EDI8F32256C25MNC [ETC]

x32 SRAM Module ; X32 SRAM模块\n
EDI8F32256C25MNC
型号: EDI8F32256C25MNC
厂家: ETC    ETC
描述:

x32 SRAM Module
X32 SRAM模块\n

静态存储器
文件: 总7页 (文件大小:164K)
中文:  中文翻译
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EDI8F32256C  
256Kx32 Static RAM CMOS, High Speed Module  
DESCRIPTION  
FEATURES  
•
256Kx32 bit CMOS Static  
The EDI8F32256C is a high speed 8Mb Static RAM module  
organized as 256K words by 32 bits. This module is constructed  
from eight 256Kx4 Static RAMs in SOJ packages on an epoxy  
laminate (FR4) board.  
•
•
•
Random Access Memory  
• Access Times: 12, 15, 20, and 25ns  
• Individual Byte Selects  
Four chip enables (EØ-E3) are used to independently enable the  
four bytes. Reading or writing can be executed on individual  
bytes or any combination of multiple bytes through proper use of  
selects.  
• Fully Static, No Clocks  
• TTL Compatible I/O  
High Density Package with JEDEC Standard Pinouts  
• 64 Pin ZIP, No. 85  
The EDI8F32256C is offered in 64 pin ZIP/SIMM package which  
enables eight megabits of memory to be placed in less than 1.4  
square inches of board space.  
• 64 Lead Angled SIMM, No. 32  
• 64 Lead SIMM, No. 333  
All inputs and outputs are TTL compatible and operate from a  
single 5V supply. Fully asynchronous circuitry requires no clocks  
or refreshing for operation and provides equal access and cycle  
times for ease of use.  
• Common Data Inputs and Outputs  
Single +5V (±10%) Supply Operation  
The ZIP and SIMM modules contain two pins, PD1 and PD2,  
which are used to identify module memory density in applications  
where alternate modules can be interchanged.  
FIG. 1  
PIN NAMES  
PIN CONFIGURATIONS AND BLOCK DIAGRAM  
AØ-A17  
EØ-E3  
W,  
Address Inputs  
Chip Enables  
Write Enables  
G
Output Enable  
Common Data Input/Output  
Power (+5V±10%)  
Ground  
DQØ-DQ31  
VCC  
VSS  
Aug. 2001 Rev. 13  
ECO #14561  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
1
EDI8F32256C  
ABSOLUTE MAXIMUM RATINGS*  
RECOMMENDED DC OPERATING CONDITIONS  
Voltage on any pin relative to VSS  
Operating Temperature TA (Ambient)  
Commercial  
Industrial  
Storage Temperature, Plastic  
Power Dissipation  
-0.5V to 7.0V  
Parameter  
Sym  
VCC  
VSS  
VIH  
Min  
4.5  
0
2.2  
-0.3  
Typ  
5.0  
0
--  
--  
Max  
5.5  
0
Units  
V
V
V
V
Supply Voltage  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
0°C to +70°C  
-40°C to +85°C  
-55°C to +125°C  
8.0 Watt  
VCC+0.3V  
0.8  
VIL  
Output Current  
20 mA  
*Stress greater than those listed under "Absolute Maximum Ratings" may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions greater than those indicated in the  
operational sections of this specification is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect reliability.  
AC TEST CONDITIONS  
Input Pulse Levels  
VSS to 3.0V  
5ns  
Input Rise and Fall Times  
Input and Output Timing Levels  
Output Load  
1.5V  
1TTL, CL = 30pF  
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)  
DC ELECTRICAL CHARACTERISTICS  
Parameter  
Sym  
Conditions  
Min  
Max  
12-25  
800  
240  
40  
Units  
ns  
mA  
mA  
mA  
Operating Power Supply Current  
Standby (TTL) Power Supply Current  
Full Standby Power Supply Current  
CMOS  
ICC1  
ICC2  
ICC3  
W, E = VIL, II/O = 0mA, Min Cycle  
E ³VIH, VIN £VIL or VIN ³VIH  
E ³ VCC-0.2V  
VIN ³VCC-0.2V or VIN £ 0.2V  
Input Leakage Current  
Output Leakage Current  
Output High Voltage  
Output Low Voltage  
ILI  
ILO  
VOH  
VOL  
VIN = 0V to VCC  
V I/O = 0V to VCC  
IOH = -4.0mA  
--  
--  
2.4  
—
±80  
±20  
—
µA  
µA  
V
IOL = 8.0mA  
0.4  
V
*Typical: TA = 25°C, VCC = 5.0V  
CAPACITANCE  
TRUTH TABLE  
(f=1.0MHz, VIN=VCC or VSS)  
E
H
L
L
L
W
X
H
L
G
X
L
X
H
Mode  
Standby  
Read  
Output  
HIGH Z  
DOUT  
DIN  
Power  
ICC3  
ICC1  
ICC1  
ICC1  
Parameter  
Address Lines  
Data Lines  
Chip Enable Line  
Write Control Line  
Sym  
CI  
CD/Q  
CC  
Max  
60  
20  
20  
60  
Unit  
pF  
pF  
pF  
pF  
Write  
Output Deselect  
H
HIGH Z  
CN  
These parameters are sampled, not 100% tested.  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Aug. 2001 Rev. 13  
ECO #14561  
2
EDI8F32256C  
AC CHARACTERISTICS READ CYCLE  
Symbol  
12ns  
15ns  
20ns  
25ns  
Parameter  
JEDEC Alt.  
Min Max Min Max Min  
Max Min Max Units  
Read Cycle Time  
Address Access Time  
Chip Enable Access  
TAVAV TRC  
TAVQV TAA  
TELQV TACS  
TELQX TCLZ  
TEHQZ TCHZ  
TAVQX TOH  
TGLQV TOE  
TGLQX TOLZ  
TGHQZ TOHZ  
12  
15  
20  
25  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
12  
12  
15  
15  
20  
20  
25  
25  
Chip Enable to Output in Low Z (1)  
3
3
0
3
3
0
3
3
0
3
3
0
Chip Disable to Output in High Z (1)  
Output Hold from Address Change  
Output Enable to Output Valid  
6
6
6
7
7
7
9
9
9
9
9
9
Output Enable to Output in Low Z (1)  
Output Disable to Output in High Z (1)  
Note 1: Parameter guaranteed, but not tested.  
FIG. 2  
READ CYCLE 1 - W HIGH, G, E LOW  
TAVAV  
A
ADDRESS 1  
ADDRESS 2  
TAVQX  
TAVQV  
Q
DATA 2  
DATA 1  
FIG. 3  
READ CYCLE 2 - W HIGH  
TAVAV  
A
TAVQV  
E
TELQV  
TELQX  
TEHQZ  
TGHQZ  
G
Q
TGLQV  
TGLQX  
Aug. 2001 Rev. 13  
ECO #14561  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
3
EDI8F32256C  
AC CHARACTERISTICS WRITE CYCLE  
Symbol  
10ns  
12ns  
15ns  
20ns  
25ns  
Parameter  
JEDEC Alt.  
Min Max Min Max Min  
Max Min Max Min Max Units  
Write Cycle Time  
Chip Enable to End of Write  
TAVAV TWC  
10  
12  
15  
20  
25  
ns  
TELWH TCW  
TWLEH TCW  
7
7
8
8
12  
10  
10  
10  
10  
10  
ns  
ns  
Address Setup Time  
Address Valid to End of Write  
Write Pulse Width  
TAVWL TAS  
TAVEL TAS  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
TAVWH TAW  
TAVEH TAW  
7
7
8
8
10  
10  
10  
10  
10  
10  
ns  
ns  
TWLWH TWP  
TELEH TWP  
7
7
8
8
10  
10  
10  
10  
10  
10  
ns  
ns  
Write Recovery Time  
Data Hold Time  
TWHAX TWR  
TEHAX TWR  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
TWHDX TDH  
TEHDX TDH  
3
3
3
3
3
3
3
3
3
3
ns  
ns  
Write to Output in High Z (1)  
Data to Write Time  
TWLQZ TWHZ  
0
5
0
6
0
9
0
9
0
9
ns  
TDVWH TDW  
TDVEH TDW  
5
5
6
6
7
7
8
8
8
8
ns  
ns  
Output Active from End of Write (1)  
TWHQX TWLZ  
3
3
3
3
3
ns  
Note 1: Parameter guaranteed, but not tested.  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Aug. 2001 Rev. 13  
ECO #14561  
4
EDI8F32256C  
FIG. 4  
WRITE CYCLE 1 - W CONTROLLED  
TAVAV  
TELWH  
A
E
TWHAX  
TWHDX  
TAVWH  
TWLWH  
W
TAVWL  
TDVWH  
HIGH Z  
DATA VALID  
D
Q
TWHQX  
TWLQZ  
FIG. 5  
WRITE CYCLE 2 - E CONTROLLED  
TAVAV  
A
TAVEL  
TELEH  
E
TAVEH  
TEHAX  
TWLEH  
W
TDVEH  
TEHDX  
D
Q
DATA VALID  
HIGH Z  
Aug. 2001 Rev. 13  
ECO #14561  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
5
EDI8F32256C  
ORDERING INFORMATION  
Part Number  
Speed  
Package  
No.  
32  
(ns)  
12  
15  
20  
25  
12  
15  
20  
25  
12  
15  
20  
25  
EDI8F32256C12MNC  
EDI8F32256C15MNC  
EDI8F32256C20MNC  
EDI8F32256C25MNC  
EDI8F32256C12MMC  
EDI8F32256C15MMC  
EDI8F32256C20MMC  
EDI8F32256C25MMC  
EDI8F32256C12MZC  
EDI8F32256C15MZC  
EDI8F32256C20MZC  
EDI8F32256C25MZC  
32  
32  
32  
333  
333  
333  
333  
85  
85  
85  
85  
NOTE: 1. For Gold SIMM change form EDI8F to EDI8G.  
PACKAGE DESCRIPTION  
PACKAGE NO. 32: 64 LEAD ANGLED SIMM  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
Aug. 2001 Rev. 13  
ECO #14561  
6
EDI8F32256C  
PACKAGE NO. 85: 64 PIN ZIP  
PACKAGE NO. 333: 64 LEAD SIMM  
ALL DIMENSIONS ARE IN INCHES  
Aug. 2001 Rev. 13  
ECO #14561  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
7

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