FS0204NN00RB [ETC]

SURFACE MOUNT SCR; 表面安装SCR


型号：	FS0204NN00RB
厂家：	ETC
描述：	SURFACE MOUNT SCR 表面安装SCR
文件：	总4页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FS02...N

SURFACE MOUNT SCR

SOT223

(Plastic)

On-State Current

1.25 Amp

Gate Trigger Current

< 200 µA

Off-State Voltage

200 V ÷ 800 V

These series of Silicon Controlled

Rectifier use a high performance

PNPN technology.

These parts are intended for general

purpose applications where high gate

sensitivity is required using surface mount

technology.

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL

PARAMETER

On-state Current*

CONDITIONS

Min.

Max.

Unit

Half Cycle, Q = 180 º, T_tab= 95 ºC

1.25

0.8

I_T(RMS)

I_T(AV)

Average On-state Current*

Non-repetitive On-State Current

Fusing Current

Half Cycle, 60 Hz, T

Half Cycle, 50 Hz, T

t_p= 10ms, Half Cycle

_GR= 10 µA, T = 25 ºC

= 25 ºC

I_TSM

I²t

V_GRM

I_GM

P_GM

P_G(AV)

T_j

22.5

2.5

A²s

= 25 ºC

Peak Reverse Gate Voltage

Peak Gate Current

1.2

20 µs max.

20 ms max.

Peak Gate Dissipation

Gate Dissipation

ºC

0.2

Operating Temperature

Storage Temperature

-40

+125

+150

260

T_stg

T_sld

Soldering Temperature

10s max.

* with 5 cm²copper (e= 35mm) surface under tab.

SYMBOL

PARAMETER

CONDITIONS

VOLTAGE

Unit

R_GK= 1 KW

Repetitive Peak Off State

Voltage

V_DRM

V_RRM

200 400 600 800

Jun - 02

FS02...N

SURFACE MOUNT SCR

Electrical Characteristics

Unit

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

01 04 02

MIN

µA

I_GT

Gate Trigger Current

V_D= 12 V_DC, R_L= 140W, T_j= 25 ºC

MAX

20 50 200 200

V_D= V_DRM, R_GK= 1KW, T_j= 125 ºC MAX

V_R= V_RRM

at I_T= 1.6 Amp, tp = 380 µs, T_j= 25 ºC MAX

500

I_DRM/ I_RRM

Off-State Leakage Current

T_j= 25 ºC

MAX

1.45

0.9

150

0.8

0.1

V_TM

V_T(O)

r_d

V_GT

V_GD

On-state Voltage

T_j= 125 ºC

On-state Threshold Voltage

Dinamic Resistance

MAX

MIN

T_j= 125 ºC

V_D= 12 V_DC, R_L= 140W, T_j= 25 ºC

Gate Trigger Voltage

Gate Non Trigger Voltage

V_D= V_DRM, R_L= 3.3KW,

R_GK= 1KW,

T_j= 125 ºC

Holding Current

Latching Current

MAX

MIN

I_H

I_L

I_T= 50 mA , R_GK= 1KW, T_j= 25 ºC

I_G= 1 mA, R_GK= 1KW, T_j= 25 ºC

V/µs

V_D= 0.67 x V_DRM, R_GK= 1KW,

T_j= 125 ºC

dv / dt

Critical Rate of Voltage

Rise

I_G= 2 x I_GTTr £ 100 ns, F = 60 Hz,

MIN

A/µs

Critical Rate of Current Rise

di / dt

T_j= 125 ºC

ºC/W

R_th(j-l)

R_th(j-a)

Thermal Resistance

Junction-Leads for DC

Thermal Resistance

Junction-Ambient

PART NUMBER INFORMATION

00 RB

FAGOR

SCR

PACKAGING

FORMING

CASE

VOLTAGE

SENSITIVITY

CURRENT

Jun - 02

FS02...N

SURFACE MOUNT SCR

Fig. 1: Maximum average power dissipation

versus average on-state current

Fig. 2: Correlation between maximum

average power dissipation and maximum

allowable temperature (Tamb and T tab).

P (W)

1.4

P (W)

T tab (ºC)

-85

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

360 º

Rth (j-l)

1.2

-95

1.0

Rth (j-a)

a = 180 º

0.8

-105

-115

-125

a = 120 º

0.6

a = 90 º

0.4

a = 60 º

0.2

a = 30 º

(A)

T(AV)

Tamb (ºC)

0.0

0.2 0.4 0.6 0.8 1.0 1.2 1.4

20 40 60 80 100 120 140

Fig. 3: Average on-state current versus tab

temperature

Fig. 4: Relative variation of thermal impedance

junction to ambient versus pulse duration.

(A)

Zth(j-a) / Rth(j-a)

T(AV)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.00

0.10

a = 180 º

Standard foot print,

e (Cu) = 35 µm

T lead (ºC)

0.01

tp (s)

10 20 30 40 50 60 70 80 90 100 110 120 130

1E-3

1E-2

1E-1

1E+0 1E+1 1E+2 5E+2

Fig. 5: Relative variation of gate trigger current

and holding current versus junction temperature.

Fig. 6: Non repetitive surge peak on-state

current versus number of cycles.

Igt (Tj)

Ih (Tj)

(A)

TSM

Igt (Tj = 25 ºC)

Ih (Tj = 25 ºC)

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

Tj initial = 25 ºC

Igt

Number of cycles

Tj (ºC)

-40 -20

20 40 60 80 100 120 140

100

1000

Jun - 02

FS02...N

SURFACE MOUNT SCR

Fig. 7: Non repetitive surge peak on-state

current for a sinusoidal pulse with width:

tp £ 10 ms, and corresponding value of I²t.

Fig. 8: On-state characteristics (maximum

values).

(A). I²t (A²s)

(A)

TSM

100

Tj initial = 25 ºC

Tj initial

25 ºC

TSM

Tj max

I²

Tj max

Vto = 1.05 V

Rt = 0.150 W

(V)

tp(ms)

0.1

0.5

1.5

2.5

3.5 4 4.5

PACKAGE MECHANICAL DATA

SOT223 (Plastic)

DIMENSIONS

16º max. (4x)

REF.

Milimeters

Typ.

6.50

10º max.

Min.

6.30

6.70

3.30

Max.

6.70

7.30

3.70

7.00

3.50

4.60

2.30

3.00

0.70

1.60

0.60

2.95

0.65

1.50

0.50

3.15

0.85

1.70

0.70

0.05

0.35

0.02

0.30

0.25

Weight: 0.11 g

FOOT PRINT

3.3

1.5

6.4

(3x) 1

2.3

1.5

4.6

Jun - 02

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