FSYA9250D3 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 17A I(D) | SMT ; 晶体管| MOSFET | P沟道| 200V V( BR ) DSS | 17A I( D) | SMT\n
FSYA9250D3
型号: FSYA9250D3
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 17A I(D) | SMT
晶体管| MOSFET | P沟道| 200V V( BR ) DSS | 17A I( D) | SMT\n

晶体 晶体管 开关 脉冲
文件: 总8页 (文件大小:108K)
下载:  下载PDF数据表文档文件

FSYA9250R1

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 17A I(D) | SMT

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14 ETC

FSYA9250R3

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 17A I(D) | SMT

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16 ETC

FSYA9250R4

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 17A I(D) | SMT

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8 ETC

FSYC055D

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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25 INTERSIL

FSYC055D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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12 INTERSIL

FSYC055D3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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12 INTERSIL

FSYC055R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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14 INTERSIL

FSYC055R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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8 INTERSIL

FSYC055R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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10 INTERSIL

FSYC055R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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9 INTERSIL

FSYC160D

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

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15 INTERSIL

FSYC160D1

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

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6 INTERSIL

FSYC160D3

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

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7 INTERSIL

FSYC160D3

Power Field-Effect Transistor, 70A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

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0 FAIRCHILD

FSYC160R

Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs

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13 INTERSIL