FSYC160R [INTERSIL]
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs; 抗辐射，抗SEGR ，N沟道功率MOSFET
| 型号： | FSYC160R |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs |
| 文件： | 总8页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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FSYC160R1
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FSYC160R1
Power Field-Effect Transistor, 70A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FSYC160R3
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FSYC160R4
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FSYC163R3
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