FS5KM-10A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220FN ; 晶体管| MOSFET | N沟道| 500V V（ BR ） DSS | 5A I（ D） | TO- 220FN
| 型号： | FS5KM-10A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220FN
|
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
FS5KM-10A
OUTLINE DRAWING
Dimensions in mm
10 0.3
2.8 0.2
φ 3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
0.75 0.15
2.54 0.25
➀ ➁ ➂
➁
➀
➁
➂
GATE
DRAIN
SOURCE
➀
ꢀ 10V DRIVE
ꢀ VDSS ............................................................................... 500V
ꢀ rDS (ON) (MAX) ................................................................ 1.5Ω
ꢀ ID ........................................................................................... 5A
➂
TO-220FN
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
500
30
V
5
A
IDM
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
15
5
A
IDA
L = 200µH
A
PD
30
W
°C
°C
V
Tch
–55 ~ +150
–55 ~ +150
2000
Tstg
Viso
—
AC for 1minute, Terminal to case
Typical value
Weight
2.0
g
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
500
30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IGS = 100µA, VDS = 0V
—
—
VGS = 25V, VDS = 0V
IGSS
Gate-source leakage current
—
10
µA
mA
V
IDSS
Drain-source leakage current VDS = 500V, VGS = 0V
—
—
1.0
3.5
1.5
3.0
—
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Gate-source threshold voltage
Drain-source on-state resistance
2.5
—
3.0
1.2
2.4
4.5
700
70
Ω
V
Drain-source on-state voltage ID = 2A, VGS = 10V
—
ID = 2A, VDS = 10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
2.7
—
S
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
—
—
Crss
—
15
—
td (on)
tr
—
15
—
—
20
—
VDD = 200V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
—
90
—
—
30
—
VSD
Source-drain voltage
Thermal resistance
IS = 2A, VGS = 0V
Channel to case
—
1.5
—
2.0
4.17
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
3
2
50
40
30
20
10
0
101
7
5
tw =
10µs
3
2
100µs
100
7
5
1ms
10
ms
3
2
T
C
= 25°C
100
ms
Single Pulse
10–1
7
5
DC
3
2
0
50
100
150
200
2
3
5
7
101
2
3
5
7
102
2
3
5 7
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
8
5
4
3
2
1
0
V
GS = 20V,10V,8V,6V
VGS = 20V,10V,6V
5V
TC = 25°C
Pulse Test
6
PD = 30W
5V
T
C
= 25°C
Pulse Test
4
PD
= 30W
4V
2
4V
10
0
0
4
8
12
16
20
0
2
4
6
8
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN-SOURCE VOLTAGE
VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
20
16
12
8
4.0
3.2
2.4
1.6
0.8
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
VGS = 10V
ID
= 8A
V
GS = 20V
5A
3A
4
0
0
4
8
12
16
20
10–1
2
3
5 7100
2 3 2 3
5 7101 5 7102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
102
7
5
3
2
101
7
5
TC = 25°C,75°C,125°C
6
3
2
4
100
7
5
2
T
V
C
= 25°C
DS = 10V
Pulse Test
16 20
3
2
VDS = 10V
Pulse Test
0
10–1
0
4
8
12
10–1
2
3
5
7
100
2
3
5 7
101
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
3
5
Tch = 25°C
10
VGS = 10V
3
2
7
5
V
DD = 200V
Ciss
R
GEN = RGS = 50Ω
3
2
102
7
t
t
t
d(off)
2
10
7
5
5
f
3
2
3
2
tr
Coss
Crss
d(on)
1
10
7
5
Tch = 25°C
GS = 0V
f = 1MHz
101
7
5
V
3
2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3
2
3
5
7
100
2
3
5 7
101
10–1
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS5KM-10A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
10
8
VGS = 0V
Pulse Test
VDS = 100V 200V 400V
6
TC = 25°C
75°C
4
125°C
4
2
TCh = 25°C
ID = 5A
0
0
0
8
16
24
32
40
0
1.6
2.4
3.2
4.0
0.8
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
VGS = 10V
ID = 2A
Pulse Test
VDS = 10V
ID = 1mA
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
VGS = 0V
ID = 1mA
D = 1.0
= 0.5
5
3
2
= 0.2
= 0.1
100
7
5
3
2
PDM
= 0.05
10–1
= 0.02
tw
Single Pulse
7
5
= 0.01
T
tw
D=
3
2
T
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH
tw (s)
Sep. 2001
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