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FS1210DH [ETC]

Standard Gate SCRs ; 标准门可控硅\n
FS1210DH
型号： FS1210DH
厂家： ETC    ETC
描述：

Standard Gate SCRs
标准门可控硅\n

可控硅 栅
文件： 总4页 (文件大小：133K)
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FS12...H  
STANDARD SCR  
TO220-AB  
On-State Current  
Gate Trigger Current  
12 Amp  
> 0.5 mA to < 25 mA  
Off-State Voltage  
200 V ÷ 600 V  
These series of Silicon Controlled  
Rectifier use a high performance  
PNPN technology.  
K
These parts are intended for general  
purpose high current applications where  
moderate gate insensitivity is required.  
A
G
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
180º Conduction Angle, Tc = 110 ºC  
Half Cycle, Q = 180 º, TC = 110 ºC  
Half Cycle, 60 Hz  
12  
8
A
A
IT(RMS)  
Average On-state Current  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
IT(AV)  
ITSM  
ITSM  
I2t  
154  
140  
98  
A
Half Cycle, 50 Hz  
A
A2s  
tp = 10ms, Half Cycle  
VGRM  
IGM  
PGM  
PG(AV)  
Tj  
Peak Reverse Gate Voltage  
Peak Gate Current  
I
GR = 10 µA  
8
V
20 µs max.  
20 µs max.  
20ms max.  
4
A
Peak Gate Dissipation  
Gate Dissipation  
10  
W
W
ºC  
ºC  
ºC  
1
Operating Temperature  
Storage Temperature  
-40  
-40  
+125  
+150  
260  
Tstg  
Tsld  
Soldering Temperature  
10s max.  
SYMBOL  
PARAMETER  
CONDITIONS  
VOLTAGE  
Unit  
V
B
D
M
RGK = 1 KW  
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Dec - 02  
FS12...H  
STANDARD SCR  
Electrical Characteristics  
Unit  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
09  
2
08  
0.5  
5
10  
MIN  
mA  
2
IGT  
Gate Trigger Current  
VD = 12 VDC , RL = 33W. Tj = 25 ºC  
MAX  
15  
2
25  
mA  
µA  
V
IDRM / IRRM  
VD = VDRM , RGK = 220W Tj = 125 ºC MAX  
VR = VRRM  
at IT = 24 Amp, tp = 380 µs, Tj = 25 ºC MAX  
Off-State Leakage Current  
,
Tj = 25 ºC  
5
MAX  
1.6  
1.3  
0.2  
VTM  
VGT  
VGD  
On-state Voltage  
V
VD = 12 VDC , RL = 33W, Tj = 25 ºC  
VD = VDRM , RL = 3.3KW, RGK = 220W,  
Tj = 125 ºC  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
MAX  
MIN  
V
IH  
Holding Current  
Latching Current  
IT = 500 mA, Gate open  
IG = 1.2 IGT  
MAX  
15  
30  
40  
mA  
IL  
MAX  
MIN  
30  
50  
60  
200  
60  
250  
mA  
V/µs  
dv / dt  
Critical Rate of Voltage Rise VD = 0.67 x VDRM  
IG = 2 x IGT  
,
Gate open  
50  
1.3  
60  
A/µs  
ºC/W  
ºC/W  
Critical Rate of Current Rise  
Tr £ 100 ns, F = 60 Hz,  
di / dt  
MIN  
Tj = 125 ºC  
Thermal Resistance  
Junction-Case for DC  
Rth(j-c)  
Rth(j-a)  
Thermal Resistance  
Junction-Amb (S = 0.5 cm )  
2
V
0.85  
30  
Tj = 125 ºC  
Tj = 125 ºC  
Threshold Voltage  
Dynamic resistance  
MAX  
MAX  
Vt0  
Rd  
mW  
PART NUMBER INFORMATION  
F
S
12  
09  
B
H
00 TU  
FAGOR  
SCR  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
SENSITIVITY  
CURRENT  
Dec - 02  
FS12...H  
STANDARD SCR  
Fig. 1: Maximum average power dissipation  
versus average on-state current.  
Fig. 2: Average and D.C. on-state current  
versus case temperature.  
I
(A)  
T(av)  
P (W)  
16  
14  
13  
12  
11  
10  
9
14  
12  
10  
8
8
7
6
5
6
4
3
4
2
2
1
0
I
(A)  
T(av)  
Tc (ºC)  
0
0
1 2 3 4 5 6 7 8 9 10  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
junction to case versus pulse duration.  
Fig. 4: Relative variation of gate trigger  
current and holding current versus junction  
temperature.  
K = [Zth(j-c) / Rth (j-c)]  
1.0  
I
, I (Tj) / I , I (Tj = 25 ºC)  
GT GT  
H
H
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IGT  
0.5  
0.2  
IH  
tp (s)  
Tj (ºC)  
0.1  
1E-3  
1E-2  
1E-1  
1E+0  
-40 -20  
0
20 40 60 80 100 120 140  
Fig. 7: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp < 10 ms, and corresponding value of I2t.  
Fig. 5: Non repetitive surge peak on-state  
current versus number of cycles.  
I
(A)  
I
(A). I2t (A2s)  
TSM  
TSM  
160  
140  
120  
100  
80  
Tj initial = 25 ºC  
Tj initial = 25 ºC  
F = 50 Hz  
1000  
100  
10  
I
TSM  
I2  
t
60  
40  
20  
tp(ms)  
Number of cycles  
0
1
10  
100  
1000  
1
10  
Dec - 02  
FS12...H  
STANDARD SCR  
Fig. 8: On-state characteristics (maximum  
values).  
I
(A)  
TM  
100.0  
10.0  
Tj =Tj max.  
Tj = 25 ºC  
1.0  
0.1  
Tj max  
Vto = 0.85V  
Rt = 46 mW  
V
(V)  
TM  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
TO-220AB  
PACKAGE MECHANICAL DATA  
DIMENSIONS  
Milimeters  
REF.  
c
B
b2  
Min.  
Nominal  
Max.  
A
a1  
a2  
B
b1  
b2  
C
c1  
c2  
e
F
I
I4  
L
I2  
I3  
M
15.20  
15.90  
L
3.75  
F
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
15.80  
2.65  
1.14  
1.14  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.85  
16.80  
2.95  
1.70  
1.70  
øI  
A
14  
c2  
a1  
13  
12  
a2  
16.40  
2.60  
b1  
M
c1  
e
Dec - 02  

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