EL5128IY-T7 [ETC]
Operational Amplifier ; 运算放大器\n
| 型号： | EL5128IY-T7 |
| 厂家： | 
ETC |
| 描述： | Operational Amplifier
|
| 文件： | 总11页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EL5128
®
Data Sheet
November 22, 2002
FN7000
Dual V
Buffer
Amplifier & Gamma Reference
Features
COM
• Dual VCOM amplifier
The EL5128 integrates two V
COM
amplifiers with a single gamma
reference buffer. Operating on
• Single gamma reference buffer
• 12MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current = 2.0mA
• High slew rate = 10V/µs
• Unity-gain stable
®
supplies ranging from 5V to 15V, while consuming only
2.0mA, the EL5128 has a bandwidth of 12MHz (-3dB) and
provides common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables this
amplifier to offer maximum dynamic range at any supply
voltage. The EL5128 also features fast slewing and settling
times, as well as a high output drive capability of 30mA (sink
and source).
• Beyond the rails input capability
• Rail-to-rail output swing
• Ultra-small package
The EL5128 is targeted at TFT-LCD applications, including
notebook panels, monitors, and LCD-TVs. It is available in
the 10-pin MSOP package and is specified for operation
over the -40°C to +85°C temperature range.
Applications
• TFT-LCD drive circuits
• Notebook displays
• LCD desktop monitors
• LCD-TVs
Pinout
EL5128IY
(10-PIN MSOP)
TOP VIEW
Ordering Information
VOUTA
VINA-
VINA+
VS+
1
2
3
4
5
10 VOUTB
PART NUMBER
PACKAGE TAPE & REEL OUTLINE #
9
8
7
6
VINB-
VINB+
VS-
-
+
+
-
EL5128IY
10-Pin MSOP
10-Pin MSOP
10-Pin MSOP
-
MDP0043
MDP0043
MDP0043
EL5128IY-T7
EL5128IY-T13
7”
13”
VINC
VOUTC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-ELANTEC or 408-945-1323 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Elantec is a registered trademark of Elantec Semiconductor, Inc.
1
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
EL5128
Absolute Maximum Ratings
Thermal Information
o
Supply Voltage between V + and V -. . . . . . . . . . . . . . . . . . . .+18V
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .+125 C
S
S
o
o
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V - - 0.5V, V + 0.5V
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . -65 C to +150 C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
S
S
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . 30mA
ESD Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
Operating Conditions
o
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . -40 C to +85 C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at
the specified temperature and are pulsed tests, therefore: T = T = T
A
J
C
Electrical Specifications
V + = +5V, V - = -5V, R = 10kΩ and C = 10pF to 0V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
12
UNIT
Input Characteristics
V
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
V
= 0V
= 0V
2
5
mV
µV/°C
nA
OS
CM
CM
a
TCV
OS
I
V
2
50
B
R
C
Input Impedance
1
GΩ
pF
IN
IN
Input Capacitance
1.35
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
(V
(V
amps)
-5.5
50
+5.5
V
COM
COM
CMRR
amps) for V from -5.5V to +5.5V
IN
70
95
dB
A
-4.5V ≤ V
-4.5V ≤ V
≤ +4.5V (V
amps)
COM
75
dB
VOL
OUT
OUT
AV
Voltage Gain
≤ +4.5V
0.995
1.005
-4.85
V/V
Output Characteristics
V
Output Swing Low
Output Swing High
Short Circuit Current
Output Current
I = -5mA
-4.92
4.92
±120
±30
V
V
OL
L
V
I = 5mA
4.85
OH
L
I
I
mA
mA
SC
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Dynamic Performance
SR Slew Rate
V
is moved from ±2.25V to ±7.75V
60
80
dB
µA
S
I
No load
660
1000
S
b
-4.0V ≤ V
≤ +4.0V, 20% to 80%
10
500
12
8
V/µs
ns
OUT
t
Settling to +0.1% (A = +1)
V
(A = +1), V = 2V step
V O
S
BW
-3dB Bandwidth
R
R
R
= 10kΩ, C = 10pF
MHz
MHz
°
L
L
L
L
GBWP
PM
Gain-Bandwidth Product
Phase Margin
= 10kΩ, C = 10pF (V
amps)
amps)
L
COM
COM
= 10kΩ, C = 10pF (V
50
75
L
CS
Channel Separation
f = 5MHz
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
2
EL5128
Electrical Specifications
V + = 5V, V -= 0V, R = 10kΩ and C = 10pF to 2.5V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
Input Characteristics
Input Offset Voltage
DESCRIPTION
CONDITION
MIN
TYP
MAX
10
UNIT
V
V
a
= 2.5V
= 2.5V
2
5
mV
µV/°C
nA
OS
CM
CM
TCV
Average Offset Voltage Drift
Input Bias Current
OS
I
V
2
50
B
R
C
Input Impedance
1
GΩ
pF
IN
IN
Input Capacitance
1.35
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
45
+5.5
V
CMRR
for V from -0.5V to +5.5V
IN
66
95
dB
A
A
0.5V ≤ V
0.5V ≤ V
≤+ 4.5V
≤+ 4.5V
75
dB
VOL
OUT
OUT
Voltage Gain
0.995
1.005
150
V/V
V
Output Characteristics
V
V
Output Swing Low
Output Swing High
Short Circuit Current
Output Current
I = -5mA
80
mV
V
OL
L
I = +5mA
4.85
4.92
±120
±30
OH
L
I
I
mA
mA
SC
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Dynamic Performance
SR Slew Rate
V
is moved from 4.5V to 15.5V
60
80
dB
µA
S
I
No load
660
1000
S
b
1V ≤ V
≤ 4V, 20% to 80%
10
500
12
8
V/µs
ns
OUT
t
Settling to +0.1% (A = +1)
V
(A = +1), V = 2V step
S
V
O
BW
-3dB Bandwidth
R
R
R
= 10kΩ, C = 10pF
MHz
MHz
°
L
L
L
L
GBWP
PM
Gain-Bandwidth Product
Phase Margin
= 10 kΩ, C = 10pF
L
= 10 kΩ, C = 10 pF
50
75
L
CS
Channel Separation
f = 5MHz
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
3
EL5128
Electrical Specifications
V + = 15V, V - = 0V, R = 10kΩ and C = 10pF to 7.5V, T = 25°C unless otherwise specified.
S
S
L
L
A
PARAMETER
DESCRIPTION
CONDITION
MIN
TYP
MAX
14
UNIT
Input Characteristics
V
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
V
a
= 7.5V
= 7.5V
2
5
mV
µV/°C
nA
OS
CM
CM
TCV
OS
I
V
2
50
B
R
C
Input Impedance
1
GΩ
pF
IN
IN
Input Capacitance
1.35
CMIR
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
53
+15.5
V
CMRR
for V from -0.5V to +15.5V
IN
72
95
dB
A
A
0.5V ≤ V
0.5V ≤ V
≤ 14.5V
≤ 14.5V
75
dB
VOL
OUT
OUT
Voltage Gain
0.995
1.005
150
V/V
V
Output Characteristics
V
V
Output Swing Low
Output Swing High
Short Circuit Current
Output Current
I = -5mA
80
mV
V
OL
L
I = +5mA
14.85
14.92
±120
±30
OH
L
I
I
mA
mA
SC
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Dynamic Performance
SR Slew Rate
V
is moved from 4.5V to 15.5V
60
80
dB
µA
S
I
No load
660
1000
S
b
1V ≤ V
≤ 14V, 20% to 80%
10
500
12
8
V/µs
ns
OUT
t
Settling to +0.1% (A = +1)
V
(A = +1), V = 2V step
S
V
O
BW
-3dB Bandwidth
R
R
R
= 10kΩ, C = 10pF
MHz
MHz
°
L
L
L
L
GBWP
PM
Gain-Bandwidth Product
Phase Margin
= 10kΩ, C = 10pF
L
= 10kΩ, C = 10 pF
50
75
L
CS
Channel Separation
f = 5MHz
dB
a.Measured over operating temperature range
b.Slew rate is measured on rising and falling edges
4
EL5128
Typical Performance Curves
Input Offset Voltage Distribution
Input Offset Voltage Drift
1800
70
60
50
40
30
20
10
0
Typical
Production
Distribution
Typical
Production
Distribution
V = 5V
S
V = 5V
A
S
1600
T =25°C
1400
1200
1000
800
600
400
200
0
Input Offset Voltage Drift, TCV (µV/°C)
OS
Input Offset Voltage (mV)
Input Offset Voltage vs Temperature
Input Bias Current vs Temperature
10
5
2.0
0.0
V = 5V
S
V = 5V
S
0
-5
-2.0
-50
0
50
100
150
-50
0
50
100
150
Temperature (°C)
Temperature (°C)
Output Low Voltage vs Temperature
Output High Voltage vs Temperature
-4.91
-4.92
-4.93
-4.94
-4.95
-4.96
-4.97
4.97
4.96
4.95
4.94
4.93
V = 5V
S
V = 5V
S
I
=-5mA
I
=5mA
OUT
OUT
-50
0
50
100
150
-50
0
50
100
150
Temperature (°C)
Temperature (°C)
Open-Loop Gain vs Temperature
Slew Rate vs Temperature
10.40
10.35
10.30
10.25
100
90
V = 5V
V = 5V
S
S
R =10kΩ
L
80
-50
0
50
100
150
-50
0
50
100
150
Temperature (°C)
Temperature (°C)
5
EL5128
Typical Performance Curves
Supply Current per Amplifier vs Supply Voltage
Supply Current per Amplifier vs Temperature
700
600
500
400
300
T =25°C
A
0.55
0.5
V = 5V
S
0.45
-50
0
50
100
150
0
5
10
15
20
Temperature (°C)
Supply Voltage (V)
Frequency Response for Various R
Open Loop Gain and Phase vs Frequency
L
5
0
200
150
100
50
20
10kΩ
1kΩ
-30
Phase
-80
560Ω
150Ω
C =10pF
L
-5
A =1
V
V = 5V
S
-130
-180
-230
V = 5V, T =25°C
S
A
R =10KΩ to GND
-10
L
0
C =12pF to GND
L
Gain
-15
100k
-50
1M
100M
10M
10
100
1k
10k
100k
1M
10M 100M
Frequency (Hz)
Frequency (Hz)
Frequency Response for Various C
Closed Loop Output Impedance vs Frequency
L
20
200
160
120
80
R =10kΩ
L
A =1
V
10
0
A =1
V
V = 5V
S
V = 5V
S
T =25°C
A
12pF
50pF
-10
-20
-30
100pF
40
1000pF
0
10k
100k
1M
10M
100M
100
1M
10M
Frequency (Hz)
Frequency (Hz)
Maximum Output Swing vs Frequency
CMRR vs Frequency
80
60
40
20
0
12
10
8
6
V = 5V
S
T =25°C
A
4
A =1
V
R =10kΩ
L
V = 5V
A
S
2
C =12pF
L
T =25°C
Distortion <1%
0
1k
10k
100k
1M
10k
100
1M
10M
100
10M
Frequency (Hz)
Frequency (Hz)
6
EL5128
Typical Performance Curves
Input Voltage Noise Spectral Density vs Frequency
PSRR vs Frequency
600
100
80
PSRR+
PSRR-
60
40
20
10
V = 5V
S
T =25°C
A
1
0
100
1k
10k
100k
1M
10M
100M
1k
10k
100k
1M
100
10M
Frequency (Hz)
Frequency (Hz)
Total Harmonic Distortion + Noise vs Frequency
Channel Separation vs Frequency Response
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
-60
-80
Measured Channel A to B
V = 5V
S
R =10kΩ
L
A =1
V
V
=220mV
IN
RMS
-100
-120
-140
V = 5V
S
R =10kΩ
L
A =1
V
IN
V
=1V
RMS
1k
10k
100k
1k
10k
100k
1M
6M
Frequency (Hz)
Frequency (Hz)
Settling Time vs Step Size
Small-Signal Overshoot vs Load Capacitance
V = 5V
S
V = 5V
S
90
70
50
30
10
4
3
A =1
V
A =1
V
R =10kΩ
R =10kΩ
L
L
IN
C =12pF
L
V
= 50mV
0.1%
2
T =25°C
A
T =25°C
A
1
0
-1
-2
-3
-4
0.1%
600
0
200
400
800
10
100
1000
Load Capacitance (pF)
Settling Time (nS)
Small Signal Transient Response
Large Signal Transient Response
1V
1µS
50mV
200ns
V = 5V
S
T =25°C
A
A =1
V
R =10kΩ
L
C =12pF
L
V = 5V
S
T =25°C
A
A =1
V
R =10kΩ
L
C =12pF
L
7
EL5128
Pin Descriptions
PIN
NUMBER
PIN NAME
PIN FUNCTION
Amplifier A Output
EQUIVALENT CIRCUIT
1
VOUTA
V
S+
V
S-
GND
Circuit 1
2
VINA-
Amplifier A Inverting Input
V
S+
V
S-
Circuit 2
3
4
VINA+
VS+
Amplifier A Non-Inverting Input
Positive Power Supply
Amplifier C
(Reference Circuit 2)
5
VINC
(Reference Circuit 2)
(Reference Circuit 2)
6
VOUTC
VS-
Amplifier C Output
7
Negative Power Supply
Amplifier B Non-Inverting Input
Amplifier B Inverting Input
Amplifier B Output
8
VINB+
VINB-
VOUTB
(Reference Circuit 2)
(Reference Circuit 2)
(Reference Circuit 1)
9
10
8
EL5128
Output Phase Reversal
The EL5128 is immune to phase reversal as long as the
input voltage is limited from (V -) -0.5V to (V +) +0.5V.
Figure 2 shows a photo of the output of the device with the
input voltage driven beyond the supply rails. Although the
device's output will not change phase, the input's over-
voltage should be avoided. If an input voltage exceeds
supply voltage by more than 0.6V, electrostatic protection
diodes placed in the input stage of the device begin to
conduct and over-voltage damage could occur.
Applications Information
Product Description
S
S
The EL5128 voltage feedback amplifier/buffer combination is
fabricated using a high voltage CMOS process. It exhibits
rail-to-rail input and output capability, it is unity gain stable,
and has low power consumption (500µA per amplifier).
These features make the EL5128 ideal for a wide range of
general-purpose applications. Connected in voltage follower
mode and driving a load of 10kΩ and 12pF, the EL5128 has
a -3dB bandwidth of 12MHz while maintaining a 10V/µs slew
rate.
FIGURE 2. Operation with Beyond-the-Rails Input
Operating Voltage, Input, and Output
1V
100µs
The EL5128 is specified with a single nominal supply voltage
from 5V to 15V or a split supply with its total range from 5V
to 15V. Correct operation is guaranteed for a supply range of
4.5V to 16.5V. Most EL5128 specifications are stable over
both the full supply range and operating temperatures of -
40°C to +85°C. Parameter variations with operating voltage
and/or temperature are shown in the typical performance
curves.
V = 2.5V
S
T =25°C
A
A =1
V
V
=6V
P-P
IN
1V
The input common-mode voltage range of the amplifiers
extends 500mV beyond the supply rails. The output swings
of the EL5128 typically extend to within 80mV of positive and
negative supply rails with load currents of 5mA. Decreasing
load currents will extend the output voltage range even
closer to the supply rails. Figure 1 shows the input and
output waveforms for the device in the unity-gain
Power Dissipation
With the high-output drive capability of the EL5128 amplifier,
it is possible to exceed the 125°C “absolute-maximum
junction temperature” under certain load current conditions.
Therefore, it is important to calculate the maximum junction
temperature for the application to determine if load
conditions need to be modified for the amplifier to remain in
the safe operating area.
configuration. Operation is from ±5V supply with a 10kΩ load
connected to GND. The input is a 10V
sinusoid. The
P-P
output voltage is approximately 9.985V
.
P-P
The maximum power dissipation allowed in a package is
determined according to:
FIGURE 1. Operation with Rail-to-Rail Input and Output
T
- T
AMAX
JMAX
--------------------------------------------
P
=
DMAX
Θ
JA
V = 5V
S
where:
T =25°C
A
A =1
V
IN
V
=10V
P-
• T
• T
= Maximum junction temperature
= Maximum ambient temperature
JMAX
AMAX
• θ = Thermal resistance of the package
JA
• P
DMAX
= Maximum power dissipation in the package
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
Short Circuit Current Limit
The EL5128 will limit the short circuit current to ±120mA if
the output is directly shorted to the positive or the negative
supply. If an output is shorted indefinitely, the power
dissipation could easily increase such that the device may
be damaged. Maximum reliability is maintained if the output
continuous current never exceeds ±30mA. This limit is set by
the design of the internal metal interconnects.
P
= Σi × [V × I
+ (V + - V
i) × I
i]
LOAD
DMAX
S
SMAX
S
OUT
when sourcing, and:
P
= Σi × [V × I
+ (V
i - V -) × I
i]
LOAD
DMAX
S
SMAX
OUT
S
9
EL5128
when sinking.
where:
Driving Capacitive Loads
The EL5128 can drive a wide range of capacitive loads. As
load capacitance increases, however, the -3dB bandwidth of
the device will decrease and the peaking increase. The
amplifiers drive 10pF loads in parallel with 10kΩ with just
1.5dB of peaking, and 100pF with 6.4dB of peaking. If less
peaking is desired in these applications, a small series
resistor (usually between 5Ω and 50Ω) can be placed in
series with the output. However, this will obviously reduce
the gain slightly. Another method of reducing peaking is to
add a “snubber” circuit at the output. A snubber is a shunt
load consisting of a resistor in series with a capacitor. Values
of 150Ω and 10nF are typical. The advantage of a snubber is
that it does not draw any DC load current or reduce the gain
• V = Total supply voltage
S
• I
= Maximum supply current per amplifier
SMAX
• V
i = Maximum output voltage of the application
OUT
• I
i = Load current
LOAD
If we set the two P
can solve for R
LOAD
and 4 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
equations equal to each other, we
i to avoid device overheat. Figures 3
DMAX
simple matter to see if P
exceeds the device's power
Power Supply Bypassing and Printed Circuit
Board Layout
DMAX
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves in Figures 3
and 4.
The EL5128 can provide gain at high frequency. As with any
high-frequency device, good printed circuit board layout is
necessary for optimum performance. Ground plane
construction is highly recommended, lead lengths should be
as short as possible and the power supply pins must be well
bypassed to reduce the risk of oscillation. For normal single
FIGURE 3. Package Power Dissipation vs Ambient
Temperature
Package Power Dissipation vs Ambient Temperature
JEDEC JESD51-7 High Effective Thermal Conductivity Test Board
1
supply operation, where the V - pin is connected to ground,
S
0.9
a 0.1µF ceramic capacitor should be placed from V + to pin
S
870mW
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
to V - pin. A 4.7µF tantalum capacitor should then be
S
connected in parallel, placed in the region of the amplifier.
One 4.7µF capacitor may be used for multiple devices. This
same capacitor combination should be placed at each
supply pin to ground if split supplies are to be used.
0
25
50
75 85
100
125
Ambient Temperature (°C)
FIGURE 4. Package Power Dissipation vs Ambient
Temperature
Package Power Dissipation vs Ambient Temperature
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
0.6
0.5
486mW
0.4
0.3
0.2
0.1
0
0
25
50
75 85
100
125
Ambient Temperature (°C)
10
EL5128
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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