关闭背景特效

F3H3ND [ETC]

TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3A I(D) | SO ; 晶体管| MOSFET |对匹配的| N沟道| 30V V（ BR ） DSS | 3A I（ D） | SO\n

F3H3ND


元器件型号：	F3H3ND
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 3A I(D) \| SO 晶体管\| MOSFET \|对匹配的\| N沟道\| 30V V（ BR ） DSS \| 3A I（ D） \| SO\n 晶体晶体管光电二极管
PDF文件：	总1页 (文件大小：144K)
下载文档：	下载PDF数据表文档文件
型号参数：F3H3ND参数

F3H3P

TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SO

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14 ETC

F3H3PD

TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 2.5A I(D) | SO

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15 ETC

F3K3

Silicon Power Rectifiers

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21 EDAL

F3L100R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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725 INFINEON

F3L100R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor, 117A I(C), 650V V(BR)CES, N-Channel, MODULE-34

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2 INFINEON

F3L100R12W2H3_B11

Insulated Gate Bipolar Transistor,

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0 INFINEON

F3L100R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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0 INFINEON

F3L150R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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691 INFINEON

F3L150R07W2E3_B11

Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, MODULE-34

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14 INFINEON

F3L150R07W2E3-B11

150A, 650V, N-CHANNEL IGBT, MODULE-34

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3 INFINEON

F3L150R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L150R12W2H3_B11

Insulated Gate Bipolar Transistor,

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1 INFINEON

F3L200R07PE4

EasyPACK4 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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37 INFINEON

F3L200R07PE4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L200R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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1 INFINEON

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