0.39
0.31
0.28
0.29
0.33
0.34
0.36
0.41
0.46
0.44
36.9
2
41.9
0.1
|S |
21
50.9
0.1
73.0
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.1
-10
0.55
0.66
0.83
0.84
0.95
1.06
1.18
1.43
107.0
146.6
168.7
170.7
-166.9
-152.3
-138.1
-122.5
0
5
10
FREQUENCY (GHz)
15
20
12.54
12.36
11.44
10.69
10.12
9.21
Figure 30. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 15 mA.
0.16
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
12
ATF-551M4 Typical Scattering Parameters, VDS = 2.7V, IDS = 20 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.943
0.883
0.87
-6.8
22.92
22.35
21.53
21.30
20.00
18.91
18.65
17.35
16.14
14.02
12.25
10.84
9.61
13.988
13.103
11.932
11.616
10.004
8.822
8.557
7.367
6.411
5.026
4.095
3.483
3.022
2.695
2.429
2.213
2.034
1.876
1.722
1.59
175.4
155.9
140.7
137.3
121.6
111.0
108.6
97.8
0.005
0.024
0.04
86.4
70.6
59.4
56.9
46.2
39.6
38.2
32.3
27.8
22.0
18.6
17.4
16.1
14.8
13.0
9.9
0.772
0.72
-3.4
34.47
27.37
24.75
24.32
22.52
21.46
21.26
20.28
19.50
18.20
17.15
16.23
14.69
13.08
12.08
11.08
10.44
9.85
0.5
-33.0
-56.9
-62.4
-87.6
-104.9
-108.8
-126.7
-142.1
-166.3
175.2
162.6
150.9
141.2
130.8
118.1
105.4
91.4
-15.7
-27.1
-29.6
-40.2
-46.7
-48.1
-54.2
-59.0
-67.2
-75.7
-80.7
-90.4
-100.6
-113.5
-127.2
-140.4
-152.2
-165.9
173.7
151.1
129.5
107.3
88.8
0.9
0.662
0.643
0.557
0.494
0.48
1.0
0.043
0.056
0.063
0.064
0.069
0.072
0.076
0.079
0.083
0.087
0.093
0.099
0.107
0.116
0.126
0.136
0.146
0.154
0.159
0.165
0.168
1.5
0.798
0.752
0.743
0.704
0.68
1.9
2.0
2.5
0.417
0.367
0.297
0.251
0.216
0.199
0.185
0.177
0.178
0.186
0.198
0.193
0.188
0.2
3.0
88.4
4.0
0.66
72.8
5.0
0.662
0.664
0.667
0.67
59.5
6.0
48.4
7.0
37.6
8.0
8.61
27.3
9.0
0.679
0.677
0.683
0.688
0.705
0.741
0.75
7.71
16.9
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.90
6.0
6.17
-4.6
6.4
5.46
-15.8
-26.5
-38.3
-49.5
-60.1
-70.3
-80.2
1.8
80.9
4.72
-3.2
9.37
66.5
4.03
-9.8
9.78
55.0
3.19
1.444
1.291
1.156
1.032
-16.5
-23.2
-29.8
-36.6
8.35
0.803
0.823
0.872
45.1
2.22
0.224
0.269
0.325
9.10
37.2
1.26
8.45
31.0
0.27
7.88
Typical Noise Parameters, VDS = 2.7V, IDS = 20 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.18
0.23
0.39
0.36
0.43
0.51
0.56
0.68
0.83
0.85
0.95
1.06
1.19
1.41
0.61
0.55
0.49
0.43
0.42
0.37
0.29
0.26
0.28
0.33
0.33
0.37
0.41
0.47
0.46
-6.7
0.12
0.11
0.10
0.09
0.09
0.09
0.08
0.07
0.05
0.05
0.05
0.06
0.08
0.10
0.17
24.89
22.72
22.68
19.18
18.98
17.83
16.69
15.19
13.79
12.91
12.73
11.80
11.06
10.47
9.59
5.9
9.9
MAG
MSG
37.8
2
41.6
|S |
21
51.7
73.6
-10
110.7
152.8
172.9
175.6
-162.4
-148.8
-135.5
-119.2
0
5
10
FREQUENCY (GHz)
15
20
Figure 31. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 20 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
13
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 10 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.996
0.957
0.909
0.899
0.836
0.792
0.782
0.740
0.709
0.680
0.675
0.675
0.676
0.678
0.686
0.682
0.688
0.694
0.711
0.746
0.753
0.807
0.826
0.874
-5.9
20.49
20.05
19.48
19.32
18.32
17.41
17.20
16.07
14.99
13.03
11.33
9.96
10.578
10.059
9.420
9.246
8.241
7.424
7.241
6.360
5.616
4.481
3.684
3.146
2.738
2.447
2.209
2.015
1.855
1.711
1.571
1.452
1.320
1.183
1.057
0.941
176.0
158.5
144.8
141.6
126.3
115.7
113.2
101.9
91.9
0.006
0.027
0.045
0.049
0.065
0.074
0.075
0.082
0.086
0.090
0.091
0.092
0.093
0.095
0.099
0.104
0.110
0.118
0.127
0.137
0.146
0.152
0.159
0.164
86.1
72.0
61.5
59.1
47.9
40.3
38.6
31.3
25.3
16.9
11.3
8.7
0.835
0.792
0.747
0.730
0.653
0.593
0.578
0.513
0.458
0.378
0.325
0.287
0.267
0.252
0.242
0.241
0.247
0.256
0.250
0.240
0.246
0.260
0.297
0.349
-2.8
32.46
25.71
23.21
22.76
21.03
20.01
19.85
18.90
18.15
16.97
16.07
15.34
14.69
12.90
11.73
10.56
9.88
0.5
-28.4
-49.6
-54.6
-78.1
-94.9
-98.8
-116.8
-132.8
-158.5
-178.4
167.8
155.1
144.9
133.8
120.5
107.5
93.3
-13.4
-23.5
-25.9
-36.1
-42.7
-44.2
-50.7
-56.0
-64.9
-73.5
-79.1
-88.4
-98.6
-110.5
-122.9
-135.1
-146.5
-159.0
-176.5
163.0
142.0
119.0
98.9
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
75.1
5.0
60.9
6.0
49.1
7.0
8.75
37.6
6.6
8.0
7.77
26.8
5.4
9.0
6.88
16.0
4.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.09
4.7
2.1
5.37
-6.3
0.0
4.67
-17.8
-28.8
-40.8
-52.4
-63.1
-73.7
-84.1
-3.4
-6.9
-12.6
-18.5
-24.5
-30.8
-37.5
9.26
82.4
3.92
8.76
67.5
3.24
8.90
55.9
2.41
7.74
45.8
1.46
8.91
37.6
0.48
8.23
31.3
-0.53
7.59
Typical Noise Parameters, VDS = 3V, IDS = 10 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.23
0.24
0.26
0.43
0.38
0.43
0.51
0.59
0.70
0.85
0.86
0.98
1.09
1.23
1.45
0.65
0.58
0.54
0.50
0.48
0.44
0.36
0.31
0.32
0.35
0.35
0.36
0.41
0.45
0.44
-4.3
0.14
0.13
0.13
0.11
0.12
0.11
0.10
0.08
0.06
0.05
0.05
0.06
0.07
0.09
0.15
23.81
21.82
21.62
18.05
17.96
16.84
15.76
14.23
12.94
12.04
11.85
10.99
10.29
9.71
7.4
10.7
MAG
MSG
36.2
2
40.4
|S
|
21
49.8
69.2
-10
99.4
0
5
10
FREQUENCY (GHz)
15
20
139.3
160.3
162.3
-173.7
-158.6
-143.7
-126.8
Figure 32. MSG/MAG and |S21|2 vs.
Frequency at 3V, 10 mA.
8.88
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
14
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 15 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.949
0.894
0.882
0.813
0.768
0.758
0.717
0.690
0.668
0.666
0.668
0.670
0.672
0.681
0.678
0.684
0.690
0.707
0.744
0.751
0.807
0.824
0.874
-6.5
22.02
21.51
20.79
20.59
19.41
18.38
18.14
16.90
15.74
13.68
11.93
10.53
9.31
12.623
11.900
10.958
10.701
9.341
8.301
8.068
6.996
6.120
4.829
3.947
3.363
2.921
2.607
2.351
2.142
1.970
1.817
1.667
1.540
1.401
1.254
1.123
1.002
175.6
156.9
142.3
138.9
123.3
112.7
110.3
99.2
0.005
0.025
0.041
0.045
0.059
0.066
0.067
0.073
0.076
0.080
0.082
0.084
0.087
0.092
0.098
0.104
0.113
0.122
0.132
0.142
0.151
0.157
0.163
0.167
86.0
71.0
60.1
57.6
46.7
39.7
38.1
31.6
26.7
20.0
15.8
14.2
12.9
11.8
10.4
7.8
0.802
0.754
0.700
0.682
0.599
0.537
0.522
0.459
0.407
0.334
0.286
0.250
0.232
0.218
0.209
0.209
0.215
0.226
0.221
0.211
0.218
0.236
0.277
0.330
-3.1
34.02
26.78
24.27
23.76
22.00
21.00
20.81
19.82
19.06
17.81
16.82
16.02
14.96
12.99
12.01
10.90
10.28
9.70
0.5
-31.2
-54.1
-59.4
-84.0
-101.2
-105.1
-123.1
-138.7
-163.5
177.5
164.4
152.3
142.4
131.7
118.6
105.8
91.8
-14.6
-25.4
-27.8
-38.1
-44.5
-45.9
-52.0
-56.9
-65.0
-73.3
-78.4
-87.6
-97.7
-110.0
-122.9
-135.4
-147.1
-160.3
-179.5
159.7
137.8
114.5
95.0
0.9
1.0
1.5
1.9
2.0
2.5
3.0
89.7
4.0
73.6
5.0
59.9
6.0
48.5
7.0
37.5
8.0
8.32
27.0
9.0
7.43
16.4
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.62
5.3
5.89
-5.5
4.9
5.19
-16.8
-27.6
-39.5
-50.7
-61.4
-71.9
-82.0
0.7
81.3
4.44
-3.7
9.23
66.6
3.75
-10.0
-16.4
-22.8
-29.5
-36.2
9.62
55.2
2.93
8.26
45.3
1.97
9.02
37.3
1.01
8.38
31.1
0.02
7.78
Typical Noise Parameters, VDS = 3V, IDS = 15 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.18
0.19
0.23
0.39
0.35
0.42
0.49
0.56
0.66
0.83
0.84
0.94
1.05
1.19
1.40
0.63
0.56
0.51
0.46
0.44
0.39
0.31
0.27
0.29
0.33
0.33
0.35
0.40
0.46
0.44
-6.3
0.12
0.12
0.11
0.10
0.10
0.10
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.09
0.16
24.41
22.45
22.29
18.75
18.61
17.46
16.42
14.80
13.48
12.58
12.38
11.49
10.77
10.23
9.32
6.8
10.0
MAG
MSG
36.5
2
40.8
|S
|
21
50.1
72.5
-10
104.4
146.9
167.4
169.0
-166.9
-152.7
-138.6
-121.9
0
5
10
FREQUENCY (GHz)
15
20
Figure 33. MSG/MAG and |S21|2 vs.
Frequency at 3V, 15 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
15
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 20 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.995
0.943
0.883
0.870
0.798
0.752
0.743
0.704
0.679
0.660
0.662
0.664
0.667
0.670
0.679
0.677
0.683
0.689
0.705
0.742
0.751
0.806
0.826
0.874
-6.8
22.91
22.35
21.53
21.30
20.00
18.91
18.64
17.35
16.14
14.03
12.25
10.85
9.62
13.987
13.101
11.932
11.614
10.004
8.820
8.555
7.368
6.412
5.028
4.099
3.488
3.027
2.701
2.435
2.219
2.040
1.881
1.727
1.594
1.451
1.298
1.164
1.039
175.4
155.8
140.7
137.2
121.5
111.0
108.6
97.7
0.005
0.024
0.039
0.042
0.054
0.061
0.062
0.067
0.070
0.074
0.076
0.080
0.084
0.090
0.096
0.104
0.114
0.124
0.134
0.145
0.153
0.159
0.165
0.170
86.1
70.5
59.5
56.9
46.3
39.7
38.3
32.4
28.1
22.5
19.2
18.3
17.2
16.3
14.6
11.7
8.4
0.781
0.730
0.672
0.654
0.569
0.506
0.493
0.431
0.383
0.314
0.270
0.237
0.220
0.207
0.198
0.198
0.205
0.216
0.210
0.199
0.207
0.225
0.265
0.320
-3.3
34.47
27.37
24.86
24.42
22.68
21.60
21.40
20.41
19.62
18.32
17.32
16.39
14.66
13.18
12.20
11.21
10.64
10.10
9.62
0.5
-33.0
-56.9
-62.4
-87.6
-104.9
-108.9
-126.7
-142.1
-166.3
175.3
162.6
150.9
141.3
130.9
118.1
105.4
91.4
-15.2
-26.1
-28.5
-38.5
-44.6
-46.0
-51.6
-56.0
-63.5
-71.5
-76.2
-85.2
-95.2
-107.6
-120.6
-133.4
-145.2
-158.4
-178.0
160.3
138.1
114.0
94.1
0.9
1.0
1.5
1.9
2.0
2.5
3.0
88.4
4.0
72.7
5.0
59.4
6.0
48.3
7.0
37.5
8.0
8.63
27.2
9.0
7.73
16.8
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
6.92
5.9
6.19
-4.8
5.49
-16.0
-26.8
-38.6
-49.8
-60.4
-70.8
-80.8
3.8
80.9
4.75
-1.0
66.4
4.05
-7.7
10.41
8.80
55.0
3.23
-14.4
-21.1
-27.9
-34.9
45.1
2.27
9.12
37.2
1.32
8.48
31.1
0.33
7.86
Typical Noise Parameters, VDS = 3V, IDS = 20 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.17
0.18
0.24
0.39
0.36
0.42
0.50
0.57
0.68
0.83
0.85
0.93
1.05
1.19
1.39
0.62
0.55
0.50
0.43
0.41
0.37
0.29
0.25
0.28
0.32
0.33
0.36
0.41
0.46
0.45
-6.2
0.12
0.11
0.10
0.10
0.09
0.09
0.08
0.07
0.06
0.05
0.05
0.06
0.08
0.10
0.17
24.92
22.79
22.59
19.22
19.00
17.83
16.72
15.18
13.80
12.93
12.77
11.84
11.09
10.53
9.64
6.0
MAG
9.5
MSG
MAG
MSG
37.5
2
41.2
|S
|
21
50.9
73.6
-10
109.4
151.6
172.5
175.6
-162.7
-149.1
-135.5
-119.4
0
5
10
FREQUENCY (GHz)
15
20
Figure 34. MSG/MAG and |S21|2 vs.
Frequency at 3V, 20 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
16
ATF-551M4 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA
Freq.
GHz
S11
S21
Mag.
S12
S22
MSG/MAG
dB
Mag.
Ang.
dB
Ang.
Mag.
Ang.
Mag.
Ang.
0.1
0.994
0.936
0.870
0.856
0.781
0.736
0.726
0.690
0.668
0.653
0.656
0.659
0.663
0.666
0.676
0.674
0.680
0.688
0.705
0.743
0.751
0.806
0.826
0.875
-7.4
23.90
23.25
22.32
22.05
20.61
19.44
19.15
17.79
16.54
14.38
12.58
11.17
9.93
15.662
14.544
13.058
12.665
10.732
9.374
9.072
7.753
6.713
5.234
4.258
3.618
3.138
2.798
2.522
2.296
2.109
1.944
1.784
1.648
1.502
1.343
1.208
1.080
175.0
154.5
138.7
135.2
119.4
108.9
106.6
96.0
0.005
0.022
0.035
0.038
0.048
0.054
0.055
0.059
0.062
0.066
0.069
0.074
0.079
0.086
0.094
0.103
0.113
0.124
0.135
0.147
0.156
0.162
0.168
0.174
86.1
69.8
58.7
56.2
46.0
40.1
38.8
33.7
30.3
26.1
23.8
23.6
22.9
21.9
20.1
16.9
13.1
8.0
0.760
0.705
0.644
0.624
0.539
0.480
0.467
0.410
0.367
0.307
0.268
0.238
0.224
0.211
0.203
0.202
0.208
0.219
0.213
0.200
0.203
0.218
0.254
0.306
-3.4
34.96
28.20
25.72
25.23
23.49
22.40
22.17
21.19
20.35
18.99
17.90
16.89
14.61
13.35
12.55
11.58
11.01
10.62
10.38
10.50
9.84
0.5
-35.3
-60.4
-66.1
-92.0
-109.4
-113.3
-131.0
-146.1
-169.6
172.7
160.5
149.0
139.6
129.3
116.6
104.1
90.3
-15.4
-26.2
-28.5
-37.7
-43.1
-44.2
-49.0
-52.7
-59.2
-66.7
-70.9
-79.8
-89.5
-101.5
-114.5
-127.3
-139.4
-152.3
-170.8
166.8
143.9
118.4
97.4
0.9
1.0
1.5
1.9
2.0
2.5
3.0
86.9
4.0
71.7
5.0
58.7
6.0
47.9
7.0
37.2
8.0
8.94
27.1
9.0
8.03
16.8
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
7.22
5.9
6.48
-4.6
5.77
-15.8
-26.4
-38.0
-49.2
-59.8
-70.1
-80.2
80.1
5.03
3.0
65.8
4.34
-4.1
54.5
3.53
-11.1
-18.1
-25.2
-32.4
44.9
2.56
9.19
37.0
1.64
8.57
31.0
0.67
7.93
Typical Noise Parameters, VDS = 3V, IDS = 30 mA
40
30
20
10
0
Freq
GHz
Fmin
dB
Γopt
Γopt
Rn/50
Ga
Mag.
Ang.
dB
MSG
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.16
0.18
0.24
0.39
0.36
0.45
0.52
0.59
0.71
0.86
0.89
0.99
1.12
1.26
1.50
0.60
0.55
0.47
0.39
0.38
0.33
0.26
0.23
0.28
0.33
0.33
0.37
0.42
0.48
0.46
-6.2
0.11
0.11
0.10
0.09
0.09
0.09
0.08
0.06
0.05
0.05
0.05
0.07
0.09
0.12
0.20
25.60
23.17
23.19
19.73
19.48
18.36
17.20
15.66
14.28
13.39
13.20
12.27
11.50
10.96
10.01
6.4
10.1
MAG
MSG
39.1
2
|S
|
42.7
21
54.2
79.0
-10
119.0
162.1
-179.3
-176.7
-156.1
-143.5
-130.8
-115.1
0
5
10
FREQUENCY (GHz)
15
20
Figure 35. MSG/MAG and |S21|2 vs.
Frequency at 3V, 30 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
17
S and Noise Parameter Measurements source impedance, typically 50Ω,
The position of the reference to an impedance represented by
planes used for the measurement the reflection coefficient Γo. The
of both S and Noise Parameter designer must design a matching
measurements is shown in Figure network that will present Γo to
ohms. Matching to such a high
impedance requires very hi-Q
components in order to minimize
circuit losses. As an example at
900 MHz, when air wound coils
(Q>100)are used for matching
networks, the loss can still be up
to 0.25 dB which will add di-
rectly to the noise figure of the
device. Using muiltilayer molded
inductors with Qs in the 30 to 50
range results in additional loss
over the air wound coil. Losses as
high as 0.5 dB or greater add to
the typical 0.15 dB Fmin of the
device creating an amplifier
36. The reference plane can be
described as being at the center
of both the gate and drain pads.
the device with minimal associ-
ated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to Fmin only
when the device is presented
with Γo. If the reflection coeffi-
cient of the matching network is
other than Γo, then the noise
figure of the device will be
S and noise parameters are
measured with a 50 ohm
microstrip test fixture made with
a 0.010" thickness aluminum
substrate. Both source pads are
connected directly to ground via
a 0.010" thickness metal rib
which provides a very low
inductance path to ground for
both source pads. The inductance
associated with the addition of
printed circuit board plated
through holes and source bypass
capacitors must be added to the
computer circuit simulation to
properly model the effect of
grounding the source leads in a
typical amplifier design.
noise figure of nearly 0.65 dB.
greater than Fmin based on the
following equation.
SMT Assembly
The package can be soldered
using either lead-bearing or lead-
free alloys (higher peak tempera-
tures). Reliable assembly of
surface mount components is a
complex process that involves
many material, process, and
equipment factors, including:
method of heating (e.g. IR or
vapor phase reflow, wave solder-
ing, etc) circuit board material,
conductor thickness and pattern,
type of solder alloy, and the
thermal conductivity and ther-
mal mass of components. Compo-
nents with a low mass, such as
the Minipak 1412 package, will
reach solder reflow temperatures
faster than those with a greater
mass.
NF = Fmin + 4 Rn
|Γs – Γo | 2
Zo (|1 + Γo|2)(1- |Γs|2)
Where Rn/Zo is the normalized
noise resistance, Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs
is the reflection coefficient of the
source impedance actually
Reference
Plane
Source
Pin 3
Drain
Pin 4
presented to the device.
The losses of the matching
Vx
networks are non-zero and they
will also add to the noise figure
of the device creating a higher
amplifier noise figure. The losses
of the matching networks are
related to the Q of the compo-
nents and associated printed
circuit board loss. Γo is typically
fairly low at higher frequencies
and increases as frequency is
lowered. Larger gate width
Source
Pin 1
Gate
Pin 2
Microstrip
Transmission Lines
The recommended leaded solder
time-temperature profile is
Figure 36. Position of the Reference Planes.
shown in Figure 37. This profile
is representative of an IR reflow
type of surface mount assembly
process. After ramping up from
room temperature, the circuit
board with components attached
to it (held in place with solder
paste) passes through one or
more preheat zones. The preheat
zones increase the temperature
of the board and components to
prevent thermal shock and begin
evaporating solvents from the
solder paste. The reflow zone
Noise Parameter Applications
Information
The Fmin values are based on a
set of 16 noise figure measure-
ments made at 16 different
impedances using an ATN NP5
devices will typically have a
lower Γo as compared to nar-
rower gate width devices. Typi-
cally for FETs , the higher Γo
test system. From these measure- usually infers that an impedance
ments, a true Fmin is calculated.
Fmin represents the true mini-
mum noise figure of the device
when the device is presented
with an impedance matching
network that transforms the
much higher than 50Ω is re-
quired for the device to produce
Fmin. At VHF frequencies and
even lower L Band frequencies,
the required impedance can be in
the vicinity of several thousand
18
briefly elevates the temperature
sufficiently to produce a reflow
of the solder.
The recommended lead-free
reflow profile is shown in Fig-
ure 38.
Electronic devices may be
subjected to ESD damage in any
of the following areas:
• Storage & handling
• Inspection
• Assembly & testing
• In-circuit use
The rates of change of tempera-
ture for the ramp-up and cool-
down zones are chosen to be low
enough to not cause deformation
of board or damage to compo-
nents due to thermal shock. The
maximum temperature in the
reflow zone (Tmax) should not
exceed 235°C for leaded solder.
Electrostatic Sensitivity
FETs and RFICs are electrostatic
discharge (ESD) sensitive de-
vices. Agilent devices are manu-
factured using a very robust and
The ATF-551M4 is an ESD Class1
reliable PHEMT process, however, device. Therefore, proper ESD
precautions are recommended
when handling, inspecting,
jected to high-energy electrostatic testing, and assembling these
permanent damage may occur to
these devices if they are sub-
discharges. Electrostatic charges
as high as several thousand volts
(which readily accumulate on the Any user-accessible points in
devices to avoid damage.
These parameters are typical for
a surface mount assembly
process for the ATF-551M4. As a
general guideline, the circuit
board and components should
only be exposed to the minimum
temperatures and times the
necessary to achieve a uniform
reflow of solder.
human body and on test equip-
ment) can discharge without
detection and may result in
failure or degradation in perfor-
mance and reliability.
wireless equipment (e.g. antenna
or battery terminals) provide an
opportunity for ESD damage.
For circuit applications in which
the ATF-551M4 is used as an
input or output stage with close
coupling to an external antenna,
the device should be protected
from high voltage spikes due to
human contact with the antenna.
A good practice, illustrated in
Figure 39, is to place a shunt
inductor or RF choke at the
antenna connection to protect
the receiver and transmitter
circuits. It is often advantageous
to integrate the RF choke into the
design of the diplexer or T/R
switch control circuitry.
250
200
TMAX
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
240
300
TIME (seconds)
Figure 37. Leaded Solder Reflow Profile.
350
300
Peak Temperature
Min. 240°C
Max. 255°C
250
221
Figure 39. In-circuit ESD Protection.
Reflow Time
Min. 60s
Max. 90s
200
150
100
Preheat 130–170°C
Min. 60s
Max. 150s
50
0
0
30
60
90
120 150
180 210
240
270
300
330 360
TIME (seconds)
Figure 38. Lead-free Solder Reflow Profile.
19
from the standpoint of improving
out-of-band rejection.
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
ATF-551M4 Applications
Information
Capacitors C2 and C5 provide a
low impedance in-band RF
Introduction
Agilent Technologies’s
ATF-551M4 is a low noise
Whereas a depletion mode
bypass for the matching net-
works. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
PHEMT pulls maximum drain
current when Vgs=0V, an en-
hancement mode PHEMT pulls
only a small amount of leakage
current when Vgs=0V. Only when
enhancement mode PHEMT
designed for use in low cost
commercial applications in the
VHF through 10 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7V base to emitter
voltage, the ATF-551M4 enhance-
ment mode PHEMT requires a
nominal 0.47V potential between
the gate and source for a nominal
drain current of 10 mA.
improves low frequency stability. Vgs is increased above Vth, the
Capacitors C3 and C6 provide
the RF bypass for resistors R3
and R4. Their value should be
chosen carefully as C3 and C6
also provide a termination for
low frequency mixing products.
These mixing products are as a
result of two or more in-band
signals mixing and producing
third order in-band distortion
products. The low frequency or
difference mixing products are
terminated by C3 and C6. For
best suppression of third order
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 uF in
value. Smaller values of capaci-
tance will not suppress the
generation of the 1.25 MHz
difference signal and as a result
will show up as poorer two tone
IP3 results.
device threshold voltage, will
drain current start to flow. At a
Vds of 2.7V and a nominal Vgs of
0.47V, the drain current Id will be
approximately 10 mA. The data
sheet suggests a minimum and
maximum Vgs over which the
desired amount of drain current
will be achieved. It is also impor-
tant to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differ-
ential between the gate and
source terminals.
Passive Biasing
Passive biasing of the ATF-551M4
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. In the case of a typical
depletion mode FET, the voltage
divider which is normally con-
nected to a negative voltage
source is connected to the gate
through resistor R4. Additional
resistance in the form of R5
(approximately 10KΩ) is added
to provide current limiting for
the gate of enhancement mode
devices such as the ATF-551M4.
This is especially important
when the device is driven to
P1dB or Psat.
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those for
matching a depletion mode device.
The only difference is in the
C4
OUTPUT
C1
INPUT
Q1
L2
Zo
Zo
L1
L4
method of supplying gate bias. S
and Noise Parameters for various
bias conditions are listed in this
data sheet. The circuit shown in
Figure 1 shows a typical LNA
circuit normally used for 900 and
1900 MHz applications. Consult
the Agilent Technologies web site
for application notes covering
specific designs and applications.
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
L3
C2
C3
C5
R3
R4
R5
C6
R1
R2
Vdd
Figure 1. Typical ATF-551M4 LNA with Passive
Biasing.
Bias Networks
One of the major advantages of
the enhancement mode technol-
ogy is that it allows the designer
to be able to dc ground the
source leads and then merely
Resistor R3 is calculated based
on desired Vds, Ids and available
power supply voltage.
20
VDD – Vds
Ids + IBB
An active bias scheme is shown
in Figure 2.
VDD
9
R3 =
(1)
R1 =
(5A)
p
VDD – VB
VB
p
IBB 1 +
(
)
C4
OUTPUT
C1
INPUT
Q1
Zo
VDD is the power supply voltage.
Vds is the device drain to source
voltage.
Zo
Example Circuit
L1
L4
L2
L3
VDD = 3 V
C2
C3
C5
R4
I
ds is the desired drain current.
R5
R6
Vds = 2.7 V
Ids = 10 mA
R4 = 10Ω
VBE = 0.7V
IBB is the current flowing
through the R1/R2 resistor
voltage divider network.
C7
Q2
C6
Vdd
R7
R3
The value of resistors R1 and R2
are calculated with the following
formulas.
R2
R1
Equation (1) calculates the
required voltage at the emitter o
the PNP transistor based o
Figure 2. Typical ATF-551M4 LNA with Active
Biasing.
desired Vds and Ids throug
Vgs
R1 =
(2)
resistor R4 to be 2.8V. Equation
(2) calculates the value of resistor
R3 which determines the drain
current Ids. In the example
R3=18.2Ω. Equation (3) calculates
the voltage required at the junc-
tion of resistors R1 and R2. This
voltage plus the step-up of the
base emitter junction determines
the regulated Vds. Equations (4)
and (5) are solved simultaneously
to determine the value of resistors
R1 and R2. In the example
R1 and R2 provide a constant
voltage source at the base of a
PNP transistor at Q2. The con-
stant voltage at the base of Q2 is
raised by 0.7 volts at the emitter.
The constant emitter voltage plus
the regulated VDD supply are
present across resistor R3.
p
IBB
(Vds – Vgs) R1
Vgs
R2 =
(3)
p
Example Circuit
VDD = 3V
Constant voltage across R3
provides a constant current
Vds = 2.7V
Ids = 10 mA
Vgs = 0.47V
supply for the drain current.
Resistors R1 and R2 are used to
set the desired Vds. The combined
series value of these resistors also
sets the amount of extra current
consumed by the bias network.
The equations that describe the
circuit’s operation are as follows.
Choose IBB to be at least 10X the
maximum expected gate leakage
current. IBB was conservatively
chosen to be 0.5 mA for this
example. Using equations (1), (2),
and (3) the resistors are calcu-
lated as follows
R1=4200Ω and R2 =1800Ω.
R7 is chosen to be 1 kΩ. This
resistor keeps a small amount of
current flowing through Q2 to help
maintain bias stability. R6 is
chosen to be 10 KΩ. This value of
resistance is high enough to limit
Q1 gate current in the presence of
high RF drive levels as experi-
enced when Q1 is driven to the
P1dB gain compression point. C7
provides a low frequency bypass to
keep noise from Q2 effecting the
operation of Q1. C7 is typically
0.1 µF.
R1 = 940Ω
R2 = 4460Ω
R3 = 28.6Ω
VE = Vds + (Ids • R4)
(1)
VDD – VE
R3 =
(2)
(3)
p
Ids
Active Biasing
Active biasing provides a means
of keeping the quiescent bias
point constant over temperature
and constant over lot to lot
VB = VE – VBE
R1
VB =
VDD
(4)
(5)
p
R1 + R2
variations in device dc perfor-
mance. The advantage of the
active biasing of an enhancement
mode PHEMT versus a depletion
mode PHEMT is that a negative
power source is not required. The
techniques of active biasing an
enhancement mode device are
very similar to those used to bias
a bipolar junction transistor.
VDD = IBB (R1 + R2)
Maximum Suggested Gate Current
The maximum suggested gate
current for the ATF-551M4 is
1 mA. Incorporating resistor R5
in the passive bias network or
resistor R6 in the active bias
network safely limits gate current
to 500 µA at P1dB drive levels.
Rearranging equation (4)
provides the following formula
R1 (VDD – VB)
R2 =
(4A)
p
VB
and rearranging equation (5)
provides the follow formula
21
In order to minimize component
count in the passive biased
desired. R5 can be removed if R1
is replaced with a 5.6KΩ resistor
For Further Information
The information presented here is
amplifier circuit, the 3 resistor
bias circuit consisting of R1, R2,
and R5 can be simplified if
and if R2 is replaced with a 27KΩ an introduction to the use of the
resistor. This combination should
limit gate current to a safe level.
ATF-551M4 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies. Consult
the web page or your local Agilent
Technologies sales representative.
ATF-551M4 Die Model
Advanced_Curtice2_Model
MESFETM1
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Crf=0.1 F
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Gscap=2
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Eg=
ATF-551M4 Minipak Model
INSIDE Package
VAR
VAR1
K=5
Var
Egn
TLINP
TL1
TLINP
TL2
Z2=85
Z1=30
Z=Z2/2 Ohm
L=22 mil
K=K
Z=Z2/2 Ohm
L=20 0 mil
K=K
C
A=0.000
F=1 GHz
TanD=0.001
A=0.000
F=1 GHz
TanD=0.001
C1
GATE
SOURCE
C=0.28 pF
L
L
Port
G
Num=1
TLINP
TLINP
Port
L6
L1
TL7
TL3
S2
L=0.147 nH
R=0.001
L=0.234 nH
R=0.001
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
Num=4
C
C2
GaAsFET
FET1
C=0.046 pF
Mode1=MESFETM1
Mode=Nonlinear
DRAIN
SOURCE
L
TLINP
Port
D
Num=3
L7
TL5
L=0.234 nH
R=0.001
L
Port
TLINP
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L4
MSub
S1
TL9
L=0.281 nH
R=0.001
Num=2
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
22
Ordering Information
Part Number
No. of Devices
Container
ATF-551M4-TR1
ATF-551M4-TR2
ATF-551M4-BLK
3000
10,000
100
7” Reel
13” Reel
antistatic bag
MiniPak Package Outline Drawing
Solder Pad Dimensions
1.44 (0.058)
1.40 (0.056)
1.12 (0.045)
1.08 (0.043)
3
2
4
0.82 (0.033)
0.78 (0.031)
1.20 (0.048)
1.16 (0.046)
Vx
0.32 (0.013)
0.28 (0.011)
1
0.00
Top view
-0.07 (-0.003)
-0.03 (-0.001)
0.92 (0.037)
0.88 (0.035)
0.00
-0.07 (-0.003) 0.42 (0.017)
-0.03 (-0.001) 0.38 (0.015)
1.32 (0.053)
1.28 (0.051)
0.70 (0.028)
0.58 (0.023)
Bottom view
Side view
Dimensions are in millimeteres (inches)
23
Device Orientation for Outline 4T, MiniPak 1412
REEL
TOP VIEW
4 mm
END VIEW
CARRIER
TAPE
8 mm
USER
FEED
DIRECTION
Note: Vx represents Package Marking Code.
Device orientation is indicated by package marking.
COVER TAPE
Tape Dimensions
P
P
D
2
P
0
E
F
W
C
B
0
A
1
0
D
1
t
(CARRIER TAPE THICKNESS)
T (COVER TAPE THICKNESS)
t
K
5° MAX.
5° MAX.
0
A
B
0
0
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
A
B
K
P
D
1.40 ± 0.05
1.53 ± 0.05
0.80 ± 0.05
4.00 ± 0.10
0.80 ± 0.05
0.055 ± 0.002
0.064 ± 0.002
0.031 ± 0.002
0.157 ± 0.004
0.031 ± 0.002
0
0
0
BOTTOM HOLE DIAMETER
1
0
PERFORATION
DIAMETER
PITCH
POSITION
D
P
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE WIDTH
THICKNESS
W
8.00 + 0.30 - 0.10 0.315 + 0.012 - 0.004
t
0.254 ± 0.02
0.010 ± 0.0008
1
COVER TAPE
WIDTH
C
5.40 ± 0.10
0.213 ± 0.004
TAPE THICKNESS
T
0.062 ± 0.001
0.0024 ± 0.00004
t
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P
2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of Agilent
contacts and distributors, please go to our web site.
www.agilent.com/semiconductors
E-mail: SemiconductorSupport@agilent.com
Data subject to change.
Copyright © 2002 Agilent Technologies, Inc.
March 6, 2002
5988-4455EN
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