F3L150R07W2E3-B11 [INFINEON]

150A, 650V, N-CHANNEL IGBT, MODULE-34;
F3L150R07W2E3-B11
型号: F3L150R07W2E3-B11
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

150A, 650V, N-CHANNEL IGBT, MODULE-34

局域网 栅 双极性晶体管 功率控制
文件: 总11页 (文件大小:1075K)
下载:  下载PDF数据表文档文件

F3L150R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L150R12W2H3_B11

Insulated Gate Bipolar Transistor,

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1 INFINEON

F3L200R07PE4

EasyPACK4 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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37 INFINEON

F3L200R07PE4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L200R12W2H3B11BPSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-32

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1 INFINEON

F3L300R07PE4

EasyPACK module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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119 INFINEON

F3L30R06W1E3_B11

EasyPACK module with Trench/Feldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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43 INFINEON

F3L30R06W1E3-B11

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L30R06W1E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON

F3L400R12PT4B26BOSA1

Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES

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1 INFINEON

F3L50R06W1E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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49 INFINEON

F3L50R06W1E3-B11

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

F3L75R07W2E3_B11

EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

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149 INFINEON

F3L75R07W2E3-B11

Insulated Gate Bipolar Transistor, 95A I(C), 650V V(BR)CES, N-Channel, MODULE-27

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0 INFINEON

F3L75R07W2E3B11BOMA1

Insulated Gate Bipolar Transistor

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0 INFINEON