FLD5F6CX-E25 [ETC]

FIBER OPTIC TRANSMITTER ; 光纤传输器\n
FLD5F6CX-E25
型号: FLD5F6CX-E25
厂家: ETC    ETC
描述:

FIBER OPTIC TRANSMITTER
光纤传输器\n

光纤 光电
文件: 总6页 (文件大小:173K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
FEATURES  
• Direct Modulation MQW DFB Laser  
• Built-in TEC, Thermistor and Monitor PD  
• 14-Pin Butterfly Type Module  
• Low Residual Chirp  
• Optimized for 2.5 Gb/s Modulation Rates  
• Selected wavelengths according to ITU-T grid available  
APPLICATIONS  
This MQW laser is intended for application in 2.5 Gb/s  
long haul Dense Wavelength Division Multiplexing (DWDM) systems.  
Transmission spans of 100 km are possible without amplification.  
DESCRIPTION  
The Multiple Quantum Well (MQW) Laser is a high power laser  
capable of 2.5 Gb/s transmission. It is packaged in a “butterfly” type module.  
The module employs a high efficiency optical coupling system, coupling the  
laser output through a built-in optical isolator into a single mode fiber pigtail.  
The modules also include a monitor photodiode, a thermoelectric cooler (TEC)  
and thermistor. This device is designed for use in DWDM direct modulation transmission  
systems. Selected wavelengths specified to the ITU-T grid are available.  
ABSOLUTE MAXIMUM RATINGS (T =25°C)  
c
Parameter  
Symbol  
Condition  
Ratings  
Unit  
°C  
T
Storage Temperature  
Operating Case Temperature  
-
-40 to +70  
stg  
T
°C  
-
-20 to +65  
op  
P
f
CW  
CW  
mW  
mA  
V
5.0  
150  
2
Optical Output Power  
Forward Current  
I
F
V
R
Reverse Voltage  
-
-
-
-
V
V
Photodiode Reverse Voltage  
Photodiode Forward Current  
TEC Voltage  
20  
10  
2.5  
1.4  
10  
95  
95  
DR  
I
mA  
V
DF  
V
c
I
c
TEC Current  
A
-
T
Lead Soldering Time  
<260°C  
Top<30°C  
Tst<30°C  
sec  
%
sold  
X
Environmental Operating Humidity  
Environmental Storage Humidity  
op  
%
X
st  
Edition 1.0  
March 1999  
1
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
OPTICAL AND ELECTRICAL CHARACTERISTICS (T =T , T =25°C, BOL, unless otherwise specified)  
set  
L
c
Limits  
Typ.  
-
Parameter  
Symbol  
Conditions  
Unit  
°C  
mA  
V
Min.  
15  
Max.  
35  
Laser Set Temperature  
Threshold Current  
Forward Voltage  
-
T
set  
I
th  
CW  
3
-
1.6  
25  
-
40  
1.75  
28  
-
V
FDC  
CW, I =30 mA, pin 12-13  
F
-
22  
2
R
s
Series Resistance  
CW, pin 12-13  
V
r
CW, at I <1500µA  
Reverse Voltage  
Optical Output Power  
Slope Efficiency  
Threshold Power  
V
mW  
R
P
f
CW  
2.0  
0.035  
-
-
-
η
CW, Pf=2.0mW  
-
-
mW/mA  
µW  
P
th  
I =I , CW  
F th  
-
50  
Tracking Error (Note 1)  
TE  
Pf=2.0mW, T =-20 to 65°C  
-0.5  
-
-
+0.5  
dB  
c
I
m
CW, Pf=2.0mW, V =5V  
DR  
Monitor Current  
0.10  
1.0  
100  
10  
-
mA  
nA  
pF  
I
D
V
=5V  
DR  
Photodiode Dark Current  
Photodiode Capacitance  
Photodiode Cutoff Frequency  
Peak Wavelength  
-
-
2
C
t
V
V
=5V, f=1 MHz  
DR  
-
f
=5V, 50load  
DR  
100  
-
cm  
MHz  
nm  
λ
Note (2)  
Note (4)  
-
p
-
Wavelength Drift  
-
-
0.2  
after 20 years  
-
nm  
Wavelength Stability with  
Case Temperature  
-
-
+/-2  
pm/°C  
Side Mode Suppression  
Spectral Width (-20dB)  
Sr  
-
33  
-
35  
-
-
dB  
Note (2)  
Note (2)  
0.5  
nm  
Rise Time (10%-90%)  
Fall Time (10%-90%)  
Cutoff Frequency  
Note (2)  
Note (2)  
-
-
0.1  
0.1  
-
0.125  
0.125  
-
nsec  
nsec  
GHz  
dB  
t
r
t
f
f
c
P =2.0mW, -3 dB  
f
4.0  
-
In-Band Ripple (Window)  
S
f=50 MHz~3 GHz  
-
+/-1.5  
21  
11  
f=50 MHz~2 GHz  
f=2 GHz~3 GHz  
f=3 GHz~5 GHz  
8
6
3
-
-
-
-
-
-
dB  
dB  
dB  
S
RF Return Loss  
Optical Isolation  
I
s
Tc=-20 to 65°C  
f=2.5 GHz  
Pf=2.0 mW, ORL=24 dB  
25  
-
35  
-
-
dB  
-140  
Relative Intensity Noise  
Kinks (up to 2.4 mW)  
Pulsation  
dB/Hz  
RIN  
Kns  
-
-
None  
None  
No Floor  
-
-
ER  
PP  
Note (3)  
Note (3)  
BER Performance  
1.5  
Power Penalty  
-
dB  
Note 1. TE=10*log{pf(Tcase)/Pf(Tc=25°C)}dB, APC  
Note 2. 2.5 Gb/s NRZ, pseudo-random, Pb=0.2mW, Ppeak=2.0mW  
Note 3. Bit rate=2.48832 Gb/s, PRBS=223-1, Dispersion=1,800 ps/nm (116km), Ppeak=2.0mW,  
Pbias=0.2mW (Extinction ratio=10dB), B.E.R.=1x10--10  
Decision point: Center of Back-to-Back at 10-9, Receiver: Fujitsu Standard Receiver  
Note 4. The selected wavelength is available which is listed in Fig. 8  
Edition 1.0  
March 1999  
2
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
(T =T , T =25°C, BOL, unless otherwise specified)  
TEC AND THERMISTOR CHARACTERISTICS  
L
set  
c
Limit  
Typ.  
Test Conditions  
Parameter  
Symbol  
Unit  
Min.  
Max.  
TL=Tset,  
Pf=2mW, Tc=65°C  
TL=Tset,  
Pf=2mW, Tc=65°C  
I
TEC Current  
-
-
-
-
1.0  
A
c
TEC Voltage  
Cooler Power  
-
-
2.4  
2.4  
V
V
c
TL=Tset,  
Pf=2mW, Tc=65°C  
W
P
R
TEC  
TEC  
TL=Tset,  
Pf=2mW, Tc=65°C  
TEC Resistance  
2.0  
2.4  
3.2  
R
tr  
Thermistor Resistance  
Thermistor B Constant  
TL=15 to 35°C  
6.3  
-
15.4  
kΩ  
B
-
3,270  
3,450  
3,630  
K
Fig. 1 Forward Current vs Output Power  
Fig. 2 Frequency Response  
4
P =2mW  
f
12  
9
T = 25°C  
L
3
6
3
0
2
1
0
-3  
-6  
-9  
-12  
0
2
4
6
8
10  
Frequency (GHz)  
0
30  
60  
90  
Forward Current, If (mA)  
Edition 1.0  
March 1999  
3
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
Fig. 4 Cooler Voltage -Current  
Fig. 3 RF Return Loss  
3.0  
3.0  
20  
10  
0
2.0  
1.0  
2.0  
1.0  
Vc  
Ic  
0.0  
0.0  
-10  
-20  
-1.0  
-1.0  
0
10 20 30 40 50 60 70 80  
Cooler Temperature (°C)  
0
2
4
6
8
10  
Frequency (GHz)  
Fig. 5 Spectrum  
Fig. 6 Temperature Dependance of  
Wavelength  
10  
0
1554  
-10  
-20  
-30  
-40  
-50  
1553  
1552  
1551  
1550  
-60  
10  
20  
30  
40  
1545  
1550  
1555  
Wavelength λ (nm)  
Laser Temperature, T (°C)  
L
Edition 1.0  
March 1999  
4
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
Fig. 7 Transmission Characteristics  
10-4  
2.48832 Gb/s, NRZ  
PRBS 223-1  
TL=Tset,  
Ppeak=2mW,  
Pb=0.2mW,  
(Rext=10dB)  
10-6  
10-8  
After  
116km  
Transmission  
Back to Back  
10-10  
10-12  
-40  
-35  
-30  
-25  
Average Received Optical Power (dBm)  
Fig. 8 Wavelength Table  
0.1  
0.1  
0.1  
0.1  
-E41  
1544.53  
1545.32  
1546.12  
1546.92  
1547.72  
1548.51  
1549.32  
1550.12  
1550.92  
1551.72  
1552.52  
1553.33  
1554.13  
1554.94  
1555.75  
1556.55  
1557.36  
1558.17  
Wavelength (nm)  
(TL=Tset)  
(in vacuum)  
-E40  
-E39  
-E38  
-E37  
-E36  
-E35  
-E34  
-E33  
-E32  
-E31  
-E30  
-E29  
-E28  
-E27  
-E26  
-E25  
-E24  
-E23  
-E22  
-E21  
Part Number  
Tolerance (nm)  
1527.99  
1528.77  
1529.55  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
FLD5F6CX-E62  
-E61  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
-E60  
-E59  
-E58  
-E57  
-E56  
-E55  
-E54  
-E53  
-E52  
-E51  
-E50  
-E49  
-E48  
-E47  
-E46  
-E45  
-E44  
-E43  
-E42  
1530.33  
1531.12  
1531.90  
1532.68  
1533.47  
1534.25  
1535.04  
1535.82  
1536.61  
1537.40  
1538.19  
1538.98  
1539.77  
1540.56  
1541.35  
1542.14  
1542.94  
1543.73  
1558.98  
1559.79  
1560.61  
1561.42  
1562.23  
1563.05  
-E20  
-E19  
-E18  
Edition 1.0  
March 1999  
5
1,550nm MQW-DFB  
DWDM Direct Modulation Laser  
FLD5F6CX-E  
“CX” PACKAGE  
UNIT: mm  
TOP VIEW  
17.24  
15.24  
7
6
5
4
3
2
1
2.54  
14-0.5  
PIN 1  
TH  
10 KΩ  
PIN 7  
TEC  
8
9
10 11 12 13 14  
0.5  
4-φ2.67  
1.70  
20.83  
22.0  
26.04  
29.97  
PIN 14  
5.41  
5.47  
8.17  
PIN 8  
PIN #  
FUNCTION  
0.5  
1.70  
1.  
2.  
3.  
4.  
5.  
6.  
7.  
8.  
9.  
Temperature Monitor  
Temperature Monitor  
Laser DC Bias (-)  
Monitor (Anode)  
Monitor (Cathode)  
TEHP (+)  
TEHP (-)  
Case Ground  
Case Ground  
4.15  
5.47  
* Pigtail length (L) shall  
be specified in the detail  
(individual) specification,  
if it is special.  
*L  
23  
10. N.C.  
L=1500 min. for standard  
13  
11. Laser Ground  
12. Laser Modulation (-)  
13. Case Ground  
14. N.C.  
P
o
For further information please contact:  
FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Americas & R.O.W.  
CAUTION  
Fujitsu Compound Semiconductor Products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
2355 Zanker Rd.  
San Jose, CA 95131-1138, U.S.A.  
Phone: (408) 232-9500  
FAX: (408) 428-9111  
• Do not put this product into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
55 Schanck Road,  
Suite A-2  
Freehold, NJ 07728-2964, U.S.A.  
Phone: (732) 303-0282  
FAX: (732) 431-3393  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
www.fcsi.fujitsu.com  
FUJITSU QUANTUM DEVICES, LTD.  
Asia & Japan  
FUJITSU MIIKROELCTRONIK GmbH  
Quantum Devices Division  
Network House  
Norreys Drive  
2-7-1, Nishi Shinjuku  
Shinjuku-ku, Tokyo 163-0721  
Japan  
Maidenhead, Berkshire SL6 4FJ, UK  
Phone:+44 (0)1628 504800  
FAX:+44 (0)1628 504888  
Phone: 3-5322-3356  
FAX: 3-5322-3398  
Fujitsu Limited reserves the right to change products and specifications without notice.  
The information does not convey any license under rights of Fujitsu Limited or others.  
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Printed in U.S.A. FCSI0199M200  
Edition 1.0  
March 1999  
6

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