EDI8F81027C-B6 [ETC]

SRAM Modules ; SRAM模块\n
EDI8F81027C-B6
型号: EDI8F81027C-B6
厂家: ETC    ETC
描述:

SRAM Modules
SRAM模块\n

静态存储器
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EDI8F81027C  
1Mx8 CMOS SRAM MONOLITHIC  
DESCRIPTION  
FEATURES  
The EDI8F81027C is an 8Mb CMOS Static RAM based on two  
512Kx8 Static RAMs mounted on a multi-layered epoxy laminate  
(FR4) substrate.  
n 1 Mx8 bit CMOS Static RAM  
• Access Times 55 through 100ns  
• Data Retention Function (EDI8F81027LP )  
• TTL Compatible Inputs and Outputs  
• Fully Static, No Clocks  
A low power version with data retention (EDI8F81027LP) is also  
available.  
All inputs and outputs are TTL compatible and operate from a  
single 5V supply.  
n High Density Packaging  
Fully asynchronous, the EDI8F81027C requires no clocks or  
refreshing for operation.  
• 32 Pin DIP, No. 352  
n Single +5V (±10%) Supply Operation  
PIN CONFIGURATIONS AND BLOCK DIAGRAM  
PIN NAMES  
AØ-A19  
E
Address Inputs  
Chip Enable  
W
Write Enable  
DQØ-DQ7  
VCC  
VSS  
NC  
Common Data Input/Output  
Power (+5V±10%)  
Ground  
No Connection  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
1
EDI8F81027C  
ABSOLUTE MAXIMUM RATINGS*  
RECOMMENDED DC OPERATING CONDITIONS  
Voltage on any pin relative to VSS  
Operating Temperature TA (Ambient)  
Commercial  
-0.5V to 7.0V  
Parameter  
Sym  
VCC  
VSS  
VIH  
Min  
4.5  
0
2.2  
-0.3  
Typ  
5.0  
0
--  
--  
Max  
5.5  
0
6.0  
0.8  
Units  
Supply Voltage  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
V
V
V
V
0°C to +70°C  
-40°C to +85°C  
-55°C to +125°C  
1 Watt  
Industrial  
Storage Temperature  
Power Dissipation  
Output Current  
VIL  
20 mA  
*Stress greater than those listed under "Absolute Maximum Ratings" may cause  
permanent damage to the device. This is a stress rating only and functional operation  
of the device at these or any other conditions greater than those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect reliability.  
AC TEST CONDITIONS  
Input Pulse Levels  
Input Rise and Fall Times  
Input and Output Timing Levels  
Output Load  
VSS to 3.0V  
5ns  
1.5V  
1TTL, CL =100pF  
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)  
DC ELECTRICAL CHARACTERISTICS  
Parameter  
Operating Power Supply Current  
Symbol  
ICC1  
Conditions  
W, E = VIL, II/O = 0mA,  
Min Cycle  
Min  
--  
Typ*  
85  
Max  
140  
Units  
mA  
Standby (TTL) Power Supply Current  
ICC2  
ICC3  
E ³ VIH, VIN £ VIL  
VIN ³ VIH  
E ³ VCC-0.2V  
--  
--  
25  
55  
2
mA  
mA  
Full Standby Power Supply Current (CMOS)  
C
1.5  
VIN ³ VCC-0.2V or VIN £  
VIN = 0V to VCC  
V I/O = 0V to VCC  
IOH = -1.0mA  
0.2V  
LP--  
190  
Input Leakage Current  
Output Leakage Current  
Output High Voltage  
Output Low Voltage  
ILI  
ILO  
VOH  
VOL  
-10  
-10  
2.4  
--  
--  
--  
--  
--  
10  
10  
--  
µA  
µA  
V
IOL = 2.1mA  
0.4  
V
*Typical: TA = 25°C, VCC = 5.0V  
CAPACITANCE  
TRUTH TABLE  
(f=1.0MHz, VIN=VCC or VSS)  
G
X
H
L
E
H
L
L
L
W
X
H
H
L
Mode  
Standby  
Output Deselect  
Read  
Output  
High Z  
High Z  
DOUT  
DIN  
Power  
ICC2, ICC3  
ICC1  
ICC1  
ICC1  
Parameter  
Address Lines  
Data Lines  
Chip Enable Line  
Write and Output Enable Lines  
Sym  
CI  
CD/Q  
CC  
Max  
Unit  
30  
43  
10  
32  
pF  
pF  
pF  
pF  
X
Write  
CW  
These parameters are sampled, not 100% tested.  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
2
EDI8F81027C  
AC CHARACTERISTICS READ CYCLE  
Symbol  
55ns  
70ns  
85ns  
100ns  
Parameter  
JEDEC Alt.  
Min Max Min Max Min  
Max Min Max Units  
Read Cycle Time  
TAVAV TRC  
TAVQV TAA  
TELQV TACS  
TELQX TCLZ  
TEHQZ TCHZ  
TAVQX TOH  
55  
70  
85  
100  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
55  
55  
70  
70  
85  
85  
100  
100  
Chip Enable Access Time  
Chip Enable to Output in Low Z (1)  
Chip Disable to Output in High Z (1)  
Output Hold from Address Change  
5
5
5
5
5
5
5
5
25  
30  
35  
40  
Note 1: Parameter guaranteed, but not tested.  
READ CYCLE 1 - W HIGH, E LOW  
TAVAV  
A
ADDRESS 1  
ADDRESS 2  
TAVQX  
TAVQV  
Q
DATA 2  
DATA 1  
READ CYCLE 2 - W HIGH  
TAVAV  
A
TAVQV  
E
TELQV  
TELQX  
TEHQZ  
TGHQZ  
G
Q
TGLQV  
TGLQX  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
3
EDI8F81027C  
AC CHARACTERISTICS WRITE CYCLE  
Write Cycle  
Parameter  
Symbol  
JEDEC Alt.  
55ns  
70ns  
85ns  
100ns  
Min Max Min Max Min  
Max Min Max Units  
Write Cycle Time  
TAVAV TWC  
55  
70  
85  
100  
ns  
Chip Enable to End of Write  
TELWH TCW  
TELEH TCW  
50  
50  
65  
65  
70  
70  
80  
80  
ns  
ns  
Address Setup Time  
Address Valid to End of Write  
Write Pulse Width  
TAVWL TAS  
TAVEL TAS  
0
0
0
0
0
0
0
0
ns  
ns  
TAVWH TAW  
TAVEH TAW  
50  
50  
65  
65  
70  
70  
80  
80  
ns  
ns  
TWLWH TWP  
45  
65  
70  
80  
ns  
TWLEH TWP45  
65  
70  
80  
ns  
Write Recovery Time  
Data Hold Time  
TWHAX TWR  
TEHAX TWR  
5
5
5
5
5
5
5
5
ns  
ns  
TWHDX TDH  
TEHDX TDH  
0
0
0
0
0
0
0
0
ns  
ns  
Write to Output in High Z (1)  
Data to Write Time  
TWLQZ TWHZ  
25  
0
30  
0
35  
0
40  
ns  
TDVWH TDW  
TDVEH TDW  
25  
25  
30  
30  
35  
35  
40  
40  
ns  
ns  
Output Active from End of Write (1)  
TWHQX TWLZ  
5
5
5
5
ns  
Note 1: Parameter guaranteed, but not tested.  
WRITE CYCLE 1 - W CONTROLLED  
TAVAV  
TELWH  
A
E
TWHAX  
TAVWH  
TWLWH  
W
TAVWL  
TDVWH  
TWHDX  
DATA VALID  
D
Q
TWHQX  
TWLQZ  
HIGH Z  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
4
EDI8F81027C  
WRITE CYCLE 2 E CONTROLLED  
TAVAV  
A
TAVEL  
TELEH  
E
TAVEH  
TEHAX  
TEHDX  
TWLEH  
W
TDVEH  
D
Q
DATA VALID  
HIGH Z  
DATA RETENTION CHARACTERISTICS (LP VERSION ONLY)  
Characteristic  
Sym  
Test Conditions  
VDD  
Min  
Typ  
Max  
Unit  
70°C  
--  
85°C  
--  
Data Retention Voltage  
VDD  
2
--  
V
Data Retention Quiescent Current  
ICCDR  
E ³ VDD -0.2V  
VIN ³ VDD -0.2V  
or VIN £ 0.2V  
2V  
3V  
--  
100  
160  
--  
130  
210  
--  
µA  
µA  
ns  
--  
0
Chip Disable to Data Retention Time TCDR(1)  
--  
--  
Operation Recovery Time  
TR (1)  
TAVAV*  
--  
--  
ns  
Note: Parameter guaranteed, but not tested  
* Read Cycle Time  
DATA RETENTION - E CONTROLLED  
4.5V  
4.5V  
CC  
VDD  
TCDR  
TR  
E=VDD-0.2V  
E
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
5
EDI8F81027C  
ORDERING INFORMATION  
Standard Power  
Low Power  
Speed  
(ns)  
55  
70  
85  
Package  
No.  
352  
352  
352  
with Data Retention  
EDI8F81027LP55B6C  
EDI8F81027LP70B6C  
EDI8F81027LP85B6C  
EDI8F81027LP100B6C  
EDI8F81027C55B6C  
EDI8F81027C70B6C  
EDI8F81027C85B6C  
EDI8F81027C100B6C  
100  
352  
Note: To order an Industrial grade product substitute the letter C in the Suffix with the letter I,  
eg. EDI8F81027C70B6C becomes EDI8F81027C70B6I.  
PACKAGE DESCRIPTION  
PACKAGE NO. 352: 32 PIN DIP  
ALL DIMENSIONS ARE IN INCHES  
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com  
July 2002 Rev. 3A  
ECO #15405  
6

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