DTA113E [ETC]
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92 ; 晶体管| 50V V（ BR ） CEO | 100MA I（C ） | TO- 92\n
| 型号： | DTA113E |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92
|
| 文件： | 总8页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA114E Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
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PNP SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
V
CEO
1
50
Vdc
2
3
I
C
100
mAdc
CASE 29
TO–92 (TO–226)
STYLE 1
Total Power Dissipation
P
D
(1.)
@ T = 25°C
350
2.81
mW
mW/°C
A
Derate above 25°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
PIN3
COLLECTOR
(OUTPUT)
Thermal Resistance, Junction to
Ambient (surface mounted)
R
357
°C/W
θ
JA
Operating and Storage
Temperature Range
T , T
–55 to
+150
°C
R1
J
stg
PIN2
R2
BASE
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T
L
(INPUT)
260
10
°C
Sec
PIN1
EMITTER
(GROUND)
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
5000/Box
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
Preferred devices are recommended choices for future use
and best overall value.
∞
1.0
2.2
4.7
47
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 2
DTA114E/D
DTA114E Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V = 50 V, I = 0)
I
I
—
—
—
—
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector–Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter–Base Cutoff Current
(V = 6.0 V, I = 0)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
EBO
EB
C
Collector–Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
—
—
—
—
Vdc
Vdc
C
E
(BR)CBO
(2.)
Collector–Emitter Breakdown Voltage
ON CHARACTERISTICS (2.)
DC Current Gain
(I = 2.0 mA, I = 0)
C B
(BR)CEO
DTA114E
h
FE
35
60
80
60
100
140
140
250
250
5.0
15
—
—
—
—
—
—
—
—
—
—
(V = 10 V, I = 5.0 mA)
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
CE
C
80
160
160
3.0
8.0
15
27
140
80
Collector–Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA) DTA144E/DTA114Y
V
—
—
0.25
Vdc
Vdc
CE(sat)
C
E
(I = 10 mA, I = 0.3 mA) DTB113E/DTA143E
C
E
(I = 10 mA, I = 5 mA) DTA123E
C
B
(I = 10 mA, I = 1 mA) DTA114T/DTA143T/
C
B
(I = 10 mA, I = 1 mA) DTA143Z/DTA124E
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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2
DTA114E Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off)
(V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
—
—
Vdc
DTA114T
DTA113T
DTA144E
DTA114Y
DTA143Z
DTB113E
DTA114T
DTA143T
DTA123E
DTA143E
CC
B
L
(V = 5.0 V, V = 0.05 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
CC
B
L
Input Resistor
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
kΩ
13
6.1
1.3
2.9
6.1
6.1
Resistor Ratio
DTA114E/DTA124E/DTA144E
DTA114Y
DTA114T/DTA143T
DTB113E/DTA123E/DTA143E
DTA143Z
R /R
0.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
1
2
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3
DTA114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114E
250
200
1
I /I Ă=Ă10
C B
T Ă=Ă-25°C
A
25°C
150
100
50
75°C
ā0.1
R
θ
= 625°C/W
JA
ā0.01
0
-50
0
50
100
150
20
0
ā40
ā60
ā80
50
ā50
T , AMBIENT TEMPERATURE (°C)
A
I , COLLECTOR CURRENT (mA)
C
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
1000
4
3
V
CE
= 10 V
f = 1 MHz
l = 0 V
E
T = 25°C
A
T Ă=Ă75°C
A
25°C
100
2
1
0
-25°C
10
1
10
100
0
10
20
30
40
I , COLLECTOR CURRENT (mA)
C
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
10
1
100
10
25°C
75°C
V = 0.2 V
O
T Ă=Ă-25°C
A
T Ă=Ă-25°C
A
25°C
75°C
ā0.1
1
ā0.01
V = 5 V
O
ā0.1
ā0.001
0
1
ā2
ā3
ā4
ā5
ā6
ā7
ā8
ā9
10
0
10
ā20
ā30
ā40
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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4
DTA114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTA124E
1000
10
I /I Ă=Ă10
C B
V
CE
= 10 V
T Ă=Ă-25°C
A
25°C
75°C
T Ă=Ă75°C
A
1
25°C
-25°C
100
ā0.1
10
ā0.01
1
10
0
ā20
ā40
ā60
ā80
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
3
2
100
10
1
25°C
75°C
f = 1 MHz
T Ă=Ă-25°C
A
l = 0 V
E
T = 25°C
A
ā0.1
1
0
V = 5 V
O
ā0.01
ā0.001
0
1
ā2
ā3
ā4
ā5
ā6
ā7
ā8
ā9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
10
75°C
1
ā0.1
0
10
ā20
ā30
ā40
ā50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
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5
DTA114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTA144E
1
1000
I /I Ă=Ă10
C B
T Ă=Ă75°C
A
T Ă=Ă-25°C
A
25°C
25°C
-25°C
75°C
100
ā0.1
ā0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
100
T Ă=Ă75°C
A
25°C
f = 1 MHz
l = 0 V
E
0.8
-25°C
10
1
T = 25°C
A
0.6
0.4
ā0.1
ā0.01
0.2
0
V = 5 V
O
ā0.001
0
1
ā2
ā3
ā4
ā5
ā6
ā7
ā8
Ă9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V = 2 V
O
T Ă=Ă-25°C
A
25°C
75°C
10
1
Ă0.1
0
10
ā20
30
ā40
ā50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
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6
DTA114E Series
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114Y
1
180
T Ă=Ă75°C
A
I /I Ă=Ă10
C B
V
CE
= 10 V
160
140
120
100
80
T Ă=Ă-25°C
A
25°C
-25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) versus IC
Figure 18. DC Current Gain
4.5
4
100
10
1
T Ă=Ă75°C
A
f = 1 MHz
l = 0 V
25°C
E
3.5
3
T = 25°C
A
-25°C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
+12 V
10
T Ă=Ă-25°C
A
V = 0.2 V
O
25°C
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
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7
DTA114E Series
PACKAGE DIMENSIONS
TO–92
(TO–226)
CASE 29–11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
C
N
P
R
V
0.105
0.100
---
2.66
2.54
---
SECTION X–X
STYLE 1:
0.115
0.135
2.93
3.43
1
N
PIN 1. EMITTER
2. BASE
3. COLLECTOR
---
---
N
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DTA114E/D
相关型号：
DTA113TAAC2
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATR, 3 PIN
ROHM
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