关闭背景特效

FS100KMJ03 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | SOT-186 ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 100A I（ D） | SOT- 186\n

FS100KMJ03


元器件型号：	FS100KMJ03
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 100A I(D) \| SOT-186 晶体管\| MOSFET \| N沟道\| 30V V（ BR ） DSS \| 100A I（ D） \| SOT- 186\n 晶体晶体管
PDF文件：	总4页 (文件大小：210K)
下载文档：	下载PDF数据表文档文件
型号参数：FS100KMJ03参数

FS100KMJ-03

HIGH-SPEED SWITCHING USE

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32 MITSUBISHI

FS100KMJ-03

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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30 POWEREX

FS100KMJ-03F

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | SOT-186

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18 ETC

FS100KMJ-03F

High-Speed Switching Use Nch Power MOS FET

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15 RENESAS

FS100KMJ-03F-A8

High-Speed Switching Use Nch Power MOS FET

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10 RENESAS

FS100R06KE3

EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode

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53 EUPEC

FS100R06KE3BOSA1

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, ECONOPACK-35

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1 INFINEON

FS100R06KF

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)

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17 ETC

FS100R06KF2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)

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15 ETC

FS100R06KF3

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)

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13 ETC

FS100R07N2E4

EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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67 INFINEON

FS100R07N2E4B11BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25

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0 INFINEON

FS100R07N2E4BOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FS100R07N3E4_B11

EconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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14 INFINEON

FS100R07PE4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

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